BCD process

Chii chinonzi BCD process?

BCD process ndeye single-chip integrated process tekinoroji yakatanga kuunzwa neST muna 1986. Iyi tekinoroji inogona kugadzira michina yebipolar, CMOS uye DMOS pane imwechete chip. Kuonekwa kwayo kunoderedza zvakanyanya nzvimbo yechip.

Zvinogona kutaurwa kuti maitiro eBCD anoshandisa zvizere zvakanakira Bipolar kutyaira kugona, CMOS yakakwirira kusanganisa uye kuderera kwesimba rekushandisa, uye DMOS yakakwira voltage uye yakakwira ikozvino kuyerera. Pakati pavo, DMOS ndiyo kiyi yekuvandudza simba nekubatanidza. Nekuwedzera kwekuvandudzwa kweiyo yakabatanidzwa yedunhu tekinoroji, BCD process yave yakanyanya kugadzira tekinoroji yePMIC.

BCD process cross-sectional diagram, source network, ndatenda

Zvakanakira zveBCD process

BCD maitiro inogadzira Bipolar zvishandiso, CMOS zvishandiso, uye DMOS midziyo yemagetsi pane imwechete chip panguva imwe chete, ichibatanidza yakakwira transconductance uye yakasimba mutoro wekutyaira kugona kwebipolar zvishandiso uye kubatanidzwa kwakanyanya uye kuderera kwesimba rekushandisa kweCMOS, kuti vakwanise kutsigirana. mumwe nomumwe uye kupa kutamba kwakazara kune avo vakasiyana zvakanakira; panguva imwe chete, DMOS inogona kushanda mukuchinja mode ine yakanyanya kuderera simba rekushandisa. Muchidimbu, kushandiswa kwesimba kwakaderera, kushanda nesimba kwepamusoro uye kubatanidzwa kwepamusoro ndeimwe yemabhenefiti makuru eBCD. BCD maitiro anogona kuderedza zvakanyanya mashandisirwo emagetsi, kuvandudza mashandiro ehurongwa uye kuve nekuvimbika kuri nani. Mabasa ezvigadzirwa zvemagetsi ari kuwedzera zuva nezuva, uye zvinodiwa zvekuchinja kwemagetsi, kuchengetedza capacitor uye kuwedzera kwehupenyu hwebhatiri zviri kuwedzera kukosha. Iyo yakakwirira-kumhanya uye inochengetedza simba maitiro eBCD inosangana nezvinodiwa zvemaitiro epamusoro-kuita analog/simba manejimendi machipisi.

Makiyi matekinoroji eBCD maitiro

Midziyo yemhando yeBCD process inosanganisira low-voltage CMOS, high-voltage MOS machubhu, LDMOS ine akasiyana-siyana breakdown voltages, vertical NPN/PNP uye Schottky diodes, nezvimwewo. Mamwe maitiro anobatanidzawo midziyo yakadai seJFET neEEPROM, zvichiita kuti pave nemhando dzakasiyana-siyana. zvishandiso muBCD process. Naizvozvo, pamusoro pekutarisa kuenderana kwe-high-voltage zvishandiso uye yakaderera-voltage zvishandiso, kaviri-tinya maitiro uye CMOS maitiro, nezvimwewo mukugadzira, yakakodzera yekuzviparadzanisa tekinoroji inofanirawo kutariswa.

MuBCD yekuzviparadzanisa tekinoroji, akawanda matekinoroji akadai sejunction yekuzviparadzanisa nevamwe, kuzviparadzanisa nevamwe uye dielectric isolation yakabuda imwe mushure meimwe. Junction isolation tekinoroji ndeyekugadzira mudziyo uri paN-type epitaxial layer yeP-type substrate uye kushandisa reverse bias maitiro ePN junction kuti uwane yekuzviparadzanisa nevamwe, nekuti iyo PN junction ine yakanyanya kupikisa pasi pekurerekera kumashure.

Kuzviparadzanisa nevamwe tekinoroji ndeye PN junction yekuzviparadzanisa nevamwe, iyo inotsamira pane yakasikwa PN jekiseni hunhu pakati penzvimbo uye dhiza matunhu echishandiso uye substrate kuti uwane yekuzviparadzanisa nevamwe. Kana iyo MOS chubhu ikabatidzwa, dunhu rinobva, dunhu remvura uye chiteshi zvakakomberedzwa nedunhu rekuderera, zvichiita kuparadzaniswa kubva kune substrate. Kana ichinge yadzimwa, iyo PN junction pakati penzvimbo yekudonhedza uye substrate inodzokera kumashure yakarerekera, uye yakakwira voltage yenzvimbo yekubva inoparadzaniswa nenzvimbo yekuderera.

