Nhanganyaya yeSilicon Carbide
Silicon carbide (SIC) ine density ye3.2g/cm3. Natural silicon carbide ishoma uye inonyanya kugadzirwa neyakagadzirwa nzira. Zvinoenderana neyakasiyana kupatsanurwa kwekristaro chimiro, silicon carbide inogona kukamurwa kuita mapoka maviri: α SiC uye β SiC. Semiconductor yechizvarwa chechitatu inomiririrwa nesilicon carbide (SIC) ine high frequency, high performance, high simba, high pressure resistance, high temperature resistance and strong radiation resistance. Inokodzera izvo zvakakura zvehurongwa zvinodiwa zvekuchengetedza simba uye kuderedzwa kwekubuda, kungwara kugadzira uye kuchengetedza ruzivo. Iko kutsigira yakazvimiririra innovation uye kusimudzira uye shanduko yechizvarwa chitsva kutaurirana kwenhare, mota nyowani dzesimba, zvitima zvinomhanya-mhanya, simba Internet uye mamwe maindasitiri Izvo zvakakwidziridzwa zvepakati zvinhu uye zvemagetsi zvikamu zvave zvinotarisisa zvepasi rose semiconductor tekinoroji uye kukwikwidza kwemaindasitiri. . Muna 2020, hupfumi hwepasirese uye kutengeserana maitiro ari munguva yekugadziridzwa, uye mukati nekunze nharaunda yehupfumi hweChina yakanyanya kuoma uye yakaoma, asi chizvarwa chechitatu semiconductor indasitiri munyika iri kukura ichipokana nemaitiro. Izvo zvinofanirwa kucherechedzwa kuti iyo silicon carbide indasitiri yapinda padanho idzva rekusimudzira.
Silicon carbideapplication
Silicon carbide application mune semiconductor indasitiri silicon carbide semiconductor indasitiri chain inonyanya kusanganisira silicon carbide yakakwira purity poda, single crystal substrate, epitaxial, mudziyo wemagetsi, module kurongedza uye terminal application, nezvimwe.
1. single crystal substrate ndiyo inotsigira zvinhu, conductive zvinhu uye epitaxial kukura substrate ye semiconductor. Parizvino, nzira dzekukura dzeSiC single crystal dzinosanganisira kufambisa gasi remuviri (PVT), chikamu chemvura (LPE), kupisa kwakanyanya kwemakemikari vapor deposition (htcvd) zvichingodaro. 2. epitaxial silicon carbide epitaxial sheet inoreva kukura kweimwe crystal film (epitaxial layer) ine zvimwe zvinodiwa uye kutaridzika kwakafanana se substrate. Mukushanda kwekushandisa, iyo yakakura bhendi gap semiconductor zvishandiso zvinenge zvese pane epitaxial layer, uye silicon carbide machipisi pachawo anongo shandiswa se substrates, kusanganisira Gan epitaxial layers.
3. kuchena kwepamusoroSiCpoda chinhu chakabikwa chekukura kwesilicon carbide single crystal nePVT nzira. Kuchena kwechigadzirwa chayo kunokanganisa zvakananga kukura kwemhando uye magetsi eSiC single crystal.
4. mudziyo wemagetsi unogadzirwa nesilicon carbide, ine maitiro ekudzivirira kupisa kwepamusoro, kuwanda kwepamusoro uye kushanda kwakanyanya. Zvinoenderana nekushanda kwechigadzirwa,SiCzvishandiso zvemagetsi zvinonyanya zvinosanganisira diode emagetsi uye magetsi switch chubhu.
5. muchizvarwa chechitatu semiconductor application, zvakanakira zvekupedzisira application ndezvekuti vanogona kuzadzisa iyo GaN semiconductor. Nekuda kwemabhenefiti eiyo yakanyanya kupinduka kushanda zvakanaka, yakaderera kudziyisa maitiro uye huremu hweSiC zvishandiso, kudiwa kweindasitiri yepasi kunoramba kuchiwedzera, iyo ine maitiro ekutsiva SiO2 zvishandiso. Mamiriro azvino eiyo silicon carbide musika wekuvandudza ari kuramba achikura. Silicon carbide inotungamira yechitatu chizvarwa semiconductor yekuvandudza musika application. Chizvarwa chechitatu semiconductor zvigadzirwa zvakapinzwa nekukurumidza, minda yekunyorera iri kuramba ichikura, uye musika uri kukura nekukurumidza nekuvandudzwa kwemagetsi emotokari, kutaurirana kwe5g, kukurumidza kuchaja magetsi uye kushandiswa kwemauto. .
Nguva yekutumira: Mar-16-2021