Oxidized ingano ihagaze hamwe na tekinoroji yo gukura epitaxial-Ⅱ

3. Gukura kwa Epitaxial yoroheje
Substrate itanga ubufasha bwumubiri cyangwa igikoresho cyogukoresha ibikoresho bya ingufu za Ga2O3. Igice cyingenzi gikurikiraho ni umuyoboro cyangwa epitaxial layer ikoreshwa mukurwanya voltage no gutwara. Kugirango wongere imbaraga zo kumeneka no kugabanya ubukana bwumuvuduko, uburebure bugenzurwa hamwe nubushakashatsi bwa doping, kimwe nubwiza bwibintu byiza, nibisabwa bimwe. Ubwiza bwo hejuru bwa Ga2O3 epitaxial busanzwe bubikwa hakoreshejwe molekile beam epitaxy (MBE), icyuma kama kama kama kama (MOCVD), icyuka cya halide (HVPE), icyuma cya lazeri (PLD), hamwe nubuhanga bwa CVD bushingiye kububiko.

Imbonerahamwe 2 Tekinoroji ya epitaxial ihagarariye

3.1 MBE uburyo
Ikoranabuhanga rya MBE rizwi cyane kubera ubushobozi bwo gukura amafirime yo mu rwego rwo hejuru, adafite inenge β-Ga2O3 hamwe na doping ishobora kugenzurwa bitewe n’ibidukikije byangiza cyane kandi byera cyane. Nkigisubizo, yabaye imwe mubushakashatsi bwize cyane kandi bushobora kugurishwa β-Ga2O3 tekinoroji yo kubika firime. Mubyongeyeho, uburyo bwa MBE nabwo bwateguye neza uburyo bwiza bwo hejuru, butagabanijwe buke butandukanye β- (AlXGa1-X) 2O3 / Ga2O3 ya firime yoroheje. MBE irashobora gukurikirana imiterere yubuso hamwe na morphologie mugihe nyacyo hamwe na atome igaragara neza ukoresheje imbaraga zo kwerekana imbaraga za electronique (RHEED). Nyamara, films-Ga2O3 firime ikura hifashishijwe ikoranabuhanga rya MBE iracyafite imbogamizi nyinshi, nkumuvuduko muke muto hamwe nubunini bwa firime. Ubushakashatsi bwerekanye ko umuvuduko wubwiyongere ukurikirana (010)> (001)> (- 201)> (100). Mugihe gito cya Ga-gikungahaye kuri 650 kugeza 750 ° C, β-Ga2O3 (010) yerekana imikurire myiza hamwe nubuso bworoshye kandi bwiyongera cyane. Ukoresheje ubu buryo, ep-Ga2O3 epitaxy yagezweho neza hamwe na RMS ya 0.1 nm. β-Ga2O3 Mubidukikije bikungahaye kuri Ga, firime MBE ikura mubushyuhe butandukanye irerekanwa mumashusho. Novel Crystal Technology Inc yakoze neza cyane 10 × 15mm2 β-Ga2O3MBE wafers. Zitanga ubuziranenge (010) bwerekejwe β-Ga2O3 imwe ya kristu ya substrate hamwe nubunini bwa 500 mm na XRD FWHM munsi yamasegonda 150 arc. Substrate ni Sn ikoporora cyangwa Fe ikoporora. Substrate ya Sn-dope ifite insimburangingo ya doping ya 1E18 kugeza 9E18cm - 3, mugihe insimburangingo yicyuma ikingira igice ifite insimburangingo irenga cm 10E10 Ω cm.

3.2 Uburyo bwa MOCVD
MOCVD ikoresha ibyuma kama nkibikoresho byabanjirije gukura firime yoroheje, bityo bikagera ku bicuruzwa binini by’ubucuruzi. Iyo ukura Ga2O3 ukoresheje uburyo bwa MOCVD, trimethylgallium (TMGa), triethylgallium (TEGa) na Ga (dipentyl glycol formate) mubisanzwe bikoreshwa nkisoko ya Ga, mugihe H2O, O2 cyangwa N2O bikoreshwa nkisoko ya ogisijeni. Gukura ukoresheje ubu buryo muri rusange bisaba ubushyuhe bwinshi (> 800 ° C). Iri koranabuhanga rifite ubushobozi bwo kugera ku bwikorezi buke hamwe n’ubushyuhe bwo hejuru kandi buke buke bwa elegitoronike, bityo rero bifite akamaro kanini mugushira mubikorwa ibikoresho byimbaraga β-Ga2O3. Ugereranije nuburyo bwo gukura bwa MBE, MOCVD ifite inyungu zo kugera ku kigero cyo hejuru cyane cyiterambere rya firime β-Ga2O3 bitewe nibiranga ubwiyongere bukabije bwubushyuhe hamwe nubushakashatsi bwimiti.

