1. Igice cya gatatu-igice cya kabiri
Iyaruka rya mbere rya tekinoroji ya semiconductor yakozwe hifashishijwe ibikoresho bya semiconductor nka Si na Ge. Nibintu bifatika byiterambere rya transistors hamwe nikoranabuhanga ryuzuzanya. Igisekuru cya mbere ibikoresho bya semiconductor byashizeho urufatiro rwinganda za elegitoronike mu kinyejana cya 20 kandi nibikoresho byibanze byikoranabuhanga ryuzuzanya.
Igisekuru cya kabiri ibikoresho bya semiconductor birimo cyane cyane gallium arsenide, indium fosifide, gallium fosifide, indium arsenide, aluminium arsenide hamwe nibindi bintu bitatu. Igisekuru cya kabiri ibikoresho bya semiconductor nibyo shingiro ryinganda zamakuru ya optoelectronic. Hashingiwe kuri ibyo, inganda zijyanye no gucana, kwerekana, laser, na Photovoltaque zatejwe imbere. Zikoreshwa cyane mubuhanga bwikoranabuhanga bwamakuru hamwe ninganda zerekana optoelectronic.
Ibikoresho byerekana ibikoresho bya semiconductor yo mu gisekuru cya gatatu birimo gallium nitride na karubide ya silicon. Bitewe nubunini bwagutse, umuvuduko mwinshi wa elegitoronike umuvuduko mwinshi, umuvuduko mwinshi wumuriro, hamwe nimbaraga zo kumeneka mwinshi, nibikoresho byiza byo gutegura ingufu nyinshi, inshuro nyinshi, hamwe nibikoresho bya elegitoroniki bitakaza. Muri byo, ibikoresho bya ingufu za silicon karbide bifite ibyiza byo gukwirakwiza ingufu nyinshi, gukoresha ingufu nke, hamwe nubunini buto, kandi bifite amahirwe menshi yo gukoresha mumodoka nshya, ingufu za fotora, gutwara gari ya moshi, amakuru manini, nizindi nzego. Ibikoresho bya Gallium nitride RF bifite ibyiza byumuvuduko mwinshi, imbaraga nyinshi, umurongo mugari, gukoresha ingufu nkeya nubunini buto, kandi bifite amahirwe menshi yo gukoresha mubitumanaho 5G, interineti yibintu, radar ya gisirikare nizindi nzego. Mubyongeyeho, ibikoresho bya ingufu za gallium nitride byakoreshejwe cyane mumashanyarazi make. Byongeye kandi, mumyaka yashize, ibikoresho bya gallium oxyde biteganijwe ko byuzuzanya muburyo bwa tekiniki hamwe na tekinoroji ya SiC na GaN, kandi bifite amahirwe yo gukoreshwa mumashanyarazi make na voltage nyinshi.
Ugereranije nigisekuru cya kabiri ibikoresho bya semiconductor, ibikoresho bya semiconductor yo mu gisekuru cya gatatu bifite ubugari bwagutse bwagutse (ubugari bwa bandgap ya Si, ibikoresho bisanzwe byibikoresho bya semiconductor ya mbere, ni nka 1.1eV, ubugari bwa GaAs, bisanzwe ibikoresho byo mu gisekuru cya kabiri ibikoresho bya semiconductor, ni nka 1.42eV, kandi ubugari bwa bande ya GaN, ibintu bisanzwe byibikoresho bya semiconductor yo mu gisekuru cya gatatu, biri hejuru 2.3eV), kurwanya imishwarara ikomeye, kurwanya imbaraga zumuriro wamashanyarazi, hamwe nubushyuhe bwo hejuru. Igisekuru cya gatatu ibikoresho bya semiconductor bifite ubugari bwagutse burakwiriye cyane cyane kubyara imishwarara irwanya imirasire, inshuro nyinshi, imbaraga nyinshi hamwe n’ibikoresho bya elegitoroniki byuzuzanya. Porogaramu zabo mu bikoresho bya radiyo ya microwave, LED, laseri, ibikoresho byamashanyarazi nizindi nzego byakuruye abantu benshi, kandi berekanye iterambere ryagutse mu itumanaho rya terefone igendanwa, imiyoboro ya gari ya moshi, inzira ya gari ya moshi, ibinyabiziga bishya by’ingufu, ibikoresho bya elegitoroniki, na ultraviolet nubururu -icyatsi kibisi kibisi [1].
