Zoyambira za SiC zokutira za graphite zimagwiritsidwa ntchito kuthandizira ndikutenthetsa magawo akristalo amodzi mu zida zachitsulo-organic chemical vapor deposition (MOCVD). Kukhazikika kwamafuta, kufanana kwamafuta ndi magawo ena a magwiridwe antchito a SiC yokutidwa ndi graphite base amatenga gawo lalikulu pakukula kwazinthu za epitaxial, chifukwa chake ndiye chigawo chachikulu cha zida za MOCVD.
Popanga zowotcha, zigawo za epitaxial zimamangidwanso pazinthu zina zowotcha kuti zithandizire kupanga zida. Zipangizo zamakono zopangira kuwala kwa LED ziyenera kukonzekera zigawo za epitaxial za GaAs pazitsulo za silicon; SiC epitaxial wosanjikiza wakula pa conductive SiC gawo lapansi pomanga zipangizo monga SBD, MOSFET, etc., kwa voteji mkulu, mkulu panopa ndi ntchito zina mphamvu; GaN epitaxial layer imamangidwa pa gawo laling'ono la SiC kuti ipititse patsogolo kupanga HEMT ndi zida zina zamagwiritsidwe ntchito a RF monga kulumikizana. Njirayi ndi yosasiyanitsidwa ndi zida za CVD.
Mu zida za CVD, gawo lapansi silingayikidwe mwachindunji pazitsulo kapena kungoyikidwa pa maziko a epitaxial deposition, chifukwa imakhudza kuyenda kwa gasi (yopingasa, yopingasa), kutentha, kuthamanga, kukonza, kukhetsa zoipitsa ndi zina. chikoka zinthu. Choncho, maziko amafunikira, ndiyeno gawo lapansi limayikidwa pa disc, ndiyeno epitaxial deposition ikuchitika pa gawo lapansi pogwiritsa ntchito teknoloji ya CVD, ndipo maziko awa ndi SiC wokutira graphite maziko (omwe amadziwikanso kuti tray).
Zoyambira za SiC zokutira za graphite zimagwiritsidwa ntchito kuthandizira ndikutenthetsa magawo akristalo amodzi mu zida zachitsulo-organic chemical vapor deposition (MOCVD). Kukhazikika kwamafuta, kufanana kwamafuta ndi magawo ena a magwiridwe antchito a SiC yokutidwa ndi graphite base amatenga gawo lalikulu pakukula kwazinthu za epitaxial, chifukwa chake ndiye chigawo chachikulu cha zida za MOCVD.
Metal-organic chemical vapor deposition (MOCVD) ndiye ukadaulo wodziwika bwino pakukulitsa mafilimu a GaN mu LED ya buluu. Ili ndi ubwino wa ntchito yosavuta, kukula kosinthika komanso kuyera kwakukulu kwa mafilimu a GaN. Monga gawo lofunikira mu chipinda chochitiramo zida za MOCVD, maziko omwe amagwiritsidwa ntchito pakukula kwa filimu ya GaN epitaxial ayenera kukhala ndi ubwino wa kukana kutentha kwapamwamba, kutentha kwa yunifolomu, kukhazikika kwa mankhwala, kukana kwamphamvu kwa kutentha, etc. zomwe zili pamwambazi.
Monga chimodzi mwa zigawo zikuluzikulu za MOCVD zida, graphite m'munsi ndi chonyamulira ndi Kutentha thupi la gawo lapansi, amene mwachindunji chimatsimikizira kufanana ndi chiyero cha filimu zakuthupi, kotero khalidwe lake mwachindunji zimakhudza yokonza pepala epitaxial, ndi nthawi yomweyo. nthawi, ndi kuwonjezeka kwa chiwerengero cha ntchito ndi kusintha kwa zinthu zogwirira ntchito, zimakhala zosavuta kuvala, zomwe zimakhala zogwiritsidwa ntchito.
Ngakhale graphite ali kwambiri matenthedwe matenthedwe madutsidwe ndi bata, ali ndi mwayi wabwino monga m'munsi chigawo chimodzi cha MOCVD zida, koma mu ndondomeko kupanga, graphite adzakhala dzimbiri ufa chifukwa zotsalira za mpweya zikuwononga ndi zitsulo organics, ndi moyo utumiki wa graphite maziko adzachepetsedwa kwambiri. Pa nthawi yomweyo, kugwa graphite ufa adzachititsa kuipitsa kwa Chip.
