Sezvinoratidzwa mumufananidzo 3, kune nzira nhatu dzakasimba dzinovavarira kupa SiC imwe kristaro ine hupamhi hwepamusoro uye inoshanda: liquid phase epitaxy (LPE), physical vapor transport (PVT), uye high-temperature kemikari vapor deposition (HTCVD). PVT inzira yakanyatsogadziriswa yekugadzira SiC single crystal, iyo inoshandiswa zvakanyanya mukugadzira mawafer makuru.
Nekudaro, ese matatu maitiro ari kukurumidza kubuda uye nekuvandudza. Hazvisati zvave kugoneka kukanganisa kuti ndeipi nzira ichagamuchirwa zvakanyanya mune ramangwana. Kunyanya, yemhando yepamusoro SiC imwe kristaro inogadzirwa nemhinduro kukura pamwero wakakura yakataurwa mumakore achangopfuura, kukura kweSiC yakawanda muchikamu chemvura kunoda tembiricha yakaderera pane iyo ye sublimation kana deposition process, uye inoratidza kugona mukugadzira P. -mhando yeSiC substrates (Tafura 3) [33, 34].
Mufananidzo 3: Schematic yevatatu vanotonga SiC single crystal growth techniques: (a) liquid phase epitaxy; (b) kutakurwa kwemhute chaiyo; (c) yakakwirira-tembiricha kemikari vapor deposition
Tafura 3: Kuenzanisa kweLPE, PVT uye HTCVD yekukura SiC imwe makristasi [33, 34]
Kukura kwemhinduro ndiyo yakajairwa tekinoroji yekugadzirira komputa semiconductors [36]. Kubva kuma1960s, vaongorori vakaedza kugadzira kristaro mumhinduro [37]. Kamwe iyo tekinoroji yakagadziridzwa, iyo supersaturation yenzvimbo yekukura inogona kudzorwa zvakanaka, izvo zvinoita kuti nzira yekugadzirisa ive inovimbisa tekinoroji yekuwana yakakwirira-yemhando imwe crystal ingots.
Kukura kwemhinduro yeSiC imwe kristaro, iyo Si sosi inobva kune yakachena kwazvo Si yakanyunguduka nepo graphite crucible inoshanda zviviri zvinangwa: heater uye C solute sosi. SiC single crystals inogona kukura pasi peyakanaka stoichiometric ratio apo chiyero cheC neSi chiri pedyo ne1, zvichiratidza kuderera kwehurema [28]. Nekudaro, pakumanikidzwa kwemuchadenga, SiC hairatidze nzvimbo yekunyungudika uye inoora yakananga kuburikidza nemhepo yekupisa inodarika kutenderera 2,000 ° C. SiC inonyunguduka, maererano ne theoretical tarisiro, inogona chete kuumbwa pasi pezvakanyanya kuonekwa kubva kuSi-C binary phase diagram (Fig. 4) iyo pa tembiricha gradient uye mhinduro hurongwa. Iyo yakakwira C muSi melt inosiyana kubva pa1at.% kusvika 13at.%. Iyo inotyaira C supersaturation, iyo inokurumidza kuwedzera kukura, nepo yakaderera C simba rekukura iri C supersaturation inodzorwa kudzvanywa kwe109 Pa uye tembiricha pamusoro pe3,200 ° C. Inogona supersaturation inobudisa nzvimbo yakatsetseka [22, 36-38] .kupisa pakati pe1,400 ne2,800 ° C, kunyungudika kweC muSi melt kunosiyana kubva ku1at.% kusvika ku13at. Simba rekufambisa rekukura ndiyo C supersaturation inotongwa netembiricha gradient uye mhinduro system. Iyo yakakwirira yeC supersaturation, iyo inokurumidza kukurumidza kukura, nepo yakaderera C supersaturation inoburitsa nzvimbo yakatsetseka [22, 36-38].
Mufananidzo 4: Si-C bhanari chikamu dhayagiramu [40]
Doping transition simbi zvinhu kana zvisingawanzo-yepasi zvinhu hazvisi chete zvinobudirira kudzikisa tembiricha yekukura asi inoita seyo chete nzira yekuvandudza zvakanyanya kunyungudika kwekabhoni muSi melt. Kuwedzerwa kwesimbi yeboka rekuchinja, seTi [8, 14-16, 19, 40-52], Cr [29, 30, 43, 50, 53-75], Co [63, 76], Fe [77- 80], nezvimwewo kana zvisingawanzo simbi dzepasi, dzakadai seCe [81], Y [82], Sc, zvichingodaro kune Si melt inobvumira iyo kabhoni solubility kudarika 50at.% munzvimbo iri pedyo ne thermodynamic equilibrium. Uyezve, nzira yeLPE yakanakira P-mhando doping yeSiC, iyo inogona kuwanikwa kuburikidza nekubatanidza Al mu
solvent [50, 53, 56, 59, 64, 71-73, 82, 83]. Zvisinei, kubatanidzwa kweAl kunotungamirira kukuwedzera kwekudzivirira kweP-type SiC single crystals [49, 56] .Kunze kweN-mhando yekukura pasi pe nitrogen doping,
Kukura kwemhinduro kunowanzo kuenderera mune inert gasi mamiriro. Kunyange zvazvo helium (He) inodhura kudarika argon, inofarirwa nenyanzvi dzakawanda nekuda kwekuderera kwayo uye yakakwirira yekushisa conductivity (8 times of argon) [85]. Chiyero chekutama uye Cr zvirimo mu4H-SiC zvakafanana pasi peHe neAr atmosphere, zvinoratidzwa kuti kukura pasi peHeresults muhuwandu hwekukura kwepamusoro pane kukura pasi peAr nekuda kwekupisa kukuru kwemuridzi wembeu [68]. Anokanganisa kuumbwa kwevoids mukati mekristaro yakakura uye inongoerekana yaitika nucleation mumhinduro, saka, yakatsetseka pamusoro morphology inogona kuwanikwa [86].
Iri bepa rakaunza budiriro, mashandisirwo, uye zvivakwa zveSiC zvishandiso, uye nzira nhatu huru dzekukura SiC imwe kristaro. Muzvikamu zvinotevera, maitiro ekukura ekugadzirisa mhinduro uye zviyero zvakakosha zvakaongororwa. Pakupedzisira, maonero akatsanangurwa akakurukura matambudziko nemabasa emangwana maererano nekukura kukuru kweSiC single crystals kuburikidza nemhinduro nzira.
Nguva yekutumira: Jul-01-2024