Ni izihe nenge za silicon karbide epitaxial layer

Tekinoroji yibanze yo gukura kwaSiC epitaxialibikoresho ni ubwambere tekinoroji yo kugenzura inenge, cyane cyane kubuhanga bwo kugenzura inenge ikunze kunanirwa ibikoresho cyangwa kwangirika kwizerwa. Ubushakashatsi bwuburyo bwimikorere ya substrate bugera mugice cya epitaxial mugihe cyo gukura kwa epitaxial, amategeko yo kwimura no guhindura inenge ku ntera iri hagati ya substrate na epitaxial, hamwe nuburyo bwa nucleation yinenge nizo shingiro ryo gusobanura isano iri hagati inenge ya substrate inenge na epitaxial inenge zubaka, zishobora kuyobora neza substrate yo kugenzura no gukora epitaxial inzira nziza.

Inenge zasilicon karbide epitaxial ibicebigabanijwe cyane mubyiciro bibiri: inenge ya kristu nubuso bwa morphologie. Inenge ya Crystal, harimo inenge yibintu, disikuru ya disikuru, inenge ya microtubule, kwimura inkombe, nibindi, ahanini bituruka ku nenge ziri kuri substrate ya SiC kandi ikwirakwira mubice bya epitaxial. Ubusembwa bwimiterere ya morfologiya burashobora kugaragara neza nijisho ryonyine ukoresheje microscope kandi bifite imiterere isanzwe ya morfologiya. Ubusembwa bwa morfologiya yubuso burimo cyane cyane: Igishushanyo, inenge ya mpandeshatu, inenge ya karoti, Kugwa, na Particle, nkuko bigaragara ku gishushanyo cya 4. Mugihe cyibikorwa bya epitaxial, uduce duto two mu mahanga, inenge ziterwa na substrate, kwangirika kwubutaka, hamwe no gutandukana kwa epitaxial byose bishobora kugira ingaruka kumurongo wintambwe zaho. uburyo bwo gukura, bivamo ubusembwa bwa morphologie.

Imbonerahamwe 1. Impamvu zitera inenge ya matrix isanzwe hamwe nubusembwa bwimiterere ya morfologiya mubice bya epitaxial SiC

 

Inenge

Inenge yibintu ikorwa nubusa cyangwa icyuho kumwanya umwe cyangwa ahantu henshi, kandi nta kwaguka kwagutse. Inenge yibintu irashobora kugaragara mubikorwa byose byakozwe, cyane cyane muguterwa ion. Ariko, biragoye kubimenya, kandi isano iri hagati yo guhindura inenge nizindi nenge nayo iragoye.

 

Micropipes (MP)

Micropipes ni disikuru zidafite imbaraga zikwirakwiza kumurongo wo gukura, hamwe na vector ya Burgers <0001>. Diameter ya microtubes itangirira ku gice cya micron kugeza kuri microni mirongo. Microtubes yerekana ibinini binini bisa nubuso hejuru yubuso bwa SiC. Mubisanzwe, ubucucike bwa microtubes bugera kuri 0.1 ~ 1cm-2 kandi bukomeje kugabanuka mugukurikirana ubuziranenge bwibicuruzwa bya wafer.

 

Gukuramo ibice (TSD) no gutandukana (TED)

Gusiba muri SiC nisoko nyamukuru yo kwangirika kwibikoresho no gutsindwa. Byombi byavanyweho (TSD) hamwe no gutandukana (TED) bigenda bikurikirana bikura, hamwe na Burgers vectors ya <0001> na 1/3 <11–20>.

Kwimura ibice byombi (TSD) hamwe no gutandukana (TED) birashobora kuva kuri substrate kugeza hejuru ya wafer hanyuma bikazana utuntu duto tumeze nk'uburinganire (Ishusho 4b). Mubisanzwe, ubucucike bwuruhererekane bwikubye inshuro 10 ubwinshi bwimurwa. Kwagura umugozi wagutse, ni ukuvuga, kuva kuri substrate kugera kuri epilayeri, birashobora kandi guhinduka mubindi bitagenda neza kandi bigakwirakwira kumikurire. MugiheSiC epitaxialgukura, gusibanganya screw bihindurwa muburyo bwo gutondeka (SF) cyangwa inenge ya karoti, mugihe gutandukana kwa epilayeri byerekanwe ko byahinduwe bivuye mubutaka bwibanze (BPDs) bwarazwe na substrate mugihe cyo gukura kwa epitaxial.

