2 Natiijooyin tijaabo ah iyo dood
2.1Lakabka Epitaxialdhumucda iyo isku midnimada
Dhumucdiisuna waxay tahay lakabka Epitaxial, fiirsashada doping-ka iyo lebisnaanta ayaa ah mid ka mid ah tilmaamayaasha ugu muhiimsan ee lagu qiimeeyo tayada wafers epitaxial. Dhumucdiisuna si sax ah loo kontrooli karo, fiirsashada doping-ka iyo isku-duubnida ku dhex jirta waferka ayaa fure u ah xaqiijinta waxqabadka iyo joogteyntaQalabka korontada ee SiC, iyo dhumucda lakabka epitaxial iyo isku-duubnaanta feejignaanta doping sidoo kale waa saldhigyo muhiim ah oo lagu cabbiro awoodda habka qalabka epitaxial.
Jaantuska 3 wuxuu muujinayaa lebbiska dhumucda iyo qalooca qaybinta ee 150 mm iyo 200 mmSiC epitaxial wafers. Waxaa laga arki karaa shaxanka in qalooca qaybinta dhumucda lakabka epitaxial ay u siman tahay barta dhexe ee waferka. Waqtiga habka epitaxial waa 600s, celceliska lakabka epitaxial ee dhumucda 150mm ee waferka epitaxial waa 10.89 um, iyo lebbiska dhumucda waa 1.05%. Xisaabinta, heerka kobaca epitaxial waa 65.3 um/saacaddii, taas oo ah heerka caadiga ah ee habka epitaxial degdeg ah. Marka la eego isla wakhtiga habka epitaxial, dhumucda lakabka epitaxial ee 200 mm wafer epitaxial waa 10.10 um, lebbiska dhumucdiisuna waxay ku jirtaa 1.36%, heerka kobaca guudna waa 60.60 um / h, kaas oo wax yar ka hooseeya 150 mm koritaanka epitaxial heerka. Tani waa sababta oo ah waxaa jira khasaare cad oo jidka ah marka isha silikoon iyo isha kaarboon ay ka soo qulqulayaan korka qolka falcelinta iyada oo loo marayo dusha sare ee wafer ilaa hooska hoose ee qolka falcelinta, iyo 200 mm aagga waferka ayaa ka weyn 150 mm. Gaasku wuxuu dhex maraa dusha sare ee waferka 200 mm masaafo dheer, gaaska isha ee lagu cunay jidka ayaa ka badan. Marka la eego xaalada in maraqa uu wareego, dhumucda guud ee lakabka epitaxial waa mid khafiif ah, markaa heerka korriinka ayaa ah mid gaabis ah. Guud ahaan, lebbiska dhumucda 150 mm iyo 200 mm wafers epitaxial waa mid aad u fiican, iyo awoodda habka qalabku wuxuu buuxin karaa shuruudaha qalabka tayada sare leh.
2.2 Xooga saarista lakabka Epitaxial iyo isku-duubnida
Jaantuska 4 waxa uu muujinayaa lebbiska xooga saarista iyo qaybinta qalooca ee 150 mm iyo 200 mmSiC epitaxial wafers. Sida laga arki karo shaxanka, qalooca qaybinta fiirsashada ee waferka epitaxial wuxuu leeyahay summeeyaha muuqda marka loo eego bartamaha waferka. Isku-duubnaanta fiirsashada ee 150 mm iyo 200 mm lakabyada epitaxial waa 2.80% iyo 2.66% siday u kala horreeyaan, taas oo lagu xakamayn karo 3% gudahood, taas oo ah heer aad u fiican qalabka caalamiga ah ee la midka ah. Qallooca fiirsashada ee lakabka epitaxial waxaa loo qaybiyaa qaab "W" oo ay weheliyaan jihada dhexroorka, taas oo inta badan lagu go'aamiyo goobta qulqulka ee foornada epitaxial derbiga kulul, sababtoo ah jihada hawo-mareenka hawada ee foornada koritaanka epitaxial. dhamaadka hawada soo galitaanka (korka) oo ka soo qulqulaya cidhifka hoose si laminaar ah iyada oo loo marayo dusha sare ee wafer; sababtoo ah "dhicista jidka" ee ilaha kaarboonka (C2H4) ayaa ka sarreeya kan isha silikoon (TCS), marka waferku wareego, C/Si dhabta ah ee dusha waferka ayaa si tartiib tartiib ah hoos ugu dhacaya cidhifka ilaa xarunta ( isha kaarboon ee xaruntu way ka yar tahay), marka loo eego "aragtida booska tartanka" ee C iyo N, xoojinta doping ee xarunta waferka ayaa si tartiib tartiib ah hoos ugu dhacaysa cidhifka, si loo helo isku mid ahaanshaha feejignaanta wanaagsan, cidhifka N2 waxaa lagu daraa magdhow ahaan inta lagu jiro habka epitaxial si loo yareeyo hoos u dhigista xoojinta doping-ka laga bilaabo bartamaha ilaa cidhifka, si qalooca fiirsashada ugu dambeeya uu soo bandhigo qaab "W".
