Iwo ehunyanzvi matambudziko mukudzikama-anogadzira emhando yepamusoro silicon carbide wafers ane kuita kwakagadzikana anosanganisira:
1) Sezvo makristasi achida kukura munzvimbo yakakwirira-yakavharwa pamusoro pe2000 ° C, zvinodiwa zvekudzivirira tembiricha zvakanyanyisa;
2) Sezvo silicon carbide iine makristaro anodarika mazana maviri, asi mashoma mashoma e-crystal silicon carbide ndiyo inodiwa semiconductor zvinhu, iyo silicon-to-carbon ratio, kukura tembiricha gradient, uye kukura kwekristaro kunoda kudzorwa panguva chaiyo. nzira yekukura kwekristaro. Parameters yakadai sekumhanya uye kuyerera kwemhepo;
3) Pasi peiyo mhute chikamu chekufambisa nzira, iyo dhayamita yekuwedzera tekinoroji yesilicon carbide crystal kukura kwakaoma zvakanyanya;
4) Kuomarara kwesilicon carbide iri padyo neiyo yedhaimondi, uye kucheka, kukuya, uye nzira dzekupukuta dzakaoma.
SiC epitaxial wafers: kazhinji inogadzirwa nemakemikari vapor deposition (CVD) nzira. Zvinoenderana nemhando dzakasiyana dzedoping, dzakakamurwa kuita n-mhando uye p-mhando epitaxial wafers. Domestic Hantian Tiancheng naDongguan Tianyu vanogona kutopa 4-inch/6-inch SiC epitaxial wafers. Kune SiC epitaxy, zvakaoma kudzora mumunda we-high-voltage, uye mhando yeSiC epitaxy ine simba guru pamidziyo yeSiC. Zvakare, epitaxial michina inodzorwa nemakambani mana anotungamira muindastiri: Axitron, LPE, TEL uye Nuflare.
Silicon carbide epitaxialwafer inoreva silicon carbide wafer umo imwe crystal firimu (epitaxial layer) ine zvimwe zvinodiwa uye yakafanana neiyo substrate crystal inokura pane yekutanga silicon carbide substrate. Epitaxial kukura kunonyanya kushandisa CVD (Chemical Vapor Deposition, ) midziyo kana MBE (Molecular Beam Epitaxy) midziyo. Sezvo michina yesilicon carbide inogadzirwa zvakananga mu epitaxial layer, kunaka kweiyo epitaxial layer inobata zvakananga kuita uye goho remudziyo. Sezvo mhepo inomira kushanda kwechigadzirwa ichiramba ichiwedzera, kukora kweinoenderana epitaxial layer kunowedzera uye kutonga kunowedzera kuoma.Kazhinji, kana magetsi ari pedyo ne600V, iyo inodiwa epitaxial layer thickness inenge 6 microns; kana voltage iri pakati pe1200-1700V, iyo inodiwa epitaxial layer gobvu inosvika 10-15 microns. Kana iyo voltage ikasvika kupfuura 10,000 volts, epitaxial layer gobvu inodarika 100 microns inogona kudiwa. Sezvo ukobvu hweiyo epitaxial layer ichiramba ichiwedzera, zvinova zvakanyanya kuoma kudzora ukobvu uye resistivity kufanana uye kuremara density.
SiC zvishandiso: Kunyika dzese, 600 ~ 1700V SiC SBD uye MOSFET dzakagadzirwa maindasitiri. Izvo zvigadzirwa zvemazuva ese zvinoshanda pamazinga emagetsi pazasi pe1200V uye zvakanyanya kutora TO kurongedza. Panyaya yemitengo, zvigadzirwa zveSiC pamusika wepasirese zvinotengeswa pamitengo inosvika 5-6 yakakwira kupfuura vamwe vavo veSi. Zvisinei, mitengo iri kuderera pamwero wepagore we10%. nekuwedzera kwezvinhu zvekumusoro uye kugadzirwa kwemidziyo mumakore 2-3 anotevera, kuwanikwa kwemusika kuchawedzera, zvichizokonzera kudzikiswa kwemitengo. Zvinotarisirwa kuti kana mutengo wasvika 2-3 nguva yezvigadzirwa zveSi, zvakanakira zvinounzwa nekuderedzwa kwemitengo yehurongwa uye nekuita kwakagadziridzwa kunozofambisa zvishoma nezvishoma SiC kutora nzvimbo yemusika yeSi zvishandiso.
