Parizvino, indasitiri yeSiC iri kushanduka kubva pa150 mm (6 inches) kuenda pa200 mm (8 inches). Kuti usangane nekukasira kudiwa kwehukuru-hukuru, hwemhando yepamusoro SiC homoepitaxial wafers muindasitiri, 150mm uye 200mm.4H-SiC homoepitaxial wafersdzakagadzirwa zvakabudirira pama substrates epamba vachishandisa yakazvimirira yakagadziridzwa 200mm SiC epitaxial kukura michina. A homoepitaxial process inokodzera 150mm uye 200mm yakagadzirwa, iyo iyo epitaxial yekukura mwero inogona kuva yakakura kupfuura 60um / h. Ndichiri kusangana neyepamusoro-kumhanya epitaxy, iyo epitaxial wafer mhando yakanaka. Ukobvu kufanana kwe150 mm uye 200 mmSiC epitaxial wafersinogona kudzorwa mukati me1.5%, iyo yekusimbisa kufanana iri pasi pe3%, iyo inouraya kuremara density iri pasi pe 0.3 particles/cm2, uye epitaxial pamusoro roughness mudzi zvinoreva square Ra iri pasi pe0.15nm, uye ese core process zviratidzo zviri pa mwero wepamusoro weindasitiri.
Silicon Carbide (SiC)mumwe wevamiriri vechitatu-chizvarwa semiconductor zvinhu. Iyo ine hunhu hwekuparara kwemunda simba, yakanakisa kupisa conductivity, hombe erekitironi saturation drift velocity, uye yakasimba radiation kuramba. Iyo yakawedzera zvakanyanya simba rekugadzirisa simba remidziyo yemagetsi uye inokwanisa kusangana nezvinodiwa zvesevhisi zvechizvarwa chinotevera chemagetsi emidziyo yemidziyo ine simba rakakura, diki diki, tembiricha yakakwira, mwaranzi yakakura uye mamwe mamiriro akanyanya. Inogona kuderedza nzvimbo, kuderedza kushandiswa kwesimba uye kuderedza kutonhora zvinodiwa. Yakaunza shanduko yekuchinja kumotokari nyowani dzesimba, kutakura njanji, smart grid uye mamwe minda. Naizvozvo, silicon carbide semiconductors yave kuzivikanwa seyakanakira zvinhu zvinotungamira chizvarwa chinotevera chepamusoro-simba masimba emagetsi emagetsi. Mumakore achangopfuura, nekuda kwerutsigiro rwemitemo yenyika yekusimudzira indasitiri yechizvarwa chechitatu semiconductor, kutsvagisa nekusimudzira uye kuvaka kweiyo 150 mm SiC mudziyo indasitiri system yakapedzwa muChina, uye kuchengetedzeka kweindasitiri cheni. zvakavimbiswa. Naizvozvo, tarisiro yeindasitiri yachinja zvishoma nezvishoma kuenda kukudzora mutengo uye kuvandudzwa kwehunyanzvi. Sezvinoratidzwa muTable 1, zvichienzaniswa ne150 mm, 200 mm SiC ine mwero wepamusoro wekushandisa, uye kubuda kweimwe wafer machipisi kunogona kuwedzerwa nekanosvika ka1.8. Mushure mekunge tekinoroji yakura, mutengo wekugadzira we chip imwechete unogona kuderedzwa ne30%. Kubudirira kwetekinoroji ye200 mm inzira yakananga ye "kudzikisa mutengo uye kuwedzera kushanda zvakanaka", uye zvakare ndiyo kiyi yeindasitiri yenyika yangu semiconductor "kumhanya parallel" kana kunyange "kutungamira".
Yakasiyana neSi device process,SiC semiconductor magetsi zvishandisoese anogadziriswa uye akagadzirirwa ne epitaxial layers sedombo rekona. Epitaxial wafers zvakakosha zvekushandisa zveSiC magetsi maturusi. Unhu hwe epitaxial layer inogadzirisa zvakananga goho remudziyo, uye mutengo wayo unotora 20% yemutengo wekugadzira chip. Naizvozvo, epitaxial kukura chinhu chakakosha chepakati chinongedzo muSiC magetsi maturusi. Muganhu wepamusoro we epitaxial process level inotarwa ne epitaxial midziyo. Parizvino, dhigirii renzvimbo ye150mm SiC epitaxial midziyo muChina yakakwira zvakati, asi dhizaini yese ye200mm inosarira kuseri kwedanho repasirese panguva imwe chete. Naizvozvo, kuitira kugadzirisa zvinodikanwa zvekukurumidzira uye matambudziko emabhodhoro ehukuru-hukuru, hwemhando yepamusoro epitaxial material yekugadzira kugadzirwa kwemusha wechitatu-chizvarwa semiconductor indasitiri, bepa rino rinounza 200 mm SiC epitaxial michina yakabudirira kugadzirwa munyika yangu, uye inodzidza epitaxial process. Nekugadzirisa maparamendi ekuita senge tembiricha yekushanda, mutakuri gasi kuyerera, C/Si chiyero, nezvimwewo, iyo yekumisikidza kufanana <3%, ukobvu husina kufanana <1.5%, roughness Ra <0.2 nm uye inouraya defect density <0.3 tsanga /cm2 ye150 mm uye 200 mm SiC epitaxial wafers ine yakazvimiririra yakagadzirwa 200 mm silicon carbide epitaxial choto chinowanikwa. Iyo yemidziyo process level inogona kusangana nezvinodiwa zvemhando yepamusoro SiC magetsi mudziyo kugadzirira.
