Kugwiritsa ntchito ndi kupititsa patsogolo kafukufuku wa zokutira za SiC mu zida za carbon/carbon thermal field for monocrystalline silicon-2

1 Kagwiritsidwe ntchito ndi kafukufuku wa zokutira za silicon carbide mu zida za carbon/carbon thermal field

1.1 Ntchito ndi kafukufuku akupita patsogolo pokonzekera crucible

M'munda umodzi wotentha wa crystal, thempweya / carbon cruciblechimagwiritsidwa ntchito ngati chotengera chotengera zinthu za silicon ndipo chimakhudzana ndiquartz crucible, monga momwe tawonetsera pa Chithunzi 2. Kutentha kwa ntchito ya carbon / carbon crucible ndi pafupifupi 1450℃, yomwe imakhudzidwa ndi kukokoloka kawiri kwa silicon dioxide (silicon dioxide) ndi mpweya wa silicon, ndipo pamapeto pake crucible imakhala yopyapyala kapena imakhala ndi mng'alu wa mphete, zomwe zimapangitsa kulephera kwa crucible.

Chophimba chophatikizika cha carbon/carbon composite crucible chinakonzedwa ndi njira yopitira ndi mpweya wamankhwala komanso momwe amachitira. Chophimba chophatikizikacho chinali ndi zokutira za silicon carbide (100 ~ 300μm), zokutira za silicon (10 ~ 20μm) ndi zokutira za silicon nitride (50 ~ 100μm), zomwe zingalepheretse kuwonongeka kwa nthunzi ya silicon pamtunda wamkati wa carbon / carbon composite crucible. Popanga, kutayika kwa crucible yopangidwa ndi kaboni / carbon composite crucible ndi 0.04 mm pa ng'anjo, ndipo moyo wautumiki ukhoza kufika nthawi 180.

Ofufuzawa adagwiritsa ntchito njira yopangira mankhwala kuti apange zokutira zofananira za silicon carbide pamwamba pa crucible ya carbon / carbon composite pansi pazikhalidwe zina za kutentha komanso kutetezedwa kwa mpweya wonyamulira, pogwiritsa ntchito silicon dioxide ndi chitsulo cha silicon ngati zida zopangira mu sintering yotentha kwambiri. ng'anjo. Zotsatira zikuwonetsa kuti kutentha kwapamwamba sikumangowonjezera chiyero ndi mphamvu ya zokutira za sic, komanso kumapangitsanso kwambiri kukana kwa mpweya wa carbon / carbon composite, komanso kumalepheretsa kuwonongeka kwa pamwamba pa crucible ndi mpweya wa SiO. ndi maatomu osasinthika a okosijeni mung'anjo ya silicon ya monocrystal. Moyo wautumiki wa crucible ukuwonjezeka ndi 20% poyerekeza ndi crucible popanda zokutira sic.

1.2 Kupititsa patsogolo ntchito ndi kafukufuku mu chubu chowongolera

Silinda yowongolera ili pamwamba pa crucible (monga momwe tawonetsera pa Chithunzi 1). Pokoka kristalo, kusiyana kwa kutentha pakati pa mkati ndi kunja kwamunda kumakhala kwakukulu, makamaka pansi ndi pafupi kwambiri ndi zinthu zosungunula za silicon, kutentha ndipamwamba kwambiri, ndipo dzimbiri ndi nthunzi ya silicon ndizovuta kwambiri.

Ofufuzawo adapanga njira yosavuta komanso kukana kwa okosijeni kwa chubu chowongolera anti-oxidation zokutira ndi njira yokonzekera. Choyamba, wosanjikiza wa silicon carbide whisker anali mu-situ anakulira pa masanjidwe a chubu wotsogolera, ndiyeno wandiweyani silicon carbide kunja wosanjikiza anakonzedwa, kotero kuti SiCw kusintha wosanjikiza anapangidwa pakati masanjidwewo ndi wandiweyani silicon carbide pamwamba wosanjikiza. , monga momwe tawonetsera pa Chithunzi 3. Coefficient of thermal expansion inali pakati pa matrix ndi silicon carbide. Ikhoza kuchepetsa kupsinjika kwa kutentha komwe kumachitika chifukwa cha kusagwirizana kwa coefficient yowonjezera kutentha.

