1. Chechitatu-chizvarwa semiconductors
Yekutanga-yechizvarwa semiconductor tekinoroji yakagadzirwa zvichibva pane semiconductor zvinhu zvakaita seSi neGe. Ndiyo hwaro hwezvinhu zvekuvandudzwa kwema transistors uye yakasanganiswa yedunhu tekinoroji. Yekutanga-yechizvarwa semiconductor zvinhu zvakateya hwaro hweindasitiri yemagetsi muzana ramakore re20 uye ndizvo zvekutanga zvekushandisa zvakabatanidzwa zvedunhu tekinoroji.
Yechipiri-chizvarwa semiconductor zvinhu zvinonyanya zvinosanganisira gallium arsenide, indium phosphide, gallium phosphide, indium arsenide, aluminium arsenide uye ternary makomisheni avo. Yechipiri-chizvarwa semiconductor zvinhu ndiyo hwaro hweiyo optoelectronic ruzivo indasitiri. Nechikonzero ichi, maindasitiri ane hukama akadai semwenje, kuratidza, laser, uye photovoltaics akagadzirwa. Iwo anoshandiswa zvakanyanya mune yemazuva ano ruzivo tekinoroji uye optoelectronic kuratidza maindasitiri.
Zvinhu zvinomiririra zveyechitatu-chizvarwa semiconductor zvinhu zvinosanganisira gallium nitride uye silicon carbide. Nekuda kwehupamhi hwebhendi gap, yakakwira maelectron saturation drift velocity, high thermal conductivity, uye high breakdown field simba, zvinhu zvakanakira kugadzirira high-power density, high-frequency, uye low-losssable electronic devices. Pakati pazvo, silicon carbide magetsi emagetsi ane zvakanakira kusimba kwesimba, kushomeka kwesimba, uye saizi diki, uye ane tarisiro yakakura yekushandisa mumotokari nyowani dzesimba, photovoltaics, njanji yekufambisa, data hombe, uye mamwe minda. Gallium nitride RF madivayiri ane mabhenefiti emhando yepamusoro, simba guru, bandwidth yakafara, kuderera kwesimba rekushandisa uye saizi diki, uye ine tarisiro yakakura yekushandisa mu5G kutaurirana, Indaneti yeZvinhu, radar yemauto nemamwe minda. Uye zvakare, gallium nitride-yakavakirwa masimba emagetsi akashandiswa zvakanyanya munzvimbo yakaderera-voltage. Pamusoro pezvo, mumakore achangopfuura, zvinhu zviri kubuda zvegallium oxide zvinotarisirwa kuumba tekinoroji kuwirirana neiyo iripo SiC neGaN tekinoroji, uye kuve neinobvira yekushandisa tarisiro muminda yakaderera-frequency uye yakakwirira-voltage.
Kana ichienzaniswa neyechipiri-chizvarwa semiconductor zvinhu, yechitatu-chizvarwa semiconductor zvinhu zvine yakafara bandgap upamhi (iyo bhendi upamhi hweSi, yakajairika zvinhu zvechizvarwa chekutanga semiconductor zvinhu, ingangoita 1.1eV, iyo bandgap upamhi hweGaAs, yakajairika. zvinhu zvechizvarwa chechipiri semiconductor zvinhu, zvinenge 1.42eV, uye bandgap yakafara GaN, chinhu chakajairika chechizvarwa chechitatu semiconductor zvinhu, chiri pamusoro pe2.3eV), kusimba kwemwaranzi inopokana, kupikisa kwakasimba kuparara kwemunda wemagetsi, uye kupisa kwakanyanya. Yechitatu-yechizvarwa semiconductor zvinhu zvine wider bandgap wide inonyanya kukodzera kugadzirwa kwemwaranzi-resistant, high-frequency, high-power and high-integration-density electronic devices. Mashandisiro avo mumicrowave radio frequency zvishandiso, maLED, lasers, magetsi emagetsi uye mamwe minda akwezva kutariswa kwakawanda, uye varatidza tarisiro yakafara yebudiriro mukufambiswa kwemashoko, smart grids, njanji, mota nyowani, magetsi evatengi, uye ultraviolet neblue. -green light devices [1].
