Hadda, warshadaha SiC waxay ka beddelayaan 150 mm (6 inji) ilaa 200 mm (8 inji). Si loo daboolo baahida degdega ah ee cabbirka weyn, tayada sare leh ee SiC homoepitaxial wafers ee warshadaha, 150mm iyo 200mm4H-SiC waferrada homoepitaxialayaa si guul leh loogu diyaariyey substrates gudaha iyadoo la adeegsanayo qalabka koritaanka 200mm ee SiC ee si madax banaan u horumaray. Habka homoepitaxial ee ku habboon 150mm iyo 200mm ayaa la sameeyay, kaas oo heerka kobaca epitaxial uu ka badnaan karo 60um/h. Markaad la kulanto xawaaraha sare ee epitaxy, tayada wafer ee epitaxial waa mid aad u fiican. Labbiska dhumucda 150 mm iyo 200 mmSiC epitaxial waferswaxaa lagu xakameyn karaa gudaha 1.5%, isku-duubnida feejignaanta ayaa ka yar 3%, cufnaanta cilladda dilaaga ah waxay ka yar tahay 0.3 qaybood / cm2, iyo xididka qallafsanaanta dusha sare ee epitaxial macnaheedu waa square Ra wuxuu ka yar yahay 0.15nm, iyo dhammaan tilmaamayaasha habka asaasiga ah waa at heerka sare ee warshadaha.
Silicon Carbide (SiC)waa mid ka mid ah wakiilada qalabka semiconductor-jiilka saddexaad. Waxay leedahay sifooyin xoog badan oo burbursan, kulaylka kuleyl aad u fiican, xawaaraha saturation elektarooniga weyn, iyo iska caabin shucaac xoog leh. Waxay si weyn u ballaarisay awoodda farsamaynta tamarta ee qalabka korontada waxayna buuxin kartaa shuruudaha adeegga jiilka soo socda ee qalabka elektarooniga ah ee qalabka leh awood sare, cabbir yar, heerkul sare, shucaac sare iyo xaalado kale oo daran. Waxay yareyn kartaa booska, yareyn kartaa isticmaalka korontada waxayna yareyn kartaa shuruudaha qaboojinta. Waxay u keentay isbeddello kacaan ah baabuurta tamarta cusub, gaadiidka tareenada, xadhkaha smart iyo goobaha kale. Sidaa darteed, semiconductors silikoon carbide ayaa loo aqoonsaday inay tahay sheyga ugu fiican ee hogaamin doona jiilka soo socda ee awooda sare ee aaladaha elektiroonigga ah. Sanadihii la soo dhaafay, mahadnaqa taageerada siyaasadda qaranka ee horumarinta warshadaha semiconductor-jiilka saddexaad, cilmi-baarista iyo horumarinta iyo dhismaha 150 mm nidaamka warshadaha SiC qalab ayaa asal ahaan la dhamaystiray ee Shiinaha, iyo ammaanka silsiladda warshadaha ayaa la dammaanad qaaday. Sidaa darteed, diiradda warshadaha ayaa si tartiib tartiib ah ugu wareegay xakamaynta kharashka iyo hagaajinta waxtarka. Sida ku cad Jadwalka 1, marka la barbar dhigo 150 mm, 200 mm SiC waxay leedahay heer ka faa'iidaysi cidhif sare ah, iyo wax soo saarka chips wafer-ka ah waxaa lagu kordhin karaa ilaa 1.8 jeer. Ka dib markii tignoolajiyada bislaado, qiimaha wax soo saarka ee hal chip waa la dhimi karaa 30%. Horumarka tignoolajiyada ee 200 mm waa hab toos ah "yaraynta kharashyada iyo kordhinta waxtarka", sidoo kale waa furaha warshadaha semiconductor ee dalkayga si ay "isku barbar socdaan" ama xitaa "hoggaanka".
