Yakasiyana kubva kuS1C discrete zvishandiso zvinoteedzera yakakwira voltage, simba rakawanda, yakakwirira frequency uye yakakwirira tembiricha maitiro, chinangwa chekutsvagisa cheSiC chakabatanidzwa chedunhu chinonyanya kuwana tembiricha yepamusoro yedhijitari yehungwaru simba ICs control circuit. Sezvo SiC yakabatanidzwa yedunhu yemukati yemagetsi munda yakadzikira zvakanyanya, saka kufurira kweiyo microtubules kukanganisa kuchaderera zvakanyanya, ichi ndicho chikamu chekutanga che monolithic SiC yakasanganiswa yekushanda amplifier chip yakasimbiswa, iyo chaiyo yakapedzwa chigadzirwa uye yakatemwa negoho yakakwira zvakanyanya. kupfuura microtubules urema, saka, kwakavakirwa SiC goho modhi uye Si uye CaAs zvinhu zviri pachena zvakasiyana. Iyo chip yakavakirwa pakuderera kweNMOSFET tekinoroji. Chikonzero chikuru ndechekuti iyo inoshanda yekutakura yekufambisa yereverse chiteshi SiC MOSFETs yakadzikira. Kuti uvandudze kufamba kwepamusoro kweSic, zvinodikanwa kuvandudza uye kukwidziridza iyo yekupisa oxidation maitiro eSic.
Purdue Yunivhesiti yakaita basa rakawanda paSiC yakasanganiswa maseketi. Mu1992, fekitori yakabudirira kugadzirwa zvichibva pane reverse chiteshi 6H-SIC NMOSFETs monolithic dhijitari yakabatanidzwa sedunhu. Chipu chine uye kwete gedhi, kana kwete gedhi, pamusoro kana gedhi, kaunda yebhinari, uye hafu yeadder maseketi uye inogona kushanda nemazvo mutembiricha ye25°C kusvika 300°C. Muna 1995, ndege yekutanga yeSiC MESFET Ics yakagadzirwa uchishandisa vanadium jekiseni isolation tekinoroji. Nekunyatso kudzora huwandu hwevanadium jekiseni, inodzivirira SiC inogona kuwanikwa.
Mudhijitari logic maseketi, maseketi eCMOS anoyevedza kupfuura maseketi eNMOS. MunaGunyana 1996, yekutanga 6H-SIC CMOS dhijitari yakabatanidzwa yedunhu yakagadzirwa. Chishandiso chinoshandisa jekiseni N-order uye deposition oxide layer, asi nekuda kwemamwe matambudziko ekuita, chip PMOSFETs pachikumbaridzo voltage yakawandisa. Muna Kurume 1997 pakugadzira yechipiri chizvarwa SiC CMOS dunhu. Iyo tekinoroji yekubaya P trap uye thermal kukura oxide layer inogamuchirwa. Chikumbaridzo voltage yePMOSEFTs inowanikwa nekuvandudza maitiro ingangoita -4.5V. Masekete ese ari pachipu anoshanda zvakanaka pakudziya kwekamuri kusvika ku300 ° C uye anofambiswa nemagetsi ega ega, anogona kuve chero kubva pa5 kusvika ku15V.
Nekuvandudzwa kwemhando ye substrate wafer, mamwe anoshanda uye akakwira goho akasanganiswa maseketi achagadzirwa. Nekudaro, kana iyo SiC zvinhu uye matambudziko ekugadzirisa agadziriswa, kuvimbika kwechishandiso uye pasuru kuchava chinhu chikuru chinokanganisa kuita kwepamusoro-tembiricha SiC yakabatanidzwa maseketi.
Nguva yekutumira: Aug-23-2022