SiC isize ibishushanyo mbonera bikoreshwa muburyo bwo gushyigikira no gushyushya insimburangingo imwe ya kirisiti mu bikoresho bya chimique biva mu byuma (MOCVD). Ubushyuhe bwumuriro, uburinganire bwubushyuhe hamwe nibindi bipimo bya SiC isize grafite base bigira uruhare runini mubwiza bwikura ryibintu bya epitaxial, bityo rero nikintu cyingenzi cyibikoresho bya MOCVD.
Muburyo bwo gukora wafer, ibice bya epitaxial byongeye kubakwa kuri wafer substrate kugirango byoroherezwe gukora ibikoresho. Ibikoresho bisanzwe LED bitanga urumuri bigomba gutegura epitaxial layer ya GaAs kuri sisitemu ya silicon; Igice cya epitaxial ya SiC gihingwa kuri substrate ya SiC ikora kugirango yubake ibikoresho nka SBD, MOSFET, nibindi, kuri voltage nyinshi, amashanyarazi menshi hamwe nizindi mbaraga zikoreshwa; GaN epitaxial layer yubatswe kuri kimwe cya kabiri cyubatswe na SiC substrate kugirango irusheho kubaka HEMT nibindi bikoresho bikoreshwa na RF nko gutumanaho. Iyi nzira ntishobora gutandukana nibikoresho bya CVD.
Mu bikoresho bya CVD, substrate ntishobora gushyirwa ku cyuma cyangwa ngo ishyirwe gusa ku musingi wo kwanduza epitaxial, kubera ko irimo imyuka ya gaze (itambitse, ihagaritse), ubushyuhe, igitutu, gukosora, kumena imyanda n'ibindi bintu ibintu bigira ingaruka. Kubwibyo, harakenewe shingiro, hanyuma substrate igashyirwa kuri disiki, hanyuma epitaxial depition ikorerwa kuri substrate ikoresheje tekinoroji ya CVD, kandi iyi base ni SiC yubatswe na grafite (nanone izwi nka tray).
SiC isize ibishushanyo mbonera bikoreshwa muburyo bwo gushyigikira no gushyushya insimburangingo imwe ya kirisiti mu bikoresho bya chimique biva mu byuma (MOCVD). Ubushyuhe bwumuriro, uburinganire bwubushyuhe hamwe nibindi bipimo bya SiC isize grafite base bigira uruhare runini mubwiza bwikura ryibintu bya epitaxial, bityo rero nikintu cyingenzi cyibikoresho bya MOCVD.
Ibyuma biva mu bimera (MOCVD) nubuhanga bwibanze bwo gukura kwa epitaxial ya firime ya GaN muri LED yubururu. Ifite ibyiza byo gukora byoroshye, kugenzura umuvuduko wubwiyongere no kwera kwinshi kwa firime ya GaN. Nkibintu byingenzi mubyumba byitwaramo ibikoresho bya MOCVD, urufatiro rukoreshwa mugukura kwa epitexial ya GaN rugomba kugira ibyiza byo guhangana nubushyuhe bwo hejuru, ubushyuhe bwumuriro umwe, ihindagurika ryimiti, imbaraga zikomeye zo guhangana nubushyuhe, nibindi. Graphite irashobora guhura ibisabwa haruguru.
Nka kimwe mu bice byingenzi bigize ibikoresho bya MOCVD, igishushanyo mbonera ni umutwara nogushyushya umubiri wa substrate, bigena mu buryo butaziguye uburinganire nubuziranenge bwibikoresho bya firime, bityo ubwiza bwabwo bukagira ingaruka ku buryo butaziguye ku itegurwa rya epitaxial, kandi kuri kimwe igihe, hamwe no kongera umubare wimikoreshereze no guhindura imiterere yakazi, biroroshye cyane kwambara, bijyanye nibikoreshwa.
Nubwo grafite ifite ubushyuhe buhebuje kandi butajegajega, ifite inyungu nziza nkibice fatizo byibikoresho bya MOCVD, ariko mugikorwa cyo kuyibyaza umusaruro, grafite izonona ifu kubera ibisigisigi bya gaze yangirika n’ibinyabuzima byuma, hamwe nubuzima bwa serivisi bwa igishushanyo mbonera kizagabanuka cyane. Mugihe kimwe, ifu ya grafite igwa bizatera umwanda kuri chip.