Ka duwan habka qalabka Si,Qalabka korontada ee SiC semiconductordhamaantood waa la warshadeeyay oo lagu diyaariyey lakabyo epitaxial ah oo ah dhagaxa rukunka. Waferrada Epitaxial waa agab asaasi ah oo loogu talagalay aaladaha awooda SiC. Tayada lakabka epitaxial ayaa si toos ah u go'aamiya wax-soo-saarka aaladda, qiimaheeduna wuxuu xisaabiyaa 20% qiimaha wax-soo-saarka chip-ka. Sidaa darteed, kobaca epitaxial waa isku xirka dhexe ee muhiimka ah ee aaladaha awooda SiC. Xadka sare ee habka habka epitaxial waxaa lagu go'aamiyaa qalabka epitaxial. Waqtigan xaadirka ah, heerka deegaan ee 150mm SiC qalabka epitaxial ee Shiinaha waa mid aad u sarreeya, laakiin qaabka guud ee 200mm ayaa ka dambeeya heerka caalamiga ah isku mar. Sidaa darteed, si loo xalliyo baahiyaha degdegga ah iyo dhibaatooyinka cidhiidhiga ah ee cabbirka weyn, tayada sare leh ee wax soo saarka epitaxial ee horumarinta warshadaha jiilka saddexaad ee gudaha, warqadani waxay soo bandhigaysaa 200 mm SiC qalabka epitaxial si guul leh ee dalkayga. waxayna baranayaan habka epitaxial. Iyada oo la wanaajinayo cabbirrada habka sida heerkulka habka, heerka socodka gaaska side, saamiga C / Si, iwm., lebbiska fiirsashada <3%, dhumucdiisuna aan la mid ahayn <1.5%, qallafsanaan Ra <0.2 nm iyo cufnaanta cillad dilaa <0.3. / cm2 ee 150 mm iyo 200 mm SiC epitaxial wafers oo leh 200 mm silikoon carbide foornada epitaxial si madax-bannaan ayaa la helay. Heerka habka qalabku wuxuu dabooli karaa baahida diyaarinta qalabka korontada ee SiC oo tayo sare leh.
1 Tijaabi
1.1 Mabda'aSiC epitaxialhabka
Habka kobaca homoepitaxial ee 4H-SiC inta badan waxa ku jira 2 tillaabo oo muhiim ah, kuwaas oo ah, heerkul sare oo goobta ku etching 4H-SiC substrate iyo habka dhigista uumiga kiimikada isku midka ah. Ujeedada ugu weyn ee substrate in-site etching waa in meesha laga saaro waxyeelada dusha sare ee substrate ka dib polishing wafer, dareere polishing haraaga ah, Qurub iyo lakabka oksaydh, iyo qaab-dhismeedka tallaabo atomiga caadiga ah waxaa laga samayn karaa on dusha substrate by etching. Etching goobta waxaa inta badan lagu fuliyaa jawiga hydrogen. Marka loo eego shuruudaha habka dhabta ah, qadar yar oo gaas caawin ah ayaa sidoo kale lagu dari karaa, sida hydrogen chloride, propane, ethylene ama silane. Heerkulka goobta etching hydrogen wuxuu guud ahaan ka sarreeyaa 1 600 ℃, cadaadiska qolka falcelinta waxaa guud ahaan lagu xakameynayaa ka hooseeya 2 × 104 Pa inta lagu jiro habka xoqidda.
