Igisekuru cya mbere cyibikoresho bya semiconductor bigereranwa na silikoni gakondo (Si) na germanium (Ge), aribyo shingiro ryinganda zuzuzanya. Zikoreshwa cyane mumashanyarazi make, yumurongo muke, hamwe na tristoriste nkeya na detector. Ibice birenga 90% byibicuruzwa byifashishwa bikozwe mubikoresho bishingiye kuri silikoni;
Igisekuru cya kabiri ibikoresho bya semiconductor bigereranwa na gallium arsenide (GaAs), indium fosifide (InP) na gallium fosifide (GaP). Ugereranije nibikoresho bishingiye kuri silikoni, bifite imiterere-yihuta kandi yihuta ya optoelectronic kandi ikoreshwa cyane mubice bya optoelectronics na microelectronics. ;
Igisekuru cya gatatu cyibikoresho bya semiconductor bigaragazwa nibikoresho bigenda bigaragara nka karubide ya silicon (SiC), nitride ya gallium (GaN), okiside ya zinc (ZnO), diyama (C), na nitride ya aluminium (AlN).
Carbideni ibikoresho byingenzi byiterambere byiterambere rya generation ya gatatu yinganda. Ibikoresho bya Silicon karbide birashobora guhura neza nubushobozi buhanitse, miniaturizasi hamwe nibisabwa byoroheje bya sisitemu ya elegitoroniki hamwe nimbaraga zabo nziza cyane, birwanya ubushyuhe bwinshi, gutakaza bike nibindi bintu.
Kubera imiterere yumubiri isumba iyindi: icyuho kinini cyumurongo (uhuye numuriro mwinshi wamashanyarazi nubucucike bukabije), amashanyarazi menshi, hamwe nubushyuhe bwinshi, byitezwe ko bizahinduka ibikoresho byibanze bikoreshwa mugukora ibyuma bya semiconductor mugihe kizaza . Cyane cyane mubice byimodoka nshya zingufu, kubyara amashanyarazi, amashanyarazi, gari ya moshi, imiyoboro yubwenge nizindi nzego, ifite ibyiza bigaragara.
Ibikorwa bya SiC bigabanijwemo intambwe eshatu zingenzi: Gukura kwa kristu imwe ya kristu, gukura kwa epitaxial layer no gukora ibikoresho, ibyo bikaba bihuye n’ibice bine byingenzi bigize urwego rwinganda:substrate, epitaxy, ibikoresho na module.
Uburyo bukuru bwo gukora insimburangingo ibanza gukoresha uburyo bwo guhumeka imyuka yumubiri kugirango igabanye ifu ahantu h’ubushyuhe bwo hejuru cyane, kandi ikure kristu ya kariside ya kariside hejuru yimbuto ya kirisiti binyuze mu kugenzura umurima w'ubushyuhe. Gukoresha silicon karbide wafer nka substrate, imyuka ya pompe ikoreshwa mukubika igipande cya kirisiti imwe kuri wafer kugirango ikore wafer epitaxial. Muri byo, gukura karibide ya silicon epitaxial layer kuri substrate ya silicon carbide substrate irashobora gukorwa mubikoresho byamashanyarazi, bikoreshwa cyane cyane mumashanyarazi, amashanyarazi hamwe nizindi nzego; gukura gallium nitride epitaxial layer kuri kimwe cya kabirisilicon karbide substrateirashobora gukomeza gukorwa mubikoresho bya radio yumurongo, ikoreshwa mumatumanaho ya 5G nizindi nzego.
Kugeza ubu, insimburangingo ya silikoni ifite inzitizi zo mu rwego rwo hejuru mu rwego rwa tekinike ya karubide ya silicon, naho insimburangingo ya silicon ni yo igoye kubyara umusaruro.