Kugaragara kwikoranabuhanga rya coating birashobora gutanga ifu yubutaka, kongera ubushyuhe bwumuriro, no kunganya ikwirakwizwa ryubushyuhe, ryabaye ikoranabuhanga nyamukuru ryo gukemura iki kibazo. Igishushanyo mbonera mubikoresho bya MOCVD koresha ibidukikije, igishushanyo mbonera cya grafite kigomba kuba cyujuje ibi bikurikira:
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(3) Ifite imiti ihamye kugirango yirinde gutwika ubushyuhe bukabije hamwe nikirere cyangirika.
SiC ifite ibyiza byo kurwanya ruswa, gutwara ubushyuhe bwinshi, kurwanya ubushyuhe bwumuriro hamwe n’imiti ihamye, kandi irashobora gukora neza mukirere cya GaN. Mubyongeyeho, coefficente yo kwagura ubushyuhe bwa SiC itandukanye cyane na grafite, bityo SiC nikintu cyatoranijwe kubutaka bwo hejuru bwa grafite.
Kugeza ubu, SiC isanzwe ni ubwoko bwa 3C, 4H na 6H, kandi SiC ikoresha ubwoko bwa kristu butandukanye. Kurugero, 4H-SiC irashobora gukora ibikoresho bifite ingufu nyinshi; 6H-SiC nicyo gihamye kandi gishobora gukora ibikoresho byamashanyarazi; Kubera imiterere isa na GaN, 3C-SiC irashobora gukoreshwa mugukora epitaxial GaN no gukora ibikoresho bya SiC-GaN RF. 3C-SiC izwi kandi nka β-SiC, kandi gukoresha cyane β-SiC ni nka firime n'ibikoresho byo gutwikira, bityo β-SiC kuri ubu ni ibikoresho by'ingenzi byo gutwikira.
Uburyo bwo gutegura silicon karbide
Kugeza ubu, uburyo bwo gutegura ibishishwa bya SiC burimo cyane cyane uburyo bwa gel-sol, uburyo bwo gushiramo, uburyo bwo gutwika brush, uburyo bwo gutera plasma, uburyo bwa reaction ya gaze ya chimique (CVR) nuburyo bwo kubika imyuka ya chimique (CVD).
Uburyo bwo gushira:
Uburyo ni ubwoko bwubushyuhe bwo hejuru bwo gucamo ibice, bukoresha cyane cyane imvange yifu ya Si nifu ya C nkifu yinjizamo, matrix ya grafite ishyirwa mubifu, kandi ubushyuhe bwo hejuru bukorerwa muri gaze ya inert , hanyuma amaherezo ya SiC iboneka hejuru ya matrise ya grafite. Inzira iroroshye kandi guhuza hagati yigitereko na substrate nibyiza, ariko uburinganire bwikibiriti ku cyerekezo cyubugari ni bubi, byoroshye kubyara imyobo myinshi kandi biganisha ku kurwanya nabi okiside.
Brush uburyo bwo gutwikira:
Uburyo bwo gutwikisha brush ni uburyo bwo koza ibintu bibisi byamazi hejuru ya matrise ya grafite, hanyuma bigakiza ibikoresho bibisi mubushyuhe runaka kugirango utegure igifuniko. Inzira iroroshye kandi ikiguzi ni gito, ariko igipfundikizo cyateguwe nuburyo bwo gutwikira brush ni ntege nke hamwe na substrate, uburinganire bwa coating burakennye, igifuniko ni gito kandi irwanya okiside ni mike, kandi nubundi buryo burakenewe kugirango dufashe ni.
Uburyo bwo gutera plasma:
Uburyo bwo gutera plasma ni ugutera ahanini ibikoresho fatizo byashongeshejwe cyangwa byashongeshejwe hejuru ya matrise ya grafite hamwe nimbunda ya plasma, hanyuma bigakomera hanyuma bigahuza igipfundikizo. Uburyo bworoshe gukora kandi burashobora gutegura igipfundikizo cinshi cya silicon karbide, ariko karubide ya silicon carbide yateguwe nuburyo akenshi iba ifite intege nke cyane kandi itera imbaraga zo kurwanya okiside, bityo rero ikoreshwa muburyo bwo gutegura ibishishwa bya SiC kugirango bitezimbere ubwiza bw'igitambaro.