Kurongedza kwechinyakare kwakavakirwa pasilicon-based substrates, nepo chechitatu-chizvarwa semiconductor zvinhu zvinoda dhizaini nyowani. Kushandisa echinyakare silicon-yakavakirwa kurongedza zvimiro kune yakakura-bandgap magetsi maturusi anogona kuunza nyaya nyowani nematambudziko ane chekuita nekuwanda, kutonga kwemafuta, uye kuvimbika. SiC magetsi emagetsi anonyanya kunzwa kune parasitic capacitance uye inductance. Kuenzaniswa neSi zvishandiso, SiC magetsi machipisi ane kukurumidza kushandura kumhanya, izvo zvinogona kutungamira kune overshoot, oscillation, kuwedzera kurasikirwa kwekuchinja, uye kunyangwe kusashanda zvakanaka kwechishandiso. Pamusoro pezvo, SiC magetsi maturusi anoshanda patembiricha yakakwira, ichida mamwe emhando yepamusoro tekinoroji yekudziya.
Akasiyana-siyana akasiyana zvimiro akagadzirwa mumunda we-wide-bandgap semiconductor simba packaging. Traditional Si-based power module packaging haichakodzeri. Kuti ugadzirise matambudziko epamusoro parasitic paramita uye kushomeka kwekupisa kupisa kwechinyakare Si-based power module packaging, SiC power module packaging inotora isina waya yekubatanidza uye kaviri-parutivi kutonhora tekinoroji muchimiro chayo, uye zvakare inotora iyo substrate zvinhu zvine zviri nani kupisa. conductivity, uye kuyedza kubatanidza decoupling capacitors, tembiricha/zvino sensors, uye dhiraivha maseketi muchimiro chemodule, uye yakagadzira akasiyana akasiyana module kurongedza. michina. Zvakare, kune yakakwirira tekinoroji zvipingamupinyi kuSiC mudziyo kugadzira uye mutengo wekugadzira wakakwira.
Silicon carbide zvishandiso zvinogadzirwa nekuisa epitaxial layers pane silicon carbide substrate kuburikidza neCVD. Maitiro acho anosanganisira kuchenesa, oxidation, photolithography, etching, kubviswa kwephotoresist, ion implantation, kemikari vapor deposition yesilicon nitride, polishing, sputtering, uye anozotevera ekugadzirisa matanho ekugadzira chimiro chemudziyo paSiC single crystal substrate. Mhando huru dzeSiC magetsi emagetsi anosanganisira SiC diodes, SiC transistors, uye SiC simba modules. Nekuda kwezvinhu zvakaita sekunonoka kukwira kumusoro kwekugadzira zvinhu kumhanya uye kuderera kwegoho, silicon carbide zvishandiso zvine mutengo wakakwira wekugadzira.
Uye zvakare, kugadzira silicon carbide mudziyo kune mamwe matambudziko ehunyanzvi:
1) Izvo zvinodikanwa kugadzira imwe nzira inoenderana nehunhu hwesilicon carbide zvinhu. Semuyenzaniso: SiC ine yakakwira kunyungudika, izvo zvinoita kuti chinyakare kupararira kwemafuta kusashande. Izvo zvinodikanwa kushandisa ion implantation doping nzira uye kunyatso kudzora paramita senge tembiricha, chiyero chekudziya, nguva, uye gasi kuyerera; SiC inert kune makemikari zvinonyungudutsa. Nzira dzakaita seyakaoma etching dzinofanira kushandiswa, uye masiki zvinhu, gasi musanganiswa, kutonga kwepadivi pemadziro kutsetsereka, etching mwero, roughness yepadivi, nezvimwe zvinofanirwa kuvandudzwa uye kuvandudzwa;
2) Kugadzirwa kwemasimbi emagetsi pasilicon carbide wafers kunoda kupikisa pazasi 10-5Ω2. Izvo zvinhu zve electrode zvinosangana nezvinodiwa, Ni neAl, zvine hurombo hwekudziya kugadzikana pamusoro pe100 ° C, asi Al/Ni ine kugadzikana kwemafuta kuri nani. Iyo yekusangana yakananga kuramba kwe / W/Au composite electrode zvinhu ndeye 10-3Ω2 yakakwirira;
3) SiC ine yakakwirira yekucheka kupfeka, uye kuoma kweSiC ndeyechipiri kune dhaimondi, iyo inoisa mberi zvinodiwa zvekucheka, kukuya, kupukuta uye humwe hunyanzvi.
