Kugeza ubu, inganda za SiC zirahinduka kuva kuri mm 150 (santimetero 6) kugera kuri mm 200 (santimetero 8). Kugirango uhuze ibyifuzo byihutirwa binini binini, bifite ubuziranenge bwa SiC homoepitaxial wafers mu nganda, 150mm na 200mm4H-SiC wafers ya homoepitaxialbyateguwe neza kubutaka bwimbere hifashishijwe ibikoresho byiterambere byigenga 200mm SiC. Homoepitaxial inzira ikwiranye na 150mm na 200mm yatejwe imbere, aho umuvuduko wubwiyongere bwa epitaxial ushobora kurenza 60um / h. Mugihe uhuye na epitaxy yihuta cyane, ubwiza bwa epitaxial wafer nibyiza. Ubunini bwuburinganire bwa mm 150 na 200 mmSiC epitaxial wafersirashobora kugenzurwa muri 1.5%, uburinganire bwibanze ntiburi munsi ya 3%, ubucucike bwinenge bwica buri munsi ya 0.3 ibice / cm2, naho epitaxial surface roughness root bivuze kwaduka Ra iri munsi ya 0.15nm, kandi ibipimo byose byingenzi biri kuri urwego rwo hejuru rwinganda.
Silicon Carbide (SiC)ni umwe mu bahagarariye ibikoresho bya semiconductor ya gatatu. Ifite ibiranga imbaraga zo kumeneka cyane, imbaraga nziza zumuriro, umuvuduko mwinshi wa electron, umuvuduko mwinshi, hamwe no kurwanya imirasire ikomeye. Yaguye cyane ubushobozi bwo gutunganya ingufu zibikoresho byamashanyarazi kandi irashobora kuzuza ibisabwa bya serivise yigihe kizaza cyibikoresho bya elegitoroniki byamashanyarazi kubikoresho bifite ingufu nyinshi, ubunini buto, ubushyuhe bwinshi, imirasire myinshi nibindi bihe bikabije. Irashobora kugabanya umwanya, kugabanya gukoresha ingufu no kugabanya ubukonje bukenewe. Yazanye impinduka zimpinduramatwara mumodoka nshya yingufu, ubwikorezi bwa gari ya moshi, gride yubwenge nizindi nzego. Kubwibyo, silicon karbide semiconductor yamenyekanye nkibikoresho byiza bizayobora igisekuru kizaza cyibikoresho bya elegitoroniki bifite ingufu nyinshi. Mu myaka yashize, tubikesheje inkunga ya politiki y’igihugu yo guteza imbere inganda zikoresha igice cya gatatu cy’amashanyarazi, ubushakashatsi n’iterambere ndetse n’ubwubatsi bwa sisitemu y’inganda zikoreshwa mu bikoresho bya mm 150 bya SiC byarangiye ahanini mu Bushinwa, kandi umutekano w’uruganda rukora byemewe. Kubwibyo, intumbero yinganda yagiye ihinduka buhoro buhoro kugenzura ibiciro no kuzamura imikorere. Nkuko bigaragara mu mbonerahamwe ya 1, ugereranije na mm 150, mm 200 SiC ifite igipimo cyo hejuru cyo gukoresha, kandi umusaruro wa chip wa wafer imwe ushobora kwiyongera inshuro 1.8. Nyuma yikoranabuhanga rimaze gukura, igiciro cyo gukora chip imwe gishobora kugabanukaho 30%. Iterambere ry'ikoranabuhanga rya mm 200 ni uburyo butaziguye bwo "kugabanya ibiciro no kongera imikorere", kandi ni nurufunguzo rw'inganda zikoresha amashanyarazi mu gihugu cyanjye "gukora parallel" cyangwa se "kuyobora".
Bitandukanye nibikorwa bya Si ibikoresho,Ibikoresho byamashanyarazi bya SiCbyose biratunganijwe kandi byateguwe hamwe na epitaxial layers nkibuye ryimfuruka. Epitaxial wafers nibikoresho byibanze kubikoresho byamashanyarazi ya SiC. Ubwiza bwa epitaxial layer bugena neza umusaruro wigikoresho, kandi igiciro cyacyo kingana na 20% yikiguzi cyo gukora chip. Kubwibyo, gukura kwa epitaxial ningenzi ihuza hagati mubikoresho byamashanyarazi bya SiC. Urwego rwo hejuru rwibikorwa bya epitaxial rugenwa nibikoresho bya epitaxial. Kugeza ubu, impamyabumenyi y’ibikoresho bya epitaxial ya 150mm ya SiC mu Bushinwa irasa naho iri hejuru, ariko imiterere rusange ya 200mm iri inyuma yurwego mpuzamahanga icyarimwe. Kubwibyo rero, kugirango dukemure ibibazo byihutirwa nibibazo byingutu byinganda nini, zujuje ubuziranenge epitaxial ibikoresho byo guteza imbere inganda zo mu bwoko bwa semiconductor zo mu gihugu cya gatatu, iyi nyandiko irerekana ibikoresho bya mm 200 bya SiC byateye imbere mugihugu cyanjye, kandi yiga inzira ya epitaxial. Mugutezimbere ibipimo byubushyuhe nkubushyuhe bwibikorwa, umuvuduko wa gazi itwara, igipimo cya C / Si, nibindi, uburinganire bwibanze <3%, umubyimba udahuje <1.5%, ubukana Ra <0.2 nm nubucucike bwica <0.3 ingano / cm2 ya mm 150 na 200 mm SiC epitaxial wafers hamwe na mm 200 ya silicon karbide epitaxial itanura yigenga. Urwego rutunganya ibikoresho rushobora guhaza ibikenewe byogukora ibikoresho byiza bya SiC.