Inkomoko yishusho: CASA, Ikigo cyubushakashatsi bwa Zheshang
Igishushanyo 1 GaN igikoresho cyamashanyarazi igihe cyateganijwe
II GaN imiterere yibintu nibiranga
GaN ni bande ya semiconductor itaziguye. Ubugari bwa bandgap bwuburyo bwa wurtzite mubushyuhe bwicyumba ni 3.26eV. Ibikoresho bya GaN bifite ibyiciro bitatu byingenzi bya kristu, aribyo imiterere ya wurtzite, imiterere ya sphalerite nuburyo bwumunyu wamabuye. Muri byo, imiterere ya wurtzite nuburyo bukomeye bwa kristu. Igishushanyo 2 nigishushanyo mbonera cya wurtzite ya hexagonal ya GaN. Imiterere ya wurtzite yibikoresho bya GaN ni muburyo bwa mpande esheshatu zegeranye. Buri selile igizwe na atome 12, harimo 6 N atom na 6 Ga. Buri atom ya Ga (N) ikora umurongo hamwe na atome 4 zegeranye za N (Ga) kandi zishyizwe kumurongo wa ABABAB… ukurikije icyerekezo [0001] [2].
Igishushanyo 2 Imiterere ya Wurtzite GaN igishushanyo mbonera
III Bikunze gukoreshwa substrate ya GaN epitaxy
Birasa nkaho epitaxy ya homogeneous on GaN substrates aribwo buryo bwiza kuri epitaxy ya GaN. Nyamara, kubera ingufu nini za GaN, iyo ubushyuhe bugeze aho bushonga bwa 2500 ℃, umuvuduko wacyo wo kubora ni 4.5GPa. Iyo umuvuduko wo kubora uri munsi yuyu muvuduko, GaN ntishonga ariko ibora mu buryo butaziguye. Ibi bituma tekinoroji yo gutegura substrate ikuze nkuburyo bwa Czochralski budakwiriye gutegurwa GaN imwe ya kristal substrate, bigatuma insimburangingo ya GaN igora kubyara umusaruro kandi bihenze. Kubwibyo rero, insimburangingo zikoreshwa cyane mu mikurire ya GaN ni Si, SiC, safiro, nibindi [3].
Imbonerahamwe 3 GaN n'ibipimo byibikoresho bisanzwe bikoreshwa
GaN epitaxy kuri safiro
Safiro ifite imiti ihamye, ihendutse, kandi ifite ubukure bwinshi bwinganda nini nini. Kubwibyo, yabaye kimwe mubikoresho byambere kandi bikoreshwa cyane muri substrate ibikoresho byubuhanga bwa semiconductor. Nka kimwe mubisanzwe bikoreshwa muburyo bwa GaN epitaxy, ibibazo nyamukuru bigomba gukemurwa kubutaka bwa safiro ni:
✔ Bitewe na lattice nini idahuye hagati ya safiro (Al2O3) na GaN (hafi 15%), ubucucike bw'inenge kuri interineti hagati ya epitaxial layer na substrate ni ndende cyane. Kugirango ugabanye ingaruka mbi zayo, substrate igomba gukorerwa ibintu bitoroshye mbere yuko epitaxy itangira. Mbere yo gukura epitaxy ya GaN kuri safiro, hejuru yubutaka hagomba kubanza gusukurwa cyane kugirango ikureho umwanda, ibyangiritse byangiza, nibindi, kandi bitange intambwe nintambwe zubutaka. Hanyuma, substrate yubuso ni nitride kugirango ihindure ibintu bitose bya epitaxial layer. Hanyuma, urwego ruto rwa AlN (ubusanzwe rufite uburebure bwa 10-100nm) rugomba gushyirwa hejuru yubutaka hanyuma rugashyirwa mubushyuhe buke kugirango witegure gukura kwanyuma. Nubwo bimeze bityo, ubucucike bwa dislocation muri GaN epitaxial