Saamaynta substrate-ka SiC iyo agabka epitaxial ee astaamaha aaladda MOSFET

Cilad saddex xagal ah

Cilladaha saddex-geesoodka ah ayaa ah cilladaha qaab-dhismeedka ee ugu badan ee dilaaga ah ee lakabyada SiC epitaxial. Tiro badan oo warbixinno suugaaneed ah ayaa muujiyay in samaynta cilladaha saddex-geesoodka ah ay la xiriirto qaabka crystal 3C. Si kastaba ha ahaatee, sababtoo ah hababka koritaanka kala duwan, qaab-dhismeedka cilladaha saddex-geesoodka ah ee dusha sare ee lakabka epitaxial waa mid aad u kala duwan. Waxa loo qaybin karaa qiyaas ahaan noocyada soo socda:

(1) Waxaa jira cillado saddex xagal ah oo qaybo waaweyn ay ku yaalliin xagga sare

Noocan ah cillad saddex xagal ah ayaa leh qayb weyn oo wareeg ah oo sare ah, taas oo laga yaabo inay sababto walxaha dhacaya inta lagu jiro habka koritaanka. Aag yar oo saddex xagal ah oo leh dusha sare oo qallafsan ayaa laga arki karaa hoos xagan. Tani waxay sabab u tahay xaqiiqda ah in inta lagu jiro habka epitaxial, laba lakab oo kala duwan oo 3C-SiC ah ayaa si isdaba-joog ah u sameeyay aagga saddex-geesoodka ah, kaas oo lakabka koowaad uu nukleed ka yahay interface-ka oo uu ku korayo socodka socodka 4H-SiC. Marka dhumucda lakabka epitaxial uu kordho, lakabka labaad ee 3C polytype nucleates oo koraa godad saddex xagal yar yar, laakiin tallaabada koritaanka 4H si buuxda uma daboosho aagga 3C polytype, samaynta V-qaabeeya jeexdin aagga 3C-SiC weli si cad. muuqda

(2) Xagga sare waxaa ku yaal qaybo yaryar iyo cillado saddex xagal ah oo leh dusha sare

Qaybaha cirifka ciladan ee saddex xagal ah aad bay u yar yihiin, sida ku cad sawirka 4.2. Inta badan aagga saddex-geesoodka ah waxaa daboolay socodka socodka 4H-SiC, taas oo ah, dhammaan lakabka 3C-SiC ayaa si buuxda ugu xiran lakabka 4H-SiC. Kaliya tillaabooyinka kobaca ee 4H-SiC ayaa lagu arki karaa dusha cilada saddex-geesoodka ah, laakiin tillaabooyinkani aad ayey uga weyn yihiin tillaabooyinka kobaca crystal 4H ee caadiga ah.

(3) Cilado saddex xagal ah oo dusha siman leh

Noocan ah cillad saddex xagal ah ayaa leh qaab-dhismeedka dusha sare ee siman, sida ku cad sawirka 4.3. Cilladaha saddex-geesoodka ah, lakabka 3C-SiC waxaa daboolaya socodka socodka 4H-SiC, iyo qaabka crystal 4H ee dusha sare u koraa si fiican oo siman.

Cilladaha godka Epitaxial

Godadka Epitaxial (Pits) waa mid ka mid ah cilladaha morphology ee ugu caansan, iyo qaab-dhismeedkooda caadiga ah ee dusha sare iyo qaab-dhismeedkooda ayaa lagu muujiyay sawirka 4.4. Meesha ay ku yaalaan godadka daxalka (TD) ee godadka daxalka ee lagu arkay ka dib markii KOH etching ee gadaasha qalabka ay leedahay waraaqo cad oo leh meesha ay ku yaalaan godad epitaxial ka hor diyaarinta qalabka, taas oo muujinaysa in samaynta cilladaha godka epitaxial ay la xiriirto kala-baxyada dunta.

cilladaha karooto

Cilladaha karootada waa cillad dusha sare ee 4H-SiC ee lakabyada epitaxial, iyo qaab-dhismeedkooda caadiga ah waxaa lagu muujiyey Jaantuska 4.5. Cilada karootada ayaa lagu soo waramayaa inay samaysay isgoyska Franconian iyo cilladaha is dulsaar ee prismatic ee ku yaal diyaaradda asalka ah ee ku xiran kala-baxyo u eg. Waxa kale oo la sheegay in samaynta cilladaha karootada ay la xiriirto TSD substrate-ka. Tsuchida H. iyo al. la ogaaday in cufnaanta cilladaha karootada ee lakabka epitaxial ay la mid tahay cufnaanta TSD ee substrate-ka. Iyo marka la barbardhigo sawirada morphology ee dusha ka hor iyo ka dib kobaca epitaxial, dhammaan cilladaha karootada ee la arkay waxaa laga heli karaa inay u dhigmaan TSD ee substrate-ka. Wu H. iyo al. isticmaalay sifada tijaabada kala firdhisa Raman si loo ogaado in cilladaha dabacasuhu aanay ku jirin qaabka crystal 3C, laakiin kaliya 4H-SiC polytype.

