Sic coating ni iki? - VET ENERGY

Silicon Carbideni uruganda rukomeye rurimo silikoni na karubone, kandi iboneka muri kamere nka minisite idasanzwe ya minisite. Silicon karbide ibice bishobora guhuzwa hamwe no gucumura kugirango bibumbwe mubutaka bukomeye cyane, bukoreshwa cyane mubisabwa bisaba kuramba cyane, cyane cyane mukigenda cya semiconductor.

Imiterere ifatika ya SiC

Ni iki?

Ipfundikizo ya SiC ni karbide yuzuye ya silikoni irwanya kwambara hamwe na ruswa nyinshi kandi irwanya ubushyuhe hamwe nubushuhe buhebuje. Ipfunyika ryinshi rya SiC rikoreshwa cyane cyane munganda za semiconductor na electronics kugirango zirinde abatwara wafer, shingiro nibintu bishyushya ibintu bitangirika kandi byangiza. Ipfunyika rya SiC irakwiriye kandi ku itanura rya vacuum no gushyushya icyitegererezo muri vacuum nyinshi, reaction na ogisijeni.

Ubuso buhanitse bwa SiC

Ni ubuhe buryo bwo gutwikira SiC?

Agace gato ka karubide ya silicon ishyirwa hejuru ya substrate ukoreshejeCVD (Kubika imyuka ya chimique). Ubusanzwe kubitsa bikorwa mubushyuhe bwa 1200-1300 ° C kandi imyitwarire yo kwagura ubushyuhe bwibikoresho bya substrate igomba guhuzwa nigitambaro cya SiC kugirango igabanye ubushyuhe bwumuriro.

CVD SIC Coating FILM INYIGISHO ZA CRYSTAL

Imiterere yumubiri ya SiC igaragara cyane cyane mubushyuhe bwayo bwo hejuru, ubukana, kurwanya ruswa hamwe nubushyuhe bwumuriro.

Ibipimo bisanzwe bifatika ni nkibi bikurikira:

Gukomera: Ububiko bwa SiC mubusanzwe bufite ubukana bwa Vickers murwego rwa 2000-2500 HV, bubaha kwambara cyane no kurwanya ingaruka mubikorwa byinganda.

Ubucucike: Ububiko bwa SiC mubusanzwe bufite ubucucike bwa 3.1-3.2 g / cm³. Ubucucike buri hejuru bugira uruhare mubukanishi no kuramba.

Amashanyarazi: Ipfunyika ya SiC ifite ubushyuhe bwinshi bwo hejuru, mubusanzwe buri hagati ya 120-200 W / mK (kuri 20 ° C). Ibi biratanga ubushyuhe bwiza bwubushyuhe bwo hejuru kandi bigatuma bikenerwa cyane cyane kubikoresho byo gutunganya ubushyuhe mu nganda zikoresha igice.

Ingingo yo gushonga: karbide ya silicon ifite aho ishonga igera kuri 2730 ° C kandi ifite ubushyuhe buhebuje bwubushyuhe bukabije.

Coefficient yo Kwagura Ubushyuhe: Ipitingi ya SiC ifite coeffisiyeti ntoya yo kwagura ubushyuhe (CTE), mubisanzwe murwego rwa 4.0-4.5 µm / mK (muri 25-1000 ℃). Ibi bivuze ko ituze ryayo ari ryiza hejuru yubushyuhe butandukanye.

Kurwanya ruswa: Ipitingi ya SiC irwanya cyane kwangirika muri aside ikomeye, alkali na okiside, cyane cyane iyo ukoresheje acide ikomeye (nka HF cyangwa HCl), kurwanya kwangirika kwabo kurenze kure cyane ibyuma bisanzwe.

Ibikoresho bya SiC birashobora gukoreshwa mubikoresho bikurikira:

Isuku ryinshi rya isostatike (CTE yo hasi)
Tungsten
Molybdenum
Silicon Carbide
Silicon Nitride
Ibikoresho bya Carbone-Carbone (CFC)

Ibicuruzwa bitwikiriye SiC bikoreshwa cyane mubice bikurikira:

LED itanga umusaruro
Umusaruro wa polysilicon
Amashanyarazigukura kwa kirisiti
Silicon naIndwara ya SiC
Kuvura ubushyuhe bwa Wafer no kuroba

Kuki uhitamo ingufu za VET?

VET Ingufu nu ruganda ruza ku isonga, guhanga udushya no kuyobora ibicuruzwa bitwikiriye SiC mu Bushinwa, ibicuruzwa nyamukuru bitwikiriye SiC birimoumutwara wafer hamwe na SiC, SiCepitaxial susceptor, SiC yashushanyije impeta ya grafite, Igice cy'ukwezi igice hamwe na SiC, SiC yatwikiriye karubone-karubone, SiC yatwikiriye ubwato bwa wafer, Ubushyuhe bwa SiC, n'ibindi. Dutegereje tubikuye ku mutima kuba umufatanyabikorwa wawe w'igihe kirekire mu Bushinwa.

Niba ufite ibibazo cyangwa ukeneye ibisobanuro birambuye, nyamuneka ntutindiganye kutwandikira.

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