1 Ubushakashatsi
1.1 Ihame ryaSiC epitaxialinzira
Iterambere rya 4H-SiC homoepitaxial ririmo ahanini intambwe 2 zingenzi, arizo, ubushyuhe bwo hejuru-ahantu hamwe na 4H-SiC substrate hamwe nuburyo bwo guta imyuka ya chimique. Intego nyamukuru ya substrate in-situ etching ni ugukuraho kwangirika kwubutaka bwa substrate nyuma yo guswera wafer, ibisigazwa bisigara bisigara, ibice na oxyde, hamwe nuburyo busanzwe bwa intambwe ya atome burashobora gushingwa hejuru yubutaka. Mubisanzwe muburyo bukorerwa mukirere cya hydrogène. Ukurikije ibisabwa nyirizina, inzira ya gaze yingoboka nayo irashobora kongerwamo, nka hydrogène chloride, propane, Ethylene cyangwa silane. Ubushuhe bwa hydrogène iri muri-hejuru muri rusange hejuru ya 1 600 and, kandi umuvuduko wicyumba cya reaction usanga ugenzurwa munsi ya 2 × 104 Pa mugihe cyo gutera.
Nyuma yubuso bwa substrate bukorwa nuburyo bwo gutondeka, bwinjira muburyo bwo hejuru bwoherejwe nubushyuhe bwo mu kirere bwa chimique, ni ukuvuga isoko yo gukura (nka Ethylene / propane, TCS / silane), isoko ya doping (n-ubwoko bwa doping source azote , p-ubwoko bwa doping isoko TMAl), na gaze yingoboka nka hydrogène chloride ijyanwa mubyumba byabigenewe binyuze mumigezi minini ya gaze itwara (ubusanzwe hydrogen). Iyo gazi imaze gukora mubyumba byubushyuhe bwo hejuru, igice cyibibanziriza gikora chimique na adsorbs hejuru ya wafer, hamwe na kirisiti imwe imwe ya 4H-SiC epitaxial igizwe na doping yihariye, ubunini bwihariye, hamwe nubuziranenge bwo hejuru. hejuru yubutaka ukoresheje kristu imwe-kristal 4H-SiC substrate nkicyitegererezo. Nyuma yimyaka yubushakashatsi bwa tekiniki, tekinoroji ya 4H-SiC homoepitaxial yarakuze cyane kandi ikoreshwa cyane mubikorwa byinganda. Ikoreshwa rya tekinoroji ya 4H-SiC homoepitaxial kwisi yose ifite ibintu bibiri biranga:
. yashyizwe kuri substrate muburyo bwo gukura-intambwe yo gukura. Intangiriro ya 4H-SiC gukura kwa homoepitaxial yakoresheje substrate nziza ya kirisiti, ni ukuvuga indege ya <0001> Si yo gukura. Ubucucike bwintambwe za atome hejuru yubutaka bwiza bwa kristal substrate ni buke kandi amaterasi aragutse. Iterambere ryibice bibiri byoroshye kugaragara mugihe cya epitaxy yo gukora 3C kristal ya SiC (3C-SiC). Mugukata off-axis, hejuru-yubucucike, ubugari bwamaterasi yubugari bwa atome intambwe irashobora gutangirwa hejuru yubutaka bwa 4H-SiC <0001>, kandi ibyamamajwe byamamaza birashobora kugera neza kumwanya wintambwe ya atome hamwe ningufu nkeya ugereranije no gukwirakwiza hejuru. . Ku ntambwe, icyerekezo kibanziriza atom / molekulari yo guhuza imyanya irihariye, kuburyo muburyo bwo gukura kwintambwe yo gukura, epitaxial layer irashobora kuragwa neza Si-C inshuro ebyiri za atomic layer ikurikirana ya substrate kugirango ikore kristu imwe hamwe na kristu imwe icyiciro nka substrate.
(2) Iterambere ryihuse epitaxial igerwaho mugutangiza isoko ya chlorine irimo chlorine. Mubisanzwe sisitemu yo kubika imyuka ya SiC, silane na propane (cyangwa Ethylene) nisoko nyamukuru yo gukura. Muburyo bwo kongera umuvuduko wubwiyongere mukwongera umuvuduko winkomoko yiterambere, mugihe umuvuduko wa equilibrium igice cyigice cya silicon ukomeje kwiyongera, biroroshye gukora cluster ya silicon hamwe na gaze ya gazi ya homogeneous, ibyo bikaba bigabanya cyane igipimo cyimikoreshereze ya inkomoko ya silicon. Imiterere ya cluster ya silicon igabanya cyane iterambere ryikura rya epitaxial. Muri icyo gihe, cluster ya silicon irashobora guhungabanya imikurire yintambwe kandi igatera nucleation. Mu rwego rwo kwirinda nucleaire ya gaz ya homogeneous no kongera umuvuduko wubwiyongere bwa epitaxial, kwinjiza amasoko ya silicon ashingiye kuri chlorine kuri ubu nuburyo bwibanze bwo kongera umuvuduko wa epitaxial ya 4H-SiC.