Kuwonekera kwa ukadaulo wokutira kungapereke kukhazikika kwa ufa pamwamba, kukulitsa matenthedwe matenthedwe, ndikufananiza kugawa kwa kutentha, komwe kwakhala ukadaulo waukulu kuthetsa vutoli. Graphite m'munsi mu MOCVD zida ntchito chilengedwe, graphite m'munsi ❖ kuyanika pamwamba ayenera kukwaniritsa makhalidwe awa:
(1) Mtsinje wa graphite ukhoza kukulungidwa bwino, ndipo kachulukidwe kake ndi bwino, mwinamwake maziko a graphite ndi osavuta kuti awonongeke mu gasi wowononga.
(2) Kuphatikizika mphamvu ndi graphite m'munsi ndi mkulu kuonetsetsa kuti ❖ kuyanika si kophweka kugwa pambuyo kangapo kutentha ndi kutentha otsika mkombero.
(3) Imakhala ndi kukhazikika kwamankhwala kuti ipewe ❖ kuyanika pa kutentha kwambiri komanso mlengalenga wowononga.
SiC ili ndi ubwino wa kukana kwa dzimbiri, kutsekemera kwapamwamba kwa kutentha, kutentha kwa kutentha ndi kukhazikika kwa mankhwala, ndipo imatha kugwira ntchito bwino mu GaN epitaxial atmosphere. Kuphatikiza apo, kuchuluka kwa kutentha kwa SiC kumasiyana pang'ono ndi graphite, kotero SiC ndiye chinthu chomwe chimakondedwa kwambiri pakuphimba pamwamba pa graphite base.
Pakali pano, SiC wamba makamaka 3C, 4H ndi 6H mtundu, ndi SiC ntchito mitundu kristalo osiyana. Mwachitsanzo, 4H-SiC imatha kupanga zida zamphamvu kwambiri; 6H-SiC ndiyokhazikika kwambiri ndipo imatha kupanga zida zamagetsi zamagetsi; Chifukwa cha mawonekedwe ake ofanana ndi GaN, 3C-SiC ingagwiritsidwe ntchito kupanga GaN epitaxial layer ndikupanga zipangizo za SiC-GaN RF. 3C-SiC imadziwikanso kuti β-SiC, ndipo ntchito yofunika kwambiri ya β-SiC imakhala ngati filimu ndi zokutira, kotero β-SiC pakali pano ndizofunikira kwambiri zopangira.
Njira yopangira zokutira za silicon carbide
Pakali pano, njira zokonzekera za ❖ kuyanika kwa SiC makamaka zimaphatikizapo njira ya gel-sol, njira yophatikizira, njira yokutira burashi, njira yopopera mankhwala a plasma, njira ya gas reaction (CVR) ndi njira yopangira mpweya wa mankhwala (CVD).
Njira yoyika:
Njirayi ndi mtundu wa kutentha kwakukulu kwa gawo lolimba, lomwe makamaka limagwiritsa ntchito kusakaniza kwa Si ufa ndi C ufa monga ufa woyikira, matrix a graphite amaikidwa mu ufa wophatikizira, ndipo kutentha kwapamwamba kumachitidwa mu mpweya wa inert. , ndipo potsiriza zokutira za SiC zimapezeka pamwamba pa matrix a graphite. Njirayi ndi yosavuta komanso kuphatikiza pakati pa zokutira ndi gawo lapansi ndikwabwino, koma kufananiza kwa zokutira motsatira makulidwe ake ndikosavuta, komwe kumakhala kosavuta kutulutsa mabowo ambiri ndikupangitsa kukana kwa okosijeni kosauka.
Njira yokutira burashi:
The burashi ❖ kuyanika njira makamaka potsuka madzi zopangira pamwamba pa graphite masanjidwewo, ndiyeno kuchiritsa zopangira pa kutentha kwina kukonzekera ❖ kuyanika. Njirayi ndi yosavuta ndipo mtengo wake ndi wotsika, koma zokutira zomwe zimakonzedwa ndi njira yokutira burashi ndizofooka kuphatikiza ndi gawo lapansi, kufananira kwa zokutira ndizosauka, zokutira ndizochepa thupi komanso kukana kwa okosijeni ndikochepa, ndipo njira zina zimafunikira kuthandizira. izo.
Njira yopopera plasma:
The plasma kupopera mbewu mankhwalawa makamaka kupopera anasungunuka kapena theka-anasungunuka zopangira pamwamba pa graphite masanjidwewo ndi plasma mfuti, ndiyeno kulimba ndi chomangira kupanga ❖ kuyanika. Njirayi ndi yosavuta kugwiritsa ntchito ndipo imatha kukonzekera zokutira wandiweyani wa silicon carbide, koma zokutira za silicon carbide zokonzedwa ndi njirayo nthawi zambiri zimakhala zofooka kwambiri ndipo zimatsogolera kukana kwa okosijeni ofooka, chifukwa chake zimagwiritsidwa ntchito pokonzekera zokutira za SiC kuti ziwongolere. ubwino wa zokutira.