2.3 Cilladaha lakabka Epitaxial
Marka lagu daro dhumucda iyo xoojinta doping, heerka xakamaynta cilladda lakabka epitaxial sidoo kale waa halbeeg udub dhexaad u ah cabbirka tayada wafers epitaxial iyo tilmaame muhiim ah oo ku saabsan awoodda habka qalabka epitaxial. In kasta oo SBD iyo MOSFET ay shuruudo kala duwan u leeyihiin cilladaha, haddana cilladaha qaab-dhismeedka dusha sare ee muuqda sida cilladaha dhibicda, cilladaha saddex-xagalka ah, cilladaha karootada, cilladaha majaajilada, iwm ayaa lagu qeexaa cilladaha dilaaga ah ee aaladaha SBD iyo MOSFET. Suurtagalnimada guuldarada chips-ka ay ku jiraan cilladahan waa mid aad u sareysa, sidaa darteed xakameynta tirada cilladaha dilaaga ah ayaa aad muhiim ugu ah hagaajinta wax-soo-saarka chips iyo dhimista kharashyada. Jaantuska 5 wuxuu muujinayaa qaybinta cilladaha dilaaga ah ee 150 mm iyo 200 mm SiC epitaxial wafers. Marka la eego shuruudaha in aysan jirin dheellitir la'aan muuqata oo ku jirta saamiga C / Si, cilladaha karootada iyo cilladaha comet-ka ayaa asal ahaan la tirtiri karaa, halka cilladaha dhibcaha iyo cilladaha saddexagalka ay la xiriiraan xakamaynta nadaafadda inta lagu jiro hawlgalka qalabka epitaxial, heerka wasakhnimada ee garaafka qaybo ka mid ah qolka falcelinta, iyo tayada substrate-ka. Laga soo bilaabo Shaxda 2, waxaa laga arki karaa in cufnaanta cilladda dilaaga ah ee 150 mm iyo 200 mm epitaxial wafers lagu xakameyn karo gudaha 0.3 qaybood / cm2, taas oo ah heer aad u fiican qalab isku mid ah. Heerka xakamaynta cufnaanta cilladda dilaaga ah ee 150 mm waferka epitaxial ayaa ka fiican kan 200 mm wafer wafer ah. Tani waa sababta oo ah habka diyaarinta substrate ee 150 mm waa ka qaan-weyn yahay kan 200 mm, tayada substrate ayaa ka fiican, iyo heerka xakamaynta nijaasta ee 150 mm qolka falcelinta garaafyada ayaa ka fiican.
2.4 Epitaxial wafer qallafsanaan
Jaantuska 6 wuxuu muujinayaa sawirada AFM ee dusha sare ee 150 mm iyo 200 mm SiC epitaxial wafers. Waxaa laga arki karaa shaxanka in xididka dusha sare uu ka dhigan yahay qallafsanaan labajibbaaran ee Ra ee 150 mm iyo 200 mm wafers epitaxial waa 0.129 nm iyo 0.113 nm siday u kala horreeyaan, iyo dusha sare ee lakabka epitaxial waa siman yahay iyada oo aan muuqan ifafaale isu geyn macro-tallaabo ah. Dhacdadani waxay muujinaysaa in kobaca lakabka epitaxial had iyo jeer uu ilaalinayo habka koritaanka socodka socodka inta lagu jiro habka epitaxial oo dhan, mana jirto isugeyn tallaabo ah. Waxaa la arki karaa iyadoo la adeegsanayo habka kobaca epitaxial ee la hagaajiyay, lakabyada epitaxial siman ayaa laga heli karaa 150 mm iyo 200 mm substrates xagasha hoose.
3 Gabagabo
150 mm iyo 200 mm 4H-SiC wafers isku mid ah oo isku mid ah ayaa si guul leh loogu diyaariyey substrates gudaha iyadoo la adeegsanayo qalabka koritaanka 200 mm SiC ee is-horumariyay, iyo habka epitaxial-ka isku midka ah ee ku habboon 150 mm iyo 200 mm ayaa la sameeyay. Heerka kobaca epitaxial wuxuu ka badnaan karaa 60 μm/h. Iyadoo la buuxinayo shuruudaha xawaaraha sare ee epitaxy, tayada wafer-ka epitaxial waa mid aad u fiican. Labbiska dhumucda 150 mm iyo 200 mm SiC waferrada epitaxial waxaa lagu xakameyn karaa 1.5% gudahood, lebbiska fiirsashada ayaa ka yar 3%, cufnaanta cilladda dilaaga ah waxay ka yar tahay 0.3 qaybood / cm2, iyo xididka qallafsanaanta dusha sare ee epitaxial macnaheedu waa square Ra waa in ka yar 0.15 nm. Tilmaamayaasha habka asaasiga ah ee waferrada epitaxial waxay ku jiraan heerka sare ee warshadaha.
Xigasho: Qalabka Gaarka ah ee Warshadaha Elektarooniga ah
Qore: Xie Tianle, Li Ping, Yang Yu, Gong Xiaoliang, Ba Sai, Chen Guoqin, Wan Shengqiang
(Machadka 48-aad ee Cilmi-baarista Shiinaha ee Shirkadda Teknolojiyadda Teknolojiyadda Shiinaha, Changsha, Hunan 410111)
Waqtiga boostada: Sebtembar-04-2024