Chemical vapor deposition(CVD)ndiyo inonyanya kushandiswa tekinoroji muindasitiri yesemiconductor yekuisa zvinhu zvakasiyana siyana, zvinosanganisira zvakasiyana siyana zvekudzivirira, simbi yakawanda uye simbi alloy zvinhu.
CVD itsika yakatetepa yekugadzirira tekinoroji. Nheyo yayo ndeye kushandisa gaseous precursors kuodza zvimwe zvikamu mu precursor kuburikidza nekuita kwemakemikari pakati peatomu nemamorekuru, uyezve kugadzira firimu rakatetepa pane substrate. Zvinhu zvinokosha zveCVD ndezvi: kuchinja kwemakemikari (makemikari maitiro kana kuora kwekushisa); zvinhu zvose zviri mufirimu zvinobva kunze; mareactants anofanirwa kutora chikamu mukuita muchimiro chegasi chikamu.
Low pressure chemical vapor deposition (LPCVD), plasma yakawedzera makemikari vapor deposition (PECVD) uye high density plasma kemikari vapor deposition (HDP-CVD) matatu akajairwa CVD matekinoroji, ane misiyano yakakura mukuiswa kwezvinhu, zvinodiwa zvemidziyo, mamiriro ekuita, nezvimwe. .Inotevera itsananguro yakapfava uye kuenzanisa kweaya matekinoroji matatu.
1. LPCVD (Low Pressure CVD)
Nheyo: A CVD maitiro pasi pekudzvinyirira kwakaderera mamiriro. Nheyo yayo ndeyekuisa jekiseni rekuita gasi mukamuri yekupindura pasi pevacuum kana yakaderera kudzvanywa nharaunda, kuora kana kuita gasi nekupisa kwakanyanya, uye kugadzira firimu rakasimba rakaiswa pane substrate pamusoro. Sezvo kudzvinyirira kwakaderera kunoderedza gasi kudhumhana uye mhirizhonga, kufanana uye kunaka kwefirimu kunovandudzwa. LPCVD inoshandiswa zvakanyanya musilicon dioxide (LTO TEOS), silicon nitride (Si3N4), polysilicon (POLY), phosphosilicate girazi (BSG), borophosphosilicate girazi (BPSG), doped polysilicon, graphene, carbon nanotubes nemamwe mafirimu.
Features:
▪ Tembiricha yekugadzira: kazhinji iri pakati pe500 ~ 900°C, tembiricha yemaitiro inenge yakakwira;
▪ Gasi rinopisa mutsara: kuderera kwakadzika nharaunda ye0.1 ~ 10 Torr;
▪ Unhu hwefirimu: mhando yemhando yepamusoro, kufanana kwakanaka, kuwanda kwakanaka, uye kukanganisa kushoma;
▪ Deposition rate: inononoka deposition rate;
▪ Uniformity: inokodzera ma substrates mahombe, yunifomu deposition;
Advantages uye kuipa:
▪ Inogona kuisa mafirimu akafanana uye akakora;
▪ Inoita zvakanaka pamasaizi makuru, akakodzera kugadzirwa kwakawanda;
▪ Mutengo wakaderera;
▪ Tembiricha yepamusoro, isingakodzeri zvinhu zvinonzwa kupisa;
▪ Deposition rate inononoka uye inobuda ishoma.
2. PECVD (Plasma Enhanced CVD)
Nheyo: Shandisa plasma kumisa gasi kuita kwegasi pane yakaderera tembiricha, ionize uye kuora mamorekuru mugasi rekuita, uye wozoisa mafirimu matete pane substrate pamusoro. Simba replasma rinogona kuderedza zvakanyanya tembiricha inodiwa pakuita, uye ine huwandu hwakawanda hwekushandisa. Akasiyana siyana esimbi mafirimu, inorganic mafirimu uye organic mafirimu anogona kugadzirwa.
Features:
▪ Tembiricha yekugadzira: kazhinji iri pakati pe200 ~ 400°C, tembiricha inenge yakaderera;
▪ Gasi redhisheni: kazhinji mazana emTorr kune akati wandei Torr;
▪ Unhu hwefirimu: kunyange zvazvo kufanana kwefirimu kwakanaka, kuwanda uye kunaka kwefirimu hazvina kunaka seLPCVD nekuda kwehurema hunogona kuunzwa neplasma;
▪ Deposition rate: high rate, high production performance;
▪ Kufanana: yakaderera zvishoma kune LPCVD pazvikamu zvakakura-saizi;
Advantages uye kuipa:
▪ Mafirimu matete anogona kuiswa patembiricha yakaderera, akakodzera zvinhu zvinonzwa kupisa;
▪ Fast deposition speed, yakakodzera kugadzirwa kwakanaka;
▪ Flexible process, zvinhu zvemufirimu zvinogona kudzorwa nekugadzirisa plasma parameters;
▪ Plasma inogona kuunza kukanganisa kwemafirimu semapinhole kana kusafanana;
▪ Kana ichienzaniswa neLPCVD, kuwanda kwefirimu uye kunaka kwaro kwakawedzera zvishoma.
3. HDP-CVD (High Density Plasma CVD)
Nheyo: Yakakosha PECVD tekinoroji. HDP-CVD (inozivikanwawo seICP-CVD) inogona kuburitsa yakakwira plasma density uye mhando pane yechinyakare PECVD michina pakudzika kwakadzika tembiricha. Uye zvakare, HDP-CVD inopa inenge yakazvimirira ion flux uye simba rekudzora, kuvandudza mugero kana gomba rekuzadza hunyanzvi hwekuda kuiswa kwemafirimu, senge anti-reflective coatings, yakaderera dielectric inogara zvinhu deposition, nezvimwe.
Features:
▪ Tembiricha yekugadzira: tembiricha yekamuri kusvika 300 ℃, tembiricha yakadzika kwazvo;
▪ Gasi remagetsi: pakati pe1 ne100 mTorr, yakaderera pane PECVD;
▪ Unhu hwefirimu: high plasma density, high film quality, yakanaka kufanana;
▪ Deposition rate: deposition rate iri pakati peLPCVD nePECVD, yakakwira zvishoma pane LPCVD;
▪ Kufanana: nokuda kweplasma yakakwirira-density, kufanana kwefirimu kwakanakisisa, kwakakodzera nzvimbo dzakaoma-zvakaoma substrate;
Advantages uye kuipa:
▪ Kukwanisa kuisa mafirimu emhando yepamusoro pane tembiricha yakaderera, akanyatsokodzera zvinhu zvinodzivirira kupisa;
▪ Kufanana kwemafirimu kwakanakisa, kusimba uye kutsvedzerera kwepasi;
▪ Kuwanda kweplasma kunonatsiridza kufanana kwekuisa uye firimu;
▪ Midziyo yakaoma uye inodhura;
▪ Kumhanyisa kwekuisa kunononoka, uye simba replasma rakakwirira rinogona kuunza kukuvara kudiki.
Gamuchirai chero vatengi vanobva kumativi ese enyika kuti vatishanyire kune imwezve hurukuro!
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Nguva yekutumira: Zvita-03-2024