2 Ibisubizo byubushakashatsi no kuganira
2.1Epitaxial layerubunini n'uburinganire
Epitaxial layer umubyimba, kwibanda kuri doping hamwe nuburinganire nimwe mubipimo byingenzi byerekana ubuziranenge bwa waferi. Ubugari bushobora kugenzurwa neza, kwibanda kuri doping hamwe nuburinganire muri wafer nurufunguzo rwo kwemeza imikorere no guhoraho kwaIbikoresho bya SiC, hamwe na epitaxial layer yububiko hamwe nuburinganire bwa doping nabwo ni ishingiro ryingenzi ryo gupima ubushobozi bwibikorwa bya epitaxial.
Igishushanyo cya 3 cyerekana ubunini bwuburinganire no gukwirakwiza umurongo wa mm 150 na 200 mmSiC epitaxial wafers. Birashobora kugaragara ku gishushanyo ko epitaxial layer yubugari bwo kugabura umurongo ugereranije nu ngingo yo hagati ya wafer. Igihe cyo gufata epitaxial ni 600s, impuzandengo ya epitaxial layer yuburebure bwa 150mm ya epitaxial wafer ni 10.89 um, naho ubunini bwuburinganire ni 1.05%. Kubara, umuvuduko wubwiyongere bwa epitaxial ni 65.3 um / h, urwego rusanzwe rwihuta. Mugihe kimwe cyibikorwa bya epitaxial, epitaxial layer yuburebure bwa mm 200 ya epitaxial wafer ni 10.10 um, uburinganire bwuburinganire buri hagati ya 1.36%, naho umuvuduko wubwiyongere muri rusange ni 60.60 um / h, ukaba uri munsi gato ya 150 mm yo gukura kwa epitaxial. igipimo. Ibi ni ukubera ko hari igihombo kigaragara munzira iyo isoko ya silicon hamwe nisoko ya karubone itemba iva hejuru yicyumba cya reaction ikanyura hejuru ya wafer ikamanuka kumanuka wa chambre reaction, kandi ubuso bwa mm 200 ni bunini burenze mm 150. Gazi itembera hejuru ya mm 200 ya wafer intera ndende, kandi gaze isoko yakoreshejwe munzira ni myinshi. Ukurikije ko wafer ikomeza kuzunguruka, ubunini muri rusange bwa epitaxial layer bworoheje, bityo umuvuduko wo gukura uratinda. Muri rusange, uburebure bwa mm 150 na 200 mm ya epitaxial wafer ni byiza cyane, kandi ubushobozi bwibikorwa byibikoresho bushobora kuzuza ibisabwa nibikoresho byujuje ubuziranenge.
2.2 Epitaxial layer doping kwibanda hamwe
Igicapo ca 4 cerekana uburinganire bwa doping hamwe no gukwirakwiza umurongo wa mm 150 na 200 mmSiC epitaxial wafers. Nkuko bigaragara kuri iki gishushanyo, gukwirakwiza gukwirakwiza umurongo kuri epitaxial wafer ifite uburinganire bugaragara ugereranije hagati ya wafer. Uburinganire bwa doping bwa mm 150 na 200 mm epitaxial ni 2,80% na 2,66%, bishobora kugenzurwa muri 3%, nurwego rwiza kubikoresho mpuzamahanga bisa. Umuyoboro wa doping wibice bya epitaxial ukwirakwizwa muburyo bwa "W" ukurikije icyerekezo cya diametre, bigenwa cyane cyane numurima utemba wurukuta rutambitse rwurukuta rwa epitaxial itanura, kubera ko icyerekezo cyumuyaga cyerekezo gitambitse itanura rya epitaxial ituruka. ikirere cyinjira mu kirere (hejuru) kandi gitemba kiva kumanuka kumanuka muburyo bwa laminari unyuze hejuru ya wafer; kubera ko "inzira-yo kugabanuka" igipimo cya karubone (C2H4) kiri hejuru yicy'isoko rya silikoni (TCS), iyo wafer izunguruka, C / Si nyirizina hejuru ya wafer igenda igabanuka buhoro buhoro kuva ku nkombe kugera ikigo (isoko ya karubone iri hagati ni mike), ukurikije "igitekerezo cyo guhatanira umwanya wo guhatanira" C na N, kwibanda kwa doping hagati muri wafer bigenda bigabanuka buhoro buhoro ugana ku nkombe, kugirango ubone uburinganire bwiza, inkombe N2 yongeweho nkindishyi mugihe cyibikorwa bya epitaxial kugirango igabanye igabanuka ryikwirakwizwa rya doping kuva hagati kugeza ku nkombe, kugirango umurongo wa nyuma wa doping utanga umurongo werekana "W".
