Zovuta zaukadaulo popanga zowotcha zamtundu wapamwamba kwambiri za silicon carbide zomwe zimagwira ntchito mokhazikika ndi monga:
1) Popeza makhiristo amafunikira kukula pamalo otsekedwa ndi kutentha kwambiri kuposa 2000 ° C, zofunikira zowongolera kutentha ndizokwera kwambiri;
2) Popeza silicon carbide ili ndi makristalo opitilira 200, koma ndi zida zochepa chabe za crystal silicon carbide zomwe zimafunikira semiconductor, chiŵerengero cha silicon-to-carbon, kukula kwa kutentha, ndi kukula kwa kristalo kuyenera kuyendetsedwa bwino panthawiyi. ndondomeko ya kukula kwa kristalo. Magawo monga kuthamanga ndi kuthamanga kwa mpweya;
3) Pansi pa njira yotumizira gawo la nthunzi, ukadaulo wokulitsa m'mimba mwake wa silicon carbide crystal kukula ndizovuta kwambiri;
4) Kulimba kwa silicon carbide kuli pafupi ndi diamondi, ndipo njira zodulira, kugaya, ndi kupukuta ndizovuta.
SiC epitaxial wafers: kawirikawiri amapangidwa ndi chemical vapor deposition (CVD) njira. Malinga ndi mitundu yosiyanasiyana ya doping, amagawidwa kukhala n-type ndi p-type epitaxial wafers. Home Hantian Tiancheng ndi Dongguan Tianyu atha kupereka kale 4-inchi/6-inchi SiC epitaxial wafers. Kwa SiC epitaxy, ndizovuta kuwongolera m'munda wamagetsi apamwamba, ndipo mtundu wa SiC epitaxy umakhudza kwambiri zida za SiC. Kuphatikiza apo, zida za epitaxial zimayendetsedwa ndi makampani anayi otsogola pamsika: Axitron, LPE, TEL ndi Nuflare.
Silicon carbide epitaxialchowotcha chimatanthawuza chowotcha cha silicon carbide momwe filimu imodzi ya kristalo (epitaxial layer) yokhala ndi zofunikira zina komanso yofanana ndi gawo lapansi la kristalo limamera pagawo loyambirira la silicon carbide. Kukula kwa Epitaxial makamaka kumagwiritsa ntchito zida za CVD (Chemical Vapor Deposition, ) kapena zida za MBE (Molecular Beam Epitaxy). Popeza zida za silicon carbide zimapangidwa mwachindunji mu epitaxial layer, mtundu wa epitaxial wosanjikiza umakhudza mwachindunji magwiridwe antchito ndi zokolola za chipangizocho. Pamene voteji kupirira ntchito chipangizo akupitiriza kuwonjezeka, makulidwe a lolingana wosanjikiza epitaxial umakhala wandiweyani ndi ulamuliro kumakhala kovuta.Kawirikawiri, pamene voteji ndi kuzungulira 600V, chofunika epitaxial wosanjikiza makulidwe ndi za 6 microns; pamene voteji ndi pakati 1200-1700V, chofunika epitaxial wosanjikiza makulidwe kufika 10-15 microns. Ngati voteji ifika ku 10,000 volts, makulidwe a epitaxial osanjikiza opitilira ma microns 100 angafunike. Pamene makulidwe a epitaxial wosanjikiza akukulirakulirabe, zimakhala zovuta kwambiri kuwongolera makulidwe ndi kusinthika kofanana ndi kuchuluka kwa chilema.
zipangizo SiC: Mayiko, 600 ~ 1700V SiC SBD ndi MOSFET akhala mafakitale. Zogulitsa zazikuluzikulu zimagwira ntchito pamagetsi pansi pa 1200V ndipo makamaka zimatengera TO ma CD. Pankhani yamitengo, zinthu za SiC pamsika wapadziko lonse lapansi zimagulidwa pafupifupi nthawi 5-6 kuposa ma Si anzawo. Komabe, mitengo ikutsika pamlingo wapachaka wa 10%. ndi kukula kwa zipangizo kumtunda ndi kupanga zipangizo mu zaka 2-3 zikubwerazi, kubwera msika adzachuluka, kutsogolera kuchepetsa mitengo. Zikuyembekezeka kuti mtengo ukafika 2-3 kuchulukitsa kwa zinthu za Si, zabwino zomwe zimabweretsedwa ndi kutsika kwamitengo yamakina ndi magwiridwe antchito pang'onopang'ono zidzayendetsa SiC kuti itenge msika wa zida za Si.
