Inkomoko yizina epitaxial wafer
Ubwa mbere, reka tumenyekanishe igitekerezo gito: gutegura wafer birimo amahuriro abiri yingenzi: gutegura substrate hamwe na epitaxial process. Substrate ni wafer ikozwe muri semiconductor imwe ya kristu. Substrate irashobora kwinjira muburyo butaziguye bwo gukora wafer kugirango ikore ibikoresho bya semiconductor, cyangwa irashobora gutunganywa na epitaxial inzira kugirango itange epitaxial wafers. Epitaxy bivuga inzira yo gukura urwego rushya rwa kirisiti imwe kuri sisitemu imwe ya kirisiti yatunganijwe neza mugukata, gusya, gusya, nibindi. ibintu bitandukanye (homogeneous) epitaxy cyangwa heteroepitaxy). Kuberako urwego rushya rwa kirisiti rwagutse kandi rugakura ukurikije icyiciro cya kristu ya substrate, byitwa epitaxial layer (ubunini busanzwe ni microne nkeya, bifata silikoni nkurugero: ibisobanuro byikura rya silicon epitaxial iri kumurongo umwe wa silicon kristu ya substrate hamwe nicyerekezo runaka cya kristu Icyerekezo cya kirisiti ifite imiterere myiza ya lattice hamwe nuburwanya butandukanye hamwe nubunini hamwe nicyerekezo kimwe cya kristu), naho substrate hamwe na epitaxial layer yitwa an epitaxial wafer (epitaxial wafer = epitaxial layer + substrate). Iyo igikoresho gikozwe kuri epitaxial layer, byitwa epitaxy nziza. Niba igikoresho gikozwe kuri substrate, byitwa revers epitaxy. Muri iki gihe, epitaxial layer igira uruhare gusa.
Wafer
Uburyo bwo gukura Epitaxial
Molecular beam epitaxy (MBE): Ni tekinoroji yo gukura ya semiconductor epitaxial ikorwa mugihe cya ultra-high vacuum conditions. Muri ubu buhanga, ibikoresho byatanzwe biva mu kirere mu buryo bwa beam ya atome cyangwa molekile hanyuma bigashyirwa kuri substrate ya kristaline. MBE ni tekinoroji isobanutse kandi igenzurwa na semiconductor yoroheje ya tekinoroji yo gukura ya firime ishobora kugenzura neza ubunini bwibintu byabitswe kurwego rwa atome.
Ibyuma kama CVD (MOCVD): Mubikorwa bya MOCVD, gaze kama na gaze ya hydride gaze irimo ibintu bisabwa ihabwa substrate ku bushyuhe bukwiye, ikorerwa imiti kugirango itange ibikoresho bya semiconductor ikenewe, kandi bigashyirwa kuri substrate kuri, mugihe ibice bisigaye nibicuruzwa byasohotse.
Icyuka cya Vapor epitaxy (VPE): Epitaxy ya Vapor phase ni tekinoroji yingenzi ikoreshwa mugukora ibikoresho bya semiconductor. Ihame shingiro nugutwara imyuka yibintu byibanze cyangwa ibivanze muri gaze yikigo, no kubitsa kristu kuri substrate binyuze mumiti.
Ni ibihe bibazo inzira epitaxy ikemura?
Gusa igice kinini cyibikoresho bya kirisiti ntigishobora guhaza ibikenerwa byo gukora ibikoresho bitandukanye bya semiconductor. Noneho rero, gukura kwa epitaxial, tekinoroji yoroheje yo gukura yibikoresho bya kristu, byakozwe mumpera za 1959. None se ni uruhe ruhare rwihariye ikoranabuhanga rya epitaxy rifite mugutezimbere ibikoresho?