2.3 Inenge ya Epitaxial
Usibye umubyimba hamwe no kwibanda kuri doping, urwego rwo kugenzura inenge ya epitaxial nirwo rwego rwibanze rwo gupima ubuziranenge bwa waferi ya epitaxial kandi ni ikimenyetso cyingenzi cyerekana ubushobozi bwibikorwa bya epitaxial. Nubwo SBD na MOSFET zifite ibisabwa bitandukanye kubutunenge, inenge igaragara cyane ya morfologiya yubuso nkibintu bitonyanga ibitonyanga, inenge ya mpandeshatu, inenge ya karoti, inenge za comet, nibindi bisobanurwa nkubwicanyi bwibikoresho bya SBD na MOSFET. Amahirwe yo kunanirwa na chip arimo inenge ni menshi, bityo kugenzura umubare winenge zica ni ngombwa cyane mukuzamura umusaruro wa chip no kugabanya ibiciro. Igicapo 5 cerekana ikwirakwizwa ryinenge zica za mm 150 na 200 mm SiC epitaxial wafers. Mugihe hagaragaye ko nta busumbane bugaragara mubipimo bya C / Si, inenge ya karoti nudusimba twa comet birashobora kuvaho cyane, mugihe inenge zitonyanga nudusembwa twa mpandeshatu bifitanye isano no kugenzura isuku mugihe cyo gukora ibikoresho bya epitaxial, urwego rwanduye rwa grafite ibice muri reaction ya chambre, hamwe nubwiza bwa substrate. Kuva ku mbonerahamwe ya 2, birashobora kugaragara ko umwicanyi ufite inenge ya mm 150 na 200 mm ya epitaxial wafers ashobora kugenzurwa mubice 0.3 / cm2, urwego rukaba rwiza kubwoko bumwe bwibikoresho. Urwego rwica inenge rwurwego rwa 150 mm epitaxial wafer iruta iya 200 mm ya epitaxial wafer. Ni ukubera ko gahunda yo gutegura substrate ya mm 150 ikuze cyane kuruta iyo mm 200, ubwiza bwa substrate nibyiza, kandi urwego rwo kugenzura umwanda wa 150 mm grafite reaction ya chambre ni nziza.
2.4 Epitaxial wafer yubuso bukabije
Igishushanyo cya 6 cyerekana amashusho ya AFM yubuso bwa mm 150 na 200 mm SiC epitaxial wafers. Birashobora kugaragara uhereye ku gishushanyo ko imizi yubuso isobanura kwaduka kwaduka Ra ya mm 150 na 200 mm ya epitaxial wafers ni 0,129 nm na 0.113 nm, naho ubuso bwa epitaxial bugenda neza nta kintu kigaragara cyo guteranya intambwe. Iyi phenomenon yerekana ko imikurire yicyiciro cya epitaxial ihora ikomeza uburyo bwo gukura kwintambwe mugihe cyose cya epitaxial, kandi nta guteranya intambwe bibaho. Birashobora kugaragara ko ukoresheje uburyo bwiza bwo gukura epitaxial, uburyo bworoshye bwa epitaxial burashobora kuboneka kuri mm 150 na 200 mm munsi yubutaka buke.
3 Umwanzuro
Mm 150 na 200 mm 4H-SiC wafita ya epitaxial ya wafers yateguwe neza kubutaka bwo murugo hakoreshejwe ibikoresho byo gukura byonyine bya mm 200 SiC ya epitaxial, kandi hateguwe inzira ya epitaxial homogeneous ikwiranye na mm 150 na 200 mm. Iterambere rya epitaxial rirashobora kurenza 60 μ m / h. Mugihe wujuje umuvuduko mwinshi epitaxy isabwa, ubwiza bwa epitaxial wafer nibyiza. Ubunini bwuburinganire bwa mm 150 na 200 mm SiC epitaxial wafers irashobora kugenzurwa muri 1.5%, uburinganire bwikigereranyo ntiburi munsi ya 3%, ubucucike bwinenge bwica buri munsi ya 0.3 / cm2, naho epitaxial surface roughness root isobanura kare Ra ni munsi ya 0.15 nm. Ibipimo ngenderwaho byerekana epitaxial wafers biri murwego rwo hejuru muruganda.
Inkomoko: Inganda zikoranabuhanga ibikoresho byihariye
Umwanditsi: Xie Tianle, Li Ping, Yang Yu, Gong Xiaoliang, Ba Sai, Chen Guoqin, Wan Shengqiang
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Igihe cyo kohereza: Nzeri-04-2024