film bwakorewe kuri substrate ya safiro buracyari hejuru ugereranije na firime ya homoepitaxial (hafi 1010cm-2, ugereranije nubucucike bwa zeru muri firime ya silicon homoepitaxial cyangwa gallium arsenide homoepitaxial, cyangwa hagati ya 102 na 104cm- 2). Ubucucike buri hejuru bugabanya umuvuduko wabatwara, bityo bigabanya igihe gito cyabatwara ubuzima no kugabanya ubushyuhe bwumuriro, ibyo byose bizagabanya imikorere yibikoresho [4];
Eff Koeffisiyeti yo kwagura ubushyuhe bwa safiro iruta iya GaN, bityo guhangayikishwa na biaxial compressive bizabyara mugice cya epitaxial mugihe cyo gukonja kuva ubushyuhe bwashize kugeza ubushyuhe bwicyumba. Kuri firime zibyibushye cyane, iyi mihangayiko irashobora gutera gucika firime cyangwa na substrate;
Ugereranije nizindi nteruro, ubushyuhe bwumuriro wa safiro ni buke (hafi 0,25W * cm-1 * K-1 kuri 100 ℃), kandi imikorere yo gukwirakwiza ubushyuhe ni mibi;
✔ Bitewe nubushobozi buke bwayo, amabuye ya safiro ntabwo yorohereza kwishyira hamwe kwayo hamwe nibindi bikoresho bya semiconductor.
Nubwo ubucucike bwubusembwa bwa epitexial ya GaN bwakuze kumasaka ya safiro ni bwinshi, ntabwo bisa nkigabanya cyane imikorere ya optoelectronic ya GaN ishingiye kubururu-icyatsi kibisi LED, bityo insina za safiro ziracyakoreshwa muburyo bukoreshwa na LED ishingiye kuri GaN.
Hamwe niterambere ryibikorwa byinshi bishya byibikoresho bya GaN nka laseri cyangwa ibindi bikoresho bifite ingufu nyinshi cyane, inenge zisanzwe za safiro substrate zagiye ziba imbogamizi kubikorwa byabo. Byongeye kandi, hamwe niterambere ryiterambere rya tekinoroji ya SiC substrate, kugabanya ibiciro no gukura kwikoranabuhanga rya GaN epitaxial kuri Si substrates, ubushakashatsi bwinshi bwerekeranye no gukura kwa epitaxial GaN kuri substrate ya safiro bwagiye buhoro buhoro bugaragaza ubukonje.
GaN epitaxy kuri SiC
Ugereranije na safiro, insimburangingo ya SiC (4H- na 6H-kristu) ifite utuntu duto twa lattice idahuye na GaN epitaxial (3.1%, bihwanye na [0001] yerekanwe na epitaxial), ubushyuhe bwinshi bwo hejuru (hafi 3.8W * cm-1 * K -1), nibindi, Byongeye kandi, imiyoboro ya SiC substrates nayo ituma imiyoboro yamashanyarazi ikorwa inyuma ya substrate, ifasha koroshya imiterere yibikoresho. Kubaho kwizo nyungu byakuruye abashakashatsi benshi gukora kuri epitaxy ya GaN kuri karubide ya silicon.
Ariko, gukora muburyo butaziguye bwa SiC kugirango wirinde gukura epilayeri ya GaN nayo ihura nibibazo byinshi, harimo ibi bikurikira:
Rough Ubuso bwubuso bwa substrate ya SiC burarenze cyane ubw'ubutaka bwa safiro (sapphire roughness 0.1nm RMS, SiC roughness 1nm RMS), insimburangingo ya SiC ifite ubukana bwinshi n’imikorere idahwitse, kandi uku kwangirika no kwangiza ibisigazwa nabyo ni bimwe muri byo amasoko yinenge muri GaN epilayers.
