Imiterere yubushakashatsi bwa SiC ihuriweho

Bitandukanye nibikoresho bya S1C bikurikirana bikurikirana imbaraga nyinshi, ingufu nyinshi, inshuro nyinshi hamwe nubushyuhe bwo hejuru, intego yubushakashatsi bwumuzunguruko wa SiC ahanini ni ukubona ubushyuhe bwo hejuru bwa digitale yububasha bwimbaraga za IC kugenzura imiyoboro. Nkuko SiC ihuriweho n'umuriro w'amashanyarazi imbere ni mike cyane, bityo rero ingaruka z'inenge ya microtubules izagabanuka cyane, iki nigice cyambere cya monolithic SiC ihuriweho na amplifier chip yagenzuwe, ibicuruzwa byarangiye kandi bigenwa numusaruro uri hejuru cyane. kuruta inenge ya microtubules, kubwibyo, ishingiye ku musaruro wa SiC kandi ibikoresho bya Si na CaAs biragaragara ko bitandukanye. Chip ishingiye ku kugabanuka kwa tekinoroji ya NMOSFET. Impamvu nyamukuru nuko itwara ryimikorere itwara imiyoboro ya SiC MOSFETs iri hasi cyane. Kugirango tunonosore ubuso bwimikorere ya Sic, birakenewe kunonosora no kunoza uburyo bwa okiside yumuriro wa Sic.

Kaminuza ya Purdue yakoze imirimo myinshi kuri sisitemu ya SiC ihuriweho. Mu 1992, uruganda rwatunganijwe neza rushingiye kumuyoboro wa 6H-SIC NMOSFETs monolithic digital integrated circuit. Chip irimo kandi ntabwo ari irembo, cyangwa ntabwo ari irembo, ku irembo cyangwa ku irembo, kuri binary compte, hamwe na kimwe cya kabiri cyizunguruka kandi irashobora gukora neza mubushyuhe bwa 25 ° C kugeza 300 ° C. Mu 1995, indege ya mbere ya SiC MESFET Ics yahimbwe hakoreshejwe tekinoroji yo gutera inshinge za vanadium. Mugucunga neza ingano ya vanadium yatewe, SiC irashobora kuboneka.

Muri sisitemu ya logique ya sisitemu, imiyoboro ya CMOS irashimishije kuruta imiyoboro ya NMOS. Muri Nzeri 1996, hakozwe uruziga rwa mbere rwa 6H-SIC CMOS rukomatanyije. Igikoresho gikoresha inshinge N-gutondekanya no kubitsa oxyde, ariko kubera ibindi bibazo byakozwe, chip PMOSFETs yumubyigano wa voltage ni mwinshi cyane. Muri Werurwe 1997 mugihe ukora igisekuru cya kabiri SiC CMOS. Tekinoroji yo gutera P umutego hamwe nubushyuhe bwo gukura bwa oxyde oxyde. Umuvuduko ntarengwa wa PMOSEFTs wabonye mugutezimbere inzira ni -4.5V. Imirongo yose kuri chip ikora neza mubushyuhe bwicyumba kugeza kuri 300 ° C kandi ikoreshwa numuriro umwe, ushobora kuba ahantu hose kuva 5 kugeza 15V.

Hamwe nogutezimbere ubwiza bwa substrate wafer, hazakorwa byinshi kandi bitanga umusaruro mwinshi. Ariko, mugihe ibibazo bya SiC nibibazo byakemuwe ahanini, ubwizerwe bwibikoresho na pake bizaba ikintu nyamukuru kigira ingaruka kumikorere yubushyuhe bwo hejuru bwa SiC bwuzuzanya.