Kupaka kwachikhalidwe kumatengera magawo opangidwa ndi silicon, pomwe zida zamtundu wachitatu za semiconductor zimafunikira mawonekedwe atsopano. Kugwiritsa ntchito zida zamapaketi amtundu wa silicon pazida zamagetsi zamitundu yayikulu kumatha kuyambitsa zovuta ndi zovuta zokhudzana ndi pafupipafupi, kasamalidwe kamafuta, komanso kudalirika. Zida zamagetsi za SiC zimakhudzidwa kwambiri ndi mphamvu ya parasitic ndi inductance. Poyerekeza ndi zida za Si, tchipisi tamphamvu za SiC zimakhala ndi liwiro losinthira mwachangu, zomwe zingayambitse kuphulika, kutsika, kutayika kosinthika, komanso kuwonongeka kwa chipangizocho. Kuphatikiza apo, zida zamagetsi za SiC zimagwira ntchito pakutentha kwambiri, zomwe zimafunikira njira zotsogola zowongolera matenthedwe.
Zomangamanga zosiyanasiyana zapangidwa pagawo la ma CD-bandgap semiconductor power package. Zotengera zachikhalidwe za Si-based power module sizoyeneranso. Kuti athetse mavuto a parasitic magawo mkulu ndi osauka kutentha disipation dzuwa la mwambo Si-based mphamvu gawo ma CD ma CD, SiC mphamvu gawo ma CD utenga kulumikiza opanda zingwe ndi iwiri mbali kuzirala luso mu dongosolo lake, komanso utenga gawo gawo lapansi ndi matenthedwe bwino matenthedwe. conductivity, ndikuyesera kuphatikizira ma capacitor ophatikizika, masensa a kutentha / apano, ndikuyendetsa mabwalo mumayendedwe a module, ndikupanga ma CD osiyanasiyana osiyanasiyana. matekinoloje. Kuphatikiza apo, pali zotchinga zapamwamba pakupanga zida za SiC komanso ndalama zopangira ndizokwera.
Zida za silicon carbide zimapangidwa ndikuyika zigawo za epitaxial pa gawo lapansi la silicon carbide kudzera pa CVD. Njirayi imaphatikizapo kuyeretsa, makutidwe ndi okosijeni, kujambula zithunzi, kujambula, kuvula photoresist, kuyika ion, kuyika kwa nthunzi wa silicon nitride, kupukuta, kupopera, ndi ndondomeko zotsatila zopangira kupanga chipangizo pa gawo la SiC single crystal substrate. Mitundu yayikulu ya zida zamagetsi za SiC ndi ma SiC diode, ma transistors a SiC, ndi ma module amagetsi a SiC. Chifukwa cha zinthu monga kuthamanga kwapang'onopang'ono kwa zinthu zakumtunda komanso kutsika kwa zokolola, zida za silicon carbide zimakhala ndi ndalama zambiri zopangira.
Kuphatikiza apo, kupanga zida za silicon carbide kumakhala ndi zovuta zina zaukadaulo:
1) M'pofunika kupanga ndondomeko yeniyeni yomwe ikugwirizana ndi makhalidwe a silicon carbide zipangizo. Mwachitsanzo: SiC ili ndi malo osungunuka kwambiri, zomwe zimapangitsa kuti kutentha kwachikhalidwe kusagwire ntchito. Ndikofunikira kugwiritsa ntchito njira ya ion implantation doping ndikuwongolera molondola magawo monga kutentha, kutentha kwa kutentha, nthawi, ndi kutuluka kwa gasi; SiC ndi inert ku zosungunulira mankhwala. Njira monga etching youma ziyenera kugwiritsidwa ntchito, ndi zida zogoba, zosakaniza za gasi, kuwongolera kotsetsereka kwapambali, kuchuluka kwa etching, roughness yam'mbali, ndi zina zotere ziyenera kukongoletsedwa ndikupangidwa;
2) Kupanga maelekitirodi achitsulo pazitsulo za silicon carbide kumafuna kukana kukhudzana pansipa 10-5Ω2. Zida za elekitirodi zomwe zimakwaniritsa zofunikira, Ni ndi Al, zimakhala ndi kukhazikika kwamafuta ochepera kuposa 100 ° C, koma Al / Ni ili ndi kukhazikika kwamafuta. Kukana kwapadera kwa /W/Au composite elekitirodi ndi 10-3Ω2 apamwamba;
3) SiC ili ndi mavalidwe odula kwambiri, ndipo kuuma kwa SiC ndi kwachiwiri kwa diamondi, komwe kumapereka zofunika kwambiri pakudula, kupera, kupukuta ndi matekinoloje ena.