Njira ya Gel-sol:
Njira ya gel-sol ndi yokonzekera yunifolomu ndi yowonekera bwino yothetsera sol yomwe imaphimba pamwamba pa masanjidwewo, kuyanika mu gel osakaniza ndikupukuta kuti mupeze zokutira. Njirayi ndi yosavuta kugwiritsa ntchito komanso yotsika mtengo, koma zokutira zomwe zimapangidwira zimakhala ndi zofooka zina monga kutsika kwa kutentha kwa kutentha ndi kuphulika kosavuta, kotero sikungagwiritsidwe ntchito kwambiri.
Chemical Gas Reaction (CVR) :
CVR makamaka imapanga zokutira za SiC pogwiritsa ntchito Si ndi SiO2 ufa kuti apange nthunzi ya SiO pa kutentha kwakukulu, ndipo mndandanda wa zochitika za mankhwala zimachitika pamtunda wa C material substrate. Chophimba cha SiC chokonzedwa ndi njirayi chimagwirizana kwambiri ndi gawo lapansi, koma kutentha kwazomwe kumakhala kokwera komanso mtengo wake ndi wapamwamba.
Chemical Vapor Deposition (CVD):
Pakalipano, CVD ndiye teknoloji yayikulu yokonzekera zokutira za SiC pamtunda wapansi. Njira yayikulu ndikusintha kwakuthupi komanso kwamankhwala kwazinthu zamagetsi zomwe zimakhudzidwa ndi gawo lapansi, ndipo pomaliza, zokutira za SiC zimakonzedwa ndikuyika pamtunda wapansi. The SiC ❖ kuyanika wokonzedwa ndi luso CVD ndi kwambiri omangiriridwa pamwamba pa gawo lapansi, amene angathe bwino kusintha kukana makutidwe ndi okosijeni ndi kukana ablative wa gawo lapansi, koma mafunsidwe nthawi ya njira iyi ndi yaitali, ndi mpweya anachita ali ndi poizoni wina. gasi.
Msika wa SiC wokutidwa ndi graphite base
Pamene opanga akunja adayamba msanga, anali ndi chitsogozo chomveka komanso gawo lalikulu la msika. Padziko lonse lapansi, ogulitsa ambiri a SiC coated graphite base ndi Dutch Xycard, Germany SGL Carbon (SGL), Japan Toyo Carbon, United States MEMC ndi makampani ena, omwe amakhala pamsika wapadziko lonse lapansi. Ngakhale China wathyola kiyi pachimake luso la kukula yunifolomu wa SiC ❖ kuyanika pamwamba graphite masanjidwewo, apamwamba graphite masanjidwewo akadali amadalira German SGL, Japan Toyo Mpweya ndi mabizinesi ena, masanjidwewo graphite operekedwa ndi mabizinesi zoweta zimakhudza utumiki. moyo chifukwa cha matenthedwe matenthedwe, zotanuka modulus, rigid modulus, zilema lattice ndi mavuto ena khalidwe. The zida MOCVD sangathe kukwaniritsa zofunika za ntchito SiC TACHIMATA graphite m'munsi.
China a semiconductor makampani akukula mofulumira, ndi kuwonjezeka pang'onopang'ono kwa MOCVD epitaxial zida kumasulira mlingo, ndi njira zina ntchito kukula, tsogolo SiC TACHIMATA graphite m'munsi malonda msika akuyembekezeka kukula mofulumira. Malinga ndi kuyerekezera koyambirira kwamakampani, msika wapakhomo wa graphite upitilira ma yuan miliyoni 500 pazaka zingapo zikubwerazi.
SiC yokutidwa ndi graphite m'munsi ndi chigawo chachikulu cha pawiri semiconductor mafakitale zipangizo, bwino luso pachimake pachimake kupanga ndi kupanga, ndi kuzindikira kumasuliridwa lonse yaiwisi-ndondomeko-zida unyolo wa mafakitale ndi yofunika kwambiri njira kuonetsetsa chitukuko cha Makampani opanga ma semiconductor aku China. Munda wa zoweta SiC TACHIMATA graphite maziko akuchulukirachulukira, ndipo khalidwe mankhwala akhoza kufika mlingo wapamwamba mayiko posachedwapa.
Nthawi yotumiza: Jul-24-2023