SiC oxidation - daahan u adkaysta ayaa lagu diyaariyey dusha garaafka iyadoo loo marayo habka CVD

Daahanka SiC waxaa lagu diyaarin karaa kaydinta uumiga kiimikada (CVD), isbeddelka hore, buufinta balaasmaha, iwm Isticmaalka methyl trichlosilane. (CHzSiCl3, MTS) sida il silikoon, daahan SiC ah oo ay diyaarisay habka CVD waa hab bisil oo loo adeegsado codsiga daahan.
Daahan SiC iyo graphite waxay leeyihiin iswaafajinta kiimikaad wanaagsan, farqiga u dhexeeya isugeynta fidinta kulaylka ee u dhexeeya waa yar yahay, iyadoo la adeegsanayo daahan SiC waxay si wax ku ool ah u wanaajin kartaa iska caabbinta xirashada iyo iska caabinta oksaydhka ee walxaha garaafka. Waxaa ka mid ah, saamiga stoichiometric, heerkulka falcelinta, gaaska milanka, gaaska wasakhaysan iyo xaaladaha kale ayaa saameyn weyn ku leh falcelinta.

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Waqtiga boostada: Seb-14-2022
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