Soo saaraha Shiinaha SiC Dahaarka Graphite MOCVD Epitaxy Susceptor

Sharaxaad Gaaban:

daahirnimo <5pm
‣ Isku mid ahaanshaha doping wanaagsan
‣ Cufnaanta sare iyo dhejinta
‣ Iska caabin wanaagsan oo ka hortag ah iyo kaarboon

‣ Habaynta xirfadlayaasha
‣ Waqti yar oo hogaanka ah
‣ Sahayda deggan
‣ Xakamaynta tayada iyo horumarinta joogtada ah

Epitaxy of GaN on Sapphire(RGB/Mini/Mikro LED);
Epitax of GaN on Si Substrate(UVC);
Epitax of GaN on Si Substrate(Aaladaha Elektarooniga ah);
Epitax of Si on Si Substrate(wareeg isku dhafan);
Epitax of SiC on SiC Substrate(Substrate);
Epitax of InP on InP

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Faahfaahinta Alaabta

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Susceptor MOCVD tayo sare leh online ka iibso Shiinaha

Waferku waxa uu u baahan yahay in uu soo maro dhawr tillaabo ka hor inta aanu diyaar u ahayn isticmaalka qalabka elegtarooniga ah. Mid ka mid ah habka muhiimka ah waa silicon epitaxy, kaas oo wafers lagu qaado susceptors graphite. Guryaha iyo tayada dabaylaha ayaa saameyn muhiim ah ku leh tayada lakabka epitaxial ee wafer.

Wajiyada dhigista filimada khafiifka ah sida epitaxy ama MOCVD, VET waxay siisaa qalab garaafyo saafi ah oo loo isticmaalo in lagu taageero substrates ama "wafers". Ubucda habka, qalabkan, susceptors epitaxy ama satalaytka MOCVD, ayaa marka hore la hoos geeyaa jawiga dhigista:

Heerkulka sare
Faakuum sare.
Isticmaalka horudhaca gaaska gardarada ah.
Wax wasakhaysan eber, maqnaanshaha diirka.
Iska caabbinta asiidhyada xooggan inta lagu jiro hawlgallada nadiifinta

VET Energy waa soo saaraha dhabta ah ee garaafyada la habeeyay iyo alaabada silikoon carbide oo leh dahaarka semiconductor iyo warshadaha sawir-qaadista. Kooxdayada farsamo waxay ka yimaadaan hay'adaha cilmi-baarista gudaha ee ugu sarreeya, waxay ku siin karaan xalal qalab xirfadeed oo dheeraad ah adiga.

Waxaan si joogto ah u horumarinaa habab horumarsan si aan u bixinno qalab aad u horumarsan, waxaanan ka shaqeynay tignoolajiyada gaarka ah ee patented, taas oo ka dhigi karta isku xidhka dahaarka iyo substrate-ka mid adag oo u nugul goynta.

Tilmaamaha alaabtayada:

1. Iska caabbinta oksaydhka heerkulka sare ilaa 1700 ℃.
2. Nadiif sare iyo isku mid ahaanshaha kulaylka
3. iska caabin daxalka heer sare ah: acid, alkali, cusbo iyo reagents organic.
4. Adag sare, oogada is haysta, qaybo yaryar.
5. Cimri dheer oo adeeg iyo waarta

CVD SiC薄膜基本物理性能 Tilmaamaha asaasiga ah ee CVD SiCdaahan
性质 / Hanti	典型数值 / Qiimaha caadiga ah
晶体结构 / Dhismaha Crystal	FCC β wejiga多晶，主要为（111) 取向
密度 / Cufnaanta	3.21 g/cm³
硬度 / Adag	2500 维氏硬度（500g oo culeys ah
晶粒大小 / Hadhuudhka Size	2 ~ 10μm
纯度 / Nadiifnimada Kiimikada	99.99995%
热容 / Awoodda kulaylka	640 · kg^-1·K^-1
升华温度 / Heerkulka Sublimation	2700 ℃
抗弯强度 / Xoog Jilicsan	415 MPa RT 4-dhibic
杨氏模量 /Dhallinyarada Modulus	430 Gpa 4pt laab, 1300 ℃
导热系数 / ThermalHab-dhaqanka	300W·m^-1·K^-1
热膨胀系数 / Balaadhinta kulaylka (CTE)	4.5×10^-6K^-1