Ka dib markii dusha sare ee substrate lagu hawlgeliyo gudaha etching, waxay gashaa habka heerkulka sare ee uumiga kiimikada, taas oo ah, isha korriinka (sida ethylene / propane, TCS / silane), isha doping (n-nooca isha doping ee nitrogen). , P-nooca daawada doping source TMAl), iyo gaasta kaaliyaha ah sida hydrogen chloride waxaa lagu qaadaa qolka falcelinta iyada oo loo marayo qulqulka weyn ee gaaska side (sida caadiga ah hydrogen). Ka dib markii gaasku ka falceliyo qolka falcelinta heerkulka sare, qayb ka mid ah horudhacu wuxuu u falceliyaa kiimiko ahaan wuxuuna ku dhejiyaa dusha sare ee wafer, iyo lakab hal-crystal ah oo isku mid ah 4H-SiC epitaxial oo leh feejignaan gaar ah, dhumuc gaar ah, iyo tayada sare ayaa la sameeyay dusha sare ee substrate iyadoo la isticmaalayo hal-crystal 4H-SiC substrate sida template. Sannado badan oo sahaminta farsamada ah ka dib, tignoolajiyada 4H-SiC homoepitaxial ayaa asal ahaan qaan gaadhay waxaana si balaadhan loogu isticmaalaa wax soo saarka warshadaha. Tiknoolajiyada ugu ballaadhan ee loo isticmaalo 4H-SiC homoepitaxial ee adduunka waxay leedahay laba astaamood oo caadi ah:
(1) Isticmaalka dhidib-ka-baxsan (marka loo eego <0001> diyaaradda crystal, xagga <11-20> jihada crystal) substrate gooyay oblique sida template, daahir-sare hal-crystal 4H-SiC epitaxial lakabka oo aan wasakh lahayn waa lagu kaydiyay substrate-ka qaab korriin socod-socod ah. Horraantii 4H-SiC kobaca homoepitaxial waxay isticmaashay substrate crystal togan, taas oo ah, <0001> Si diyaaradda koritaanka. Cufnaanta tillaabooyinka atomiga ee dusha sare ee substrate crystal togan waa hooseeyaa, terracyaduna waa ballaadhan yihiin. Kobaca nukliyeerka laba-geesoodka ah waa sahlan tahay in la sameeyo inta lagu jiro habka epitaxy si loo sameeyo 3C crystal SiC (3C-SiC). Goynta dhidibka ka baxsan, cufnaanta sare, tillaabooyinka atomiga ballaca barxadda cidhiidhi ah ayaa lagu soo bandhigi karaa dusha sare ee 4H-SiC <0001> substrate, iyo horudhaca adsorbed wuxuu si wax ku ool ah u gaari karaa booska tallaabada atomigga oo leh tamar dusha sare ah iyada oo loo marayo faafinta dusha sare. . Tallaabada, booska hore ee atom / kooxda molecular waa mid gaar ah, markaa habka korriinka socodka socodka, lakabka epitaxial wuxuu si fiican u dhaxli karaa isku xigxiga lakabka atomiga ah ee Si-C ee lakabka si uu u sameeyo hal crystal oo isku mid ah crystal. wajiga sida substrate ah.
(2) Kobaca epitaxial-ka xawliga sare leh waxaa lagu gaaraa iyadoo la soo bandhigayo il silikoon ka kooban koloriin. Nidaamyada kaydinta uumiga kiimikada ee caadiga ah ee SiC, silane iyo propane (ama ethylene) ayaa ah ilaha ugu muhiimsan ee koritaanka. Inta lagu jiro habka kordhinta heerka koritaanka iyadoo la kordhinayo heerka qulqulka ilaha koritaanka, maaddaama dheellitirka cadaadiska qayb ka mid ah qaybta silikoon uu sii socdo inuu kordho, way fududahay in la sameeyo kooxo silikoon ah oo leh nukleation wajiga gaaska, taas oo si weyn u yaraynaysa heerka isticmaalka il silikoon. Sameynta kooxo silikoon ah ayaa si weyn u xaddidaya hagaajinta heerka koritaanka epitaxial. Isla mar ahaantaana, rucubyada silikoonku waxay carqaladayn karaan korriinka socodka socodka waxayna sababi karaan cilad. Si looga fogaado nukleation wejiga gaaska isku midka ah oo loo kordhiyo heerka kobaca epitaxial, soo bandhigida ilo silikon ku salaysan koloriin ayaa hadda ah habka caadiga ah ee lagu kordhinayo heerka kobaca epitaxial ee 4H-SiC.
