Uburyo butatu bwingenzi bwo gukura kwa kirisiti ya SiC

Nkuko bigaragara ku gishushanyo cya 3, hari uburyo butatu bwiganje bugamije gutanga SiC imwe ya kirisiti hamwe nubwiza buhebuje kandi bwiza: epitaxy fase epitaxy (LPE), gutwara imyuka yumubiri (PVT), hamwe nubushyuhe bwo hejuru bwa chimique (HTCVD). PVT ni inzira ihamye yo gukora SiC imwe ya kristu, ikoreshwa cyane mubakora inganda zikomeye.

Nyamara, inzira zose uko ari eshatu ziratera imbere byihuse kandi bishya. Ntibishoboka kwirinda inzira izakoreshwa cyane mugihe kizaza. By'umwihariko, sisitemu yo mu rwego rwohejuru ya SiC yakozwe no gukura kw'igisubizo ku kigero kinini byagaragaye mu myaka yashize, ubwiyongere bukabije bwa SiC mu cyiciro cy'amazi busaba ubushyuhe buke ugereranije n'ubwa sublimation cyangwa kubitsa, kandi bugaragaza ubuhanga mu gutanga P -ubwoko bwa SiC substrates (Imbonerahamwe 3) [33, 34].

Igishushanyo cya 3: Igishushanyo cyibintu bitatu byiganjemo SiC tekinike yo gukura: (a) epitaxy yicyiciro; (b) gutwara imyuka yumubiri; (c) imyuka yo mu kirere ifite ubushyuhe bwinshi

Imbonerahamwe 3: Kugereranya LPE, PVT na HTCVD yo gukura kristu imwe ya SiC [33, 34]

Gukura k'umuti ni tekinoroji isanzwe yo gutegura igice cya semiconductor [36]. Kuva mu myaka ya za 1960, abashakashatsi bagerageje gukora kristu mu gisubizo [37]. Ikoranabuhanga rimaze gutezwa imbere, supersaturation yubuso bwikura irashobora kugenzurwa neza, bigatuma uburyo bwo gukemura tekinoloji itanga ikizere cyo kubona ibikoresho byiza byo mu rwego rwo hejuru.

Kugirango habeho gukura kwa SiC kristu imwe, isoko ya Si ikomoka kuri Si gushonga cyane mugihe igishushanyo mbonera gikora ibintu bibiri: gushyushya na C isoko. Kirisiti imwe ya SiC irashobora gukura munsi yikigereranyo cyiza cya stoichiometric mugihe igipimo cya C na Si kiri hafi ya 1, byerekana ubucucike buke [28]. Nyamara, ku muvuduko w'ikirere, SiC yerekana ko idashonga kandi ikangirika mu buryo butaziguye bitewe n'ubushyuhe bwo mu kirere burenga hafi 2000 ° C. SiC ishonga, ukurikije ibyateganijwe, irashobora gukorwa gusa muburyo bugaragara uhereye ku gishushanyo mbonera cya Si-C (Ishusho ya 4) ko ukurikije ubushyuhe bwa gradient na sisitemu yo gukemura. Hejuru C muri Si gushonga biratandukanye kuva 1at.% Kugeza 13at.%. Gutwara C supersaturation, byihuse umuvuduko wubwiyongere, mugihe imbaraga nke za C zo gukura ari C supersaturation yiganjemo umuvuduko wa 109 Pa nubushyuhe buri hejuru ya 3,200 ° C. Irashobora kurenza urugero itanga ubuso bworoshye [22, 36-38] .ubushyuhe buri hagati ya 1,400 na 2.800 ° C, ubukonje bwa C mumashanyarazi ya Si buratandukanye kuva 1at.% Kugeza 13at.%. Imbaraga zo gukura ni C supersaturation yiganjemo ubushyuhe bwa gradient na sisitemu yo gukemura. Iyo hejuru ya C supersaturation, niko umuvuduko wihuta wihuta, mugihe C supersaturation nkeya itanga ubuso bworoshye [22, 36-38].

Igishushanyo 4: Igishushanyo mbonera cya Si-C [40]

Gukuraho ibyuma byinzibacyuho cyangwa ibintu bidasanzwe-isi ntibigabanya gusa ubushyuhe bwikura gusa ahubwo bisa nkuburyo bwonyine bwo kuzamura cyane imbaraga za karubone muri Si gushonga. Kwiyongera kwibyuma byamatsinda yinzibacyuho, nka Ti [8, 14-16, 19, 40-52], Cr [29, 30, 43, 50, 53-75], Co [63, 76], Fe [77- 80], nibindi cyangwa ibyuma bidasanzwe byisi, nka Ce [81], Y [82], Sc, nibindi kugeza kuri Si gushonga bituma imyuka ya karubone irenga 50at.% Muri leta yegereye iringaniza rya termodinamike. Byongeye kandi, tekinike ya LPE ni nziza kuri P-doping ya SiC, ishobora kugerwaho no guhuza Al muri
umusemburo [50, 53, 56, 59, 64, 71-73, 82, 83]. Ariko, kwinjizwa kwa Al biganisha ku kwiyongera kwurwanya imbaraga za P-SiC ya kristu imwe ya kristu imwe [49, 56] .Ku gice cyo gukura kwubwoko bwa N munsi ya doping ya azote,

ubwiyongere bwibisubizo muri rusange buturuka mu kirere cya inert. Nubwo helium (He) ihenze kuruta argon, itoneshwa nintiti nyinshi kubera ubukonje bwayo buke hamwe nubushyuhe bukabije bwumuriro (inshuro 8 za argon) [85]. Igipimo cyimuka hamwe na Cr biri muri 4H-SiC birasa munsi yikirere cya He na Ar, byaragaragaye ko gukura munsi ya Heresult kumuvuduko mwinshi kuruta gukura munsi yaAr bitewe nubushyuhe bukabije bwabafite imbuto [68]. Yabuza icyuho kiri imbere ya kirisiti ikuze na nucleation yihuse mu gisubizo, noneho, hashobora kuboneka morfologiya yubuso bworoshye [86].

Uru rupapuro rwerekanye iterambere, porogaramu, nimiterere yibikoresho bya SiC, hamwe nuburyo butatu bwingenzi bwo gukura SiC imwe rukumbi. Mu bice bikurikira, tekinoroji yo gukura yubu hamwe nibipimo byingenzi byasuzumwe. Hanyuma, hashyizweho icyerekezo cyaganiriye ku mbogamizi n'imirimo iri imbere bijyanye no gukura kwinshi kwa sisitemu imwe ya sisitemu hakoreshejwe uburyo bwo gukemura.