Mufananidzo kunobva: CASA, Zheshang Securities Research Institute
Mufananidzo 1 GaN simba mudziyo nguva chiyero uye fungidziro
II GaN zvinhu chimiro uye maitiro
GaN ndeye yakananga bandgap semiconductor. Iyo bandgap yakafara yewurtzite chimiro pane tembiricha yekamuri inenge 3.26eV. Zvigadzirwa zveGaN zvine matatu makuru ekristaro zvimiro, zvinoti wurtzite chimiro, sphalerite chimiro uye rock munyu chimiro. Pakati pavo, iyo wurtzite dhizaini ndiyo yakanyanya kugadzikana kristaro chimiro. Mufananidzo 2 dhayagiramu yehexagonal wurtzite chimiro cheGaN. Iyo wurtzite chimiro cheGaN zvinhu ndeye hexagonal yakavharwa-yakazara chimiro. Sero rega rega rine maatomu gumi nemaviri, kusanganisira 6 N maatomu uye 6 Ga maatomu. Atomu yega yega Ga (N) inoumba chisungo nemaatomu mana ari padyo N (Ga) uye akaturikidzana muhurongwa hweABABAB… achitevedza [0001] gwara [2].
Mufananidzo 2 Wurtzite chimiro GaN crystal cell diagram
III Inowanzo shandiswa substrates yeGaN epitaxy
Zvinoita sekuti homogeneous epitaxy paGaN substrates ndiyo yakanakisa sarudzo yeGaN epitaxy. Nekudaro, nekuda kwesimba rakakura rechisungo reGaN, kana tembiricha yasvika painonyungudika ye2500 ℃, inoenderana nekuora kwayo kumanikidza inenge 4.5GPa. Kana iyo decomposition pressure yakaderera pane iyi pressure, GaN hainyungudi asi inonyunguduka yakananga. Izvi zvinoita kuti matekinoroji ekugadzirira akakura senge nzira yeCzochralski isakodzere kugadzirira kweGaN imwe chete crystal substrates, zvichiita kuti GaN substrates iome kuburitsa uye inodhura. Nokudaro, iyo substrates inowanzoshandiswa muGaN epitaxial kukura inonyanya Si, SiC, sapphire, etc. [3].
Chati 3 GaN uye paramita yezvinowanzo shandiswa substrate zvinhu
GaN epitaxy pasafire
Safire ine yakagadzikana makemikari zvimiro, yakachipa, uye ine hukuru hwakakura hwehukuru hwekugadzira indasitiri. Naizvozvo, yave imwe yepakutanga uye inonyanya kushandiswa substrate zvinhu mu semiconductor mudziyo engineering. Seimwe yeanowanzo shandiswa ma substrates eGaN epitaxy, matambudziko makuru anoda kugadziriswa esapphire substrates ndeaya:
✔ Nekuda kweiyo hombe yelattice mismatch pakati pesafire (Al2O3) neGaN (inenge 15%), defect density painterface pakati peepitaxial layer uye substrate yakanyanya. Kuti uderedze mhedzisiro yayo yakashata, iyo substrate inofanirwa kuisirwa kune yakaoma pretreatment isati yatanga epitaxy process. Usati wakura GaN epitaxy pasapphire substrates, iyo substrate yepamusoro inofanira kutanga yanyatsocheneswa kubvisa zvinosvibisa, zvakasara zvekupolisha kukuvara, nezvimwewo, uye kugadzira nhanho uye nhanho dzepamusoro zvimiro. Zvadaro, iyo substrate pamusoro inoiswa nitrided kushandura iyo yekunyorova zvinhu zveiyo epitaxial layer. Chekupedzisira, iyo yakatetepa yeAlN buffer layer (inowanzo 10-100nm gobvu) inoda kuiswa pane substrate pamusoro uye yakanyungudutswa pane yakaderera tembiricha kugadzirira yekupedzisira epitaxial