 

Gutandukanya indege shingiro (BPD)

Iherereye mu ndege y'ibanze ya SiC, hamwe na vector ya Burgers ya 1/3 <11–20>. BPDs gake igaragara hejuru ya wafers ya SiC. Mubisanzwe bibanda kuri substrate hamwe n'ubucucike bwa cm 1500-2, mugihe ubucucike bwabo muri epilayeri bugera kuri cm 10-2 gusa. Kumenya BPDs ukoresheje Photoluminescence (PL) yerekana umurongo ugaragara, nkuko bigaragara ku gishushanyo 4c. MugiheSiC epitaxialgukura, kwagura BPDs birashobora guhinduka muburyo bwo gutondeka amakosa (SF) cyangwa gutandukana (TED).

 

Gukurikirana amakosa (SFs)

Inenge muburyo bukurikirana bwindege ya SiC. Amakosa yo gutondeka arashobora kugaragara murwego rwa epitaxial kuragwa SFs muri substrate, cyangwa bifitanye isano no kwagura no guhindura indege yibanze (BPDs) hamwe no gutandukanya imigozi (TSDs). Mubisanzwe, ubucucike bwa SFs buri munsi ya cm 1-2, kandi bagaragaza ibimenyetso bya mpandeshatu iyo bigaragaye ukoresheje PL, nkuko bigaragara ku gishushanyo cya 4e. Nyamara, ubwoko butandukanye bwamakosa yo gutondeka burashobora gushingwa muri SiC, nkubwoko bwa Shockley nubwoko bwa Frank, kubera ko nubunini buke bwo guhagarika ingufu hagati yindege bishobora gukurura amakosa menshi muburyo bukurikirana.

 

Kugwa

Inenge yo kugwa ituruka ahanini kumatembabuzi yagabanutse kurukuta rwo hejuru no kuruhande rwurukuta rwa reaction mugihe cyikura, ibyo bikaba bishobora kunozwa mugutezimbere uburyo bwo gufata neza buri gihe ibyakoreshwaga na grafite ya grafite.

 

Inenge ya mpandeshatu

Ni 3C-SiC polytype irimo gushika hejuru yubuso bwa epilayeri ya SiC ukurikije icyerekezo cyindege ya basal, nkuko bigaragara ku gishushanyo cya 4g. Irashobora kubyara ibice bigwa hejuru yubuso bwa SiC mugihe cyo gukura kwa epitaxial. Ibice byinjijwe muri epilayeri kandi bikabangamira inzira yo gukura, bikavamo 3C-SiC polytype yinjizwamo, yerekana ubuso buringaniye bwa mpandeshatu buranga hamwe nuduce duherereye mu mpande z’akarere ka mpandeshatu. Ubushakashatsi bwinshi bwerekanye kandi inkomoko ya polytype yatewe no gushushanya hejuru, micropipes, hamwe nibipimo bidakwiye byiterambere.

 

Inenge ya karoti

Inenge ya karoti ni ikomatanyirizo ryikurikiranya rifite imitwe ibiri iherereye mu ndege ya TSD na SF basal indege ya kirisiti, ihagarikwa na dislokisiyo yo mu bwoko bwa Frank, kandi ingano yinenge ya karoti ifitanye isano na prismatic stacking amakosa. Ihuriro ryibi bintu bigize imiterere ya morfologiya yubusembwa bwa karoti, isa na karoti ifite ubucucike buri munsi ya cm 1 -2, nkuko bigaragara ku gishushanyo cya 4f. Inenge ya karoti ikorwa byoroshye mugushushanya, TSDs, cyangwa inenge ya substrate.

 

Igishushanyo

Igishushanyo ni ibyangiritse byububiko hejuru ya waferi ya SiC byakozwe mugihe cyibikorwa, nkuko bigaragara ku gishushanyo cya 4h. Igishushanyo kuri substrate ya SiC gishobora kubangamira imikurire ya epilayeri, bigatanga umurongo wo gutandukana cyane muri epilayeri, cyangwa ibishushanyo bishobora kuba ishingiro ryo gushiraho inenge za karoti. Kubwibyo, ni ngombwa guhanagura neza waferi ya SiC kuko ibishushanyo bishobora kugira ingaruka zikomeye kumikorere yibikoresho mugihe bigaragara mugace gakorera igikoresho.

 

Ubundi busembwa bwa morphologie

Gutera intambwe ni ubusembwa bwubuso bwakozwe mugihe cyo gukura kwa epitaxial ya SiC, itanga inyabutatu ya obtuse cyangwa trapezoidal yibiranga hejuru ya epilayeri ya SiC. Hariho ubundi busembwa bwinshi bwubuso, nkibyobo byo hejuru, ibibyimba nibirungo. Izi nenge ubusanzwe ziterwa nuburyo bwo gukura budakoreshejwe no gukuraho burundu ibyangiritse, bigira ingaruka mbi kumikorere yibikoresho.