Ens Ubucucike bwa screw ya disikuru ya SiC ni ndende (ubucucike bwa dislokisiyo 103-104cm-2), kwimura imashini bishobora gukwirakwiza epilayeri ya GaN no kugabanya imikorere yibikoresho;
Organic Gahunda ya atome hejuru yubutaka itera gushiraho amakosa yo gutondeka (BSFs) muri epilayeri ya GaN. Kuri epitaxial GaN kuri substrate ya SiC, haribintu byinshi bishoboka byateganijwe gutondekanya atome kuri substrate, bikavamo gahunda ya mbere ya atome itondekanya itondekanya ya epitaxial GaN igaragara kuri yo, ikunda kwibeshya. Gutondekanya amakosa (SFs) atangiza amashanyarazi yubatswe mumashanyarazi hafi ya c-axis, biganisha kubibazo nko kumeneka kw'ibikoresho bitandukanya indege zitwara indege;
Eff Koeffisiyoneri yo kwaguka yubushyuhe bwa SiC substrate ni ntoya kuruta iya AlN na GaN, itera kwirundanyiriza ubushyuhe bwumuriro hagati ya epitaxial na substrate mugihe cyo gukonja. Waltereit na Brand bahanuye bashingiye kubyavuye mu bushakashatsi bwabo ko iki kibazo gishobora kugabanywa cyangwa gukemurwa no gukura ibice bya epitaxial ya GaN ku ntera yoroheje, ihujwe na AlN nucleation;
Problem Ikibazo cyubushuhe bubi bwa atome ya Ga. Iyo ukura ibice bya epitaxial ya GaN hejuru yubuso bwa SiC, kubera ubushuhe buke hagati ya atome zombi, GaN ikunda gukura kwizinga rya 3D hejuru yubutaka. Kumenyekanisha buffer nigisubizo gikunze gukoreshwa mugutezimbere ubwiza bwibikoresho bya epitaxial muri GaN epitaxy. Kumenyekanisha urwego rwa AlN cyangwa AlxGa1-xN rushobora kuzamura neza ubuso bwubuso bwa SiC kandi bigatuma igipimo cya epitaxial ya GaN gikura mubice bibiri. Byongeye kandi, irashobora kandi kugenga imihangayiko no gukumira inenge ya substrate kugera kuri epitaxy ya GaN;
Technology Tekinoroji yo gutegura ya SiC substrates ntabwo ikuze, igiciro cya substrate ni kinini, kandi hari abatanga bike nibitangwa bike.
Ubushakashatsi bwa Torres et al. Bwerekana ko guteranya SiC substrate hamwe na H2 ku bushyuhe bwo hejuru (1600 ° C) mbere yuko epitaxy ishobora kubyara intambwe itondekanye hejuru yubutaka, bityo ikabona filime nziza ya AlN epitaxial kuruta iyo iba itaziguye gukura hejuru yumwimerere. Ubushakashatsi bwa Xie hamwe nitsinda rye bugaragaza kandi ko gutondekanya karibide ya silicon karbide bishobora guteza imbere cyane imiterere yimiterere nuburinganire bwa kirisitu ya epitaxial ya GaN. Smith n'abandi. basanze insimburangingo yimyenda ikomoka kuri substrate / buffer layer na buffer layer / epitaxial layer interface bifitanye isano nuburinganire bwa substrate [5].