1 Kuedza
1.1 Nheyo yeSiC epitaxialprocess
Iyo 4H-SiC homoepitaxial kukura maitiro anonyanya kusanganisira maviri akakosha matanho, anoti, yakakwirira-tembiricha in-situ etching ye4H-SiC substrate uye homogeneous kemikari vapor deposition process. Chinangwa chikuru che substrate in-situ etching ndechekubvisa kukuvadzwa kwepasi peiyo substrate mushure mekupenya kwewaferi, yakasara yekupukuta mvura, zvimedu uye oxide layer, uye yakajairwa atomu nhanho nhanho inogona kuumbwa pane substrate pamusoro ne etching. In-situ etching inowanzoitwa mumhepo yehydrogen. Zvinoenderana nezvinodiwa chaizvo zvemaitiro, diki diki gasi rinobatsira rinogonawo kuwedzerwa, senge hydrogen chloride, propane, ethylene kana silane. Tembiricha ye-in-situ hydrogen etching kazhinji iri pamusoro pe1 600 ℃, uye kudzvanywa kwekamuri yekupindura kunowanzo kudzorwa pazasi 2 × 104 Pa panguva yekucheka maitiro.
Mushure meiyo substrate nzvimbo yaitwa ne-in-situ etching, inopinda mukati-yepamusoro-tembiricha kemikari vapor deposition process, kureva, pakukura sosi (senge ethylene/propane, TCS/silane), doping source (n-type doping source nitrogen. , p-type doping source TMAl), uye gasi rinobatsira senge hydrogen chloride inotakurwa kuenda kukamuri yekupindura kuburikidza nekuyerera kukuru kweanotakura gasi. (kazhinji hydrogen). Mushure mekunge gasi raita mukamuri yekupisa-yepamusoro-yekupisa, chikamu cheiyo precursor chinopindirana nemakemikari uye adsorbs pawafer pamusoro, uye imwe-crystal homogeneous 4H-SiC epitaxial layer ine chaiyo doping concentration, kukora chaiko, uye mhando yepamusoro inoumbwa. pane substrate pamusoro uchishandisa imwe-crystal 4H-SiC substrate se template. Mushure memakore ekuongorora kwehunyanzvi, tekinoroji ye4H-SiC homoepitaxial yakura uye inoshandiswa zvakanyanya mukugadzira maindasitiri. Iyo inonyanya kushandiswa 4H-SiC homoepitaxial tekinoroji munyika ine maviri akajairika maitiro:
(1) Kushandisa off-axis (inoenderana ne <0001> crystal plane, yakananga <11-20> crystal direction) oblique cut substrate se template, high-purity single-crystal 4H-SiC epitaxial layer isina tsvina ndiyo yakaiswa pane substrate muchimiro chenhanho-kuyerera kwekukura modhi. Early 4H-SiC homoepitaxial kukura yakashandisa yakanaka crystal substrate, kureva, iyo <0001> Si ndege yekukura. Kuwanda kwematanho eatomu pamusoro peiyo yakanaka crystal substrate yakadzikira uye maturu akafara. Maviri-dimensional nucleation kukura ari nyore kuitika panguva epitaxy process kuumba 3C crystal SiC (3C-SiC). Necheka-axis kucheka, yakakwira-density, yakamanikana terrace yakafara nhanho dzeatomu dzinogona kuunzwa pamusoro pe4H-SiC <0001> substrate, uye adsorbed precursor inogona zvinobudirira kusvika paatomu nhanho chinzvimbo ine yakadzikira pasi pesimba kuburikidza nekupararira kwepamusoro. . Padanho, precursor atomu / molecular boka bonding chinzvimbo chakasarudzika, saka munhanho yekuyerera yekukura modhi, iyo epitaxial layer inogona kunyatsogara nhaka yeSi-C yakapetwa kaviri atomic layer stacking sequence ye substrate kuti igadzire kristaro imwechete ine kristaro yakafanana. chikamu se substrate.
