Casriga ah C, N, B iyo alaabta ceeriin ee kale ee aan oksaydh-ku-soo-celinta sare-sare, cadaadiska atmospheric sintered silicon carbide waa ballaaran, dhaqaale, waxaa la odhan karaa waa emery ama ciid refractory. Silicon carbide saafi ah waa crystal hufan oo aan midab lahayn. Haddaba waa maxay qaab-dhismeedka maaddada iyo sifooyinka carbide silicon?
Silicon carbide silikoon ah oo la shiiday oo cadaadiska jawiga hoostiisa ku jiro
Qaab dhismeedka walxaha cadaadiska atmospheric sinteed carbide silicon:
Cadaadiska atmospheric sintered carbide silicon ee loo isticmaalo warshadaha waa huruud fudud, cagaar, buluug iyo madow iyadoo loo eegayo nooca iyo waxa ay ka kooban tahay wasakhdu, daahirnimaduna way ka duwan tahay oo daah-furnaantu waa kala duwan tahay. Qaab dhismeedka crystal carbide ee silicon wuxuu u qaybsan yahay lix-erey ama dheeman qaabaysan plutonium iyo cubic plutonium-sic. Plutonium-sic waxay samaysaa qallafsanaan kala duwan iyadoo ay ugu wacan tahay nidaamka isku-duubnida kala duwan ee kaarboonka iyo atamka silikoonka ee qaab dhismeedka crystal, waxaana la helay in ka badan 70 nooc oo qallafsan. beta-SIC waxay u beddeshaa alfa-SIC ee ka sarreeya 2100. Habka warshadaha ee carbide silicon waxaa lagu safeeyey ciid quartz tayo sare leh iyo kookaha batroolka ee foornada iska caabinta. Baloogyada carbide silikoon ee la safeeyey waa la jajabiyey, nadiifinta aashitada-saldhigga, kala soocidda magnetka, baarista ama xulashada biyaha si loo soo saaro noocyo kala duwan oo alaabooyin cabbir ah.
Astaamaha maaddooyinka cadaadiska atmospheric sinteed carbide silicon:
Silicon carbide waxay leedahay xasillooni kiimikaad oo wanaagsan, conductivity kaamerada, isku xidhka ballaarinta kulaylka, xidho iska caabin ah, marka lagu daro isticmaalka abrasive, waxaa jira adeegsiyo badan: Tusaale ahaan, budada carbide silikon waxaa dahaarka leh ee gidaarka gudaha ee marawaxadaha impeller ama block block hab gaar ah, kaas oo hagaajin kara caabbinta xirashada iyo kordhinta nolosha 1 ilaa 2 jeer. Ka samaysan kulayl u adkaysta, cabbir yar, miisaan khafiif ah, xoogga sare ee qalabka dib-u-celinta heerka sare, waxtarka tamarta ayaa aad u wanaagsan. Silicon carbide-ka hooseeya (oo ay ku jiraan qiyaastii 85% SiC) waa deoxidizer heer sare ah oo loogu talagalay kordhinta xawaaraha birta samaynta iyo si fudud loo xakameeyo isku dhafka kiimikada si loo hagaajiyo tayada birta. Intaa waxaa dheer, cadaadiska atmospheric sintered silicon carbide sidoo kale si ballaaran loo isticmaalo soo saaridda ee qaybaha korontada ee ulaha silikon silikon.
Silikon carbide waa mid aad u adag. Adkeysiga Morse waa 9.5, oo ka xigta kaliya dheeman adag adduunka (10), waa semiconductor leh kororka kuleylka wanaagsan, wuxuu iska caabin karaa oksaydhka heerkulka sare. Silikon carbide wuxuu leeyahay ugu yaraan 70 nooc oo crystalline ah. Plutonium-silicon carbide waa isomer caadi ah oo ku sameysma heerkul ka sarreeya 2000 oo leh qaab dhismeed crystalline ah (oo la mid ah wurtzite). Silicon carbide silikoon ah oo la shiiday oo cadaadiska jawiga hoostiisa ku jiro
Codsiga carbide silicon ee warshadaha semiconductor
Silikoon carbide semiconductor silsiladda inta badan waxaa ka mid ah silicon carbide budo saafi ah-sadiif ah, hal crystal substrate, xaashi epitaxial, qaybaha awoodda, baakadaha moduleka iyo codsiyada terminal.
1. Substrate crystal Single Substrate crystal waa shay taageeraya semiconductor, walxaha korantada iyo substrate koritaanka epitaxial. Waqtigan xaadirka ah, hababka koritaanka ee SiC hal crystal waxaa ka mid ah habka wareejinta uumiga jirka (habka PVT), habka dareeraha (habka LPE), iyo habka kaydinta uumiga kiimikada heerkulka sare (HTCVD habka). Silicon carbide silikoon ah oo la shiiday oo cadaadiska jawiga hoostiisa ku jiro
2. Xaashiyaha Epitaxial Silicon carbide epitaxial sheet, xaashi carbide silicon, hal filim crystal (lakabka epitaxial) oo leh jihada la mid ah sida crystal substrate kaas oo leh shuruudo gaar ah oo ku saabsan substrate silikon carbide. Codsiyada wax ku oolka ah, aaladaha faraqa ballaaran ee semiconductor-ka ayaa ku dhawaad dhammaan lagu soo saaray lakabka epitaxial, iyo chip silikoon laftiisa waxaa loo isticmaalaa oo kaliya sida substrate, oo ay ku jiraan substrate-ka lakabka epitaxial GaN.
3. Silikoon carbide budada silikoon nadiif ah oo nadiif ah budada silikoon carbide ee nadiifka ah waa alaabta ceeriin ee koritaanka silicon carbide hal crystal by habka PVT, iyo daahirsanaanta alaabta ayaa si toos ah u saameeya tayada koritaanka iyo sifooyinka korantada ee silicon carbide hal crystal.
4. Qalabka korantadu waa awood ballaadhan oo ka samaysan walxaha silikoon carbide, kaas oo leh sifooyinka heerkulka sare, soo noqnoqda sare iyo waxtarka sare. Marka loo eego qaabka ay u shaqeyso aaladda, aaladda korontada ee SiC waxaa inta badan ka mid ah diode koronto iyo tuubada beddelka korontada.
5. Terminal Codsiyada jiilka saddexaad ee semiconductor, semiconductors silicon carbide waxay faa'iido u leeyihiin inay kaabayaan gallium nitride semiconductors. Sababtoo ah waxtarka isbeddelka sarreeya, sifooyinka kuleylka hooseeya, miisaanka fudud iyo faa'iidooyinka kale ee aaladaha SiC, baahida warshadaha hoose ayaa sii socota inay kordhiso, waxaana jira isbeddel lagu beddelayo aaladaha SiO2.
Waqtiga boostada: Juun-16-2023