Kutentha kwa Oxidation ya Single Crystal Silicon

Mapangidwe a silicon dioxide pamwamba pa silicon amatchedwa oxidation, ndipo kupangidwa kwa silicon dioxide yokhazikika komanso yolimba kwambiri kunayambitsa kubadwa kwa teknoloji ya silicon Integrated circuit planar. Ngakhale pali njira zambiri zokulirapo silicon dioxide pamwamba pa silicon, nthawi zambiri imachitika ndi matenthedwe oxidation, omwe amawonetsa silicon ku malo otentha oxidizing (oxygen, madzi). Njira zotenthetsera makutidwe ndi okosijeni zimatha kuwongolera makulidwe a filimu ndi mawonekedwe a silicon / silicon dioxide pokonzekera mafilimu a silicon dioxide. Njira zina zokulitsira silicon dioxide ndi plasma anodization ndi kunyowa anodization, koma palibe njira izi zomwe zagwiritsidwa ntchito kwambiri munjira za VLSI.

Silicon ikuwonetsa chizolowezi chopanga silicon dioxide yokhazikika. Ngati silikoni wong'ambika kumene akumana ndi malo okosijeni (monga okosijeni, madzi), amatha kupanga wosanjikiza wowonda kwambiri wa oxide (<20Å) ngakhale kutentha kozizira. Pamene silikoni akumana ndi oxidizing chilengedwe pa kutentha kwambiri, thicker okusayidi wosanjikiza adzapangidwa pa mlingo wachangu. Njira yayikulu yopangira silicon dioxide kuchokera ku silicon imamveka bwino. Deal ndi Grove adapanga mtundu wamasamu womwe umalongosola molondola kukula kwa filimu za oxide zokhuthala kuposa 300Å. Ananena kuti okosijeni ikuchitika motere, ndiko kuti, okosijeni (mamolekyu amadzi ndi mamolekyu a okosijeni) amafalikira kudzera mumtundu womwe ulipo wa oxide mpaka mawonekedwe a Si / SiO2, pomwe oxidant amakumana ndi silicon kupanga silicon dioxide. Zomwe zimachitika popanga silicon dioxide zikufotokozedwa motere:

Zomwe oxidation zimachitikira pa Si / SiO2 mawonekedwe, kotero pamene oxide wosanjikiza ikukula, silikoni mosalekeza kudyedwa ndipo mawonekedwe pang'onopang'ono amalowa silicon. Malinga ndi kachulukidwe kofananirako komanso kulemera kwa ma molekyulu a silicon ndi silicon dioxide, zitha kupezeka kuti silicon yomwe imagwiritsidwa ntchito pakukhuthala kwa gawo lomaliza la oxide ndi 44%. Mwanjira iyi, ngati oxide wosanjikiza ikukula 10,000Å, 4400Å ya silicon idzadyedwa. Ubale uwu ndi wofunikira pakuwerengera kutalika kwa masitepe opangidwa pansalu ya silicon. Masitepewa ndi zotsatira zamitundu yosiyanasiyana ya okosijeni m'malo osiyanasiyana pamtunda wa silicon wafer.

Timaperekanso zinthu zamtengo wapatali za graphite ndi silicon carbide, zomwe zimagwiritsidwa ntchito kwambiri pokonza zophatikizika ngati makutidwe ndi okosijeni, kufalikira, ndi kusungunula.

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