Folasaga i le lona tolu o augatupulaga semiconductor GaN ma fesoʻotaʻiga epitaxial tekinolosi

1. Semiconductor tupulaga lona tolu

O le tekonolosi semiconductor muamua na fausia e faʻavae i luga o mea semiconductor e pei o Si ma Ge. O le faʻavae faʻavae mo le atinaʻeina o transistors ma fesoʻotaʻiga fesoʻotaʻiga tekonolosi. O mea muamua a le semiconductor na faʻavaeina le faʻavae mo le eletise eletise i le 20th seneturi ma o mea autu ia mo tekinolosi faʻatasi.

O meafaitino semiconductor lona lua e aofia ai le gallium arsenide, indium phosphide, gallium phosphide, indium arsenide, alumini arsenide ma a latou mea faʻapipiʻi. O mea faʻapipiʻi semiconductor-tupulaga lona lua o le faʻavae lea o faʻamatalaga faʻamatalaga optoelectronic. I luga o lenei faʻavae, o pisinisi faʻapitoa e pei o moli, faʻaaliga, laser, ma photovoltaics ua atiaʻe. O loʻo faʻaaogaina lautele i faʻamatalaga faʻamatalaga faʻaonapo nei ma pisinisi faʻaalia optoelectronic.

O mea fa'atusa o mea fa'aoga semiconductor lona tolu e aofia ai le gallium nitride ma le silicon carbide. Ona o lo latou va lautele, o le maualuga o le saosaoa o le eletise, maualuga le vevela, ma le maualuga o le malosi o le fanua, o mea lelei ia mo le sauniaina o le eletise maualuga, maualuga, ma le maualalo o masini eletise. Faatasi ai ma i latou, o masini eletise silicon carbide o loʻo i ai le lelei o le maualuga o le malosi o le malosi, maualalo le faʻaaogaina o le malosi, ma le laʻititi laʻititi, ma e iai faʻamoemoega faʻaoga lautele i taavale fou malosi, photovoltaics, felauaiga nofoaafi, faʻamatalaga tetele, ma isi fanua. Gallium nitride RF masini o loʻo i ai le lelei o le tele o taimi, maualuga le malosi, lautele bandwidth, maualalo le mana faʻaaogaina ma laʻititi laʻititi, ma e iai faʻamatalaga lautele faʻamoemoega i fesoʻotaʻiga 5G, Initaneti o Mea, radar militeri ma isi fanua. E le gata i lea, o masini eletise faʻavae gallium nitride ua faʻaaogaina lautele i le fanua maualalo-voltage. E le gata i lea, i tausaga talu ai nei, o mea faʻapitoa o le gallium oxide e faʻamoemoeina e faʻapipiʻi faʻapitoa faʻatasi ma tekinolosi SiC ma GaN o iai, ma maua ai faʻamoemoega faʻaogaina i fanua maualalo ma maualuga-voltage.

Pe a faʻatusatusa i mea faʻapipiʻi lona lua, o mea faʻapipiʻi semiconductor lona tolu o loʻo i ai le lautele lautele o le bandgap (o le bandgap width o Si, o se mea masani o le muamua-generation material semiconductor, e tusa ma le 1.1eV, le bandgap lautele o GaAs, o se masani masani. mea o le meafaitino semiconductor-tupulaga lona lua, e tusa ma le 1.42eV, ma le lautele gap o GaN, o se mea masani o le tolu-tupulaga semiconductor material, e i luga aʻe o le 2.3eV), sili atu le malosi o le faʻavevelaina o le vevela, malosi le tetee atu i le malepelepe eletise, ma le maualuga o le vevela. O mea semiconductor lona tolu-tupulaga faʻatasi ai ma le lautele lautele o le bandgap lautele e sili ona talafeagai mo le gaosiga o le faʻasaʻoina o le radiation-resistant, high-frequency, high-power and high-integration-density electronic device. O a latou faʻaoga i masini faʻapipiʻi leitio microwave, LED, lasers, masini eletise ma isi matāʻupu ua tosina atu i ai le tele o le gauai, ma ua latou faʻaalia le lautele o le atinaʻeina o faʻamoemoega i fesoʻotaʻiga feaveaʻi, smart grids, nofoaafi feʻaveaʻi, taavale malosi fou, eletise faʻatau, ma le ultraviolet ma le lanumoana. -meamea moli lanu meamata [1].