Ingorane za tekiniki muburyo butanga umusaruro mwinshi wa silicon karbide wafers hamwe nibikorwa bihamye harimo:
1) Kubera ko kristu igomba gukura ahantu hafite ubushyuhe bwo hejuru hejuru ya 2000 ° C, ibisabwa byo kugenzura ubushyuhe biri hejuru cyane;
) inzira yo gukura. Ibipimo nkumuvuduko numuvuduko wumwuka;
3) Muburyo bwo kohereza ibyuka byumuyaga, tekinoroji yo kwagura diameter ya silicon karbide gukura kwa kirisiti iragoye cyane;
4) Ubukomezi bwa karbide ya silicon yegereye iya diyama, kandi gukata, gusya, no gusya biragoye.
SiC epitaxial wafers: ubusanzwe ikorwa nuburyo bwo guhumeka imyuka (CVD). Ukurikije ubwoko butandukanye bwa doping, bagabanijwemo n-ubwoko na p-epitaxial wafers. Imbere mu Gihugu Hantian Tiancheng na Dongguan Tianyu barashobora gutanga wafers ya santimetero 4/6-ya SiC epitaxial. Kuri epitaxy ya SiC, biragoye kugenzura mumashanyarazi menshi, kandi ubwiza bwa epitaxy ya SiC bugira ingaruka zikomeye kubikoresho bya SiC. Byongeye kandi, ibikoresho bya epitaxial byihariwe n’amasosiyete ane akomeye mu nganda: Axitron, LPE, TEL na Nuflare.
Silicon carbide epitaxialwafer bivuga wafer ya silicon karbide aho firime imwe ya kirisiti (epitaxial layer) ifite ibisabwa bimwe kandi kimwe na kristu ya substrate ikura kumurongo wambere wa silicon karbide. Ubwiyongere bwa Epitaxial bukoresha cyane cyane ibikoresho bya CVD (Depical Chemical Vapor Deposition,) cyangwa ibikoresho bya MBE (Molecular Beam Epitaxy). Kubera ko ibikoresho bya kariside ya silikoni bikozwe muburyo butaziguye, ubwiza bwigice cya epitaxial bugira ingaruka ku mikorere n’umusaruro wigikoresho. Mugihe imbaraga za voltage zihanganira imikorere yibikoresho bikomeje kwiyongera, ubunini bwurwego rujyanye na epitaxial bugenda bwiyongera kandi kugenzura bikagorana.Muri rusange, iyo voltage iri hafi 600V, uburebure bwa epitaxial bukenewe ni microni 6; iyo voltage iri hagati ya 1200-1700V, uburebure bukenewe bwa epitaxial igera kuri microne 10-15. Niba voltage igeze kuri volt zirenga 10,000, hashobora gukenerwa uburebure bwa epitaxial ya metero zirenga 100. Mugihe umubyimba wigice cya epitaxial ukomeje kwiyongera, biragenda bigorana kugenzura ubugari nuburinganire hamwe nubucucike.
Ibikoresho bya SiC: Ku rwego mpuzamahanga, 600 ~ 1700V SiC SBD na MOSFET byakozwe mu nganda. Ibicuruzwa byingenzi bikora kurwego rwa voltage munsi ya 1200V kandi cyane cyane bigakoreshwa mubipfunyika. Ku bijyanye n’ibiciro, ibicuruzwa bya SiC ku isoko mpuzamahanga bigurwa inshuro zigera kuri 5-6 ugereranije na Si bagenzi babo. Nyamara, ibiciro biragabanuka ku gipimo cya buri mwaka cya 10%. hamwe no kwagura ibikoresho byo hejuru no gukora ibikoresho mumyaka 2-3 iri imbere, isoko ryiyongera, bigatuma ibiciro bigabanuka. Biteganijwe ko mugihe igiciro kigeze inshuro 2-3 kubicuruzwa bya Si, ibyiza bizanwa no kugabanya ibiciro bya sisitemu no kunoza imikorere bizagenda buhoro buhoro SiC ifata umwanya w isoko ryibikoresho bya Si.
