Kushandisa uye kufambira mberi kwekutsvagisa kweSiC kupfekedza mucarbon/carbon thermal field materials for monocrystalline silicon-2

1 Kushandisa uye kufambira mberi kwekutsvagisa kwesilicon carbide coating mucarbon / carbon thermal field materials

1.1 Kushanda uye kufambira mberi kwetsvagiridzo mukugadzirira kwakakosha

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Mune imwechete crystal yekudziya munda, iyokabhoni / carbon crucibleinonyanya kushandiswa semudziyo wekutakura wesilicon zvinhu uye iri kusangana neiyoquartz crucible, sezvinoratidzwa mumufananidzo 2. Kupisa kwekushanda kwekabhoni / carbon crucible inenge 1450., iyo inoiswa pasi pekukukurwa kwekaviri kwesilicon dioxide (silicon dioxide) uye silicon vapor, uye pakupedzisira iyo crucible inova mutete kana ine mhete yakatsemuka, zvichikonzera kutadza kweiyo crucible.

Iyo inosanganiswa yekuputira kabhoni / kabhoni inoumbwa crucible yakagadzirwa nemakemikari vapor permeation process uye in-situ reaction. Iyo yakasanganiswa yekupfeka yaive yakagadzirwa nesilicon carbide coating (100 ~ 300μm), silicon coating (10 ~ 20μm) uye silicon nitride coating (50 ~ 100μm), iyo inogona kunyatso kuvharidzira kukora kwesilicon mhute mukati mepamusoro pekabhoni / kabhoni inoumba crucible. Mukugadzira, kurasikirwa kweiyo composite yakavharwa kabhoni / kabhoni composite crucible ndeye 0.04 mm pachoto, uye hupenyu hwesevhisi hunogona kusvika zana nemakumi masere evira.

Vatsvakurudzi vakashandisa kemikari yekuita nzira kugadzira yunifomu yesilicon carbide coating pamusoro pekabhoni / carbon composite crucible pasi pemamwe mamiriro ekupisa uye kudzivirira gasi rinotakura, vachishandisa silicon dioxide uye silicon simbi semidziyo yakasvibirira mune yakanyanya-tembiricha sintering. choto. Mhedzisiro yacho inoratidza kuti tembiricha yepamusoro haingogadziri kuchena uye kusimba kweiyo sic coating, asi zvakare inovandudza zvakanyanya kupfeka kuramba kweiyo kabhoni / kabhoni composite, uye inodzivirira kukora kwepamusoro peiyo crucible neSiO vapor. uye maatomu eokisijeni anoputika mumonocrystal silicon choto. Hupenyu hwesevhisi hwe crucible hunowedzerwa ne20% kana ichienzaniswa neiyo yecrucible isina sic coating.

1.2 Kushandisa nekufambira mberi kwetsvakiridzo muchubhu inoyerera

Iyo silinda yekutungamira iri pamusoro peiyo crucible (sezvinoratidzwa mumufananidzo 1). Mukuita kudhonzwa kwekristaro, musiyano wetembiricha pakati pemukati nekunze wemunda wakakura, kunyanya pasi pepasi padyo nesilicon yakanyungudutswa, tembiricha ndiyo yakanyanya kunaka, uye kukoromoka nesilicon vapor ndiko kwakanyanya kuoma.

Vatsvakurudzi vakagadzira nzira yakapfava uye yakanaka oxidation kuramba kweiyo inotungamira chubhu anti-oxidation coating uye nzira yekugadzirira. Chekutanga, dhizaini yesilicon carbide whisker yaive mu-situ yakakurira pamatrix yechubhu inotungamira, uyezve dense silicon carbide yekunze layer yakagadzirwa, kuitira kuti SiCw yekushandura layer yakaumbwa pakati pematrix uye dense silicon carbide pamusoro. , sezvinoratidzwa muMufananidzo 3. Kubatana kwekuwedzera kwekushisa kwaiva pakati pematrix uye silicon carbide. Inogona kunyatso kuderedza kushushikana kwekushisa kunokonzerwa nekusawirirana kwemafuta ekuwedzera coefficient.

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Ongororo yacho inoratidza kuti nekuwedzera kweSiCw zvemukati, saizi uye nhamba yekutsemuka mujasi inoderera. Mushure me10h oxidation mu1100mhepo, uremu hwekuremerwa kweiyo sampu yekupfekedza ingori 0.87% ~ 8.87%, uye iyo oxidation kuramba uye kupisa kutyisa kupikisa kwesilicon carbide coating inovandudzwa zvakanyanya. Iyo yese gadziriro yekugadzirira inopedzwa zvichienderera mberi nemakemikari vapor deposition, kugadzirira kwesilicon carbide coating inorerutswa zvakanyanya, uye kushanda kwakazara kweiyo nozzle yese kunosimbiswa.