1.2 200 mm (8-santimetero) ibikoresho bya epitaxial ya SiC nuburyo bwo gutunganya
Ubushakashatsi bwasobanuwe muri iyi nyandiko byose bwakorewe kuri mm 150/200 (6/8-santimetero) zihuza monolithic horizontal urukuta rushyushye ibikoresho bya epitaxial SiC ibikoresho byigenga byateguwe n'ikigo cya 48 cy'Ubushinwa Ikoranabuhanga rya Tekinoroji. Itanura rya epitaxial rishyigikira byimazeyo ya wafer yikuramo no gupakurura. Igishushanyo 1 nigishushanyo mbonera cyimiterere yimbere yimbere yicyumba cyibikorwa bya epitaxial. Nkuko bigaragara ku gishushanyo cya 1, urukuta rwinyuma rwicyumba cya reaction ni inzogera ya quartz ifite interineti ikonjesha amazi, kandi imbere yinzogera nicyumba cyubushyuhe bwo hejuru, kigizwe na karubone yumuriro wa karubone, ubuziranenge-bwinshi umwobo udasanzwe wa grafite, gaze ya gazi ireremba izunguruka, nibindi. Inzogera ya quartz yose itwikiriwe na coil ya induction ya silindrike, kandi icyumba cyitwara imbere mu nzogera gishyuha amashanyarazi hakoreshejwe amashanyarazi akoresheje amashanyarazi. Nkuko bigaragara ku gishushanyo cya 1 (b), gaze yabatwara, gaze ya reaction, na gaze ya doping byose bitembera hejuru ya wafer mumigezi ya laminari itambitse iva hejuru yicyumba cya reaction igana hepfo yicyumba cya reaction kandi isohoka mumurizo gaze. Kugirango umenye neza muri wafer, wafer itwarwa nikirere kireremba ikirere gihora kizunguruka mugihe cyibikorwa.
Substrate ikoreshwa mubigeragezo ni ubucuruzi bwa mm 150, mm 200 (santimetero 6, santimetero 8) Trichlorosilane (SiHCl3, TCS) na Ethylene (C2H4) bikoreshwa nkisoko nyamukuru yo gukura mu igeragezwa ryibikorwa, muri byo TCS na C2H4 zikoreshwa nkisoko ya silicon nisoko ya karubone, azote ifite isuku nyinshi (N2) ikoreshwa nka n- ubwoko bwa doping isoko, na hydrogen (H2) ikoreshwa nka gaze ya dilution na gaze itwara. Ubushyuhe buringaniye bwa epitaxial ni 1 600 ~ 1 660 ℃, umuvuduko wibikorwa ni 8 × 103 ~ 12 × 103 Pa, naho umuvuduko wa gazi ya H2 ni 100 ～ 140 L / min.
1.3 Kwipimisha Epitaxial wafer no kuranga
Fourier infrared spectrometer (uruganda rukora ibikoresho Thermalfisher, moderi iS50) hamwe na testi yibizamini bya mercure (uruganda rukora ibikoresho Semilab, moderi 530L) byakoreshejwe mu kwerekana uburyo bwo gukwirakwiza no gukwirakwiza umubyimba wa epitaxial hamwe na doping concentration; ubunini hamwe na doping yibanze kuri buri ngingo murwego rwa epitaxial byagenwe no gufata amanota kumurongo wa diameter uhuza umurongo usanzwe wuruhande rwibanze kuri 45 ° hagati ya wafer hamwe no gukuraho mm 5. Kuri wafer ya mm 150, hafashwe amanota 9 kumurongo umwe wa diameter (diametero ebyiri zari perpendicular kuri mugenzi we), naho kuri wafer ya mm 200, hafashwe amanota 21, nkuko bigaragara ku gishushanyo cya 2. Microscope yingufu za kirimbuzi (uruganda rukora ibikoresho) Bruker, icyitegererezo Dimension Icon) yakoreshejwe muguhitamo 30 mkm × 30 mkm mu gice cyagati hamwe nu gice cyuruhande (gukuraho mm 5 zuruhande) cya epitaxial wafer kugirango hamenyekane ubukana bwubuso bwa epitaxial; inenge z'igice cya epitaxial zapimwe hifashishijwe ibipimo byo gupima ubuso (uruganda rukora ibikoresho Ubushinwa Electronics Imashusho ya 3D yaranzwe na sensor ya radar (moderi ya Mars 4410 pro) yo muri Kefenghua.
Igihe cyo kohereza: Nzeri-04-2024