kukura. Zvakadaro, density yekusarudzika mumafirimu eGaN epitaxial anorimwa pasapphire substrates ichiri yakakwira kupfuura iyo yemafirimu e-homoepitaxial (anenge 1010cm-2, zvichienzaniswa neiyo zero dislocation density musilicon homoepitaxial mafirimu kana gallium arsenide homoepitaxial films 1010cm-2cm, uye pakati pe1010cm-10cm. 2). Iyo yakanyanya kuremara density inoderedza mutakuri wekufamba, nekudaro kupfupisa vashoma mutakuri hupenyu uye kuderedza kupisa kwekupisa, izvo zvese zvinoderedza mashandiro emudziyo [4];
✔ Thermal yekuwedzera coefficient yesafire yakakura kupfuura iyo yeGaN, saka biaxial compressive kusagadzikana inogadzirwa muiyo epitaxial layer panguva yekutonhodza kubva kune deposition tembiricha kusvika kukamuri tembiricha. Kune akakora epitaxial mafirimu, kushungurudzika uku kunogona kukonzera kuputika kwefirimu kana kunyange substrate;
✔ Kuenzaniswa nemamwe ma substrates, thermal conductivity yesafire substrates yakaderera (inenge 0.25W * cm-1 * K-1 pa 100 ℃), uye kupisa kwekushisa kwekuita kwakashata;
✔ Nekuda kwekushata kwayo, ma substrates esafiri haakodzere kubatanidzwa kwavo uye kushandiswa nemamwe ma semiconductor zvishandiso.
Kunyange zvazvo density density yeGaN epitaxial layers yakakurira pasapphire substrates yakakwira, hairatidzike zvakanyanya kuderedza optoelectronic performance yeGaN-based blue-green LEDs, saka sapphire substrates ichiri kunyanya kushandiswa substrates yeGaN-based LEDs.
Nekuvandudzwa kwemamwe mashandisirwo matsva eGaN zvishandiso senge lasers kana mamwe akakwira-density magetsi emagetsi, hurema hwemasafire substrates hwawedzera kuve muganhu pakushandisa kwavo. Pamusoro pezvo, nekuvandudzwa kweSiC substrate kukura tekinoroji, kudzikisa mutengo uye kukura kweGaN epitaxial tekinoroji paSi substrates, kumwe kutsvagisa pamusoro pekukura kweGaN epitaxial layers pasafire substrates kwakaratidza zvishoma nezvishoma maitiro ekutonhora.
GaN epitaxy paSiC
Kana ichienzaniswa nesafire, SiC substrates (4H- uye 6H-crystals) ine diki diki mismatch neGaN epitaxial layers (3.1%, yakaenzana ne [0001] oriented epitaxial films), yakakwirira thermal conductivity (inenge 3.8W * cm-1 * K) -1), etc. Mukuwedzera, conductivity yeSiC substrates inobvumirawo magetsi emagetsi kuti aitwe kuseri kwe substrate, iyo inobatsira kurerutsa chimiro chemudziyo. Kuvepo kweaya mabhenefiti kwakwezva vaongorori vakawanda kuti vashande paGaN epitaxy pasilicon carbide substrates.
Nekudaro, kushanda zvakananga paSiC substrates kudzivirira kukura GaN epilayers zvakare inotarisana nenhevedzano yezvakaipa, kusanganisira zvinotevera:
✔ Kuomarara kwepasi kweSiC substrates kwakakwira zvakanyanya kupfuura kwesapphire substrates (sapphire roughness 0.1nm RMS, SiC roughness 1nm RMS), maSiC substrates ane kuomarara kwakanyanya uye kusashanda zvakanaka kwekugadzirisa, uye kushata uku uye kusara kwekupukuta kukuvara zvakare ndeimwe yea masosi ekuremara muGaN epilayers.