Kuri silicon, mugihe tekinoroji yo gukura ya silicon epitaxial yatangiriye, mubyukuri byari igihe kitoroshye cyo gukora silicon yumurongo mwinshi hamwe na tristoriste ikomeye. Duhereye ku mahame ya tristoriste, kugirango ubone inshuro nyinshi nimbaraga nyinshi, imbaraga zo gusenyuka zumwanya wikusanyirizo zigomba kuba ndende kandi urukurikirane rwikurikiranya rugomba kuba ruto, ni ukuvuga ko igitonyanga cyuzuye cyuzuye kigomba kuba gito. Iyambere isaba ko ibintu birwanya ibikoresho byakusanyirijwe bigomba kuba byinshi, mugihe ibyanyuma bisaba ko kurwanya ibikoresho byakusanyirijwe bigomba kuba bike. Intara zombi ziravuguruzanya. Niba umubyimba wibintu mukarere kegeranya wagabanutse kugirango ugabanye urukurikirane rwimikorere, wafer ya silicon izaba yoroheje cyane kandi yoroshye kuburyo itunganijwe. Niba kurwanya ibintu bigabanutse, bizavuguruza icyifuzo cya mbere. Ariko, iterambere ryikoranabuhanga rya epitaxial ryaragenze neza. byakemuye iki kibazo.
Igisubizo: Gukura epitaxial ep-epistial anti-resistance kurwego rwo hejuru cyane, hanyuma ukore igikoresho kumurongo wa epitaxial. Iyi epitaxial epistaxial irwanya cyane ko umuyoboro ufite imbaraga nyinshi zo gusenyuka, mugihe insimburangingo nkeya nayo igabanya ubukana bwa substrate, bityo bikagabanya umuvuduko wa voltage wuzuye, bityo bikemura amakimbirane hagati yombi.
Hiyongereyeho, tekinoroji ya epitaxy nka epapasi yicyuka na epitaxy ya epitaxy ya GaAs nibindi bikoresho bya III-V, II-VI nibindi bikoresho bya semiconductor hamwe nabyo byatejwe imbere cyane kandi byabaye ishingiro ryibikoresho byinshi bya microwave, ibikoresho bya optoelectronic, power Nubuhanga bwingirakamaro muburyo bwo gukora ibikoresho, cyane cyane gukoresha neza urumuri rwa molekuline hamwe nicyuma kama cyumuyaga wa epitaxy tekinoroji muburyo bworoshye, superlattices, amariba ya kwant, superlattices iremereye, hamwe na atomic-urwego ruto rworoshye epitaxy, nintambwe nshya mubushakashatsi bwa semiconductor. Iterambere ry "ingufu zumukandara" murwego rwashizeho urufatiro rukomeye.
Mubikorwa bifatika, ibikoresho bigari bya semiconductor ibikoresho hafi ya byose bikozwe kumurongo wa epitaxial, kandi wafer ya silicon carbide wafer ubwayo ikora nka substrate gusa. Kubwibyo, kugenzura epitaxial layer ni igice cyingenzi cyinganda nini ya semiconductor inganda.
Ubuhanga 7 bwingenzi mubuhanga bwa epitaxy
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2. Ubwoko bwa N (P) epitaxial layer irashobora guhingwa muburyo bwubwoko bwa P (N) kugirango habeho PN ihuza. Ntakibazo cyindishyi mugihe ukoresheje uburyo bwo gukwirakwiza gukora PN ihuza kumurongo umwe wa kristu.
3. Hamwe na tekinoroji ya mask, gukura kwa epitaxial guhitamo gukorerwa ahantu hagenwe, bigashyiraho uburyo bwo kubyara imiyoboro ihuriweho hamwe nibikoresho byihariye.
4. Ubwoko hamwe nibitekerezo bya doping birashobora guhinduka ukurikije ibikenewe mugihe cyo gukura kwa epitaxial. Impinduka yibitekerezo irashobora guhinduka gitunguranye cyangwa guhinduka gahoro.
5. Irashobora gukura itandukanye, ibice byinshi, ibice byinshi hamwe na ultra-thin ibice bifite ibice bihinduka.
6. Iterambere rya Epitaxial rirashobora gukorwa ku bushyuhe buri munsi yo gushonga kwibintu, umuvuduko wo gukura urashobora kugenzurwa, kandi gukura kwa epitaxial yububyimbye bwa atome birashobora kugerwaho.
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Igihe cyo kohereza: Gicurasi-13-2024