Igicapo 7 β-Ga2O3 (010) AFM ishusho

Igicapo 8 β-Ga2O3 Isano iri hagati yimpapuro zurwanya zapimwe na Hall hamwe nubushuhe

3.3 Uburyo bwa HVPE
HVPE ni tekinoroji ya epitaxial ikuze kandi yakoreshejwe cyane mukuzamuka kwa epitaxial ya semiconductor ya III-V. HVPE izwiho igiciro gito cyumusaruro, umuvuduko wubwiyongere bwihuse, hamwe nubunini bwa firime. Twabibutsa ko HVPEβ-Ga2O3 ikunze kwerekana morfologiya yubuso bukabije hamwe nubucucike bwinshi bwinenge hamwe nibyobo. Kubwibyo, imiti nogukoresha imashini isabwa mbere yo gukora igikoresho. HVPE tekinoroji ya ep-Ga2O3 epitaxy isanzwe ikoresha gaze ya GaCl na O2 nkibibanziriza kugirango iteze imbere ubushyuhe bwo hejuru bwa matrike (001) β-Ga2O3. Igicapo 9 cerekana imiterere yubuso nubwiyongere bwa firime epitaxial nkigikorwa cyubushuhe. Mu myaka yashize, Ubuyapani Novel Crystal Technology Inc bwageze ku ntera ishimishije mu bucuruzi muri HVPE homoepitaxial β-Ga2O3, hamwe na epitaxial layer yuburebure bwa 5 kugeza kuri 10 mm na wafer ingana na santimetero 2 na 4. Hiyongereyeho, 20 mm z'uburebure bwa HVPE β-Ga2O3 waferi ya homoepitaxial yakozwe na China Electronics Technology Group Corporation nayo yinjiye mubucuruzi.

Igicapo 9 Uburyo bwa HVPE β-Ga2O3

3.4 Uburyo bwa PLD
Tekinoroji ya PLD ikoreshwa cyane cyane kubitsa firime ya okiside igoye hamwe na heterostructures. Mugihe cyo gukura kwa PLD, ingufu za fotone zihujwe nibikoresho bigenewe binyuze muri electron. Bitandukanye na MBE, ibice bya PLD bituruka kumirasire ya laser ifite ingufu nyinshi cyane (> 100 eV) hanyuma bigashyirwa kuri substrate ishyushye. Ariko, mugihe cyo gukuraho, uduce tumwe na tumwe twinshi dufite imbaraga zigira ingaruka ku buryo butaziguye, bigatera inenge bityo bikagabanya ubwiza bwa firime. Kimwe nuburyo bwa MBE, RHEED irashobora gukoreshwa mugukurikirana imiterere yubuso hamwe na morfologiya yibikoresho mugihe nyacyo mugihe cyo kubika PLD β-Ga2O3, bigatuma abashakashatsi babona neza amakuru yiterambere. Uburyo bwa PLD buteganijwe gukura cyane firime-Ga2O3, bigatuma iba igisubizo cyiza cya ohmic mumashanyarazi ya Ga2O3.

Igicapo 10 AFM ishusho ya Si ikoporora Ga2O3

3.5 Uburyo bwa MIST-CVD
MIST-CVD ni tekinoroji yoroheje kandi ihenze cyane tekinoroji yo gukura ya firime. Ubu buryo bwa CVD burimo reaction yo gutera sporomor ya atomize kuri substrate kugirango igere kuri firime yoroheje. Nyamara, kugeza ubu, Ga2O3 yakuze ikoresheje igihu CVD iracyafite ibikoresho byiza byamashanyarazi, bisiga umwanya munini wo kunoza no gutezimbere ejo hazaza.