✔ Iyo screw dislocation density yeSiC substrates yakakwira (dislocation density 103-104cm-2), screw dislocation inogona kupararira kuGaN epilayer uye kuderedza kushanda kwechigadzirwa;
✔ Kurongeka kweatomu pachikamu chepasi chinokonzera kuumbwa kwekukanganisa kwekurongedza (BSFs) muGaN epilayer. Kune epitaxial GaN paSiC substrates, kune akawanda anogoneka hurongwa hweatomu pane substrate, zvichikonzera kusaenderana kwekutanga atomic stacking kurongeka kweiyo epitaxial GaN layer pairi, iyo inowanzoitika kurongedza kukanganisa. Stacking zvikanganiso (SFs) inosuma yakavakirwa-mukati minda yemagetsi pamwe ne-c-axis, zvichitungamira kumatambudziko akadai sekudonha kwe-mu-ndege inotakura kupatsanura michina;
✔ Thermal yekuwedzera coefficient yeSiC substrate idiki pane iyo yeAlN neGaN, iyo inokonzeresa kushushikana kwekupisa pakati peiyo epitaxial layer uye substrate panguva yekutonhora. Waltereit naBrand vakafanotaura maererano nemigumisiro yavo yekutsvaga kuti dambudziko iri rinogona kuderedzwa kana kugadziriswa nekukura kweGaN epitaxial layers pamatepi akaonda, akabatana akabatanidzwa AlN nucleation layers;
✔ Dambudziko rekushaya kunyorova kweGa atomu. Kana uchikura GaN epitaxial layers zvakananga paSiC pamusoro, nekuda kwekunyorova kwemvura pakati pemaatomu maviri, GaN inotarisana nekukura kwechitsuwa che3D pane substrate surface. Kuunza buffer layer ndiyo inonyanya kushandiswa mhinduro yekuvandudza kunaka kwe epitaxial zvinhu muGaN epitaxy. Kuunza AlN kana AlxGa1-xN buffer layer inogona kunyatso kuvandudza kunyorova kweSiC pamusoro uye kuita kuti GaN epitaxial layer ikure mumativi maviri. Mukuwedzera, inogonawo kugadzirisa kushushikana uye kudzivirira substrate defects kubva pakuwedzera kuGaN epitaxy;
✔ Iyo tekinoroji yekugadzirira yeSiC substrates haina kukura, iyo substrate mutengo wakakwira, uye kune vashoma vatengesi uye kushoma kwekupa.
Tsvagiridzo yaTorres et al. inoratidza kuti kuseta iyo SiC substrate ine H2 pakupisa kwepamusoro (1600 ° C) isati yasvika epitaxy inogona kuburitsa yakarongedzerwa nhanho dhizaini pane substrate pamusoro, nekudaro kuwana yepamusoro yemhando AlN epitaxial firimu kupfuura kana yakananga. yakakura pane yekutanga substrate pamusoro. Xie uye tsvagiridzo yechikwata chake inoratidzawo kuti etching pretreatment yesilicon carbide substrate inogona kuvandudza zvakanyanya pamusoro morphology uye crystal mhando yeGaN epitaxial layer. Smith et al. vakawana kuti shinda dislocations kubva substrate/buffer layer uye buffer layer/epitaxial layer interfaces zvine chekuita nekudzika kwe substrate [5].
