Parizvino,silicon carbide (SiC)ndeye thermally conductive ceramic material iyo inoshingaira kudzidzwa kumba nekune dzimwe nyika. Iyo theoretical thermal conductivity yeSiC yakakwirira kwazvo, uye mamwe mafomu ekristaro anogona kusvika 270W/mK, inotova mutungamiri pakati pezvinhu zvisiri-conductive. Semuenzaniso, kushandiswa kweSiC thermal conductivity kunogona kuonekwa mu substrate zvinhu zve semiconductor madivayiri, high thermal conductivity ceramic materials, heaters and heat plates for semiconductor processing, capsule materials for nuclear fuel, uye gasi sealing rings for compressor pumps.
Kushandiswa kwesilicon carbidemumunda we semiconductor
Kukuya madhisiki uye zvigadziriso zvakakosha maitiro emidziyo yesilicon wafer kugadzirwa mune semiconductor indasitiri. Kana iyo dhisiki yekukuya yakagadzirwa nesimbi yakakandwa kana kabhoni simbi, hupenyu hwayo hwesevhisi hupfupi uye huwandu hwayo hwekuwedzera hwekupisa hwakakura. Munguva yekugadziriswa kwesilicon wafers, kunyanya panguva yekumhanyisa-kukuya kana kupukuta, nekuda kwekupfeka uye kupisa deformation yekukuya disc, flatness uye parallelism yesilicon wafer yakaoma kuvimbisa. Iyo yekukuya disc yakagadzirwasilicon carbide ceramicsine kupera kwakaderera nekuda kwekuoma kwayo, uye kupisa kwayo kwekuwedzera kweiyo coefficient yakangofanana neyesilicon wafers, saka inogona pasi uye kukwenenzverwa nekumhanya kwakanyanya.
Uye zvakare, kana silicon wafers inogadzirwa, inoda kurapwa yakakwira-tembiricha yekupisa uye inowanzotakurwa uchishandisa silicon carbide fixtures. Izvo zvinodzivirira kupisa uye hazviparadzi. Dhaimondi-rakafanana nekabhoni (DLC) uye mamwe machira anogona kuiswa pamusoro kuti awedzere kuita, kuderedza kukuvadzwa kwewafer, uye kudzivirira kusvibiswa kubva pakupararira.
Uyezve, semumiriri wechizvarwa chechitatu-yakafara-bandgap semiconductor zvinhu, silicon carbide single crystal zvinhu zvine zvivakwa zvakaita senge hombe bandgap hupamhi (inenge 3 nguva iyo yeSi), yakanyanya kupisa conductivity (inenge 3.3 nguva iyo yeSi kana ka10 iyo yeGaAs), high electron saturation migration rate (inenge 2.5 times iyo yeSi) uye nzvimbo yemagetsi yekuparara kwepamusoro (inenge 10 nguva yeSi kana 5 nguva iyo yeGaAs). Zvishandiso zveSiC zvinogadzira kukanganisa kwechinyakare semiconductor zvinhu zvishandiso mune zvinoshanda maapplication uye zvishoma nezvishoma zviri kuita iwo makuru emagetsi semiconductors.
Iko kudiwa kwepamusoro kupisa conductivity silicon carbide ceramics kwakawedzera zvakanyanya
Nekuenderera mberi kwekuvandudzwa kwesainzi uye tekinoroji, kudiwa kwekushandiswa kwesilicon carbide ceramics mumunda we semiconductor kwawedzera zvakanyanya, uye yakakwirira yekupisa yekupisa ndiyo chiratidzo chakakosha chekushandiswa kwayo mumichina yekugadzira semiconductor. Naizvozvo, zvakakosha kusimbaradza tsvakiridzo pane yakakwira yekupisa conductivity silicon carbide ceramics. Kuderedza iyo lattice okisijeni yemukati, kuvandudza density, uye zvine musoro kudzora kugoverwa kwechikamu chechipiri mulatisi ndiyo nzira huru dzekuvandudza kupisa kwekupisa kwesilicon carbide ceramics.
Parizvino, pane zvidzidzo zvishoma pamusoro pekupisa kwekushisa kwesilicon carbide ceramics munyika yangu, uye kuchine gaka rakakura kana richienzaniswa nepasirese. Nhungamiro dzekutsvaga dzemangwana dzinosanganisira:
●Simbisa nzira yekugadzirira tsvakurudzo yesilicon carbide ceramic powder. Kugadzirira kwepamusoro-kuchena, pasi-oxygen silicon carbide powder ndiyo nheyo yekugadzirira kwepamusoro-soro conductivity silicon carbide ceramics;
● Simbisa kusarudzwa kwezviyamuro zve sintering uye tsvakurudzo yakabatana yezvinyorwa;
●Simbisa kutsvagisa nekuvandudza kwepamusoro-yekupedzisira sintering michina. Nekugadzirisa iyo sintering maitiro kuti uwane inonzwisisika microstructure, ihwo hunodiwa mamiriro ekuwana yakakwira yekupisa conductivity silicon carbide ceramics.