Gupakira gakondo bishingiye kubutaka bwa silicon, mugihe ibikoresho bya semiconductor yo mu gisekuru cya gatatu bisaba igishushanyo gishya rwose. Gukoresha ibikoresho bya silikoni gakondo bipfunyika kubikoresho bigari byamashanyarazi birashobora gutangiza ibibazo bishya nibibazo bijyanye numurongo, imicungire yumuriro, no kwizerwa. Ibikoresho byamashanyarazi bya SiC byumva cyane ubushobozi bwa parasitike na inductance. Ugereranije nibikoresho bya Si, amashanyarazi ya SiC afite umuvuduko wo guhinduranya byihuse, bishobora kuganisha hejuru cyane, kunyeganyega, kongera igihombo cyo guhinduranya, ndetse no gukora nabi ibikoresho. Byongeye kandi, ibikoresho byamashanyarazi bya SiC bikora ku bushyuhe bwo hejuru, bisaba ubuhanga buhanitse bwo gucunga ubushyuhe.
Inzego zinyuranye zatejwe imbere murwego rwo kwaguka kwagutse ya semiconductor yamashanyarazi. Gakondo ya Si ishingiye kumashanyarazi module ntagikwiye. Kugirango ukemure ibibazo byimiterere ya parasitike yo hejuru hamwe nubushuhe buke bwo gukwirakwiza ubushyuhe bwa gakondo bwa Si bushingiye kumashanyarazi, ibikoresho bya SiC power module bifata imiyoboro idafite imiyoboro hamwe na tekinoroji yo gukonjesha impande zombi muburyo bwayo, kandi ikanakoresha ibikoresho bya substrate hamwe nubushyuhe bwiza. ubworoherane, kandi wagerageje guhuza ubushobozi bwa decoupling capacator, ubushyuhe / ibyuma byubu, hamwe no gutwara imizunguruko muburyo bwa module, kandi byateje imbere uburyo butandukanye bwo gupakira module. Byongeye kandi, hari inzitizi zikomeye za tekinike zibangamira ibikoresho bya SiC kandi ibiciro byo gukora ni byinshi.
Ibikoresho bya karibide ya silicon ikorwa mugushyira epitaxial layer kuri silicon karbide substrate ikoresheje CVD. Inzira ikubiyemo isuku, okiside, fotolithographe, kurigata, kwiyambura fotoreziste, gushiramo ion, imyuka ya chimique ya nitride ya silicon, polishing, sputter, hamwe nintambwe yo gutunganya kugirango habeho imiterere yibikoresho kuri SiC imwe ya kristu. Ubwoko bwibanze bwibikoresho byamashanyarazi bya SiC harimo diode ya SiC, transistor ya SiC, hamwe na moderi ya power ya SiC. Bitewe nibintu nko gutinda kwihuta ryibikoresho byumuvuduko nigipimo cyumusaruro muke, ibikoresho bya karubide ya silicon bifite igiciro kinini cyo gukora.
Mubyongeyeho, gukora ibikoresho bya silicon carbide gukora bifite ibibazo bya tekiniki:
1) Birakenewe gutezimbere inzira yihariye ijyanye nibiranga ibikoresho bya karubide ya silicon. Kurugero: SiC ifite aho ishonga cyane, ituma ikwirakwizwa ryumuriro gakondo ridakora neza. Birakenewe gukoresha uburyo bwa doping bwa ion implantation no kugenzura neza ibipimo nkubushyuhe, igipimo cyo gushyushya, igihe bimara, na gazi itemba; SiC inert kumashanyarazi. Uburyo nkibishishwa byumye bigomba gukoreshwa, kandi ibikoresho bya mask, imvange ya gaze, kugenzura ahahanamye kumuhanda, igipimo cyo gutembera, gukomera kwinzira, nibindi bigomba kunozwa no gutezwa imbere;
2) Gukora ibyuma bya electrode yicyuma kuri silicon karbide wafers bisaba kurwanya munsi ya 10-5Ω2. Ibikoresho bya electrode byujuje ibisabwa, Ni na Al, bifite ubushyuhe buke buri hejuru ya 100 ° C, ariko Al / Ni ifite ubushyuhe bwiza. Guhuza byihariye birwanya / W / Au ibikoresho bya electrode yibikoresho ni 10-3Ω2 hejuru;
3) SiC ifite imyenda yo gukata cyane, kandi ubukana bwa SiC ni ubwa kabiri nyuma ya diyama, itanga ibisabwa cyane mugukata, gusya, gusya hamwe nubundi buryo bwikoranabuhanga.