Mufananidzo 4 TEM morphology yeGaN epitaxial layer samples yakakura pa6H-SiC substrate (0001) pasi pemamiriro akasiyana ekurapa kwepamusoro (a) kuchenesa makemikari; (b) kuchenesa makemikari + hydrogen plasma kurapwa; (c) kuchenesa makemikari + hydrogen plasma kurapwa + 1300 ℃ hydrogen kupisa kurapwa kwe30min
GaN epitaxy paSi
Kuenzaniswa nesilicon carbide, safiro uye mamwe ma substrates, iyo silicon substrate gadziriro yekugadzirira yakakura, uye inogona kupa zvakadzikama yakakura-saizi substrates ine mutengo wakanyanya kuita. Panguva imwecheteyo, thermal conductivity uye magetsi ekugadzirisa zvakanaka, uye Si electronic device process yakakura. Iko mukana wekubatanidza zvakakwana optoelectronic GaN zvishandiso neSi zvigadzirwa zvemagetsi mune ramangwana zvinoitawo kukura kweGaN epitaxy pasilicon kukwezva zvakanyanya.
Nekudaro, nekuda kwemusiyano muhombe mune lattice constants pakati peSi substrate neGaN zvinhu, heterogeneous epitaxy yeGaN paSi substrate ndiyo yakajairwa hombe mismatch epitaxy, uye inodawo kutarisana nenhevedzano yezvinetso:
✔ Surface interface simba dambudziko. Kana GaN inokura paSi substrate, pamusoro peSi substrate inotanga kuve nitrided kuti iite amorphous silicon nitride layer iyo isingakodzeri kune nucleation uye kukura kwepamusoro-density GaN. Mukuwedzera, iyo Si surface inotanga kubata Ga, iyo inosvibisa pamusoro peSi substrate. Pakupisa kwepamusoro, kuparara kweSi surface kuchapararira muGaN epitaxial layer kuti iite matema esilicon mavara.
✔ The lattice inogara isingasviki pakati peGaN neSi yakakura (~ 17%), iyo ichaita kuti pave nekugadzirwa kwepamusoro-density threading dislocations uye kuderedza zvakanyanya kunaka kwe epitaxial layer;
✔ Kana ichienzaniswa neSi, GaN ine yakakura yekuwedzera kwemafuta coefficient (GaN's thermal yekuwedzera coefficient inenge 5.6 × 10-6K-1, Si's thermal yekuwedzera coefficient inenge 2.6 × 10-6K-1), uye makatsemuka anogona kugadzirwa muGaN epitaxial layer panguva yekutonhora kweiyo epitaxial tembiricha kune tembiricha yekamuri;
✔ Si inopindirana neNH3 patembiricha yepamusoro kuita polycrystalline SiNx. AlN haigone kuumba nucleus yakasarudzika papolycrystalline SiNx, iyo inotungamira kune kusagadzikana kutaridzika kweiyo yakazokura yakura GaN layer uye huwandu hukuru hwekuremara, zvichikonzera hurombo husina kunaka hwekristaro hweGaN epitaxial layer, uye kunyangwe kuoma mukugadzira imwe-crystalline. GaN epitaxial layer [6].
Kuti vagadzirise dambudziko rekusawirirana kwelatisi hombe, vaongorori vakaedza kuunza zvinhu zvakaita seAlAs, GaAs, AlN, GaN, ZnO, uye SiC sebuffer layers paSi substrates. Kuti udzivise kuumbwa kwepolycrystalline SiNx uye kuderedza migumisiro yaro yakaipa pakristal quality yeGaN / AlN / Si (111) zvinhu, TMAl inowanzodiwa kuti iiswe kwenguva yakati isati yasvika epitaxial kukura kweAlN buffer layer. kudzivirira NH3 kubva pakuita neyakafumurwa Si pamusoro kuti iite SiNx. Mukuwedzera, epitaxial tekinoroji senge patterned substrate tekinoroji inogona kushandiswa kuvandudza kunaka kweiyo epitaxial layer. Kuvandudzwa kwemichina iyi kunobatsira kudzivisa kuumbwa kweSiNx pane epitaxial interface, kukurudzira kukura kwezvikamu zviviri zveGaN epitaxial layer, uye kuvandudza kunaka kwekukura kwe epitaxial layer. Pamusoro pezvo, AlN buffer layer inounzwa kuti itsivise kushushikana kunokonzerwa nekusiyana kwemafuta ekuwedzera coefficients kudzivirira kuputika muGaN epitaxial layer pasilicon substrate. Tsvagiridzo yaKrost inoratidza kuti pane kuwirirana kwakanaka pakati pekukora kweAlN buffer layer uye kudzikiswa kwekunetsa. Kana iyo buffer layer inosvika 12nm, epitaxial layer yakakora kupfuura 6μm inogona kukura pasilicon substrate kuburikidza neakakodzera chirongwa chekukura pasina epitaxial layer inotsemuka.
