SiC yakavharidzirwa mabhesi egraphite anowanzo kushandiswa kutsigira uye kupisa imwe crystal substrates musimbi-organic chemical vapor deposition (MOCVD) midziyo. Kugadzikana kwekupisa, kufanana kwekupisa uye mamwe maparamendi eSiC akavharidzirwa graphite base anoita basa rakasimba mumhando ye epitaxial zvinhu kukura, saka ndiyo yakakosha chikamu cheMOCVD michina.
Mukuita kwekugadzira wafer, epitaxial layers inovakwazve pane mamwe wafer substrates kufambisa kugadzirwa kwemidziyo. Yakajairika LED mwenje-emitting michina inoda kugadzirira epitaxial layers yeGaAs pane silicon substrates; Iyo SiC epitaxial layer inokura pane conductive SiC substrate yekuvakwa kwemidziyo yakadai seSBD, MOSFET, nezvimwewo, kune yakakwira voltage, yakakwira ikozvino uye mamwe magetsi ekushandisa; GaN epitaxial layer inovakwa pane semi-insulated SiC substrate kuti ienderere mberi nekuvaka HEMT nemimwe michina yeRF application senge kutaurirana. Iyi nzira haiparadzaniswe kubva kuCVD michina.
Mumidziyo yeCVD, iyo substrate haigone kuiswa zvakananga pasimbi kana kungoiswa pachigadziko che epitaxial deposition, nekuti inosanganisira kuyerera kwegasi (yakatwasuka, yakatwasuka), tembiricha, kudzvanywa, kugadzirisa, kudurura zvinosvibisa uye zvimwe zvinhu. pesvedzero zvinhu. Nokudaro, chigadziko chinodiwa, uye ipapo substrate inoiswa pa diski, uye ipapo epitaxial deposition inoitwa pane substrate uchishandisa CVD teknolojia, uye iyi nheyo ndiyo SiC yakavharidzirwa graphite base (inozivikanwawo setireyi).
SiC yakavharidzirwa mabhesi egraphite anowanzo kushandiswa kutsigira uye kupisa imwe crystal substrates musimbi-organic chemical vapor deposition (MOCVD) midziyo. Kugadzikana kwekupisa, kufanana kwekupisa uye mamwe maparamendi eSiC akavharidzirwa graphite base anoita basa rakasimba mumhando ye epitaxial zvinhu kukura, saka ndiyo yakakosha chikamu cheMOCVD michina.
Metal-organic chemical vapor deposition (MOCVD) ndiyo tekinoroji yakakura yekukura epitaxial kwemafirimu eGaN mublue LED. Iyo ine mabhenefiti ekushanda kuri nyore, kudzoreka kukura mwero uye kuchena kwakanyanya kwemafirimu eGaN. Sechikamu chakakosha mukamuri yekupindura yeMOCVD midziyo, iyo inotakura base inoshandiswa kuGaN film epitaxial kukura inoda kuva nezvakanakira kushivirira kwekushisa kwepamusoro, yunifomu yekushisa conductivity, kunaka kwemakemikari kugadzikana, kusimba kwekushisa kwekushisa, etc. Graphite zvinhu zvinogona kusangana mamiriro ari pamusoro.
Sechimwe chezvikamu zvakakosha zveMOCVD midziyo, graphite base ndiyo inotakura uye inodziya muviri we substrate, iyo inotarisa zvakananga kufanana uye kuchena kwezvinhu zvemufirimu, saka kunaka kwayo kunobata zvakananga kugadzirirwa kwe epitaxial sheet, uye panguva imwe chete. nguva, nekuwedzera kwenhamba yekushandiswa uye shanduko yemamiriro ekushanda, zviri nyore kwazvo kupfeka, zvezvinoshandiswa.
Kunyange zvazvo graphite ine yakanakisa yekupisa conductivity uye kugadzikana, ine mukana wakanaka sechikamu chechikamu cheMOCVD midziyo, asi mukugadzira, graphite inoshatisa hupfu nekuda kwekusara kwemagasi anoparadza uye esimbi organics, uye hupenyu hwesevhisi. graphite base ichaderedzwa zvakanyanya. Panguva imwecheteyo, kudonha kwe graphite powder kunokonzera kusvibiswa kune chip.
