SiC micro poda inogadzirwa sei?

SiC single crystal iGroup IV-IV compound semiconductor material inoumbwa nezvinhu zviviri, Si uye C, muchiyero che stoichiometric che1:1. Kuomarara kwayo ndekwechipiri kune dhaimondi.

Iyo kabhoni kuderedzwa kwesilicon oxide nzira yekugadzirira SiC inonyanya kuenderana neinotevera kemikari maitiro formula:

Kuita kwekabhoni kuderedzwa kwesilicon oxide kwakaomarara, umo tembiricha yekuita inobata zvakananga chigadzirwa chekupedzisira.

Mukugadzirisa maitiro esilicon carbide, zvigadzirwa zvinotanga kuiswa muchoto chekudzivirira. Choto chekupikisa chine madziro ekupedzisira kumativi ose maviri, ane graphite electrode pakati, uye muchoto wevira unobatanidza magetsi maviri. Pamuganhu wechoto chechoto, zvinhu zvakasvibirira zvinotora chikamu mukuita zvinotanga kuiswa, uye ipapo zvinhu zvinoshandiswa kuchengetedza kupisa zvinoiswa padivi. Kana kunyungudutswa kunotanga, choto chekudzivirira chinopihwa simba uye tembiricha inokwira kusvika pa2,600 kusvika 2,700 madhigirii Celsius. Magetsi emagetsi ekupisa simba anotamirwa kune mutero kuburikidza nepamusoro pechoto chechoto, zvichiita kuti zvishoma nezvishoma kupisa. Kana tembiricha yemuchaji ichipfuura 1450 madhigirii celsius, kemikari inoitika kuburitsa silicon carbide uye kabhoni monoxide gasi. Sezvo nzira yekunyungudutsa ichienderera mberi, nzvimbo yepamusoro-yekushisa mucheji ichawedzera zvishoma nezvishoma, uye huwandu hwesilicon carbide hunogadzirwa huchawedzerawo. Silicon carbide inoramba ichiumbwa muchoto, uye kuburikidza nekubuda uye kufamba, makristasi anokura zvishoma nezvishoma uye anozopedzisira aungana kuita cylindrical crystals.

Chikamu chemukati memadziro ekristaro chinotanga kuora nekuda kwekupisa kwepamusoro kunopfuura 2,600 degrees Celsius. Iyo silicon element inogadzirwa nekuora ichabatana nekabhoni element muchaji kuti igadzire itsva silicon carbide.

Kana kemikari yekuita kwesilicon carbide (SiC) yapera uye choto chadzika, nhanho inotevera inogona kutanga. Kutanga, madziro echoto anobviswa, uye ipapo zvinhu zvakasvibirira muchoto zvinosarudzwa uye zvakaiswa graded layer. Izvo zvakasarudzwa zvigadzirwa zvinopwanyika kuti tiwane granular zvinhu zvatinoda. Zvadaro, kusvibiswa mune zvigadzirwa zvinobviswa kuburikidza nekugezwa kwemvura kana kuchenesa ne acid uye alkali solutions, pamwe nekuparadzanisa magnetic nedzimwe nzira. Izvo zvakacheneswa mbishi zvinhu zvinoda kuomeswa uye zvozoongororwa zvakare, uye pakupedzisira yakachena silicon carbide poda inogona kuwanikwa. Kana zvichidikanwa, upfu uhwu hunogona kuvandudzwa maererano nekushandiswa chaiko, senge kuumba kana kugaya zvakanaka, kugadzira yakatsetseka silicon carbide poda.

Matanho chaiwo ndeaya anotevera:

(1) Raw materials

Green silicon carbide micro poda inogadzirwa nekupwanya coarser green silicon carbide. Kemikari yesilicon carbide inofanira kuva yakakura kudarika 99%, uye yemahara kabhoni uye iron oxide inofanira kuva isingasviki 0.2%.

(2)Kutyoka

Kupwanya jecha resilicon carbide kuita hupfu hwakatsetseka, nzira mbiri dziri kushandiswa kuChina, imwe ndeyekupwanya bhora remvura inopfungaira, uye imwe iri kupwanya uchishandisa chigayo chehupfu.

(3)Kuparadzaniswa kwemagineti

Hazvina mhosva kuti ndeipi nzira inoshandiswa kupwanya silicon carbide poda kuita hupfu hwakatsetseka, kunyorova kwemagineti kupatsanurwa uye mechanical magnetic separation inowanzoshandiswa. Izvi zvinodaro nekuti hapana guruva panguva yekunyorova kwemagineti kupatsanurwa, izvo zvemagineti zvakapatsanurwa zvachose, chigadzirwa mushure mekuparadzaniswa kwemagineti chine simbi shoma, uye iyo silicon carbide poda yakatorwa neiyo magineti zvakare ishoma.

(4)Kuparadzaniswa kwemvura

Musimboti weiyo nzira yekuparadzanisa mvura ndeye kushandisa akasiyana ekumisa kumhanya kwesilicon carbide zvimedu zvemadhayamita akasiyana mumvura kuita particle size yekuronga.

(5) Ultrasonic kuongorora

Nekuvandudzwa kwehunyanzvi hwekugadzira tekinoroji, yakashandiswawo zvakanyanya mu ultrasonic screening ye micro-powder tekinoroji, iyo inogona kunyatso kugadzirisa matambudziko ekuongorora akadai seyakasimba adsorption, nyore agglomeration, yakakwira static magetsi, kukwirira kwakanyanya, kukwirira kwepamusoro, uye chiedza chakajeka giravhiti. .

(6)Kuongorora kwehutano

Kuongororwa kwemhando ye Micropowder kunosanganisira kuumbwa kwemakemikari, particle size size uye zvimwe zvinhu. Kuti uwane nzira dzekuongorora uye mazinga emhando, ndapota tarisa kune "Silicon Carbide technical Conditions."

(7) Kukuya huruva kugadzira

Mushure mekunge iyo micro powder yaiswa mumapoka uye yakaongororwa, musoro wezvinhu unogona kushandiswa kugadzirira kukuya poda. Kugadzirwa kwehupfu hwekukuya kunogona kuderedza marara uye kuwedzera ketani yechigadzirwa.