Mushure mekuedza kwenguva refu nevatsvakurudzi, mhando yeGaN epitaxial layers yakakurira pasilicon substrates yakavandudzwa zvakanyanya, uye zvishandiso zvakadai semunda wemagetsi transistors, Schottky barrier ultraviolet detectors, blue-green LEDs uye ultraviolet lasers zvakafambira mberi zvikuru.
Muchidimbu, sezvo iyo inowanzo shandiswa GaN epitaxial substrates ese ari heterogeneous epitaxy, iwo ese anotarisana nezvinetso zvakajairika senge lattice mismatch uye misiyano mikuru mukupisa kwekuwedzera coefficients kune akasiyana madhigirii. Homogeneous epitaxial GaN substrates inogumira nekukura kwehunyanzvi, uye ma substrates haasati agadzirwa-zhinji. Mutengo wekugadzira wakakwira, saizi ye substrate idiki, uye iyo substrate mhando haina kunaka. Kuvandudzwa kweGaN epitaxial substrates itsva uye kuvandudzwa kwe epitaxial quality ichiri chimwe chezvinhu zvakakosha zvinodzivisa kuenderera mberi kweGaN epitaxial industry.
IV. Nzira dzakajairika dzeGaN epitaxy
MOCVD (makemikari vapor deposition)
Zvinoita sekuti homogeneous epitaxy paGaN substrates ndiyo yakanakisa sarudzo yeGaN epitaxy. Nekudaro, sezvo magadzirirwo emakemikari vapor deposition ari trimethylgallium uye ammonia, uye inotakura gasi ihydrogen, iyo yakajairika MOCVD yekukura tembiricha inenge 1000-1100 ℃, uye chiyero chekukura kweMOCVD chingangoita mamicrons mashoma paawa. Inogona kuburitsa nzvimbo dzakadzika padanho reatomu, iro rakakodzera kwazvo kukura heterojunctions, quantum matsime, superlattices uye zvimwe zvimiro. Kukura kwayo nekukurumidza, kufanana kwakanaka, uye kukodzera kwenzvimbo yakakura uye yakawanda-zvidimbu kukura kunowanzoshandiswa mukugadzirwa kwemaindasitiri.
MBE (molecular beam epitaxy)
Mune molecular beam epitaxy, Ga inoshandisa yekutanga sosi, uye inoshanda nitrogen inowanikwa kubva kunitrogen kuburikidza neRF plasma. Kuenzaniswa neMOCVD nzira, iyo MBE yekukura tembiricha inenge 350-400 ℃ yakaderera. Kudzikira tembiricha yekukura kunogona kudzivirira kumwe kusvibiswa kunogona kukonzerwa nemamiriro ekunze ekupisa. Iyo MBE sisitimu inoshanda pasi pe-ultra-high vacuum, iyo inobvumira kuti ibatanidze nzira dzakawanda dzekuona mu-situ. Panguva imwecheteyo, huwandu hwekukura kwayo uye huwandu hwekugadzira haugone kuenzaniswa neMOCVD, uye inonyanya kushandiswa mukutsvaga kwesainzi [7].
