Gutobora hakiri kare byateje imbere iterambere ryogusukura cyangwa gukaraba. Uyu munsi, gukama byumye ukoresheje plasma byahindutse inzira nyamukuruinzira. Plasma igizwe na electron, cations na radicals. Ingufu zikoreshwa muri plasma zitera electron zo hanze ya gaze yinkomoko muri leta idafite aho ibogamiye kwamburwa, bityo bigahindura electroni muri cations.
Byongeye kandi, atome zidatunganye muri molekile zirashobora kwamburwa ukoresheje ingufu kugirango habeho radicals zidafite aho zibogamiye. Kurya byumye bikoresha cations na radicals bigizwe na plasma, aho cations ari anisotropique (ibereye guterwa mucyerekezo runaka) naho radicals ni isotropic (ibereye guterwa mubyerekezo byose). Umubare wa radicals urenze kure umubare wa cations. Muri iki gihe, gukama byumye bigomba kuba isotropic nko gutose.
Nyamara, ni anisotropic etching ya etching yumye ituma ultra-miniaturized circuit ishoboka. Ni izihe mpamvu zibitera? Mubyongeyeho, umuvuduko wihuta wa cations na radicals uratinda cyane. Nigute dushobora gukoresha uburyo bwo gufata plasma muburyo bwo gukora byinshi imbere yibi bitagenda neza?
1. Ikigereranyo cya Aspect (A / R)
Igishushanyo 1.Icyerekezo cyo kugereranya ningaruka ziterambere ryikoranabuhanga kuri yo
Ikigereranyo cya Aspect ni igipimo cyubugari bwa horizontal n'uburebure buhagaritse (ni ukuvuga uburebure bugabanijwe n'ubugari). Gutoya igipimo gikomeye (CD) cyumuzunguruko, nini nini igereranya agaciro. Nukuvuga ko, urebye igipimo kigereranyo cya 10 nubugari bwa 10nm, uburebure bwumwobo bwacukuwe mugihe cyo gutobora bugomba kuba 100nm. Kubwibyo, kubisekuruza bizaza bisaba ultra-miniaturisation (2D) cyangwa ubucucike bukabije (3D), indangagaciro zingana cyane zirasabwa kugirango harebwe niba cations zishobora kwinjira muri firime yo hepfo mugihe cyo kuroba.
Kugirango ugere kuri tekinoroji ya ultra-miniaturizasiya ifite igipimo gikomeye kiri munsi ya 10nm mu bicuruzwa 2D, ubushobozi bwa capacitor aspect ratio ya dinamike idasanzwe yo kwibuka (DRAM) igomba kuguma hejuru ya 100. Muri ubwo buryo, 3D NAND flash yibikoresho nayo isaba agaciro kagereranijwe cyane. Gutondekanya ibice 256 cyangwa byinshi bya selile stacking layers. Nubwo ibisabwa bisabwa mubindi bikorwa byujujwe, ibicuruzwa bisabwa ntibishobora kubyazwa umusaruro iyoinzirantabwo ari hejuru. Niyo mpamvu ikoranabuhanga rya etching rigenda riba ngombwa.
2. Incamake yo gutera plasma
Igishushanyo 2. Kugena gaze ya plasma ukurikije ubwoko bwa firime
Iyo umuyoboro udafite akamaro ukoreshejwe, ubunini bwa diameter ya pipe, niko byoroshye ko amazi yinjira, aribyo bita capillary phenomenon. Ariko, niba umwobo (ufunze impera) ugomba gucukurwa ahantu hagaragaye, kwinjiza amazi biba bigoye cyane. Kubwibyo, kubera ko ubunini bukomeye bwumuzunguruko bwari 3um kugeza 5um hagati ya za 1970, bwumyekurirayagiye isimbuza buhoro buhoro ibyatsi nkibisanzwe. Nukuvuga ko, nubwo ionisiyoneri, biroroshye kwinjira mubyobo byimbitse kuko ingano ya molekile imwe iba ntoya kuruta ya molekile yumuti wa polymer.
Mugihe cyo gutera plasma, imbere mucyumba cyo gutunganya gikoreshwa mugutobora bigomba guhindurwa kugirango habeho icyuho mbere yo gutera gaze isoko ya plasma ikwiranye nigice kibishinzwe. Mugihe cyo gukuramo firime ikomeye ya okiside, hagomba gukoreshwa imyuka ikomeye ya karubone fluoride. Kuri firime nkeya ya silicon cyangwa ibyuma, imyuka ya chlorine ishingiye kuri chlorine igomba gukoreshwa.
