12 inch SOI Wafer

Sharaxaad Gaaban:

Khibrad u yeelo hal-abuur cusub oo aan waligeed hore la arag casriga casriga ah ee 12 Inch SOI Wafer, yaab tignoolajiyadeed oo ay si sharaf leh kuugu keentay VET Energy. Lagu farsameeyay saxnaanta iyo khibradda, waferkan Silicon-On-Insulator wuxuu dib u qeexayaa heerarka warshadaha, isagoo bixinaya tayo iyo waxqabad aan la mid ahayn.


Faahfaahinta Alaabta

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VET Energy 12-inch SOI wafer waa wax-qabad sare oo semiconductor substrate ah, kaas oo si weyn loogu door biday sifooyinkeeda korantada ee ugu wanaagsan iyo qaab dhismeedka gaarka ah. Tamarta VET waxay isticmaashaa hababka wax soo saarka wafer ee horumarsan ee SOI si loo hubiyo in maraqa uu leeyahay dareere aad u hooseeya hadda, xawli sare iyo iska caabin shucaac ah, taasoo siinaya aasaas adag wareegyadaada isku dhafan ee waxqabadka sare leh.

Khadka wax soo saarka VET Energy kuma koobna waferrada SOI. Waxaan sidoo kale bixinaa agabyo kala duwan oo ah substrate-ka, oo ay ku jiraan Si Wafer, Substrate SiC, SiN Substrate, Epi Wafer, iwm., iyo sidoo kale agabka cusub ee bandgap semiconductor sida Gallium Oxide Ga2O3 iyo AlN Wafer. Alaabooyinkani waxay dabooli karaan baahida codsiga macaamiisha kala duwan ee korontada, RF, dareemayaasha iyo goobaha kale.

Diirada saarida heerka sare, waferradayada SOI waxay sidoo kale isticmaalaan agabyo horumarsan sida gallium oxide Ga2O3, cajalado iyo wafers AlN si loo hubiyo isku halaynta iyo hufnaanta heer kasta oo hawlgal ah. Ku kalsoonow VET Energy si ay u bixiso xalal go'an oo u gogol xaaraya horumarka tignoolajiyada.

Ku sii daaya kartida mashruucaaga waxqabadka sare ee VET Energy 12-inch SOI wafers. Ku xooji awoodahaaga hal-abuurnimo ee wafers ka kooban tayada, saxnaanta iyo hal-abuurka, aas-aaska u ah guusha qaybta firfircoon ee tignoolajiyada semiconductor. U dooro VET Energy xalalka waferka ee qiimaha sare leh ee SOI ee dhaafsiisan filashooyinka.

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QEEXIDDA WAFERING

*n-Pm=n-nooca Pm-Grade,n-Ps=n-nooca Ps-Grade,Sl=Semi-lnsulating

Shayga

8-inch

6-inch

4-inji

nP

n-Pm

n-Ps

SI

SI

TTV(GBIR)

≤6um

≤6um

Qaanso(GF3YFCD) -Qiimaha saxda ah

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Beveling

DHULKA DHAMMAAN

*n-Pm=n-nooca Pm-Grade,n-Ps=n-nooca Ps-Grade,Sl=Semi-lnsulating

Shayga

8-inch

6-inch

4-inji

nP

n-Pm

n-Ps

SI

SI

Dhamaystir dusha sare

Polish indhaha laba-geesoodka ah,Si- Waji CMP

Dusha sareynta

(10um x 10um) Si-FaceRa≤0.2nm
C-Waji Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Chips Edge

Midna Lama ogola (dhererka iyo ballaca≥0.5mm)

Indents

Midna lama ogola

xoqid (Si-Waji)

Qty.≤5, Wadar ah
Dhererka≤0.5× dhexroorka wafer

Qty.≤5, Wadar ah
Dhererka≤0.5× dhexroorka wafer

Qty.≤5, Wadar ah
Dhererka≤0.5× dhexroorka wafer

dildilaaca

Midna lama ogola

Ka saarida gees

3mm

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