Uyezve, mugero wesilicon carbide magetsi midziyo yakanyanya kuoma kugadzira. Zvinoenderana neakasiyana madhizaini zvigadziriso, silicon carbide magetsi emagetsi anogona kunyanya kukamurwa kuita planar zvishandiso uye migero michina. Planar silicon carbide magetsi emagetsi ane yakanaka yuniti kuenderana uye yakapusa yekugadzira maitiro, asi akajairwa kuJFET mhedzisiro uye ane yakakwira parasitic capacitance uye pa-nyika kuramba. Kuenzaniswa nemidziyo yakarongwa, trench silicon carbide magetsi maturusi ane yakaderera unit kusawirirana uye ane yakanyanya kuoma kugadzira maitiro. Nekudaro, chimiro chemugero chinokodzera kuwedzera dhizaini yedhisheni uye haine mukana wekugadzira iyo JFET mhedzisiro, iyo inobatsira kugadzirisa dambudziko rekufamba kwechiteshi. Iyo ine yakanakisa zvivakwa senge diki pa-resistance, diki parasitic capacitance, uye yakaderera switching simba rekushandisa. Iyo ine yakakosha mutengo uye mabhenefiti ekuita uye yave inotungamira kutungamira kwekuvandudzwa kwesilicon carbide magetsi emagetsi. Zvinoenderana neRohm yepamutemo webhusaiti, iyo ROHM Gen3 chimiro (Gen1 Trench chimiro) ingori 75% yeGen2 (Plannar2) chip nzvimbo, uye iyo ROHM Gen3 chimiro pa-resistance inoderedzwa ne50% pasi peiyo chip size.
Silicon carbide substrate, epitaxy, front-end, R&D cost uye vamwe vanotora 47%, 23%, 19%, 6% uye 5% yemutengo wekugadzira wesilicon carbide zvishandiso zvakateerana.
Chekupedzisira, isu tichatarisa pakuputsa zvipingamupinyi zvehunyanzvi zvema substrates musilicon carbide indasitiri chain.
Maitiro ekugadzira esilicon carbide substrates akafanana neayo esilicon-based substrates, asi zvakanyanya kuoma.
Iyo yekugadzira maitiro esilicon carbide substrate inowanzo sanganisira mbishi synthesis, kukura kwekristaro, ingot kugadzirisa, ingot kucheka, wafer kugaya, kupukuta, kuchenesa uye zvimwe zvinongedzo.
Iyo kristaro yekukura nhanho ndiyo musimboti weiyo yese maitiro, uye iyi nhanho inosarudza magetsi zvimiro zvesilicon carbide substrate.
Silicon carbide zvinhu zvakaoma kukura muchikamu chemvura pasi pemamiriro akajairwa. Iyo vapor chikamu chekukura nzira yakakurumbira mumusika nhasi ine tembiricha yekukura iri pamusoro pe2300 ° C uye inoda kunyatso kudzora tembiricha yekukura. Iyo yese mashandiro ekuita inenge yakaoma kuona. Chikanganiso chidiki chinozotungamira kune chigadzirwa chakaraswa. Mukuenzanisa, silicon zvinhu zvinongoda 1600 ℃, iyo yakaderera zvakanyanya. Kugadzirira silicon carbide substrates zvakare inotarisana nematambudziko akadai sekunonoka kwekristaro kukura uye yakakwirira crystal fomu zvinodiwa. Silicon carbide wafer kukura kunotora mazuva manomwe kusvika gumi, ukuwo kukweva tsvimbo yesilicon kunongotora mazuva maviri nehafu. Uyezve, silicon carbide chinhu chine kuoma kwechipiri chete kune diamond. Icharasikirwa zvakanyanya panguva yekucheka, kukuya, uye kukwenenzverwa, uye chiyero chekubuda chinongova 60%.
Isu tinoziva kuti maitiro ndeyekuwedzera saizi yesilicon carbide substrates, sezvo saizi iri kuramba ichiwedzera, izvo zvinodikanwa zvekuwedzera tekinoroji zviri kuramba zvichikwira nekukwira. Zvinoda musanganiswa weakasiyana siyana ekudzora zvinhu kuti uwane iterative kukura kwemakristasi.
Nguva yekutumira: May-22-2024