Iminota itatu yo kwiga ibijyanye na karubide ya silicon (SIC)

Intangiriro yaSilicon Carbide

Carbide ya Silicon (SIC) ifite ubucucike bwa 3.2g / cm3. Carbide isanzwe ya silicon ni gake cyane kandi ikomatanyirizwa muburyo bwa artificiel. Ukurikije ibyiciro bitandukanye byuburyo bwa kristu, karbide ya silicon irashobora kugabanywamo ibyiciro bibiri: α SiC na β SiC. Igisekuru cya gatatu igice cya kabiri cyerekanwa na silicon karbide (SIC) gifite inshuro nyinshi, gukora neza, imbaraga nyinshi, kurwanya umuvuduko mwinshi, kurwanya ubushyuhe bwinshi no kurwanya imirasire ikomeye. Irakenewe mubyifuzo byingenzi byingenzi byo kubungabunga ingufu no kugabanya ibyuka bihumanya ikirere, gukora ubwenge no gucunga umutekano. Ni ugushyigikira udushya twigenga no kwiteza imbere no guhindura itumanaho rishya rya terefone igendanwa, ibinyabiziga bishya byingufu, gari ya moshi yihuta cyane, gari ya moshi n’inganda n’izindi nganda Ibikoresho by’ibanze byazamuwe hamwe n’ibikoresho bya elegitoronike byibanze ku ikoranabuhanga rya semiconductor ku isi no guhatanira inganda . Muri 2020, ubukungu n’ubucuruzi ku isi byose biri mu gihe cyo kuvugurura, kandi ibidukikije by’imbere n’imbere mu bukungu bw’Ubushinwa biragoye kandi birakomeye, ariko inganda za gatatu zikoresha imashanyarazi zikoreshwa mu isi ziragenda ziyongera bitewe n’iki cyerekezo. Birakenewe kumenyekana ko inganda za silicon karbide zinjiye mubyiciro bishya byiterambere.

CarbidePorogaramu

Amashanyarazi ya silicon mubikorwa bya semiconductor inganda silicon carbide semiconductor yinganda zirimo cyane cyane silicon karbide ifu yera cyane, ifu ya kirisiti imwe, epitaxial, ibikoresho byamashanyarazi, gupakira module hamwe no gukoresha terefone, nibindi

. Kugeza ubu, uburyo bwo gukura bwa SiC imwe ya kirisiti harimo ihererekanyabubasha rya gaze (PVT), icyiciro cyamazi (LPE), ubushyuhe bwo hejuru bwa chimique (htcvd) nibindi. 2. Epitaxial silicon carbide epitaxial urupapuro rwerekana gukura kwa firime imwe ya kirisiti (epitaxial layer) hamwe nibisabwa hamwe nicyerekezo kimwe na substrate. Mubikorwa bifatika, ibikoresho bigari bya semiconductor ibikoresho hafi ya byose biri murwego rwa epitaxial, kandi chipic carbide chip ubwayo ikoreshwa gusa nka substrate, harimo na Gan epitaxial.

3. Isuku ryinshiSiCifu nibikoresho fatizo byo gukura kwa silicon karbide kristu imwe muburyo bwa PVT. Ibicuruzwa byera bigira ingaruka zitaziguye kumiterere yiterambere no mumashanyarazi ya SiC kristu imwe.

4. Igikoresho cyamashanyarazi gikozwe muri karubide ya silicon, ifite ibimenyetso biranga ubushyuhe bwo hejuru, inshuro nyinshi kandi neza. Ukurikije uburyo bwakazi bwibikoresho,SiCibikoresho byamashanyarazi ahanini birimo ingufu za diode hamwe nimbaraga zo guhinduranya amashanyarazi.

5. Mu gisekuru cya gatatu igice cya kabiri cyogukoresha, ibyiza byo kurangiza gusaba ni uko bishobora kuzuza igice cya kabiri cya GaN. Bitewe nibyiza byo guhindura byinshi, ibiranga ubushyuhe buke nuburemere bwibikoresho bya SiC, icyifuzo cyinganda zo hasi zikomeje kwiyongera, gifite icyerekezo cyo gusimbuza ibikoresho bya SiO2. Ibihe byiterambere rya silicon karbide iterambere ryisoko rirakomeza gutera imbere. Silicon karbide iyobora igisekuru cya gatatu igice cya kabiri cyiterambere rya porogaramu. Igisekuru cya gatatu ibicuruzwa bya semiconductor byacengewe byihuse, imirima yo gusaba iraguka ubudahwema, kandi isoko riratera imbere byihuse hamwe niterambere rya elegitoroniki yimodoka, itumanaho rya 5g, amashanyarazi yihuta kandi akoreshwa mubisirikare. .