Hadhuudh taagan oo oksaydhaysan iyo tignoolajiyada koritaanka epitaxial-Ⅱ

2. Kobaca filimka khafiifka ah ee Epitaxial

Substrate-ku wuxuu bixiyaa lakabka taageerada jirka ama lakabka korantada ee qalabka korontada ee Ga2O3. Lakabka xiga ee muhiimka ah waa lakabka kanaalka ama lakabka epitaxial ee loo isticmaalo iska caabinta korantada iyo gaadiidka qaada. Si loo kordhiyo korantada burburka oo loo yareeyo iska caabbinta korantada, dhumucda la kontarooli karo iyo xooga saarista, iyo sidoo kale tayada agabka ugu fiican, ayaa ah shuruudaha qaar. Lakabyada Epitaxial ee tayada sare leh ee Ga2O3 ayaa sida caadiga ah lagu kaydiyaa iyadoo la isticmaalayo molecular beam epitaxy (MBE), kaydinta uumiga kiimikada birta ah (MOCVD), dhigista uumiga halide (HVPE), dhigista laser garaaca (PLD), iyo farsamooyin kaydinta CVD ku salaysan.

Shaxda 2 Qaar ka mid ah tignoolajiyada epitaxial ee wakiil ka ah

2.1 MBE habka

Tiknoolajiyada MBE waxay caan ku tahay awoodda ay u leedahay inay u koraan tayada sare, filimada β-Ga2O3 aan cilad lahayn oo leh nooca n-doping la kontarooli karo taas oo ay ugu wacan tahay bay'addeeda faakuum ee aadka u sarreeya iyo nadiifnimada alaabta sare. Natiijo ahaan, waxay noqotay mid ka mid ah tignoolajiyada dhigaalka khafiifka ah ee β-Ga2O3 aadka loo bartay uguna macquulsan. Intaa waxaa dheer, habka MBE ayaa sidoo kale si guul leh u diyaariyey qaab-dhismeed heer sare ah oo tayo sare leh oo hooseeya β- (AlXGa1-X) 2O3 / Ga2O3 lakabka filimka khafiifka ah. MBE waxay la socon kartaa qaab-dhismeedka dusha sare iyo qaab-dhismeedka wakhtiga dhabta ah iyadoo la raacayo saxnaanta lakabka atomiga iyadoo la adeegsanayo milicsiga tamarta sare ee elektarooniga ah (RHEED). Si kastaba ha noqotee, filimada β-Ga2O3 ee koray iyadoo la adeegsanayo tignoolajiyada MBE ayaa wali la kulma caqabado badan, sida heerka kobaca hooseeya iyo cabbirka filimka yar. Daraasadu waxay ogaatay in heerka kobaca uu u kala horreeyo (010)>(001)>(-201)>(100). Marka loo eego xaaladaha hodanka ah ee Ga-ga yar ee 650 ilaa 750°C, β-Ga2O3 (010) waxay soo bandhigaysaa koboc wanaagsan oo leh dusha siman iyo heerka kobaca sare. Isticmaalka habkan, β-Ga2O3 epitaxy si guul leh ayaa lagu gaadhay qallafsanaanta RMS ee 0.1 nm. β-Ga2O3 Deegaanka qani ku ah Ga, filimada MBE ee ku koray heerkul kala duwan ayaa lagu muujiyay shaxanka. Novel Crystal Technology Inc. ayaa si guul leh u soo saartay 10 × 15mm2 β-Ga2O3MBE wafers. Waxay bixiyaan tayo sare (010) ku jihaysan β-Ga2O3 substrates hal crystal ah oo dhumucdiisu tahay 500 μm iyo XRD FWHM oo ka hooseeya 150 arc seconds. Substrate-ku waa Sn doped ama Fe doped. Substrate-ka Sn-doped conductive wuxuu leeyahay uruurinta doping 1E18 ilaa 9E18cm−3, halka substrate-ka-doped substrate-ku-salaysan uu leeyahay iska caabin ka sarreeya 10E10 Ω cm.

2.2 Habka MOCVD

MOCVD waxay isticmaashaa iskudhisyada birta ah ee organic sida walxo horudhac ah si ay u koraan aflaanta khafiifka ah, si loo gaaro wax soo saar ganacsi oo baaxad leh. Marka la korayo Ga2O3 iyadoo la isticmaalayo habka MOCVD, trimethylgallium (TMGa), triethylgallium (TEGa) iyo Ga (dipentyl glycol formate) ayaa inta badan loo isticmaalaa sida isha Ga, halka H2O, O2 ama N2O loo isticmaalo sida isha oxygen. Kobaca habkan loo isticmaalo guud ahaan wuxuu u baahan yahay heerkul sare (>800°C). Tiknoolajiyadani waxay awood u leedahay in ay gaarto feejignaanta sideyaasha hooseeya iyo dhaqdhaqaaqa elektaroonigga heerkulka sare iyo hooseeya, sidaas darteed waxay muhiimad weyn u leedahay xaqiijinta waxqabadka sare ee β-Ga2O3. Marka la barbardhigo habka kobaca MBE, MOCVD waxay leedahay faa'iidada lagu gaaro heerarka kobaca aadka u sarreeya ee filimada β-Ga2O3 sababtoo ah sifooyinka koritaanka heerkulka sare iyo falcelinta kiimikada.