Kubuda kwekombiki tekinoroji kunogona kupa pamusoro pehupfu kugadzirisa, kuwedzera kupisa conductivity, uye kuenzana kupisa kugovera, iyo yave iyo huru tekinoroji yekugadzirisa dambudziko iri. Graphite base muMOCVD midziyo yekushandisa nharaunda, graphite base yekumusoro coating inofanirwa kusangana neanotevera maitiro:
(1) Chigadziko chegraphite chinogona kuputirwa zvizere, uye density yakanaka, kana zvisina kudaro girafu chigadziko chiri nyore kuputirwa mugasi rinopisa.
(2) Iko kusanganiswa kwesimba neiyo graphite base yakakwira kuti ive nechokwadi chekuti kupfekedza hakusi nyore kudonha mushure mekuwedzera tembiricha uye kuderera kwekushisa kutenderera.
(3) Iine kugadzikana kwakanaka kwekemikari kudzivirira kukanganisa kwekuputira mukupisa kwakanyanya uye mhepo inoparadza.
SiC ine zvakanakira corrosion resistance, high thermal conductivity, thermal shock resistance uye high chemical stability, uye inogona kushanda zvakanaka muGaN epitaxial atmosphere. Uye zvakare, iyo yekupisa yekuwedzera coefficient yeSiC inosiyana zvishoma kubva kune iyo yegraphite, saka SiC ndiyo inosarudzirwa zvinhu zvekuputira pamusoro pegraphite base.
Parizvino, iyo yakajairika SiC inonyanya 3C, 4H uye 6H mhando, uye iyo SiC inoshandisa emhando dzakasiyana dzekristaro dzakasiyana. Semuenzaniso, 4H-SiC inogona kugadzira michina ine simba guru; 6H-SiC ndiyo yakanyanya kugadzikana uye inogona kugadzira mapikicha emagetsi; Nekuda kwechimiro chayo chakafanana neGaN, 3C-SiC inogona kushandiswa kugadzira GaN epitaxial layer uye kugadzira SiC-GaN RF zvishandiso. 3C-SiC inowanzonziwo β-SiC, uye kushandiswa kwakakosha kwe β-SiC kwakafanana nefirimu uye kupfekedza zvinhu, saka β-SiC ikozvino ndiyo inonyanya kushandiswa kwekugadzira.
Nzira yekugadzira silicon carbide coating
Parizvino, nzira dzekugadzirira dzeSiC coating dzinonyanya kusanganisira gel-sol nzira, embedding method, brush coating method, plasma spraying method, chemical gas reaction method (CVR) uye chemical vapor deposition method (CVD).
Embedding nzira:
Iyo nzira imhando yemhando yepamusoro tembiricha yakasimba chikamu sintering, iyo inonyanya kushandisa musanganiswa weSi poda uye C hupfu sehupfu hwekuisa, iyo graphite matrix inoiswa muhupfu hwekuisa, uye tembiricha yekupisa inoitwa muinert gasi. , uye pakupedzisira SiC coating inowanikwa pamusoro peiyo graphite matrix. Iyo nzira iri nyore uye musanganiswa pakati pekuputira neiyo substrate yakanaka, asi kufanana kwejasi pamwe negwara reukobvu hakuna kunaka, izvo zviri nyore kuburitsa mamwe maburi uye zvinotungamira mukusagadzikana oxidation kuramba.
Brush coating nzira:
Iyo bhurashi yekubikira nzira inonyanya kukwesha mvura yakasvibirira pamusoro peiyo graphite matrix, uye wobva warapa iyo mbishi pane imwe tembiricha kugadzirira iyo coating. Maitiro acho ari nyore uye mutengo wakaderera, asi iyo yekupfekedza inogadzirwa nebhurashi yekubikira nzira haina kusimba pamwe neiyo substrate, iyo yekupfeka yakafanana haina kunaka, iyo yekupfeka itete uye oxidation kuramba yakadzikira, uye dzimwe nzira dzinodiwa kubatsira. it.
Plasma spraying nzira:
Iyo plasma yekupfapfaidza nzira inonyanya kupfapfaidza yakanyunguduka kana semi-yakanyunguduka mbishi pamusoro peiyo graphite matrix nepfuti yeplasma, uye wobva waomesa uye sunga kuti uite coating. Iyo nzira iri nyore kushanda uye inogona kugadzirira yakaomesesa silicon carbide coating, asi iyo silicon carbide coating yakagadzirwa neiyo nzira kazhinji haina kusimba uye inotungamira kune isina kusimba oxidation kuramba, saka inowanzo shandiswa kugadzirira kweSiC composite coating kuvandudza. kunaka kwekuputira.