None, ni gute urwego rw'irembo hamwe na dioxyde de silikoni iri munsi (SiO2) iringaniza?
Ubwa mbere, kurwego rwirembo, silikoni igomba gukurwaho hifashishijwe plasma ishingiye kuri chlorine (silicon + chlorine) hamwe na polysilicon yo guhitamo. Kubice byo hasi byerekana insimburangingo, firime ya dioxyde de silicon igomba gushirwa mubyiciro bibiri ukoresheje gaze ya plasma ya karubone ya gaze ya gaze (silicon dioxide + carbone tetrafluoride) hamwe no guhitamo neza no gukora neza.
3. Igikorwa cya ion reaction (RIE cyangwa physicochemical etching) inzira
Igishushanyo 3. Ibyiza bya ion reaction (anisotropy nigipimo kinini)
Plasma ikubiyemo radicals yubusa ya isotropic na anisotropic cations, none ikora ite anisotropique?
Plasma yumye ikorwa cyane cyane na ion reaction (RIE, Reaction Ion Etching) cyangwa porogaramu zishingiye kuri ubu buryo. Intandaro yuburyo bwa RIE nuguca intege imbaraga zihuza molekile zintego muri firime yibasira agace kegeranye na anisotropique. Agace kacitse intege kinjizwa na radicals yubuntu, ihujwe nuduce tugize urwego, ihinduka gaze (uruganda ruhindagurika) ikarekurwa.
Nubwo radicals yubuntu ifite ibiranga isotropique, molekile zigize ubuso bwo hasi (imbaraga zazo zigabanuka bitewe nigitero cya cations) zifatwa byoroshye na radicals zubuntu hanyuma zihindurwamo ibice bishya kuruta inkuta zimpande zifite imbaraga zikomeye. Kubwibyo, kumanuka kumanuka bihinduka inzira nyamukuru. Ibice byafashwe bihinduka gaze hamwe na radicals yubusa, yangiritse kandi ikarekurwa hejuru yubutaka bwa vacuum.
Muri iki gihe, cations zabonetse kubikorwa byumubiri hamwe na radicals yubusa yabonetse kubikorwa bya chimique byahujwe no guterwa kumubiri na chimique, kandi igipimo cyo guterwa (Etch Rate, urugero rwo gutobora mugihe runaka) cyiyongereyeho inshuro 10 ugereranije nurubanza rwa cationic etching cyangwa radical radical etching wenyine. Ubu buryo ntibushobora kongera igipimo cyokunywa kwa anisotropique kumanuka hasi, ariko kandi gikemura ikibazo cyibisigisigi bya polymer nyuma yo gutera. Ubu buryo bwitwa reaction reaction ion etching (RIE). Urufunguzo rwo gutsinda kwa RIE ni ugushaka plasma isoko ya gaz ikwiranye na firime. Icyitonderwa: Gutera plasma ni RIE, kandi byombi birashobora gufatwa nkigitekerezo kimwe.
4. Igipimo cya Etch nigipimo ngenderwaho cyibikorwa
Igicapo 4. Ibipimo ngenderwaho bya Etch bijyanye nigipimo cya Etch
Igipimo cya Etch bivuga ubujyakuzimu bwa firime biteganijwe ko izagerwaho mumunota umwe. None bivuze iki ko igipimo cya etch gitandukana kubice bitandukanye kuri wafer imwe?
Ibi bivuze ko ubujyakuzimu bwa etch buratandukanye kubice kuri wafer. Kubwiyi mpamvu, ni ngombwa cyane gushiraho ingingo yanyuma (EOP) aho guterana bigomba guhagarara urebye igipimo cya etch hamwe nubujyakuzimu. Nubwo EOP yashizweho, haracyari uduce tumwe na tumwe aho ubujyakuzimu bwa etch bwimbitse (burenze urugero) cyangwa butaremereye (butari munsi) kuruta uko byari byateganijwe mbere. Ariko, kutarya bitera kwangirika kuruta kurenza igihe mugihe cyo gutera. Kuberako mugihe cyo kutitonda, igice kitarimo ibice bizabangamira inzira zikurikira nko gutera ion.
