Kugeza ubu,silicon karbide (SiC)ni ibikoresho bya ceramic bitwara ibintu byigwa cyane murugo no mumahanga. Amashanyarazi yubushyuhe bwa SiC ni menshi cyane, kandi na kristu zimwe zishobora kugera kuri 270W / mK, isanzwe ari umuyobozi mubikoresho bidatwara. Kurugero, ikoreshwa ryumuriro wa SiC rirashobora kugaragara mubikoresho byububiko bwibikoresho bya semiconductor, ibikoresho bya ceramique yumuriro mwinshi, ubushyuhe hamwe namasahani yo gushyushya gutunganya semiconductor, ibikoresho bya capsule kumavuta ya kirimbuzi, nimpeta zifunga gaze kuri pompe compressor.
Gushyira mu bikorwasilicon karbidemu gice cya kabiri
Gusya disiki n'ibikoresho ni ibikoresho byingenzi byo gutunganya umusaruro wa silicon wafer mu nganda za semiconductor. Niba insyo yo gusya ikozwe mubyuma cyangwa ibyuma bya karubone, ubuzima bwayo ni bugufi kandi coefficente yo kwagura ubushyuhe ni nini. Mugihe cyo gutunganya wafer ya silicon, cyane cyane mugihe cyo gusya byihuse cyangwa gusya, kubera kwambara no guhindura ubushyuhe bwa disiki yo gusya, uburinganire nuburinganire bwa wafer ya silicon biragoye kubyemeza. Gusya disiki ikozwesilicon carbide ceramicsifite imyenda mike kubera ubukana bwayo bwinshi, kandi coefficente yo kwagura ubushyuhe bwayo irasa cyane nkiya waferi ya silicon, bityo irashobora kuba hasi kandi igasukurwa kumuvuduko mwinshi.
Byongeye kandi, iyo wafer ya silicon ikozwe, bakeneye gukorerwa ubushyuhe bwo hejuru kandi akenshi bitwarwa hakoreshejwe ibikoresho bya karubide ya silicon. Zirinda ubushyuhe kandi ntizisenya. Diyama imeze nka karubone (DLC) hamwe nandi mavuta ashobora gukoreshwa hejuru kugirango yongere imikorere, agabanye ibyangiritse, kandi birinde kwanduza.
Byongeye kandi, nkuhagarariye igisekuru cya gatatu cyagutse-igice cya semiconductor ibikoresho, silicon karbide ibikoresho bimwe bya kristaliste bifite imitungo nkubugari bunini bwa bande (hafi inshuro 3 za Si), ubushyuhe bukabije bwumuriro (hafi inshuro 3.3 nubwa Si cyangwa inshuro 10 irya GaAs), igipimo cyo kwimuka cya electron nyinshi (hafi inshuro 2,5 z'icya Si) n'umuriro w'amashanyarazi ucika cyane (hafi inshuro 10 za Si cyangwa inshuro 5 za GaAs). Ibikoresho bya SiC bigizwe nubusembwa bwibikoresho bya semiconductor gakondo mubikorwa bifatika kandi bigenda bihinduka inzira nyamukuru yingufu za semiconductor.
Icyifuzo cyumuriro mwinshi wa silicon karbide ceramics cyiyongereye cyane
Hamwe niterambere ryiterambere rya siyanse nikoranabuhanga, icyifuzo cyo gukoresha ceramika ya silicon karbide mumashanyarazi ya semiconductor cyiyongereye kuburyo bugaragara, kandi nubushyuhe bwo hejuru bwumuriro nicyo kimenyetso cyingenzi mugukoresha mubikoresho bikoresha ibikoresho bya semiconductor. Niyo mpamvu, ni ngombwa gushimangira ubushakashatsi ku mashanyarazi menshi ya silicon carbide ceramics. Kugabanya ibirimo ogisijeni ya latike, kunoza ubucucike, no kugenzura neza ikwirakwizwa ryicyiciro cya kabiri muri lattike nuburyo bwibanze bwo kunoza ubushyuhe bwumuriro wa ceramika ya silicon.
Kugeza ubu, hari ubushakashatsi buke ku bijyanye n’ubushyuhe bwo hejuru bwa silicon karbide ceramics mu gihugu cyanjye, kandi haracyari icyuho kinini ugereranije n’urwego rwisi. Icyerekezo cy'ubushakashatsi kizaza kirimo:
Shimangira gahunda yo gutegura ubushakashatsi bwa silicon karbide ceramic. Gutegura ifu yuzuye ya ogisijeni ya silikoni ya karubide ni yo shingiro ryogutegura amashanyarazi menshi ya silicon carbide ceramics;
Gushimangira guhitamo ibikoresho bifasha gucumura nubushakashatsi bujyanye;
Shimangira ubushakashatsi niterambere ryibikoresho byo mu rwego rwo hejuru. Mugutunganya uburyo bwo gucumura kugirango ubone microstructure yuzuye, nibisabwa kugirango umuntu abone amashanyarazi menshi ya silicon carbide ceramics.
Ingamba zo kunoza ubushyuhe bwumuriro wa silicon karbide ceramics
Urufunguzo rwo kuzamura ubushyuhe bwumuriro wa SiC ceramics ni ukugabanya fononi ikwirakwiza inshuro nyinshi no kongera fonon bisobanura inzira yubuntu. Ubushyuhe bwumuriro wa SiC buzanozwa neza mugabanya ubukana nimbibi zimbibi zubutaka bwibumba bya SiC, kuzamura ubuziranenge bwimbibi za SiC, kugabanya umwanda wa SiC cyangwa inenge ya lattice, no kongera ubwikorezi bwogutwara ubushyuhe muri SiC. Kugeza ubu, guhindura ubwoko n'ibirimo bifasha gucumura no kuvura ubushyuhe bwo hejuru ni ingamba zingenzi zo kuzamura ubushyuhe bw’ubushyuhe bwa ceramika ya SiC.