Byongeye kandi, trench silicon carbide ibikoresho byamashanyarazi biragoye kuyikora. Ukurikije ibikoresho bitandukanye, ibikoresho bya ingufu za silicon karbide birashobora kugabanywa cyane mubikoresho bya planari nibikoresho byo mu mwobo. Ibikoresho bya planar silicon karbide bifite ingufu zingirakamaro hamwe nuburyo bworoshye bwo gukora, ariko bikunda ingaruka za JFET kandi bifite ubushobozi bwa parasitike nyinshi kandi birwanya leta. Ugereranije nibikoresho bya planari, trench silicon carbide ibikoresho byamashanyarazi bifite ibice byo hasi bihoraho kandi bifite uburyo bukomeye bwo gukora. Nyamara, imiterere yumwobo ifasha kongera ubwinshi bwibikoresho kandi ntibishobora gutanga umusaruro wa JFET, ifasha mugukemura ikibazo cyimikorere yimiyoboro. Ifite ibintu byiza nkibintu bito bito-birwanya, ubushobozi bwa parasitike ntoya, hamwe ningufu zikoreshwa nke. Ifite ikiguzi kinini nibikorwa byiza kandi byahindutse icyerekezo nyamukuru cyiterambere ryibikoresho byamashanyarazi ya silicon. Nk’uko urubuga rwemewe rwa Rohm rubitangaza, imiterere ya ROHM Gen3 (Imiterere ya Gen1 Trench) ni 75% gusa y’akarere ka chip ya Gen2 (Plannar2), naho imiterere ya ROHM Gen3 yo kurwanya igabanukaho 50% mu bunini bwa chip.
Silicon karbide substrate, epitaxy, imbere-impera, R&D amafaranga hamwe nibindi bingana na 47%, 23%, 19%, 6% na 5% byigiciro cyo gukora ibikoresho bya karubide ya silicon.
Hanyuma, tuzibanda ku guca inzitizi tekinike ya substrate murwego rwa silicon carbide inganda.
Ibikorwa byo gukora silicon karbide substrate isa niy'ibikoresho bya silicon, ariko biragoye.
Igikorwa cyo gukora silicon karbide substrate muri rusange harimo synthesis yibikoresho fatizo, gukura kwa kirisiti, gutunganya ingot, gukata ingot, gusya wafer, gusya, gusukura nandi masano.
Intambwe yo gukura ya kristu niyo ntandaro yimikorere yose, kandi iyi ntambwe igena imiterere yamashanyarazi ya silicon karbide substrate.
Ibikoresho bya karibide ya silicon biragoye gukura mugice cyamazi mubihe bisanzwe. Uburyo bwo gukura bwumuyaga wamamaye kumasoko uyumunsi ufite ubushyuhe bwo gukura hejuru ya 2300 ° C kandi bisaba kugenzura neza ubushyuhe bwikura. Ibikorwa byose biragoye kubyitegereza. Ikosa rito rizaganisha ku gusiba ibicuruzwa. Mugereranije, ibikoresho bya silicon bisaba 1600 ℃, biri hasi cyane. Gutegura silicon karbide substrate nayo ihura ningorane nko gukura buhoro buhoro hamwe nibisabwa hejuru ya kirisiti. Gukura kwa karibide ya wafer bifata iminsi 7 kugeza 10, mugihe inkoni ya silikoni ikurura ifata iminsi 2 nigice gusa. Byongeye kandi, karbide ya silicon nikintu gifite ubukana bwa kabiri nyuma ya diyama. Bizatakaza byinshi mugihe cyo gukata, gusya, no gusya, kandi igipimo gisohoka ni 60% gusa.
Turabizi ko icyerekezo ari ukongera ubunini bwa karubide ya silicon karbide, uko ubunini bukomeza kwiyongera, ibisabwa muburyo bwo kwagura diameter bigenda byiyongera. Irasaba guhuza ibintu bitandukanye bigenzura tekinike kugirango igere ku gukura gukabije kwa kristu.
Igihe cyo kohereza: Gicurasi-22-2024