Igicapo ca 4 TEM morphologie ya GaN epitaxial layer sample ikura kuri 6H-SiC substrate (0001) mubihe bitandukanye byo kuvura hejuru (a) gusukura imiti; (b) gusukura imiti + kuvura plasma ya hydrogen; (c) gusukura imiti + kuvura hydrogen plasma + 1300 treatment hydrogene ivura ubushyuhe bwa 30min
GaN epitaxy kuri Si
Ugereranije na karbide ya silicon, safiro nizindi nteruro, gahunda yo gutegura silicon substrate irakuze, kandi irashobora gutanga byimazeyo insimburangingo nini nini nini kandi ikora neza. Mugihe kimwe, ubushyuhe bwumuriro nubushakashatsi bwamashanyarazi nibyiza, kandi ibikoresho bya elegitoroniki bya Si birakuze. Amahirwe yo guhuza neza ibikoresho bya optoelectronic GaN hamwe nibikoresho bya elegitoroniki bya Si mugihe kizaza nabyo bituma imikurire ya epitaxy ya GaN kuri silicon ishimishije cyane.
Ariko, kubera itandukaniro rinini muburyo bwa lattice hagati ya Si substrate nibikoresho bya GaN, epitaxy ya heterogeneous ya GaN kuri Si substrate ni epitaxy nini idahuye, kandi igomba no guhura nibibazo byinshi:
Interface Ikibazo cyingufu zubuso. Iyo GaN ikuriye kuri substrate ya Si, hejuru yubutaka bwa Si hazabanza kuba nitride kugirango habeho amorphous silicon nitride layer idafasha nucleation no gukura kwinshi kwa GaN. Mubyongeyeho, ubuso bwa Si buzabanza kuvugana na Ga, izonona ubuso bwa Si substrate. Ku bushyuhe bwinshi, kubora kwa Si bizakwirakwira mu gice cya GaN epitaxial kugirango kibe ibibara bya silikoni.
✔ Umuyoboro uhoraho udahuye hagati ya GaN na Si nini (~ 17%), ibyo bizatuma habaho gushiraho insimburangingo ndende cyane kandi bigabanya cyane ubwiza bwurwego rwa epitaxial;
Ugereranije na Si, GaN ifite coefficente nini yo kwagura amashyuza (Coefficient ya GaN yo kwagura amashyanyarazi igera kuri 5.6 × 10-6K-1, coefficente yo kwagura amashyanyarazi ya Si ni 2,6 × 10-6K-1), kandi hashobora kuvuka muri GaN epitaxial layer mugihe cyo gukonjesha ubushyuhe bwa epitaxial kugeza ubushyuhe bwicyumba;
✔ Si ikorana na NH3 mubushyuhe bwinshi kugirango ikore polycrystalline SiNx. AlN ntishobora gukora nucleus ikunzwe cyane kuri polycrystalline SiNx, iganisha ku cyerekezo kidahwitse cyicyiciro cya GaN cyakuze nyuma kandi gifite inenge nyinshi, bikavamo ubuziranenge bwa kirisitiya ya epitexial ya GaN, ndetse bikagorana no gukora kristu imwe. GaN epitaxial layer [6].
Mu rwego rwo gukemura ikibazo cy’imyanya minini idahuye, abashakashatsi bagerageje kwerekana ibikoresho nka AlAs, GaAs, AlN, GaN, ZnO, na SiC nkibice bya buffer kuri Si substrates. Mu rwego rwo kwirinda ishingwa rya polycrystalline SiNx no kugabanya ingaruka mbi zayo ku bwiza bwa kristu y’ibikoresho bya GaN / AlN / Si (111), ubusanzwe TMAl isabwa kwinjizwa mu gihe runaka mbere y’ikura ry’imyororokere ya AlN buffer kubuza NH3 kutitwara hejuru ya Si igaragara kugirango ikore SiNx. Mubyongeyeho, tekinoroji ya epitaxial nka tekinoroji ya substrate tekinoroji irashobora gukoreshwa mugutezimbere ubwiza bwa epitaxial. Iterambere ryikoranabuhanga rifasha kubuza ishyirwaho rya SiNx kuri epitaxial interface, guteza imbere imikurire ibiri yibice bya epitaxial ya GaN, no kuzamura ubwiza bwikura rya epitaxial. Hiyongereyeho kandi, urwego rwa AlN buffer rushyirwaho kugirango rwishyure impagarara zatewe no gutandukanya coefficient zo kwagura ubushyuhe kugirango hirindwe gucikamo ibice bya epitaxial ya GaN kuri substrate ya silicon. Ubushakashatsi bwa Krost bwerekana ko hari isano ryiza hagati yubunini bwurwego rwa AlN buffer no kugabanuka kwingutu. Iyo umubyimba wa bffer ugeze kuri 12nm, igipimo cya epitaxial gifite uburebure burenze 6 mm gishobora guhingwa kuri substrate ya silicon binyuze muri gahunda yo gukura ikwiye idafite epitaxial layer.
