Hordhac ahSilicon Carbide
Silikon carbide (SIC) waxay leedahay cufnaanta 3.2g/cm3. Kaarbide silikoon oo dabiici ah aad buu naadir u yahay waxaana inta badan lagu farsameeyaa hab macmal ah. Marka loo eego kala soocida kala duwan ee qaabdhismeedka crystal, carbide silicon waxa loo qaybin karaa laba qaybood: α SiC iyo β SiC. Jiilka seddexaad ee semiconductor oo ay matalaan silicon carbide (SIC) waxay leedahay soo noqnoqoshada sare, waxtarka sare, awood sare, caabbinta cadaadiska sare, iska caabinta heerkulka sare iyo iska caabinta shucaaca xooggan. Waxay ku habboon tahay baahiyaha istaraatiijiyadeed ee ugu waaweyn ee ilaalinta tamarta iyo dhimista qiiqa, wax soo saarka caqliga leh iyo amniga macluumaadka. Waa in la taageero hal-abuurka madax-bannaanida iyo horumarinta iyo isbeddelka isgaadhsiinta mobilada ee jiilka cusub, baabuurta tamarta cusub, tareenada xadiidka xawaaraha sare leh, Internet tamarta iyo warshadaha kale Qalabka asaasiga ah ee la cusboonaysiiyay iyo qaybaha elektiroonigga ah ayaa noqday diiradda tignoolajiyada semiconductor-ka caalamiga ah iyo tartanka warshadaha . Sannadka 2020-ka, hannaanka dhaqaalaha iyo ganacsiga adduunku waxa uu ku jiraa xilli dib-u-habayn lagu samaynayo, deegaanka gudaha iyo dibadda ee dhaqaalaha Shiinaha ayaa ah mid aad u adag oo daran, laakiin jiilka saddexaad ee semiconductor-ka adduunka ayaa ka soo horjeeda isbeddelka. Waxay u baahan tahay in la aqoonsado in warshadaha carbide silicon ay galeen marxalad horumarineed oo cusub.
Silikoon carbidecodsi
Codsiga silikon carbide ee warshadaha semiconductor silsiladda warshadaha silikoon carbide semiconductor inta badan waxaa ka mid ah silicon carbide silikoon karbohaydrayt oo nadiif ah, substrate hal crystal, epitaxial, qalabka korontada, baakadaha moduleka iyo codsiga terminal, iwm
1. Substrate crystal hal waa sheyga taageerada, walxaha korantada iyo kobaca epitaxial substrate of semiconductor. Waqtigan xaadirka ah, hababka koritaanka ee SiC hal crystal waxaa ka mid ah wareejinta gaaska jirka (PVT), wajiga dareeraha (LPE), kaydinta uumiga kiimikada heerkulka sare (htcvd) iyo wixii la mid ah. 2. xaashida epitaxial silicon carbide epitaxial sheet waxa loola jeedaa kobaca hal filim crystal ah (lakabka epitaxial) oo leh shuruudo gaar ah iyo isla jihaynta substrate-ka. Codsiga wax ku oolka ah, aaladaha faraqa ballaaran ee semiconductor waxay ku dhawaad dhammaan ku yihiin lakabka epitaxial, iyo chips-ka silikoon carbide laftooda waxaa loo isticmaalaa oo keliya sida substrates, oo ay ku jiraan lakabyada Gan epitaxial.
3. daahir sareSiCbudada waa walxo ceeriin ah oo loogu talagalay koritaanka silikoon carbide hal crystal ee habka PVT. Nadiifinteeda alaabtu waxay si toos ah u saamaysaa tayada korriinka iyo sifooyinka korantada ee SiC hal crystal.
4. Qalabka korontada wuxuu ka samaysan yahay silikoon carbide, kaas oo leh sifooyinka caabbinta heerkulka sare, soo noqnoqda sare iyo waxtarka sare. Sida ku cad qaabka shaqada ee qalabka,SiCAaladaha korontadu inta badan waxaa ka mid ah daaydhyada korantada iyo tuubooyinka korontada.
5. Codsiga jiilka saddexaad ee semiconductor, faa'iidooyinka codsiga dhamaadka waa inay buuxin karaan semiconductor GaN. Sababtoo ah faa'iidooyinka wax ku oolnimada sare ee isbeddelka, sifooyinka kuleylka hooseeya iyo miisaanka khafiifka ah ee qalabka SiC, baahida warshadaha hoose ayaa sii socota inay kordhiso, taas oo leh isbeddelka beddelka qalabka SiO2. Xaaladda hadda jirta ee horumarinta suuqa silikoon carbide ayaa si joogto ah u koraysa. Silicon carbide wuxuu hogaamiyaa dalabka suuqa horumarinta jiilka seddexaad ee semiconductor. Jiilka saddexaad ee wax soo saarka semiconductor ayaa si dhakhso ah loo dhex geliyay, goobaha dalabka ayaa si isdaba joog ah u fidaya, suuquna si xawli ah ayuu u korayaa iyadoo la horumarinayo qalabka elektiroonigga ah ee baabuurta, isgaarsiinta 5g, koronto ku dallaco degdeg ah iyo codsi milatari. .
Waqtiga boostada: Mar-16-2021