(2) Kukura-kumhanya epitaxial kukura kunowanikwa nekuunza chlorine-ine silicon sosi. Mune akajairwa SiC makemikari vapor deposition masisitimu, silane uye propane (kana ethylene) ndiwo makuru ekukura masosi. Mukuita kwekuwedzera chiyero chekukura nekuwedzera iyo yekukura sosi yekuyerera mwero, sezvo kuenzana kwechikamu kudzvinyirirwa kwesilicon chikamu kuri kuramba kuchiwedzera, zviri nyore kuumba masumbu esilicon nehomogeneous gas phase nucleation, iyo inoderedza zvakanyanya chiyero chekushandisa. silicon source. Kuumbwa kwemasumbu esilicon kunodzora zvakanyanya kuvandudzwa kweiyo epitaxial kukura mwero. Panguva imwecheteyo, masumbu esilicon anogona kukanganisa nhanho yekuyerera kukura uye kukonzera kuremara nucleation. Kuti udzivise homogeneous gas phase nucleation uye kuwedzera epitaxial kukura rate, kuiswa kweklorine-based silicon sources ikozvino ndiyo nzira huru yekuwedzera epitaxial kukura kwe4H-SiC.
1.2 200 mm (8-inch) SiC epitaxial midziyo uye maitiro ekugadzirisa
Zviyedzo zvinotsanangurwa mubepa rino zvese zvakaitwa pa150/200 mm (6/8-inch) inoenderana monolithic yakatwasuka inopisa madziro SiC epitaxial midziyo yakazvimiririra yakagadziridzwa ne48th Institute of China Electronics Technology Group Corporation. Iyo epitaxial furnace inotsigira zvizere otomatiki wafer kurodha uye kurodha. Mufananidzo 1 dhiyabhorosi dhiyabhorosi yemukati chimiro chekamuri yekupindura ye epitaxial midziyo. Sezvinoratidzwa muMufananidzo 1, rusvingo rwekunze rwekamuri yekupindura ibhero re quartz rine mvura-yakanyoroveswa interlayer, uye mukati mebhero inzvimbo yepamusoro-yekushisa inopindirana nekamuri, iyo inoumbwa nemhepo inopisa kabhoni inonzwa, yakakwirira-kuchena. special graphite cavity, graphite gas-floating rotating base, etc. Bhero rese requartz rakafukidzwa necylindrical induction coil, uye reaction chamber mukati mebhero inodziiswa nemagetsi nepakati-frequency induction power supply. Sezvinoratidzwa muMufananidzo 1 (b), gasi rinotakura, rinoita gasi, uye gasi redoping zvese zvinoyerera nepamusoro pechifukidziro chelaminar yakachinjika inoyerera ichibva kumusoro kwekamuri yekupindura ichienda kuzasi kwekamuri yekupindura uye inoburitswa kubva kumuswe. gasi kupera. Kuti ive nechokwadi chekuenderana mukati mewafer, wafer inotakurwa nemhepo inoyangarara base inogara ichitenderedzwa panguva yekuita.
Iyo substrate inoshandiswa mukuedza ndeyekutengesa 150 mm, 200 mm (6 inches, 8 inches) <1120> direction 4 ° off-angle conductive n-type 4H-SiC double-sided polished SiC substrate yakagadzirwa naShanxi Shuoke Crystal. Trichlorosilane (SiHCl3, TCS) uye ethylene (C2H4) inoshandiswa senzvimbo huru yekukura mukuedza kwekuedza, pakati peiyo TCS neC2H4 inoshandiswa sesilicon source uye carbon source zvakateerana, high-purity nitrogen (N2) inoshandiswa se n- type doping source, uye hydrogen (H2) inoshandiswa se dilution gasi uye gasi rinotakura. Iyo tembiricha yemhando ye epitaxial process ndeye 1 600 ~ 1 660 ℃, iyo process pressure ndeye 8 × 103 ~ 12 × 103 Pa, uye H2 inotakura gasi inoyerera inosvika 100 ~ 140 L/min.
1.3 Epitaxial wafer yekuyedza uye maitiro
Fourier infrared spectrometer (mugadziri wemidziyo Thermalfisher, modhi iS50) nemercury probe concentration tester (mugadziri wezvishandiso Semilab, modhi 530L) zvakashandiswa kuratidza zvinoreva uye kuparadzirwa kweepitaxial layer ukobvu uye doping concentration; ukobvu uye doping concentration yeimwe neimwe point muepitaxial layer yakatemwa nekutora mapoinzi parutivi rwedhayamita mutsara uchipindirana neyakajairwa mutsara weiyo main reference edge pa45 ° pakati pechifukidzo ne5 mm kumucheto kubviswa. Kune 150 mm wafer, 9 mapoinzi akatorwa pamwe chete dhayamita mutsara (madhayamita maviri aive perpendicular kune mumwe nemumwe), uye kune 200 mm wafer, 21 mapoinzi akatorwa, sezvakaratidzwa mumufananidzo 2. An atomic simba microscope (equipment mugadziri Bruker, modhi Dimension Icon) yakashandiswa kusarudza 30 μm × 30 μm nzvimbo munzvimbo yepakati nenzvimbo yekumucheto (5 mm kumucheto. kubvisa) ye epitaxial wafer kuti uedze hutsinye hwepamusoro hwe epitaxial layer; kukanganiswa kweiyo epitaxial layer kwakayerwa pachishandiswa chepamusoro chakaremara tester (mugadziri wemidziyo China Electronics Iyo 3D imager yaionekwa neradar sensor (model Mars 4410 pro) kubva kuKefenghua.
Nguva yekutumira: Sep-04-2024