Kunonosora ubwoko nibirimo bifasha gucumura
Imfashanyo zitandukanye zo gucumura akenshi zongerwaho mugihe utegura ubukonje bukabije bwa SiC ceramics. Muri byo, ubwoko n'ibirimo bifasha gucumura bigira ingaruka zikomeye kumashanyarazi yubushyuhe bwa ceramika ya SiC. Kurugero, ibice bya Al cyangwa O muri sisitemu ya Al2O3 sisitemu yo gucumura byoroshye gushonga mumurongo wa SiC, bikavamo imyanya nubusembwa, bigatuma kwiyongera kwa fononi ikwirakwizwa. Byongeye kandi, niba ibikubiye mu bikoresho bifasha gucumura ari bike, ibikoresho biragoye gucumura no kwiyongera, mugihe ibintu byinshi bifasha gucumura bizatuma kwiyongera kwanduye nudusembwa. Ibikoresho byinshi byamazi yo gucumura birashobora kandi kubuza imikurire yintete za SiC no kugabanya inzira yubusa ya fonone. Kubwibyo, kugirango hategurwe ubukonje bukabije bwa Ceramics ya SiC, birakenewe kugabanya ibikubiye mubikoresho bifasha gucumura bishoboka mugihe wujuje ibisabwa kugirango ubucucike bugabanuke, kandi ugerageze guhitamo infashanyo zo gucumura bigoye gushonga muri kasike ya SiC.
* Ibikoresho byubushyuhe bwa SiC ceramics mugihe hiyongereyeho ibikoresho bitandukanye byo gucumura
Kugeza ubu, ibumba rya SiC ryashyutswe hamwe na BeO nk'imfashanyo yo gucumura bifite ubushyuhe ntarengwa bwo mucyumba cy'ubushyuhe (270W · m-1 · K-1). Nyamara, BeO ni ibintu bifite ubumara bukabije na kanseri, kandi ntibikwiriye gukoreshwa muri laboratoire cyangwa mu nganda. Ingingo yo hasi ya eutectic ya sisitemu Y2O3-Al2O3 ni 1760 ℃, ikaba ari imfashanyo isanzwe ya feri yo gucumura kubutaka bwa SiC. Ariko, kubera ko Al3 + ishonga byoroshye muri kasike ya SiC, mugihe iyi sisitemu ikoreshwa nkigikoresho cyo gucumura, ubushyuhe bwicyumba cyubushyuhe bwicyumba cyubutaka bwa SiC butarenze 200W · m-1 · K-1.
Ibintu bidakunze kubaho ku isi nka Y, Sm, Sc, Gd na La ntabwo byoroshye gushonga muri kasike ya SiC kandi bifite ogisijeni nyinshi, bishobora kugabanya neza ogisijeni iri muri latike ya SiC. Kubwibyo, Y2O3-RE2O3 (RE = Sm, Sc, Gd, La) sisitemu ni imfashanyo isanzwe yo gucumura mugutegura amashanyarazi menshi (> 200W · m-1 · K-1) Ubukorikori bwa SiC. Dufashe urugero rwa Y2O3-Sc2O3 sisitemu yo gucumura nkurugero, agaciro ka ion gutandukana kwa Y3 + na Si4 + nini, kandi byombi ntibishobora gukemurwa bikomeye. Ububasha bwa Sc muri SiC yera kuri 1800 ~ 2600 ℃ ni nto, hafi (2 ~ 3) × 1017atoms · cm-3.
Treatment Ubushyuhe bwo hejuru bwo kuvura
Ubushyuhe bwo hejuru bwo kuvura ubukerarugendo bwa SiC bufasha gukuraho inenge za lattice, kwimurwa no guhangayikishwa n’ibisigisigi, guteza imbere imiterere y’ibikoresho bimwe na bimwe bya amorphous kuri kristu, no kugabanya ingaruka zo gukwirakwiza fononi. Byongeye kandi, ubushyuhe bwo hejuru bwo kuvura burashobora guteza imbere imikurire yintete za SiC, kandi amaherezo bikazamura imiterere yubushyuhe bwibintu. Kurugero, nyuma yubushyuhe bwo hejuru bwubushyuhe kuri 1950 ° C, coefficient de diffuzione yubushyuhe bwa ceramique ya SiC yiyongereye kuva kuri 83.03mm2 · s-1 igera kuri 89.50mm2 · s-1, naho ubushyuhe bwicyumba-ubushyuhe bwicyumba bwiyongera kuva kuri 180.94W · m -1 · K-1 kugeza 192.17W · m-1 · K-1. Kuvura ubushyuhe bwo hejuru cyane bizamura neza ubushobozi bwa deoxidisation yimfashanyo yo gucumura hejuru ya SiC na lattice, kandi bituma isano iri hagati yintete za SiC ikomera. Nyuma yo kuvura ubushyuhe bwo hejuru, icyumba-ubushyuhe bwumuriro wa SiC ceramics cyaratejwe imbere cyane.
Igihe cyo kohereza: Ukwakira-24-2024