Mufananidzo 5 (a) Eiko-MBE schematic (b) MBE main reaction chamber schematic
HVPE nzira (hydride vapor phase epitaxy)
Iwo anotangira eiyo hydride vapor phase epitaxy nzira ndeye GaCl3 uye NH3. Detchprohm et al. yakashandisa nzira iyi kukura GaN epitaxial layer mazana emamicrons akakora pamusoro pesafire substrate. Mukuedza kwavo, mutsetse weZnO wakakura pakati pesapphire substrate uye epitaxial layer sebuffer layer, uye epitaxial layer yakasvuurwa kubva pasi pevhu. Kuenzaniswa neMOCVD neMBE, chinhu chikuru cheiyo nzira yeHVPE kukura kwayo kwepamusoro, iyo yakakodzera kugadzirwa kwemateya akakora uye zvinhu zvakawanda. Zvisinei, kana hupamhi hwe epitaxial layer inopfuura 20μm, iyo epitaxial layer inogadzirwa nenzira iyi inoputika.
Akira USUI yakaunza patterned substrate tekinoroji yakavakirwa pane iyi nzira. Vakatanga kukura mutete 1-1.5μm gobvu GaN epitaxial layer pane sapphire substrate vachishandisa MOCVD nzira. Iyo epitaxial layer yaive ne20nm gobvu yeGaN buffer layer yakakura pasi pemamiriro ekushisa akadzikama uye GaN layer inokura pasi pemamiriro ekushisa. Zvadaro, pa430 ℃, mutsara weSiO2 wakaputirwa pamusoro peiyo epitaxial layer, uye mitsetse yehwindo yakagadzirwa pafirimu yeSiO2 nephotolithography. Iyo mitsetse spacing yaive 7μm uye hupamhi hwemaski hwaibva pa1μm kusvika 4μm. Mushure mekuvandudzwa uku, vakawana GaN epitaxial layer pane 2-inch diameter sapphire substrate yaive isina kuputika uye yakatsetseka segirazi kunyangwe ukobvu hwakawedzera kusvika makumi kana kunyange mazana emamicrons. Kuremara density kwakaderedzwa kubva 109-1010cm-2 yechinyakare HVPE nzira kusvika anenge 6 × 107cm-2. Vakaratidzawo mukuedza kuti kana chiyero chekukura chichipfuura 75μm / h, nzvimbo yemuenzaniso yaizova yakaoma [8].
Mufananidzo 6 Graphical Substrate Schematic
V. Pfupiso uye Outlook
Zvishandiso zveGaN zvakatanga kubuda muna 2014 apo mwenje weblue LED wakahwina Mubairo weNobel muFizikisi gore riya, ndokupinda mundima yeveruzhinji yekuchaja zvikumbiro mumunda wemagetsi evatengi. Muchokwadi, maapplication ari mumagetsi amplifiers uye RF zvishandiso zvinoshandiswa mu5G base zviteshi izvo zvisingaonekwe nevanhu vazhinji zvakabudawo chinyararire. Mumakore achangopfuura, budiriro yeGaN-yakavakirwa mota-giredhi magetsi emagetsi inotarisirwa kuvhura nzvimbo nyowani dzekukura kumusika weGaN zvinhu zvekushandisa.
Iko kudiwa kukuru kwemusika kunosimudzira kusimudzira kweGaN-ane hukama maindasitiri uye matekinoroji. Nekukura uye kuvandudzwa kweGaN-inoenderana nemaindasitiri chain, matambudziko akatarisana neazvino GaN epitaxial tekinoroji anozopedzisira avandudzwa kana kukundwa. Mune ramangwana, vanhu vanozogadzira humwe hutsva hwe epitaxial tekinoroji uye mamwe akanakisa substrate sarudzo. Panguva iyoyo, vanhu vanozokwanisa kusarudza yakanyatsokodzera yekunze yekutsvagisa tekinoroji uye substrate yeakasiyana mashandisirwo mamiriro zvichienderana nehunhu hwemamiriro ekushandisa, uye kuburitsa yakanyanya kukwikwidza zvigadzirwa.
Nguva yekutumira: Jun-28-2024