Alaabtii ugu dambeysay ee cusbooneed sid wanaagsan iyo xidhid iska caabin Graphite Semiconductor

Sharaxaad Gaaban:

Codsiga: Qaybaha Semiconductor
Iska caabin (μΩ.m): 8-10 Ohm
Porosity (%): 12% ugu badnaan
Meesha Asal ahaan: Zhejiang, Shiinaha
Cabirka La habeeyay
Cabbirka faa'iidada: <= 325 mesh
Shahaado: ISO9001:2015
Cabbirka iyo Qaabka: La habeeyay


Faahfaahinta Alaabta

Tags Product

Alaabtii ugu dambeysay ee cusbooneed sid wanaagsan iyo xidhid iska caabin Graphite Semiconductor
Codsiga: Qaybaha Semiconductor
Iska caabin (μΩ.m): 8-10 Ohm
Porosity (%): 12% ugu badnaan
Meesha Asal ahaan: Zhejiang, Shiinaha
Cabirka La habeeyay
Cabbirka faa'iidada: <= 325 mesh
Shahaado: ISO9001:2015
Cabbirka iyo Qaabka: La habeeyay

Alaabtii ugu dambeysay ee cusbooneed sid wanaagsan iyo xidhid iska caabin Graphite Semiconductor

Alaabtii ugu dambeysay ee cusbooneed sid wanaagsan iyo xidhid iska caabin Graphite Semiconductor

Alaabtii ugu dambeysay ee cusbooneed sid wanaagsan iyo xidhid iska caabin Graphite Semiconductor

Alaabtii ugu dambeysay ee cusbooneed sid wanaagsan iyo xidhid iska caabin Graphite Semiconductor

Alaabtii ugu dambeysay ee cusbooneed sid wanaagsan iyo xidhid iska caabin Graphite Semiconductor

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