Thermal Oxidation yeSingle Crystal Silicon

Kuumbwa kwesilicon dioxide pamusoro pesilicon kunonzi oxidation, uye kugadzirwa kwesilicon dioxide yakagadzikana uye yakasimba yakakonzera kuberekwa kwesilicon yakabatanidzwa yedunhu planar tekinoroji. Kunyange zvazvo kune nzira dzakawanda dzokukura nesilicon dioxide zvakananga pamusoro pesilicon, inowanzoitwa nekupisa kwemafuta, kujekesa iyo silicon kune yakakwirira tembiricha oxidizing nharaunda (okisijeni, mvura). Thermal oxidation nzira dzinogona kudzora ukobvu hwefirimu uye silicon / silicon dioxide interface maitiro panguva yekugadzirira silicon dioxide mafirimu. Mamwe matekiniki ekukura silicon dioxide ndeye plasma anodization uye kunyorova anodization, asi kana yeaya matekiniki akashandiswa zvakanyanya muVLSI maitiro.

Silicon inoratidza tsika yekuumba yakagadzikana silicon dioxide. Kana silicon ichangobva kutsemurwa ikaiswa kune oxidizing nharaunda (yakadai seokisijeni, mvura), inoumba iyo yakatetepa oxide layer (<20Å) kunyangwe pakamuri tembiricha. Kana silicon inoratidzwa kune oxidizing nharaunda pane yakanyanya tembiricha, gobvu oxide layer inogadzirwa nekukurumidza. Iyo yakakosha nzira yesilicon dioxide kuumbwa kubva pasilicon inonzwisiswa zvakanaka. Deal naGrove vakagadzira modhi yemasvomhu inotsanangura nemazvo kukura kwemafirimu eoxide akakora kupfuura 300Å. Vakaronga kuti oxidation iitwe nenzira inotevera, kureva, iyo oxidant (mamorekuru emvura uye mamorekuru eokisijeni) inopararira kuburikidza neiyo iripo oxide layer kuenda kuSi/SiO2 interface, uko iyo oxidant inopindirana nesilicon kuita silicon dioxide. Mhedzisiro huru yekugadzira silicon dioxide inotsanangurwa seizvi:

Iyo oxidation reaction inoitika paSi / SiO2 interface, saka kana iyo oxide layer ichikura, silicon inoramba ichidyiwa uye iyo interface inopinda zvishoma nezvishoma silicon. Zvinoenderana nehuwandu hunoenderana uye huremu hwemamorekuru esilicon uye silicon dioxide, zvinogona kuwanikwa kuti silicon inopedzwa kukora kweiyo yekupedzisira oxide layer i44%. Nenzira iyi, kana iyo oxide layer ikakura 10,000Å, 4400Å yesilicon ichapedzwa. Uhu hukama hwakakosha pakuverenga hurefu hwematanho akaumbwa pasilicon wafer. Matanho ndiwo mhedzisiro yeakasiyana oxidation mareti panzvimbo dzakasiyana pane iyo silicon wafer pamusoro.

Isu tinopawo yakakwira-kuchena graphite uye silicon carbide zvigadzirwa, izvo zvinoshandiswa zvakanyanya mukugadzira wafer senge oxidation, diffusion, uye annealing.

Gamuchirai chero vatengi vanobva kumativi ese enyika kuti vatishanyire kune imwezve hurukuro!

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