Vatsvakurudzi vakakurudzira nzira yekusimbisa matrix uye pamusoro pekuvhara kwegraphite guide chubhu ye czohr monocrystal silicon. Iyo yakawanikwa silicon carbide slurry yakavharwa zvakafanana pamusoro peiyo graphite inotungamira chubhu ine coating ukobvu hwe30 ~ 50.μm nebrashi yekuputira kana kupfapfaidza nzira yekuputira, uye yozoiswa muchoto chekushisa chepamusoro kuitira in-situ reaction, tembiricha yekupindura yaive 1850 ~ 2300., uye kuchengetedza kupisa kwaiva 2 ~ 6h. Iyo SiC yekunze layer inogona kushandiswa mu24 mu(60.96 cm) imwe chete crystal yekukura muvira, uye tembiricha yekushandisa i1500., uye inowanikwa kuti hapana kuputika uye kudonha poda pamusoro pegirafu rinotungamirira cylinder mushure me1500h.

1.3 Kushanda uye kufambira mberi kwekutsvagisa muinsulation cylinder

Sechimwe chezvinhu zvakakosha zve monocrystalline silicon thermal field system, iyo silinda yekudzivirira inonyanya kushandiswa kudzikisa kurasikirwa nekupisa uye kudzora tembiricha gradient yenzvimbo inopisa. Sechikamu chinotsigira chemukati wemadziro ekudzivirira dhizaini yeimwe crystal furnace, silicon vapor corrosion inotungamira kune slag kudonha uye kuputika kwechigadzirwa, izvo zvinozopedzisira zvatungamira mukukundikana kwechigadzirwa.

Kuti uwedzere kuwedzera silicon vapor corrosion resistance yeC/ C-sic composite insulation chubhu, vaongorori vakaisa yakagadzirwa C/ C-sic composite insulation chubhu zvigadzirwa muchoto chemakemikari vapor reaction, uye vakagadzira dense silicon carbide coating pa. pamusoro peiyo C/ C-sic composite insulation chubhu zvigadzirwa nemakemikari vapor deposition process. Mhedzisiro yacho inoratidza kuti, Iyo nzira inogona kunyatso kuvharira kukora kwekabhoni faibha papakati peC/ C-sic inoumbwa nesilicon vapor, uye kushorwa kwesilicon vapor kunowedzerwa ne5 kusvika ka10 kana zvichienzaniswa nekabhoni / kabhoni inoumbwa, uye hupenyu hwebasa rekudzivirira cylinder uye kuchengetedzwa kwenzvimbo yemhepo inopisa inovandudzwa zvikuru.

2.Mhedziso uye tarisiro

Silicon carbide coatingInonyanya kushandiswa zvakanyanya mucarbon/carbon thermal field materials nekuda kwekunaka kwayo oxidation kuramba pakupisa kwepamusoro. Nekukura kuri kuwedzera kwekabhoni/carbon thermal field zvinhu zvinoshandiswa mukugadzira monocrystalline silicon, maitiro ekuvandudza kufanana kwesilicon carbide coating pamusoro pezvinhu zvinopisa zvemunda uye kuvandudza hupenyu hwesevhisi kabhoni/carbon thermal field materials rave dambudziko rekukurumidzira. kuti igadziriswe.

Kune rimwe divi, nekuvandudzwa kweiyo monocrystalline silicon indasitiri, kudiwa kwepamusoro-kuchena kabhoni/carbon thermal field materials kuri kuwedzerawo, uye maSiC nanofibers anorimwawo pamukati kabhoni fibers panguva yekuita. Iyo yakawanda ablation uye mutsara ablation mazinga eC/ C-ZRC uye C/ C-sic ZrC macomposites akagadzirwa nemiedzo ndeye -0.32 mg/s uye 2.57μm/s, zvichiteerana. Huremu uye mutsara wekubvisa mitengo yeC/ C-sic -ZrC maumbirwo ari -0.24mg/s uye 1.66μm/s, zvichiteerana. Iyo C/ C-ZRC inosanganiswa neSiC nanofibers ine zvirinani ablative zvivakwa. Gare gare, mhedzisiro yeakasiyana kabhoni masosi pakukura kweSiC nanofibers uye mashandiro eSiC nanofibers anosimbisa ablative zvimiro zveC/C-ZRC macomposites achadzidzwa.

Iyo inosanganiswa yekuputira kabhoni / kabhoni inoumbwa crucible yakagadzirwa nemakemikari vapor permeation process uye in-situ reaction. Iyo yakasanganiswa yekupfeka yaive yakagadzirwa nesilicon carbide coating (100 ~ 300μm), silicon coating (10 ~ 20μm) uye silicon nitride coating (50 ~ 100μm), iyo inogona kunyatso kuvharidzira kukora kwesilicon mhute mukati mepamusoro pekabhoni / kabhoni inoumba crucible. Mukugadzira, kurasikirwa kweiyo composite yakavharwa kabhoni / kabhoni composite crucible ndeye 0.04 mm pachoto, uye hupenyu hwesevhisi hunogona kusvika zana nemakumi masere evira.


Nguva yekutumira: Feb-22-2024
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