Nyuma y’imbaraga zimaze igihe kinini zakozwe n’abashakashatsi, ubwiza bw’imyanya ndangagitsina ya GaN bwakuze kuri substrate ya silicon bwateye imbere ku buryo bugaragara, kandi ibikoresho nka transistor zo mu murima, Schottky barrière ultraviolet detector, ubururu-icyatsi kibisi LED na lazeri ultraviolet byateye imbere cyane.
Muncamake, kubera ko insimburangingo ya GaN ikoreshwa cyane ni epitaxy itandukanye, bose bahura nibibazo bisanzwe nko kudahuza lattice no gutandukana kwinshi muri coefficient zo kwagura ubushyuhe kuburyo butandukanye. Homogeneous epitaxial GaN substrates igarukira kubukure bwikoranabuhanga, kandi insimburangingo ntizakorwa cyane. Igiciro cyo kubyaza umusaruro ni kinini, ingano ya substrate ni nto, kandi ubwiza bwa substrate ntabwo ari bwiza. Iterambere ryimyororokere mishya ya GaN hamwe no kuzamura ubwiza bwa epitaxial biracyari kimwe mubintu byingenzi bibuza iterambere ryiterambere rya GaN epitaxial.
IV. Uburyo busanzwe kuri epitaxy ya GaN
MOCVD (kubika imyuka ya chimique)
Birasa nkaho epitaxy ya homogeneous on GaN substrates aribwo buryo bwiza kuri epitaxy ya GaN. Nyamara, kubera ko ababanziriza imyuka ya chimique ari trimethylgallium na ammonia, na gaze itwara ni hydrogène, ubusanzwe ubwiyongere bwa MOCVD bugera ku 1000-1100 and, kandi umuvuduko wa MOCVD ni microne nkeya mu isaha. Irashobora gutanga intera ihanamye kurwego rwa atome, ikwiranye cyane no gukura itandukanye, amariba ya kwant, superlattices nizindi nzego. Iterambere ryayo ryihuta, uburinganire bwiza, hamwe nuburyo bukura ahantu hanini no mubice byinshi bikoreshwa mubikorwa byinganda.
MBE (epitaxy ya molekulari)
Muri molekile beam epitaxy, Ga ikoresha isoko yibanze, kandi azote ikora iboneka muri azote ikoresheje plasma ya RF. Ugereranije nuburyo bwa MOCVD, ubushyuhe bwo gukura bwa MBE buri hafi 350-400 ℃ munsi. Ubushyuhe bwo hasi burashobora kwirinda umwanda ushobora guterwa nubushyuhe bwo hejuru. Sisitemu ya MBE ikora munsi ya ultra-high vacuum, ituma ihuza uburyo bwinshi bwo kumenya. Muri icyo gihe, umuvuduko w’ubwiyongere bw’ubushobozi n’umusaruro ntushobora kugereranywa na MOCVD, kandi ikoreshwa cyane mu bushakashatsi bwa siyansi [7].