Uburyo bwa Gel-sol:
Uburyo bwa gel-sol nugutegura cyane cyane igisubizo kiboneye kandi kibonerana gikingira hejuru ya matrix, kuma muri gel hanyuma ugacumura kugirango ubone igifuniko. Ubu buryo buroroshye gukora kandi buke mubiciro, ariko igipfundikizo cyakozwe gifite ibitagenda neza nko guhangana nubushyuhe buke bwumuriro no guturika byoroshye, ntabwo rero bishobora gukoreshwa cyane.
Imyuka ya gazi (CVR):
CVR itanga cyane cyane igicapo cya SiC ikoresheje ifu ya Si na SiO2 kugirango itange amavuta ya SiO mubushyuhe bwinshi, kandi urukurikirane rwibintu bya chimique bibera hejuru yubutaka bwa C. Igicapo cya SiC cyateguwe nubu buryo gifitanye isano rya hafi na substrate, ariko ubushyuhe bwa reaction buri hejuru kandi ikiguzi ni kinini.
Kubika imyuka ya chimique (CVD):
Kugeza ubu, CVD nubuhanga bwingenzi bwo gutegura igicucu cya SiC hejuru yubutaka. Inzira nyamukuru nuruhererekane rwibintu bya fiziki na chimique yibintu bya gaze ya gaze hejuru yubutaka, hanyuma amaherezo ya SiC itegurwa no kubitsa hejuru yubutaka. Ipitingi ya SiC yateguwe nubuhanga bwa CVD ihujwe cyane nubuso bwa substrate, bushobora kunoza neza kurwanya okiside no kurwanya abstratif yibikoresho bya substrate, ariko igihe cyo kohereza ubu buryo ni kirekire, kandi gaze ya reaction ifite uburozi runaka gaze.
Imiterere yisoko rya SiC yatwikiriye igishushanyo mbonera
Iyo abanyamahanga batangiye kare, bari bafite icyerekezo gisobanutse kandi bafite isoko ryinshi. Ku rwego mpuzamahanga, abatanga isoko rya SiC basize ibishushanyo mbonera ni Ubuholandi Xycard, Ubudage SGL Carbon (SGL), Ubuyapani Toyo Carbon, Amerika MEMC n’andi masosiyete, ahanini akaba afite isoko mpuzamahanga. Nubwo Ubushinwa bwacishije mu ikoranabuhanga ry’ibanze ry’iterambere ry’uburinganire bwa SiC hejuru ya matrise ya grafite, matrix yo mu rwego rwo hejuru iracyashingira ku Budage SGL, Ubuyapani Toyo Carbon n’indi mishinga, matrise ya grafite itangwa n’ibigo by’imbere mu gihugu bigira ingaruka kuri serivisi ubuzima bitewe nubushyuhe bwumuriro, moderi ya elastike, modulus ikaze, inenge ya lattice nibindi bibazo byiza. Ibikoresho bya MOCVD ntibishobora kuba byujuje ibisabwa kugirango ukoreshe ibishushanyo mbonera bya SiC.
Inganda za semiconductor mu Bushinwa ziratera imbere byihuse, hamwe n’ubwiyongere buhoro buhoro ibikoresho bya epitaxial ibikoresho bya MOCVD, hamwe n’ibindi bikorwa byiyongera, isoko ry’ibicuruzwa fatizo bya SiC bizaza byiyongera vuba. Dukurikije ibigereranyo by’inganda zerekana ko isoko ry’ibanze rya grafite mu gihugu rizarenga miliyoni 500 mu myaka mike iri imbere.
SiC yashushanyijeho grafite ishingiro ryibanze ryibikoresho byinganda zinganda zinganda, kumenya ikoranabuhanga ryibanze ryumusaruro waryo ninganda, no kumenya aho urwego rwose rwibikoresho-bitunganyirizwa-ibikoresho-nganda bifite akamaro kanini mugutezimbere iterambere. Inganda zikoresha amashanyarazi. Umwanya wo murugo wa SiC washyizweho na grafite base uratera imbere, kandi ubuziranenge bwibicuruzwa bushobora kugera kurwego mpuzamahanga rwateye imbere vuba.
Igihe cyoherejwe: Nyakanga-24-2023