Jaantuska 7 β-Ga2O3 (010) sawirka AFM

Jaantuska 8 β-Ga2O3 Xiriirka ka dhexeeya μand xaashida caabbinta lagu cabbiro Hoolka iyo heerkulka

2.3 Habka HVPE

HVPE waa tignoolajiyada epitaxial baaluq waxaana si weyn loogu isticmaalay kobaca epitaxial ee semiconductors-ka isku-dhafka ah ee III-V. HVPE waxaa lagu yaqaanaa kharashkeeda wax soo saarka hooseeya, heerka koritaanka degdegga ah, iyo dhumucda filimka sare. Waa in la ogaadaa in HVPEβ-Ga2O3 ay inta badan muujiso qaab-dhismeedka dusha sare iyo cufnaanta sare ee cilladaha dusha sare iyo godadka. Sidaa darteed, hababka nadiifinta kiimikada iyo farsamada ayaa loo baahan yahay ka hor inta aan la soo saarin qalabka. Tignoolajiyada HVPE ee β-Ga2O3 epitaxy caadi ahaan waxay isticmaashaa gaseous GaCl iyo O2 horudhacyaal si kor loogu qaado falcelinta heerkulka sare ee matrixka (001) β-Ga2O3. Jaantuska 9 wuxuu muujinayaa xaalada dusha sare iyo heerka kobaca ee filimka epitaxial sida heerkulka heerkulka. Sannadihii dhawaa, shirkadda Novel Crystal Technology Inc. ee Japan ayaa guulo ganacsi oo la taaban karo ka gaadhay HVPE homoepitaxial β-Ga2O3, oo leh dhumucyada lakabka epitaxial ee 5 ilaa 10 μm iyo cabbirrada wafer ee 2 iyo 4 inches. Intaa waxaa dheer, 20 μm dhumucdiisuna HVPE β-Ga2O3 homoepitaxial wafers ay soo saartay Shiinaha Electronics Technology Group Corporation ayaa sidoo kale galay heerka ganacsi.

Jaantuska 9 Habka HVPE β-Ga2O3

2.4 Habka PLD

Tiknoolajiyada PLD waxaa inta badan loo adeegsadaa in lagu xareeyo filimada oksaydhka adag iyo qaab-dhismeedyada heterostructures. Inta lagu jiro habka korriinka PLD, tamarta photon waxay ku lammaan tahay walxaha la beegsanayo iyada oo loo marayo habka qiiqa elektaroonigga ah. Si ka duwan MBE, qaybaha isha PLD waxaa sameeyay shucaaca laysarka oo leh tamar aad u sareysa (> 100 eV) ka dibna lagu shubo substrate kulul. Si kastaba ha ahaatee, inta lagu jiro habka ablation-ka, qaar ka mid ah qaybaha tamarta sare ayaa si toos ah u saameyn doona dusha maaddada, abuurista cilladaha dhibcaha sidaas darteedna waxay yareeyaan tayada filimka. Si la mid ah habka MBE, RHEED waxaa loo isticmaali karaa si loo kormeero qaab-dhismeedka dusha sare iyo qaab-dhismeedka maaddada wakhtiga dhabta ah inta lagu jiro habka kaydinta PLD β-Ga2O3, taas oo u oggolaanaysa cilmi-baarayaasha inay si sax ah u helaan macluumaadka koritaanka. Habka PLD waxaa la filayaa inay koraan filimaanta β-Ga2O3 si heer sare ah u dhaqma, taasoo ka dhigaysa xal xiriir ohmic la hagaajiyay oo ku jira aaladaha awoodda Ga2O3.

Jaantuska 10 sawirka AFM ee Si doped Ga2O3

2.5 Habka MIST-CVD

MIST-CVD waa tignoolajiyada korriinka filimada khafiifka ah oo fudud oo kharash-ool ah. Habkan CVD waxa uu ku lug leeyahay falcelinta ku buufinta atomized horudhaca ah ee substrate si loo gaaro meel dhigista filim khafiif ah. Si kastaba ha ahaatee, ilaa hadda, Ga2O3 koray iyadoo la isticmaalayo ceeryaamo CVD ayaa weli ka maqan sifooyin koronto oo wanaagsan, taas oo ka tagaysa meelo badan oo loogu talagalay horumarinta iyo hagaajinta mustaqbalka.