Igishushanyo 5 (a) Igishushanyo cya Eiko-MBE (b) MBE nyamukuru reaction yicyumba
Uburyo bwa HVPE (hydride vapor phase epitaxy)
Ibibanziriza hydride vapor phase epitaxy uburyo ni GaCl3 na NH3. Detchprohm n'abandi. yakoresheje ubu buryo kugirango akure epitaxial ya GaN amagana ya microne yuburebure hejuru yubutaka bwa safiro. Mu bushakashatsi bwabo, umurima wa ZnO wakuze hagati yubutaka bwa safiro na epitaxial layer nka buffer, kandi epitaxial layer yakuweho hejuru yubutaka. Ugereranije na MOCVD na MBE, ikintu nyamukuru kiranga uburyo bwa HVPE ni umuvuduko wacyo wo hejuru, ukwiranye no kubyara ibice byinshi hamwe nibikoresho byinshi. Nyamara, iyo umubyimba wigice cya epitaxial urenze 20 mm, igipimo cya epitaxial cyakozwe nubu buryo gikunda gucika.
Akira USUI yashyizeho uburyo bwa tekinoroji ya substrate ishingiye kuri ubu buryo. Babanje gukura buke 1-1.5 mm z'uburebure bwa GaN epitaxial layer kuri safiro substrate bakoresheje uburyo bwa MOCVD. Igice cya epitaxial cyari kigizwe na 20nm yuburebure bwa GaN buffer ikura mugihe cyubushyuhe buke hamwe na GaN ikura mubihe byubushyuhe bwinshi. Hanyuma, kuri 430 ℃, hashyizweho urwego rwa SiO2 hejuru yubutaka bwa epitaxial, hanyuma imirongo yidirishya ikorwa kuri firime ya SiO2 na fotolitografiya. Umwanya wumurongo wari 7μm naho ubugari bwa mask bwari hagati ya 1 mm na 4 mm. Nyuma yiri terambere, babonye epitaxial ya GaN kuri santimetero 2 ya diametre ya safiro yari itarangiritse kandi yoroshye nkindorerwamo nubwo umubyimba wiyongereye kugera kuri microni mirongo cyangwa amagana. Ubucucike bw'inenge bwagabanutse kuva kuri 109-1010cm-2 y'uburyo gakondo bwa HVPE bugera kuri 6 × 107cm-2. Bagaragaje kandi mu bushakashatsi ko iyo umuvuduko wo gukura urenze 75 mm / h, ubuso bw'icyitegererezo bwaba bubi [8].
Igishushanyo cya 6 Igishushanyo mbonera
V. Incamake na Outlook
Ibikoresho bya GaN byatangiye kugaragara mu 2014 ubwo itara ry'ubururu LED ryatsindaga igihembo cyitiriwe Nobel muri fiziki muri uwo mwaka, maze ryinjira mu baturage mu gusaba kwishyurwa byihuse mu bikoresho bya elegitoroniki. Mubyukuri, porogaramu zikoreshwa mumashanyarazi hamwe nibikoresho bya RF bikoreshwa muri sitasiyo ya 5G abantu benshi badashobora kubona nabyo byagaragaye bucece. Mu myaka yashize, iterambere ryibikoresho bya GaN bishingiye ku bikoresho by’amashanyarazi biteganijwe ko bizafungura ingingo nshya zo gukura ku isoko ry’ibikoresho bya GaN.
Isoko rinini rikenewe ku isoko rizateza imbere iterambere ry’inganda n’ikoranabuhanga bijyanye na GaN. Hamwe no gukura no kunoza urwego rwinganda zijyanye na GaN, ibibazo byugarije ikoranabuhanga rya GaN bigezweho amaherezo bizanozwa cyangwa bikemuke. Mugihe kizaza, abantu rwose bazatezimbere tekinoroji nshya ya epitaxial hamwe nuburyo bwiza bwo guhitamo. Icyo gihe, abantu bazashobora guhitamo tekinoroji yubushakashatsi bwo hanze ikenewe kandi bagabanye ibintu bitandukanye bakurikije ibiranga ibintu, kandi bagatanga ibicuruzwa byabigenewe cyane.
Igihe cyo kohereza: Jun-28-2024