Kuphatikiza apo, zida zamagetsi za silicon carbide zimakhala zovuta kupanga. Malinga ndi zida zamitundu yosiyanasiyana, zida zamagetsi za silicon carbide zitha kugawidwa m'zida zopanga planar ndi zida za ngalande. Zida zamagetsi za Planar silicon carbide zimakhala ndi kusasinthika kwagawo komanso njira zosavuta zopangira, koma zimakhala ndi zotsatira za JFET ndipo zimakhala ndi mphamvu zambiri za parasitic komanso kukana kwa boma. Poyerekeza ndi zipangizo planar, ngalande silicon carbide mphamvu zipangizo ndi otsika unit kusasinthasintha ndipo ndi zovuta kupanga ndondomeko. Komabe, kapangidwe ka ngalandeko ndi kothandiza kukulitsa kachulukidwe ka chipangizocho ndipo sikungathe kupanga mawonekedwe a JFET, omwe ndi opindulitsa kuthetsa vuto lakuyenda kwachanelo. Ili ndi zinthu zabwino kwambiri monga kukana pang'ono, mphamvu yaying'ono ya parasitic, komanso kugwiritsa ntchito mphamvu pang'ono. Ili ndi mtengo wofunikira komanso mwayi wogwira ntchito ndipo yakhala chitsogozo chachikulu pakupanga zida zamagetsi za silicon carbide. Malinga ndi tsamba lovomerezeka la Rohm, mawonekedwe a ROHM Gen3 (Gen1 Trench structure) ndi 75% yokha ya malo a chip Gen2 (Plannar2), ndipo kukana kwa ROHM Gen3 kumachepetsedwa ndi 50% pansi pa kukula kwa chip komweko.
Silicon carbide substrate, epitaxy, kutsogolo, ndalama za R&D ndi zina zimatengera 47%, 23%, 19%, 6% ndi 5% ya mtengo wopangira zida za silicon carbide motsatana.
Pomaliza, tiyang'ana kwambiri pakuphwanya zotchinga zaukadaulo zamagawo am'makampani a silicon carbide.
Kapangidwe ka magawo a silicon carbide ndi ofanana ndi a silicon-based substrates, koma zovuta kwambiri.
Kapangidwe ka silicon carbide gawo lapansi nthawi zambiri kumaphatikizapo kaphatikizidwe kazinthu zopangira, kukula kwa kristalo, kukonza kwa ingot, kudula kwa ingot, kugaya mkate, kupukuta, kuyeretsa ndi maulalo ena.
Gawo la kukula kwa kristalo ndilo maziko a ndondomeko yonseyi, ndipo sitepe iyi imatsimikizira mphamvu zamagetsi za gawo lapansi la silicon carbide.
Zida za silicon carbide zimakhala zovuta kukula mumadzimadzi nthawi zonse. Njira yakukula kwa nthunzi yotchuka pamsika masiku ano ili ndi kutentha kwa kukula pamwamba pa 2300 ° C ndipo imafuna kuwongolera bwino kutentha kwakukula. Ntchito yonseyi imakhala yovuta kuiwona. Kulakwitsa pang'ono kungayambitse kuchotsedwa kwazinthu. Poyerekeza, zida za silicon zimangofunika 1600 ℃, zomwe ndizotsika kwambiri. Kukonzekera magawo a silicon carbide kumakumananso ndi zovuta monga kukula pang'onopang'ono kwa kristalo ndi zofunikira za mawonekedwe a kristalo. Kukula kwa silicon carbide wafer kumatenga masiku 7 mpaka 10, pomwe kukoka ndodo ya silicon kumangotenga masiku awiri ndi theka. Komanso, silicon carbide ndi zinthu zomwe kuuma kwake ndi kwachiwiri kwa diamondi. Idzataya kwambiri panthawi yodula, kugaya, ndi kupukuta, ndipo chiŵerengero chotuluka ndi 60% yokha.
Tikudziwa kuti zomwe zikuchitika ndikuwonjezera kukula kwa magawo a silicon carbide, kukula kwake kukukulirakulira, zofunikira zaukadaulo wokulitsa m'mimba mwake zikukulirakulira. Zimafunika kuphatikiza zinthu zosiyanasiyana zowongolera luso kuti mukwaniritse kukula kobwerezabwereza kwa makhiristo.
Nthawi yotumiza: May-22-2024