Amashanyarazi atemba

Urashobora kubyumva nubwo utigeze wiga physics cyangwa imibare, ariko biroroshye cyane kandi birakwiriye kubatangiye. Niba ushaka kumenya byinshi kuri CMOS, ugomba gusoma ibikubiye muri iki kibazo, kuko nyuma yo gusobanukirwa inzira igenda (ni ukuvuga inzira yo gukora diode) urashobora gukomeza kumva ibikurikira. Noneho reka twige uburyo iyi CMOS ikorerwa muri societe yashinze muri iki kibazo (dufata inzira idateye imbere nkurugero, CMOS yuburyo bugezweho iratandukanye mumiterere nihame ryumusaruro).

Mbere ya byose, ugomba kumenya ko wafers fondasiyo ibona kubitanga (silicon waferutanga) ni umwe umwe, hamwe na radiyo ya 200mm (8-cmuruganda) cyangwa 300mm (12-cmuruganda). Nkuko bigaragara ku gishushanyo gikurikira, mubyukuri birasa na cake nini, ibyo twita substrate.

Ariko, ntabwo byoroshye kuri twe kubireba muri ubu buryo. Turareba kuva hasi hejuru tukareba ibice byambukiranya ibice, bihinduka ishusho ikurikira.

Ibikurikira, reka turebe uko moderi ya CMOS igaragara. Kubera ko inzira nyayo isaba intambwe ibihumbi, nzavuga ku ntambwe zingenzi za wafer yoroshye ya santimetero 8 hano.

 

 

Gukora neza no guhinduranya urwego:

Nukuvuga ko iriba ryatewe muri substrate no gutera ion (Ion Implantation, nyuma bita imp). Niba ushaka gukora NMOS, ugomba gushiramo P-amariba. Niba ushaka gukora PMOS, ugomba gushiramo N-amariba. Kuburyo bworoshye, reka dufate NMOS nkurugero. Imashini yo gutera ion yinjiza ibintu byo mu bwoko bwa P kugirango byinjizwe muri substrate kugeza ubujyakuzimu bwihariye, hanyuma ubishyushya hejuru yubushyuhe bwo hejuru mu itanura kugira ngo ukore izo ion hanyuma ukwirakwize hirya no hino. Ibi birangiza umusaruro w'iriba. Nibyo bisa nyuma yumusaruro urangiye.

Nyuma yo gukora iriba, hari izindi ntambwe zo gutera intambwe, intego yaryo ni ukugenzura ingano yumuyoboro wumuvuduko na voltage yumubyimba. Umuntu wese arashobora kubyita inversion layer. Niba ushaka gukora NMOS, inversion layer yatewe hamwe na P-ion, kandi niba ushaka gukora PMOS, igipimo cyo guhinduranya cyatewe na N-ion. Nyuma yo guterwa, ni moderi ikurikira.

Hano hari ibintu byinshi hano, nkingufu, inguni, kwibanda kwa ion mugihe cyo gutera ion, nibindi, bitashyizwe muriki kibazo, kandi ndizera ko niba uzi ibyo bintu, ugomba kuba uri imbere, nawe igomba kugira uburyo bwo kubyiga.

 

Gukora SiO2:

Dioxyde ya Silicon (SiO2, nyuma yitwa okiside) izakorwa nyuma. Mubikorwa bya CMOS, hariho inzira nyinshi zo gukora oxyde. Hano, SiO2 ikoreshwa munsi y irembo, kandi ubunini bwayo bugira ingaruka ku bunini bwa voltage yumubyimba nubunini bwumuyoboro. Kubwibyo, ibishingwe byinshi bihitamo uburyo bwo gutanura itanura hamwe nuburyo bwiza cyane, kugenzura uburebure bwuzuye, hamwe nuburinganire bwiza kuriyi ntambwe. Mubyukuri, biroroshye cyane, ni ukuvuga, mumatanura yitanura hamwe na ogisijeni, ubushyuhe bwo hejuru burakoreshwa kugirango ogisijeni na silikoni bitange imiti kugirango bibyare SiO2. Muri ubu buryo, urwego ruto rwa SiO2 rwakozwe hejuru ya Si, nkuko bigaragara ku gishushanyo gikurikira.

Birumvikana ko hano hari amakuru menshi yihariye hano, nkimpamyabumenyi zingana iki, urugero rwa ogisijeni ikenewe, igihe ubushyuhe bwo hejuru bukenewe, nibindi. Ntabwo aribyo turimo gusuzuma ubu, nibyo byihariye.

Gushiraho irembo ryanyuma Poly:

Ariko ntikirarangira. SiO2 ihwanye gusa numutwe, kandi irembo nyaryo (Poly) ntiratangira. Intambwe ikurikira rero ni ugushira urwego rwa polysilicon kuri SiO2 (polysilicon nayo igizwe nikintu kimwe cya silicon, ariko gahunda ya lattice iratandukanye. Ntumbaze impamvu substrate ikoresha silikoni imwe ya kirisiti kandi irembo rikoresha polysilicon. Hano ni igitabo cyitwa Semiconductor Physics Urashobora kubyiga. Biteye isoni ~). Poly nayo ihuza cyane muri CMOS, ariko ibice bya poly ni Si, kandi ntibishobora kubyara reaction itaziguye hamwe na Si substrate nko gukura kwa SiO2. Ibi bisaba umugani wa CVD (Depical Chemical Vapor Deposition), ugomba kubyitwaramo imiti mu cyuho no kugusha ibintu byakozwe kuri wafer. Muri uru rugero, ibintu byakozwe ni polysilicon, hanyuma bigwa kuri wafer (aha ndagira ngo mbabwire ko poly ikorerwa mu itanura ry itanura na CVD, bityo rero kubyara poly ntibikorwa na mashini ya CVD isukuye).

Ariko polysilicon yakozwe nubu buryo izagwa kuri wafer yose, kandi isa nkiyi nyuma yimvura.

 

Kumenyekanisha Poly na SiO2:

Kuri iyi ntambwe, imiterere ihagaritse dushaka yarakozwe mubyukuri, hamwe na poly hejuru, SiO2 hepfo, na substrate hepfo. Ariko ubu wafer yose nkiyi, kandi dukeneye gusa umwanya wihariye kugirango tube imiterere ya "robine". Hariho rero intambwe ikomeye cyane mubikorwa byose - kwerekana.
Twabanje gukwirakwiza urwego rwabafotora hejuru ya wafer, kandi biba nkibi.

Noneho shyiramo mask yasobanuwe (uburyo bwumuzunguruko bwasobanuwe kuri mask), hanyuma urangize urumuri nurumuri rwumurongo wihariye. Ufotora azakorera ahantu hakeye. Kubera ko agace kahagaritswe na mask katamurikirwa nisoko yumucyo, iki gice cyabafotora ntigikora.

Kubera ko umufotozi ukora byoroshye byoroshye gukaraba n'amazi yihariye ya chimique, mugihe umufotozi udakora adashobora gukaraba, nyuma ya irrasiyo, amazi yihariye akoreshwa mugukaraba fotora ikora, hanyuma amaherezo biba nkibi, hasigara Uwiteka gufotora aho Poly na SiO2 bigomba kugumaho, no gukuraho uwifotora aho bidakenewe kugumaho.