Dielectric isolation inoshandisa insulating media senge silicon oxide kuwana kuzviparadzanisa nevamwe. Kubva pane dielectric isolation uye junction isolation, quasi-dielectric isolation yakagadziriswa nekubatanidza zvakanakira zvese zviri zviviri. Nekusarudza kutora iyo iri pamusoro yekuzviparadzanisa tekinoroji, yakakwira-voltage uye yakaderera-voltage kuenderana inogona kuwanikwa.

Kuvandudza kutungamira kweBCD maitiro

Kuvandudzwa kweBCD process tekinoroji hakuna kufanana neyakajairwa CMOS maitiro, ayo agara achitevera mutemo waMoore kusimudzira munzira yediki mutsara upamhi uye nekukurumidza kumhanya. BCD maitiro akasiyaniswa uye akagadziridzwa mumativi matatu: yakakwira voltage, yakakwira simba, uye yakakwira density.

1. High-voltage BCD nzira

Yakakwira-voltage BCD inogona kugadzira yakakwirira-yakavimbika yakaderera-voltage control maseketi uye ekupedzisira-yakakwirira-voltage DMOS-level maseketi pane imwechete chip panguva imwe chete, uye inogona kuona kugadzirwa kwe500-700V high-voltage zvishandiso. Nekudaro, kazhinji, BCD ichiri yakakodzera kune zvigadzirwa zvine zvakati wandei zvinodikanwa zvemagetsi zvishandiso, kunyanya BJT kana yakakwira-ikozvino DMOS zvishandiso, uye inogona kushandiswa kutonga kwemagetsi mukuvhenekesa kwemagetsi uye maindasitiri ekushandisa.

Tekinoroji iripo yekugadzira yakakwira-voltage BCD ndiyo tekinoroji yeRESURF yakakurudzirwa naAppel et al. muna 1979. Chigadzirwa chacho chinogadzirwa uchishandisa zvishoma doped epitaxial layer kuita kuti nzvimbo yemagetsi yemunda iparadzirwe yakapfava, nekudaro inovandudza maitiro ekuputsika kwepamusoro, kuitira kuti kuparara kunoitika mumuviri panzvimbo pepamusoro, nokudaro kuwedzera kuparara kwechigadzirwa. Chiedza doping ndiyo imwe nzira yekuwedzera kuputsa voltage yeBCD. Iyo inonyanya kushandisa kaviri diffused drain DDD (double Doping Drain) uye zvishoma doped drain LDD (zvishoma Doping Drain). Munharaunda yeDMOS drainage, N-type Drift dunhu inowedzerwa kushandura yekutanga kuonana pakati peN+ drain neP-type substrate kusvika pakubata pakati peN-drain neP-type substrate, nekudaro ichiwedzera voltage yekuputsa.

2. High-simba BCD kutungamira

Iyo voltage yemhando yepamusoro-simba BCD ndeye 40-90V, uye inonyanya kushandiswa mumagetsi emotokari izvo zvinoda kutyaira kwazvino kutyaira, yepakati voltage uye nyore kudzora maseketi. Hunhu hwayo hwekuda hwakakwira ikozvino kutyaira, yepakati voltage, uye dunhu rekudzora rinowanzo nyore.

3. High-density BCD kutungamira

High-density BCD, voltage range i5-50V, uye mamwe magetsi emotokari achasvika 70V. Zvakawanda uye zvakanyanya kuomarara uye akasiyana mabasa anogona kubatanidzwa pane imwechete chip. Yakakwira-density BCD inotora mamwe modular dhizaini mazano kuti uwane kusiyanisa kwechigadzirwa, inonyanya kushandiswa mumotokari yemagetsi ekushandisa.

Zvikumbiro zveBCD maitiro

BCD maitiro anoshandiswa zvakanyanya mukugadzirisa simba (simba uye bhatiri kutonga), kuratidza motokari, motokari yemagetsi, kutonga kwemaindasitiri, etc. Power management chip (PMIC) ndeimwe yemhando dzakakosha dzeanalog chips. Iko kusanganiswa kweBCD maitiro uye SOI tekinoroji zvakare chinhu chikuru chekuvandudza kweBCD maitiro.

VET-China inogona kupa graphite zvikamu, softrigid inonzwa, silicon carbide zvikamu, cvD silicon carbide zvikamu, uye sic/Tac yakavharwa zvikamu nemazuva makumi matatu.
Kana iwe uchifarira zviri pamusoro semiconductor zvigadzirwa, ndapota usazeza kutibata nesu panguva yekutanga.

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