Ikibazo cyo kubyaza umusaruro SiC nticyakemuwe burundu, kandi ubwiza bwibikoresho fatizo byibanze bya kristu ntibihinduka kandi hari ikibazo cyumusaruro, biganisha ku giciro kinini cyibikoresho bya SiC. Bifata impuzandengo yiminsi 3 kugirango ibikoresho bya silikoni bikure mu nkoni ya kirisiti, ariko bifata icyumweru kugirango silikoni ya karbide ikoreshwe. Inkoni rusange ya silikoni isanzwe ishobora gukura 200cm z'uburebure, ariko inkoni ya kariside ya silikoni irashobora gukura 2cm z'uburebure. Byongeye kandi, SiC ubwayo nigikoresho gikomeye kandi cyoroshye, kandi waferi ikozwemo ikunda gukata mugihe ukoresheje imashini gakondo yo gukata imashini ya wafer, bigira ingaruka kumusaruro no kwizerwa. SiC insimburangingo iratandukanye cyane nibisanzwe bya silicon, kandi ibintu byose uhereye kubikoresho, inzira, gutunganya kugeza gukata bigomba gutezwa imbere kugirango bikore karbide ya silicon.
Uruganda rwa silicon karbide rugabanijwemo ibice bine byingenzi: substrate, epitaxy, ibikoresho nibisabwa. Ibikoresho bya substrate nibyo shingiro ryuruhererekane rwinganda, ibikoresho bya epitaxial nurufunguzo rwo gukora ibikoresho, ibikoresho nibyo shingiro ryurwego rwinganda, kandi gusaba ni imbaraga ziterambere ryinganda. Inganda zo hejuru zikoresha ibikoresho fatizo kugirango zikore ibikoresho byubutaka binyuze muburyo bwo guhumeka kwimyuka nubundi buryo, hanyuma ikoresha uburyo bwo kubika imyuka nubundi buryo bwo gukura ibikoresho bya epitaxial. Inganda zo hagati zikoresha ibikoresho byo hejuru kugirango bikore ibikoresho bya radiyo yumurongo wa radiyo, ibikoresho byamashanyarazi nibindi bikoresho, amaherezo bikoreshwa muburyo bwitumanaho rya 5G. , ibinyabiziga byamashanyarazi, inzira ya gari ya moshi, nibindi. Muri byo, substrate na epitaxy bingana na 60% yikiguzi cyurwego rwinganda kandi nigiciro cyingenzi cyurwego rwinganda.
SiC substrate: Kirisiti ya SiC mubusanzwe ikorwa hakoreshejwe uburyo bwa Lely. Ibicuruzwa mpuzamahanga byingenzi bigenda biva kuri santimetero 4 bikagera kuri santimetero 6, kandi ibicuruzwa byifashishwa bya santimetero 8 byateguwe. Inzira zo murugo zifite santimetero 4. Kubera ko imirongo isanzwe ya 6-silicon wafer itanga umusaruro irashobora kuzamurwa no guhindurwa kugirango ikore ibikoresho bya SiC, umugabane munini wamasoko ya santimetero 6 za SiC uzakomeza kubikwa igihe kirekire.
Silicon carbide substrate inzira iragoye kandi iragoye kubyara. Silicon carbide substrate ni icyegeranyo cya semiconductor kimwe kristaliste igizwe nibintu bibiri: karubone na silikoni. Kugeza ubu, inganda zikoresha cyane ifu ya karubone ifite isuku nini nifu ya silikoni nziza cyane nkibikoresho fatizo byo guhuza ifu ya karubide ya silicon. Munsi yubushyuhe budasanzwe, uburyo bwo gukwirakwiza imyuka ikuze (uburyo bwa PVT) bukoreshwa mugukura karbide ya silicon yubunini butandukanye mumatanura yo gukura. Ingoro ya kirisiti irangije gutunganywa, gukata, hasi, gusukurwa, gusukurwa nibindi bikorwa byinshi kugirango habeho karubide ya silicon.
Igihe cyo kohereza: Gicurasi-22-2024