Matanho ekuvandudza kupisa kwekushisa kwesilicon carbide ceramics
Kiyi yekuvandudza iyo yekupisa conductivity yeSiC ceramics ndeyekudzikisa iyo phonon kuparadzira frequency uye kuwedzera iyo phonon inoreva yemahara nzira. Thermal conductivity yeSiC ichave yakagadziridzwa zvinobudirira nekudzikisa porosity uye zviyo muganho density yeSiC ceramics, kuvandudza kuchena kweSiC miganhu yezviyo, kuderedza SiC lattice tsvina kana retice defects, uye kuwedzera kupisa kuyerera kutapurirana mutakuri muSiC. Parizvino, optimizing rudzi uye zvirimo zveSintering aids uye yakakwirira-tembiricha kupisa kurapwa ndiwo matanho makuru ekuvandudza thermal conductivity yeSiC ceramics.
① Kukwenenzvera mhando uye zvirimo zvekushandisa sintering
Yakasiyana-siyana sintering aids inowanzo wedzerwa pakugadzirira yakakwira yekupisa conductivity SiC ceramics. Pakati pavo, mhando uye zvirimo zveSintering aids zvine pesvedzero huru pane yekupisa conductivity yeSiC ceramics. Semuenzaniso, Al kana O zvinhu muAl2O3 system sintering aids zvinonyungudika zviri nyore muSiC lattice, zvichikonzera vacancies uye hurema, izvo zvinotungamira kuwedzera kweiyo phonon kuparadzira frequency. Mukuwedzera, kana zviri mukati me sintering aid zvakaderera, zvinhu zvacho zvakaoma kuita sinter uye densify, nepo yakakwirira yezvinyorwa sintering aids ichaita kuti kuwedzera kusvibiswa uye kukanganisa. Yakawandisa mvura chikamu sintering aids inogona zvakare kutadzisa kukura kweSiC zviyo uye kuderedza nzira yemahara yemaphononi. Naizvozvo, kuitira kugadzirira yakakwira yekupisa yekupisa SiC ceramics, zvinodikanwa kudzikisa zvirimo zveSintering aids zvakanyanya sezvinobvira uchisangana nezvinodiwa zve sintering density, uye edza kusarudza sintering aids yakaoma kunyungudika muSiC lattice.
* Thermal zvimiro zveSiC ceramics kana akasiyana sintering aids awedzerwa
Parizvino, inopisa-yakatsikirirwa SiC ceramics sintered neBeO sechiyamuro chinopisa chine kamuri-tembiricha yekushisa conductivity (270W · m-1 · K-1). Nekudaro, BeO chinhu chine muchetura zvakanyanya uye carcinogenic, uye haina kukodzera kushandiswa kwakapararira mumarabhoritari kana minda yemaindasitiri. Iyo yakaderera eutectic point yeY2O3-Al2O3 system ndeye 1760 ℃, inova yakajairika mvura-chikamu sintering rubatsiro rweSiC ceramics. Nekudaro, sezvo Al3 + inonyungudika nyore nyore muSiC lattice, kana iyi sisitimu ichishandiswa seyamuro yekupisa, iyo kamuri-yekushisa yekupisa conductivity yeSiC ceramics isingasviki 200W · m-1 · K-1.
Kashoma pasi zvinhu zvakaita seY, Sm, Sc, Gd uye La hazvinyungudika nyore muSiC lattice uye zvine yakakwira oxygen affinity, iyo inogona kunyatso kudzikisa okisijeni yemukati yeSiC lattice. Nokudaro, Y2O3-RE2O3 (RE=Sm, Sc, Gd, La) system inowanzoshandiswa sintering aid yekugadzirira high thermal conductivity (> 200W · m-1 · K-1) SiC ceramics. Kutora iyo Y2O3-Sc2O3 sisitimu sintering rubatsiro semuenzaniso, iyo ion yekutsauka kukosha kweY3+ uye Si4+ yakakura, uye izvo zviviri hazviitike mhinduro yakasimba. Kunyungudika kweSc muSiC yakachena pa 1800 ~ 2600 ℃ idiki, inenge (2~3) × 1017atoms · cm-3.
② Kupisa kwekushisa kwepamusoro kurapwa
Kupisa kwekushisa kwepamusoro kweSiC ceramics kunobatsira kubvisa kukanganisa kwelatisi, kuparadzanisa uye kusara kunetseka, kusimudzira shanduko yezvimwe zvinhu zveamorphous kune makristasi, uye kuderedza phonon scattering effect. Mukuwedzera, kupisa kwepamusoro-kupisa kurapwa kunogona kusimudzira kukura kweSiC zviyo, uye pakupedzisira kunatsiridza kupisa kwezvinhu zvezvinhu. Semuenzaniso, mushure mekupisa kwekushisa kwepamusoro-soro pa 1950 ° C, iyo yekupisa kupararira coefficient yeSiC ceramics yakawedzera kubva 83.03mm2 · s-1 kusvika 89.50mm2 · s-1, uye kamuri-tembiricha yekupisa yekupisa yakawedzera kubva 180.94W · m. -1·K-1 kusvika 192.17W·m-1·K-1. Kurapa kwekupisa kwekupisa kwakanyanya kunovandudza kugona kwe deoxidation ye sintering aid pane SiC pamusoro uye lattice, uye inoita kuti kubatana pakati peSiC tsanga dzinyanye. Mushure mekupisa kwekupisa kwekupisa, kamuri-tembiricha yekupisa yeSiC ceramics yakagadziridzwa zvakanyanya.
Nguva yekutumira: Oct-24-2024