Chizvarwa chekutanga che semiconductor zvinhu chinomiririrwa nesilicon yechinyakare (Si) uye germanium (Ge), inova hwaro hwekubatanidzwa kwedunhu kugadzira. Iwo anoshandiswa zvakanyanya mu low-voltage, low-frequency, uye yakaderera-simba transistors uye detectors. Zvinopfuura 90% zve semiconductor zvigadzirwa Zvakagadzirwa nesilicon-based materials;
Yechipiri chizvarwa semiconductor zvinhu zvinomiririrwa ne gallium arsenide (GaAs), indium phosphide (InP) uye gallium phosphide (GaP). Zvichienzaniswa nesilicon-based devices, vane high-frequency uye high-speed optoelectronic properties uye inoshandiswa zvakanyanya muminda ye optoelectronics uye microelectronics. ;
Chizvarwa chechitatu chezvigadzirwa zve semiconductor zvinomiririrwa nezvinobuda zvinhu zvakaita sesilicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond (C), uye aluminium nitride (AlN).
Silicon carbidechinhu chakakosha chakakosha pakuvandudza kweyechitatu-chizvarwa semiconductor indasitiri. Silicon carbide magetsi maturusi anogona kunyatsosangana nehupamhi hwepamusoro, miniaturization uye huremu zvinodiwa zvemagetsi masisitimu emagetsi neawo akanakisa e-high-voltage kuramba, kupisa kwakanyanya kuramba, kurasikirwa kwakaderera uye zvimwe zvivakwa.
Nekuda kwehunhu hwayo hwepamusoro hwemuviri: yakakwira bhendi gap (inoenderana nekuputsika kwakakwira kwemagetsi uye kusimba kwesimba guru), yakakwira magetsi conductivity, uye yakakwira yekupisa yekupisa, inotarisirwa kuve iyo inonyanya kushandiswa zvinhu zvekutanga kugadzira semiconductor machipisi mune ramangwana. . Kunyanya muminda yemagetsi matsva emagetsi, photovoltaic simba rekugadzira, njanji yekufambisa, smart grid uye mamwe minda, ine zviri pachena zvakanakira.
Iyo SiC yekugadzira maitiro yakakamurwa kuita matanho makuru matatu: SiC imwe chete crystal kukura, epitaxial layer kukura uye kugadzirwa kwemidziyo, iyo inoenderana nemakona mana makuru eindasitiri cheni:substrate, epitaxy, zvishandiso uye modules.
Nzira yekugadzira ma substrates inotanga kushandisa iyo mhute yepasi sublimation nzira yekudzikisa hupfu munzvimbo ine tembiricha yevacuum, uye kukura makristasi esilicon carbide pamusoro pekristaro yembeu kuburikidza nekutonga kwenzvimbo yekushisa. Uchishandisa silicon carbide wafer se substrate, kemikari mhute deposition inoshandiswa kuisa dhizaini imwe chete yekristaro pawafer kuita epitaxial wafer. Pakati pavo, kukura silicon carbide epitaxial layer pane conductive silicon carbide substrate inogona kugadzirwa mumagetsi emagetsi, ayo anonyanya kushandiswa mumagetsi emagetsi, photovoltaics uye mamwe minda; kukura gallium nitride epitaxial layer pane semi-insulatingsilicon carbide substrateinogona kuenderera mberi kugadzirwa kuita redhiyo frequency zvishandiso, inoshandiswa mu5G kutaurirana uye mamwe minda.
Parizvino, silicon carbide substrates ine yepamusoro-soro zvipingamupinyi musilicon carbide indasitiri cheni, uye silicon carbide substrates ndiyo yakanyanya kuoma kugadzira.
Iyo bhodhoro yekugadzira yeSiC haisati yanyatsogadziriswa, uye kunaka kweiyo raw material crystal mbiru haina kugadzikana uye kune dambudziko regoho, rinotungamira kumutengo wakakwira weSiC zvishandiso. Zvinongotora avhareji yemazuva matatu kuti silicon zvinhu zvikure kuita danda rekristaro, asi zvinotora vhiki kune silicon carbide crystal rod. A general silicon crystal rod inogona kukura 200cm kureba, asi silicon carbide crystal rod inogona chete kukura 2cm kureba. Uyezve, SiC pachayo chinhu chakaoma uye chakaoma, uye mawaferi akagadzirwa nayo anowanzo kupendeka kucheka kana uchishandisa echinyakare mechaniki yekucheka wafer dicing, inokanganisa goho rechigadzirwa uye kuvimbika. MaSiC substrates akasiyana zvakanyanya kubva kune echinyakare silicon ingots, uye zvese kubva kumidziyo, maitiro, kugadzirisa kusvika kukucheka kunoda kugadzirwa kubata silicon carbide.
Iyo silicon carbide indasitiri chain inonyanya kukamurwa kuita mana makuru link: substrate, epitaxy, zvishandiso uye maapplication. Substrate zvinhu ndiyo hwaro hweindastiri cheni, epitaxial zvinhu ndiyo kiyi yekugadzira mudziyo, zvishandiso ndizvo musimboti weindastiri cheni, uye mashandisirwo ndiwo anofambisa kusimudzira maindasitiri. Indasitiri yekumusoro inoshandisa zvigadzirwa kugadzira substrate zvinhu kuburikidza nemuviri mhute sublimation nzira uye dzimwe nzira, uyezve inoshandisa kemikari vapor deposition nzira uye dzimwe nzira dzekukura epitaxial zvinhu. Indasitiri yepakati pemvura inoshandisa zvinhu zvepamusoro kugadzira redhiyo frequency zvishandiso, magetsi emagetsi uye zvimwe zvishandiso, izvo zvinozopedzisira zvashandiswa mukudzika kwe5G kutaurirana. , motokari dzemagetsi, njanji yekufambisa, nezvimwewo Pakati pavo, substrate uye epitaxy account ye 60% yemutengo weketani yeindasitiri uye ndiyo inonyanya kukosha yeketani yeindasitiri.
SiC substrate: SiC makristasi anowanzo gadzirwa uchishandisa nzira yeLely. Zvigadzirwa zvepasi rose zviri kushandura kubva ku4 inches kuenda ku6 inches, uye 8-inch conductive substrate zvigadzirwa zvakagadziridzwa. Domestic substrates inonyanya 4 inches. Sezvo iripo 6-inch silicon wafer mitsara yekugadzira inogona kukwidziridzwa uye kushandurwa kuti igadzire SiC zvishandiso, iyo yepamusoro musika mugove we6-inch SiC substrates ichachengetwa kwenguva yakareba.
Iyo silicon carbide substrate process yakaoma uye yakaoma kugadzira. Silicon carbide substrate isanganiswa semiconductor imwe crystal zvinhu inoumbwa nezvinhu zviviri: kabhoni nesilicon. Parizvino, iyo indasitiri inonyanya kushandisa yakakwira-kuchena kabhoni poda uye yakakwirira-kuchena silicon poda semidziyo yakabikwa kugadzira silicon carbide poda. Pasi penzvimbo yakakosha yekushisa, iyo yakakura yemuviri mhute yekufambisa nzira (PVT nzira) inoshandiswa kurima silicon carbide yehukuru hwakasiyana muchoto chekukura kwekristaro. Iyo crystal ingot inozogadziriswa, kuchekwa, pasi, kukwenenzverwa, kucheneswa uye mamwe maitiro akawanda kugadzira silicon carbide substrate.
Nguva yekutumira: May-22-2024