1.2 200 mm (8-inch) SiC qalabka epitaxial iyo xaaladaha habka
Tijaabooyinka lagu sifeeyay warqadan ayaa dhamaantood lagu sameeyay 150/200 mm (6/8-inch) oo ku haboon darbiga kulul ee monolithic SiC epitaxial qalab si madax banaan u horumariyay Machadka 48th ee Shiinaha Electronics Technology Group Corporation. Foornada epitaxial waxay si toos ah u taageertaa rarista waferka iyo dejinta. Jaantuska 1 waa jaantuska qaabdhismeedka gudaha ee qolka falcelinta ee qalabka epitaxial. Sida ku cad sawirka 1, gidaarka sare ee qolka falcelinta waa gambale quartz ah oo leh dhexda biyaha qaboojiyey, iyo gudaha gambaleelka waa qol falcelin heerkul sare ah, kaas oo ka kooban kuleylka kuleylka la dareemo, nadiif sare. dalool garaafeed gaar ah, saldhig wareeg ah oo gaas-sabbaynaysa, iwm. Gambaleelka quartz oo dhan waxa lagu daboolay gariiradda induction cylindrical, iyo Qolka falcelinta gudaha gambaleelka waxaa kuleyliya koronto-magnet ahaan iyadoo la adeegsanayo sahay koronto oo dhexdhexaad ah oo dhexdhexaad ah. Sida ku cad Jaantuska 1 (b), gaaska qaadaha, gaaska falcelinta, iyo gaaska doping-ga ayaa dhamaantood ku qulqulaya dusha sare ee wafer ee qulqulka laminaarka tooska ah ee ka soo baxa qaybta sare ee qolka falcelinta ilaa dhinaca hoose ee qolka falcelinta waxaana laga soo saaraa dabada dhamaadka gaaska. Si loo hubiyo joogteynta ku dhex jirta maraqa, waferka lagu qaado saldhigga hawada sabaynayso ayaa had iyo jeer wareegta inta lagu jiro habka.
Substrate-ka loo isticmaalo tijaabada waa ganacsi 150 mm, 200 mm (6 inches, 8 inches) <1120> jihada 4° ka baxsan xagal korantada n-nooca 4H-SiC substrate-ka laba-geesoodka ah ee SiC oo ay soo saartay Shanxi Shuoke Crystal. Trichlorosilane (SiHCl3, TCS) iyo ethylene (C2H4) ayaa loo isticmaalaa sida ilaha kobaca ugu weyn ee tijaabada geeddi-socodka, oo ay ku jiraan TCS iyo C2H4 loo isticmaalo il silikon iyo il kaarboon siday u kala horreeyaan, nitrogen-nadiifinta sare (N2) ayaa loo isticmaalaa sida n- nooca doping source, iyo hydrogen (H2) waxaa loo isticmaalaa sida gaaska milil iyo gaasta side. Heerkulka heerkulka habka epitaxial waa 1 600 ~ 1 660 ℃, cadaadiska habka waa 8 × 103 ~ 12 × 103 Pa, iyo heerka socodka gaaska side H2 waa 100 ~ 140 L / min.
1.3 Baaritaanka wafer ee Epitaxial iyo sifada
spectrometer Fourier infrared spectrometer (qalabka soo saaraha Thermalfisher, model iS50) iyo mercury fiirsashada tijaabiyaha (soo saaraha qalabka Semilab, model 530L) ayaa loo isticmaalay si loo garto celceliska iyo qaybinta dhumucda lakabka epitaxial iyo xoojinta doping; dhumucda iyo xoogga doping ee dhibic kasta oo ka mid ah lakabka epitaxial waxaa lagu go'aamiyay iyada oo la qaadayo dhibcaha dhexroorka xariiqda dhexroorka ee isku xiraya xariiqda caadiga ah ee cidhifka tixraaca ee 45 ° ee bartamaha waferka oo leh 5 mm cidhifyada. Wafer 150 mm, 9 dhibcood ayaa la qaaday iyada oo la raacayo hal xariiq oo dhexroor ah (laba dhexroor ayaa midba midka kale ku siman yahay), iyo 200 mm wafer, 21 dhibcood ayaa la qaaday, sida ku cad sawirka 2. Mikroskoob awood atomic ah (saaraha qalabka). Bruker, model Dimension Icon) ayaa loo isticmaalay in lagu xusho 30 μm×30 μm aagagga bartamaha iyo aagga cidhifka (5 mm cidhifka ka saarista) wafer epitaxial si loo tijaabiyo qallafsanaanta dusha sare ee lakabka epitaxial; Cilladaha lakabka epitaxial ayaa lagu qiyaasey iyadoo la adeegsanayo tijaabiyaha cilladda dusha sare (qalabka soo saaraha Shiinaha Electronics Sawirka 3D waxaa lagu gartaa dareeme radar (model Mars 4410 pro) oo ka yimid Kefenghua.
Waqtiga boostada: Sebtembar-04-2024