Hagati aho, guhitamo (gupimwa nigipimo cya etch) nigikorwa cyingenzi cyerekana imikorere ya etching. Igipimo cyo gupima gishingiye ku kugereranya igipimo cya etch cyurwego rwa mask (firime yifotozi, firime ya okiside, firime nitride ya silicon, nibindi) hamwe nicyerekezo. Ibi bivuze ko uko guhitamo kwinshi, byihuse intego igenewe. Urwego rwo hejuru rwa miniaturizasiya, niko guhitamo ibisabwa ni ukureba niba imiterere myiza ishobora gutangwa neza. Kubera ko icyerekezo cyo gutondeka kigororotse, guhitamo gutondekanya gutondeka ni bike, mugihe guhitamo gukabije gukabije ari hejuru, biteza imbere guhitamo RIE.
5. Uburyo bwo gutobora
Igicapo 5. Uburyo bwo gutobora
Ubwa mbere, wafer ishyirwa mu itanura rya okiside hamwe nubushyuhe bwagumishijwe hagati ya 800 na 1000 and, hanyuma firime ya dioxyde de silicon (SiO2) ifite imiterere myinshi yo gukingira ikorwa hejuru yubutaka hakoreshejwe uburyo bwumye. Ibikurikira, uburyo bwo kubitsa bwinjijwe kugirango habeho urwego rwa silicon cyangwa urwego ruyobora kuri firime ya oxyde ikoresheje imyuka ya chimique (CVD) / imyuka yumubiri (PVD). Niba hashyizweho urwego rwa silicon, inzira yo gukwirakwiza umwanda irashobora gukorwa kugirango yongere ubworoherane nibiba ngombwa. Mugihe cyo gukwirakwiza umwanda, imyanda myinshi yongerwaho inshuro nyinshi.
Muri iki gihe, urwego rukingira hamwe na polysilicon bigomba guhurizwa hamwe. Ubwa mbere, hakoreshwa umufotozi. Ibikurikiraho, mask ishyirwa kuri firime yifotozi kandi kwerekana neza bigakorwa no kwibizwa kugirango ushushanye ishusho wifuza (itagaragara kumaso) kuri firime yifotozi. Iyo igishushanyo mbonera cyerekanwe niterambere, uwifotora mugace ka fotosensitivite akurwaho. Noneho, wafer yatunganijwe na fotolithographe yimurirwa mubikorwa byo gutobora byumye.
Kurya byumye bikorwa cyane cyane na ion reaction (RIE), aho guswera bigaruka cyane cyane mugusimbuza gaze isoko ikwiranye na buri firime. Byombi byumye kandi bitose bigamije kongera igipimo (A / R agaciro). Byongeye kandi, isuku isanzwe irasabwa gukuraho polymer yegeranijwe munsi yumwobo (icyuho cyatewe no gutobora). Ingingo y'ingenzi ni uko impinduka zose (nk'ibikoresho, gaze isoko, igihe, imiterere n'uruhererekane) bigomba guhindurwa mu buryo bwa organisme kugira ngo igisubizo cyogusukura cyangwa gaze ya plasma ishobora gutemba ikamanuka munsi yumwobo. Guhinduka gake mubihinduka bisaba kongera kubara izindi mpinduka, kandi iyi nzira yo kubara irasubirwamo kugeza yujuje intego ya buri cyiciro. Vuba aha, ibice bya monoatomic nka atomic layer deposition (ALD) byahindutse byoroshye kandi bikomeye. Kubwibyo, tekinoroji ya etching igenda yerekeza kumikoreshereze yubushyuhe buke nigitutu. Igikorwa cyo guswera kigamije kugenzura ibipimo bikomeye (CD) kugirango bitange uburyo bwiza kandi harebwe ko ibibazo biterwa nigikorwa cyo guterana birindwa, cyane cyane munsi y’ibiti ndetse n’ibibazo bijyanye no gukuraho ibisigazwa. Ingingo ebyiri zavuzwe haruguru zijyanye no guswera zigamije guha abasomyi gusobanukirwa nintego yuburyo bwo guterana, inzitizi zo kugera ku ntego zavuzwe haruguru, hamwe n’ibipimo ngenderwaho bikoreshwa mu gutsinda izo nzitizi.
Igihe cyo kohereza: Nzeri-10-2024