Iyo crystal yekukura choto ndiyo yakakosha midziyo yesilicon carbidekukura kwekristaro. Iyo yakafanana neyechinyakare crystalline silicon giredhi crystal yekukura vira. Chimiro chevira hachina kunyanya kuoma. Iyo inonyanya kuumbwa nechoto chemoto, kupisa system, coil transmission mechanism, vacuum acquisition uye kuyerwa system, gasi nzira system, inotonhorera system, control system, etc. Iyo inopisa munda uye mamiriro ekugadzirisa anosarudza zviratidzo zvakakosha zve.silicon carbide crystalkufanana unhu, saizi, conductivity uye zvichingodaro.
Kune rumwe rutivi, tembiricha panguva yekukura kwesilicon carbide crystalyakakwirira kwazvo uye haigone kutariswa. Nokudaro, kuoma kukuru kuri mukugadzirisa pachako. Matambudziko makuru ndeaya anotevera:
(1) Kuoma mukutonga kwemunda wekupisa: Kutarisa kwekuvhara kwepamusoro-tembiricha mhango yakaoma uye haidzoreki. Yakasiyana neyechinyakare silicon-yakavakirwa mhinduro yakananga-dhonza kristaro yekukura midziyo ine yakakwira dhigirii ye otomatiki uye inocherechedzwa uye inodzoreka yekristaro kukura maitiro, silicon carbide makristasi anokura munzvimbo yakavharwa munzvimbo yepamusoro-tembiricha iri pamusoro pe2,000 ℃, uye tembiricha yekukura. inoda kunyatsodzorwa panguva yekugadzira, izvo zvinoita kuti kutonga kwekushisa kuve kwakaoma;
(2) Kuomerwa mukristaro fomu control: micropipes, polymorphic inclusions, dislocation uye zvimwe zvinokanganisa zvinowanzoitika panguva yekukura, uye zvinokanganisa uye zvinoshanduka. Micropipes (MP) ndeye-kuremara kwemhando ine saizi yemamicrons akati wandei kusvika kumakumi emamicron, ayo ari anouraya kukanganisa kwemidziyo. Silicon carbide single crystals inosanganisira anopfuura mazana maviri emhando dzekristaro dzakasiyana, asi mashoma makristasi zvimiro (4H mhando) ndiyo semiconductor zvinhu zvinodiwa pakugadzirwa. Crystal fomu shanduko iri nyore kuitika panguva yekukura, zvichikonzera kukanganisa kwepolymorphic inclusion. Naizvozvo, zvinodikanwa kunyatso kudzora ma paramita akadai sesilicon-kabhoni ratio, kukura tembiricha gradient, crystal yekukura mwero, uye kuyerera kwemhepo. Uye zvakare, kune tembiricha yekushisa mumunda wekupisa wesilicon carbide single crystal kukura, iyo inotungamira kune yekuzvarwa kushushikana kwemukati uye zvinokonzeresa dislocation (basal plane dislocation BPD, screw dislocation TSD, edge dislocation TED) panguva yekukura kwekristaro, nekudaro. inokanganisa kunaka uye kuita kweinotevera epitaxy nemidziyo.
(3) Yakaoma doping control: Kuiswa kwekunze kwekunze kunofanirwa kunyatsodzorwa kuti uwane conductive crystal ine directional doping;
(4) Kunonoka kukura mwero: Kukura kwesilicon carbide kunononoka. Zvechinyakare zvesilicon zvinhu zvinongoda mazuva matatu kuti zvikure kuita danda rekristaro, nepo silicon carbide crystal rods inoda mazuva manomwe. Izvi zvinotungamira kune yakadzikira yakadzika kugadzirwa kwesilicon carbide uye yakanyanya kushomeka kubuda.
Kune rimwe divi, maparamendi esilicon carbide epitaxial kukura ari kudiwa zvakanyanya, kusanganisira kusimba kwemhepo kwemidziyo, kugadzikana kwegasi rekumanikidza mukamuri yekupindura, kunyatso kudzora kwenguva yekusuma gasi, iko kurongeka kwegasi. reshiyo, uye manejimendi akasimba etembiricha yekuisa. Kunyanya, nekuvandudzwa kweiyo mudziyo wemagetsi ekupikisa level, kuomerwa kwekudzora core parameters epitaxial wafer kwakawedzera zvakanyanya. Pamusoro pezvo, nekuwedzera kwehupamhi hweiyo epitaxial layer, maitiro ekudzora kufanana kweiyo resistivity uye kuderedza density yekuremara uku uchiona kuti ukobvu hwave rimwe dambudziko guru. Mune magetsi ekudzora system, zvinodikanwa kubatanidza yakakwirira-chaiyo sensors uye actuators kuti ive nechokwadi chekuti akasiyana ma paramita anogona kurongeka uye akadzikama. Panguva imwecheteyo, iyo optimization yekutonga algorithm kwakakosha zvakare. Inoda kukwanisa kugadzirisa hurongwa hwekutonga munguva chaiyo maererano nechiratidzo chemhinduro kuti ienderane nekuchinja kwakasiyana-siyana musilicon carbide epitaxial growth process.
Matambudziko makuru musilicon carbide substratekugadzira:
Nguva yekutumira: Jun-07-2024