Unogona kuzvinzwisisa kunyangwe usati wambodzidza fizikisi kana masvomhu, asi zviri nyore uye zvakakodzera kune vanotanga. Kana iwe uchida kuziva zvakawanda nezveCMOS, iwe unofanirwa kuverenga zviri mukati meiyi nyaya, nekuti chete mushure mekunzwisisa mafambiro ekuyerera (kureva, maitiro ekugadzira diode) unogona kuramba uchinzwisisa zvinotevera zvirimo. Zvino ngatidzidzei nezvekuti CMOS iyi inogadzirwa sei mukambani yekutanga mune ino nyaya (tichitora isiri-yepamusoro maitiro semuenzaniso, iyo CMOS yemhando yepamusoro inosiyana muchimiro uye musimboti wekugadzira).
Chekutanga pane zvese, iwe unofanirwa kuziva kuti mawaferi anowanikwa kubva kumutengesi (silicon wafermutengesi) imwe neimwe, ine radius ye200mm (8-inchfekitari) kana 300mm (12-inchfekitari). Sezvinoratidzwa mumufananidzo uri pasi apa, chaizvoizvo zvakafanana nekeke guru, iro ratinoti substrate.
Zvisinei, hazvina kunaka kuti tizvitarise nenzira iyi. Isu tinotarisa kubva pasi kumusoro uye tinotarisa pamuchinjikwa-sectional maonero, inova nhamba inotevera.
Tevere, ngatione kuti modhi yeCMOS inotaridzika sei. Sezvo maitiro chaiwo achida zviuru zvenhanho, ini ndichataura nezve nhanho huru dzeiyo yakapfava 8-inch wafer pano.
Kugadzira Zvakanaka uye Inversion Layer:
Ndiko kuti, tsime rakasimwa mu substrate neion implantation (Ion Implantation, panozonzi imp). Kana iwe uchida kugadzira NMOS, unofanirwa kudyara P-mhando matsime. Kana iwe uchida kugadzira PMOS, unofanirwa kudyara N-mhando matsime. Kuti zvive nyore kwauri, ngatitore NMOS semuenzaniso. Muchina wekusima ion unodyara maP-mhando zvinhu kuti zviiswe musubstrate kusvika pakadzika, uye wobva wadzipisa pakupisa kwakanyanya muchubhu yechoto kuti ivhure maion aya nekuaparadzira kumativi. Izvi zvinopedzisa kugadzirwa kwetsime. Izvi ndizvo zvinoita sekunge mushure mekugadzirwa kwapera.
Mushure mekugadzira tsime, kune mamwe matanho ekuisa ion, chinangwa chekudzora saizi yechiteshi chezvino uye chikumbaridzo voltage. Wese munhu anogona kuidaidza kuti inversion layer. Kana iwe uchida kugadzira NMOS, inversion layer inodyarwa neP-type ions, uye kana uchida kugadzira PMOS, inversion layer inodyarwa neN-type ions. Mushure mekudyara, ndiyo inotevera modhi.
Pane zvakawanda zvemukati pano, senge simba, kona, ion concentration panguva yekuisirwa ion, nezvimwewo, izvo zvisina kubatanidzwa mune ino nyaya, uye ndinotenda kuti kana iwe uchiziva zvinhu izvo, unofanirwa kunge uri wemukati, uye iwe. anofanira kuva nenzira yokudzidza nawo.