Gel-sol nzira:
Iyo gel-sol nzira inonyanya kugadzirira yunifomu uye yakajeka sol mhinduro inovhara pamusoro pematrix, ichiomesa kuita gel uyezve sinter kuti iwane yekuputira. Iyi nzira iri nyore kushandisa uye yakaderera mumutengo, asi iyo yekupfeka inogadzirwa ine zvimwe zvikanganiso senge yakaderera thermal shock resistance uye nyore kuputika, saka haigone kushandiswa zvakanyanya.
Chemical Gasi Reaction (CVR) :
CVR inonyanya kugadzira SiC coating nekushandisa Si uye SiO2 poda kugadzira SiO chiutsi pakupisa kwakanyanya, uye nhevedzano yemakemikari reactions inoitika pamusoro peC material substrate. Iyo SiC coating yakagadzirirwa neiyi nzira yakanyatso sungirirwa kune substrate, asi maitiro tembiricha akakwira uye mutengo wakakwira.
Chemical Vapor Deposition (CVD):
Parizvino, CVD ndiyo tekinoroji huru yekugadzirira SiC coating pane substrate pamusoro. Iyo huru maitiro ndeyekutevedzana kwemuviri uye kemikari maitiro egasi chikamu chinogadzirisa zvinhu pane substrate pamusoro, uye pakupedzisira iyo SiC coating inogadzirirwa nekuisa pane substrate pamusoro. Iyo SiC coating yakagadzirirwa neCVD tekinoroji yakanyatso sunganidzwa kumusoro kweiyo substrate, iyo inogona zvinobudirira kuvandudza oxidation kuramba uye ablative kuramba kweiyo substrate zvinhu, asi nguva yekuisa nzira iyi yakareba, uye gasi rekuita rine imwe chepfu. gasi.
Mamiriro emusika weSiC yakavharwa graphite base
Apo vagadziri vekunze vakatanga kutanga, vaive nemutungamiri wakajeka uye mugove wemusika wepamusoro. Pasi rose, vatengesi vakuru veSiC yakavharwa graphite base iDutch Xycard, Germany SGL Carbon (SGL), Japan Toyo Carbon, iyo United States MEMC nemamwe makambani, ayo anonyanya kutora musika wepasirese. Kunyangwe China yakatyora iyo yakakosha tekinoroji yekukura kwakafanana kweSiC coating pamusoro pegraphite matrix, yepamusoro-mhando graphite matrix ichiri kuvimba neGerman SGL, Japan Toyo Carbon nemamwe mabhizinesi, iyo graphite matrix inopihwa nemabhizinesi epamba inokanganisa sevhisi. hupenyu nekuda kwekupisa conductivity, elastic modulus, rigid modulus, retice kuremara uye mamwe matambudziko emhando. Iyo MOCVD midziyo haigone kusangana nezvinodiwa zvekushandiswa kweSiC yakavharwa graphite base.
Indasitiri yeChina semiconductor iri kusimukira nekukurumidza, nekuwedzera zvishoma nezvishoma kweMOCVD epitaxial michina yenzvimbo, uye mamwe maitiro ekuwedzera maapplication, iyo remangwana SiC yakavharwa graphite base chigadzirwa musika inotarisirwa kukura nekukurumidza. Zvinoenderana nefungidziro yeindasitiri yekutanga, musika wepasi graphite base uchapfuura 500 miriyoni yuan mumakore mashoma anotevera.
SiC yakavharwa graphite base ndiyo yakakosha chikamu checompound semiconductor maindasitiri emidziyo, kugona iyo yakakosha tekinoroji yekugadzirwa kwayo nekugadzira, uye kuona kuiswa kwenzvimbo yese yeraw material-process-equipment industry cheni ine hunyanzvi hwakakosha kuti uve nechokwadi chekuvandudzwa. China's semiconductor industry. Munda weSiC yakavharwa graphite base iri kuwedzera, uye mhando yechigadzirwa inogona kusvika padanho repamusoro repasirese munguva pfupi.
Nguva yekutumira: Jul-24-2023