Saamaynta cilladaha saddex-geesoodka ah ee astaamaha aaladda MOSFET

Jaantuska 4.7 waa shaxanka qaybinta tirokoobyada shan sifo oo qalab ka kooban cillado saddex xagal ah. Xariiqda dhibcaha buluuga ah waa xariiqda kala qaybisa hoos u dhaca sifada aaladda, iyo xariiqda dhibicda cas waa xariiqda qaybinta cilladda aaladda. Qalab la'aanta, cilladaha saddex-geesoodka ah waxay leeyihiin saameyn weyn, iyo heerka guul-darradu wuxuu ka weyn yahay 93%. Tan waxaa inta badan loo aaneynayaa saameynta cilladaha saddex-geesoodka ah ay ku leeyihiin sifooyinka soo daadanaya ee aaladaha. Ilaa 93% aaladaha ay ku jiraan cilladaha saddexagalka ah ayaa si weyn u kordhiyey qulqulka gadaale. Intaa waxaa dheer, cilladaha saddex-geesoodka ah waxay sidoo kale saameyn ba'an ku leeyihiin sifooyinka ka-baxa albaabka, oo leh heerka hoos u dhaca 60%. Sida ku cad Jadwalka 4.2, ee hoos u dhaca korantada bilowga iyo hoos u dhaca dabeecadda diode jirka, saameynta cilladaha saddex-geesoodka ah waa mid yar, iyo saamiga hoos u dhaca waa 26% iyo 33% siday u kala horreeyaan. Marka la eego sababta kororka iska caabbinta, saameynta cilladaha saddex-geesoodka ah waa daciif, saamiga hoos u dhacana waa 33%.

Saamaynta cilladaha godka epitaxial ee astaamaha aaladda MOSFET

Jaantuska 4.8 waa histogram qaybinta tirokoobyada shan sifo oo qalab ay ku jiraan cilladaha godka epitaxial. Xariiqda dhibcaha buluuga ah waa xariiqda kala qaybisa hoos u dhaca sifada aaladda, iyo xariiqda dhibicda cas waa xariiqda qaybinta cilladda aaladda. Waxaa taas laga arki karaa in tirada aaladaha ay ku jiraan cilladaha godka epitaxial ee muunadda SiC MOSFET ay la mid tahay tirada aaladaha ay ku jiraan cilladaha saddex-geesoodka ah. Saamaynta cilladaha godka epitaxial ee astaamaha aaladaha way ka duwan yihiin kuwa cilladaha saddex-geesoodka ah. Marka la eego cilladda aaladda, heerka fashilka aaladaha ay ku jiraan cilladaha godka epitaxial waa 47% oo keliya. Marka la barbar dhigo cilladaha saddex-geesoodka ah, saameynta cilladaha godka epitaxial ee sifooyinka dib-u-kicinta iyo sifooyinka albaabbada ee qalabka ayaa si weyn u daciifay, oo leh saamiga hoos u dhaca ee 53% iyo 38% siday u kala horreeyaan, sida ku cad shaxda 4.3. Dhanka kale, saameynta cilladaha godka epitaxial ee sifooyinka korantada ee bilowga, sifooyinka korantada diode-ka jirka iyo iska caabbinta ayaa ka weyn kuwa cilladaha saddex-geesoodka ah, iyadoo saamiga hoos u dhaca uu gaaro 38%.

Guud ahaan, laba cilladood oo maskaxeed, kuwaas oo kala ah saddex xagal iyo godad epitaxial, ayaa saameyn weyn ku leh fashilka iyo hoos u dhaca sifada ee aaladaha SiC MOSFET. Jiritaanka cilladaha saddex-geesoodka ah ayaa ah tan ugu dhimashada badan, iyadoo heerka guuldarradu uu gaarayo ilaa 93%, inta badan waxaa lagu muujiyey koror weyn oo ku yimid dib-u-kicinta aaladda. Aaladaha ay ku jiraan cilladaha godka epitaxial waxay lahaayeen heer guuldarro hoose oo ah 47%. Si kastaba ha ahaatee, cilladaha godka epitaxial ayaa saameyn weyn ku leh korantada marinka aaladda, astaamaha haynta diode-ka jirka iyo iska caabbinta marka loo eego cilladaha seddex geesoodka ah.