Kugadzira SiO2:
Silicon dioxide (SiO2, inozonzi oxide) ichaitwa gare gare. Muchirongwa chekugadzira CMOS, kune nzira dzakawanda dzekugadzira okisidhi. Pano, SiO2 inoshandiswa pasi pegedhi, uye ukobvu hwayo hunobata zvakananga ukuru hwechikumbaridzo voltage uye ukuru hwechiteshi chezvino. Naizvozvo, vazhinji vanovamba vanosarudza choto chechubhu oxidation nzira ine hupamhi hwepamusoro, hutongi hwehukobvu hwakanyanya, uye kufanana kwakanyanya padanho iri. Muchokwadi, iri nyore kwazvo, ndiko kuti, muchoto chubhu ine okisijeni, tembiricha yakakwira inoshandiswa kubvumira okisijeni nesilicon kuti iite kemikari kugadzira SiO2. Nenzira iyi, chidimbu cheSiO2 chinogadzirwa pamusoro peSi, sezvinoratidzwa mumufananidzo uri pasi apa.
Zvechokwadi, kunewo ruzivo rwakawanda pano, sekuti madhigirii mangani anodiwa, kuti oksijeni yakawanda sei inodiwa, inguva yakareba sei kupisa kwekushisa kunodiwa, nezvimwewo. Izvi hazvisi izvo zvatiri kufunga zvino, izvo ndizvo yakanyanyisa.
Kugadzirwa kwegedhi yekupedzisira Poly:
Asi hazvisati zvapera. SiO2 yakangofanana neshinda, uye gedhi chairo (Poly) harisati ratanga. Saka danho redu rinotevera nderekuisa chidimbu chepolysilicon paSiO2 (polysilicon inoumbwawo nesilicon element, asi marongero elatisi akasiyana.Usandibvunza kuti sei substrate ichishandisa crystal silicon imwechete uye gedhi rinoshandisa polysilicon. ibhuku rinonzi Semiconductor Physics Unogona kudzidza nezvaro Zvinonyadzisa. Poly zvakare inobatanidza zvakanyanya muCMOS, asi chikamu chepoly ndiSi, uye haigone kugadzirwa nekuita kwakananga neSi substrate sekukura SiO2. Izvi zvinoda iyo inozivikanwa CVD (Chemical Vapor Deposition), iyo ndeyekuita kemikari muvacuum uye inonamira chinhu chakagadzirwa pawafer. Mumuenzaniso uyu, chinhu chinogadzirwa ndeye polysilicon, uye yobva yanaya pawafer (pano ndinofanira kutaura kuti poly inogadzirwa muchoto chubhu neCVD, saka chizvarwa chepoly hachiitwe nemuchina wakachena weCVD).
Asi iyo polysilicon yakaumbwa neiyi nzira ichave yakanyoroveswa pane yese wafer, uye inotaridzika seizvi mushure mekunaya.
Kuratidzwa kwePoly uye SiO2:
Pane iyi nhanho, chimiro chakamira chatinoda chakanyatso kuumbwa, chine poly kumusoro, SiO2 pazasi, uye substrate pazasi. Asi ikozvino wafer yese yakaita seizvi, uye isu tinongoda nzvimbo chaiyo yekuve iyo "faucet" chimiro. Saka pane danho rakanyanya kukosha mukuita kwese - kuratidzwa.
Isu tinotanga kuparadzira dhizaini yephotoresist pamusoro peiyo wafer, uye inova seizvi.
Wobva waisa iyo yakatsanangurwa masikisi (yedunhu muenzaniso yakatsanangurwa pane masikisi) pairi, uye pakupedzisira ivheneke nechiedza cheiyo wavelength. Iyo photoresist inozoitwa activated munzvimbo ine irradiated. Sezvo nzvimbo yakavharwa nemaski isina kuvhenekerwa nemwenje sosi, ichi chidimbu chephotoresist hachina kuvhurwa.
Sezvo iyo activated photoresist iri kunyanya nyore kushambidzwa neimwe kemikari mvura, nepo isina activated photoresist haigone kushambidzwa, mushure meradiation, imwe mvura inoshandiswa kushambidza iyo yakabatidzwa photoresist, uye pakupedzisira inova seizvi, ichisiya photoresist apo Poly neSiO2 inoda kuchengetwa, uye kubvisa photoresist paisingadi kuchengetwa.
Nguva yekutumira: Aug-23-2024