Kusanthula kukuwonetsa kuti pakuwonjezeka kwa zinthu za SiCw, kukula ndi kuchuluka kwa ming'alu pakuphimba kumachepa. Pambuyo pa 10h oxidation mu 1100℃mpweya, kuchuluka kwa kuwonda kwa zitsanzo zokutira ndi 0.87% ~ 8.87% yokha, ndipo kukana kwa okosijeni ndi kukana kwamphamvu kwa silicon carbide ❖ kuyanika kumakhala bwino kwambiri. Ntchito yonse yokonzekera imamalizidwa mosalekeza ndi kuyika kwa nthunzi wamankhwala, kukonza zokutira za silicon carbide kumakhala kosavuta, ndipo magwiridwe antchito amphuno yonse amalimbikitsidwa.

Ofufuzawo adapereka njira yolimbikitsira matrix ndi zokutira pamwamba pa chubu chowongolera cha graphite cha czohr monocrystal silicon. The anapezedwa silicon carbide slurry anali uniformly wokutidwa pamwamba pa graphite kalozera chubu ndi zokutira makulidwe a 30 ~ 50μmita ndi ❖ kuyanika burashi kapena kutsitsi ❖ kuyanika njira, ndiyeno n'kuikidwa mu ng'anjo mkulu kutentha kwa in-situ anachita, kutentha anachita anali 1850 ~ 2300.℃, ndi kusunga kutentha kunali 2 ~ 6h. SiC wosanjikiza akunja angagwiritsidwe ntchito 24 mu (60.96 cm) single galasi kukula ng'anjo, ndi kutentha ntchito ndi 1500℃, ndipo amapezeka kuti palibe ufa wosweka ndi kugwa pamwamba pa graphite guide cylinder pambuyo pa 1500h.

1.3 Kagwiritsidwe ntchito ndi kafufuzidwe kakupitilira mu silinda yotsekera

Monga chimodzi mwazinthu zofunika kwambiri za monocrystalline silicon thermal field system, silinda yotsekemera imagwiritsidwa ntchito kwambiri kuchepetsa kutayika kwa kutentha ndikuwongolera kutentha kwa malo otentha. Monga gawo lothandizira gawo lamkati lamkati la ng'anjo ya kristalo imodzi, silicon vapor corrosion imatsogolera kutsika kwa slag ndi kusweka kwa zinthu, zomwe pamapeto pake zimabweretsa kulephera kwazinthu.

Pofuna kupititsa patsogolo mphamvu ya silicon vapor corrosion resistance ya C/C-sic composite Insurance chubu, ofufuzawo adayika zida za C/C-sic composite kutchinjiriza mu ng'anjo yamoto, ndikukonzekera zokutira wandiweyani wa silicon carbide pa pamwamba pa C/C-sic composite insulation chubu mankhwala ndi mankhwala nthunzi deposition ndondomeko. Zotsatira zikuwonetsa kuti, Njirayi imatha kuletsa kuwonongeka kwa mpweya wa kaboni pachimake cha C/C-sic composite ndi nthunzi ya silicon, ndipo kukana kwa dzimbiri kwa nthunzi ya silicon kumachulukitsidwa ndi 5 mpaka 10 poyerekeza ndi gulu la kaboni / mpweya, ndipo moyo wautumiki wa silinda yotsekemera komanso chitetezo cha malo otenthetsera malo amawongoleredwa bwino kwambiri.

2.Mapeto ndi chiyembekezo

Chophimba cha silicon carbideamagwiritsidwa ntchito mochulukira mu zida za carbon/carbon thermal field chifukwa cha kukana kwake kwa okosijeni pa kutentha kwambiri. Ndi kukula kukula kwa carbon / mpweya matenthedwe kumunda zipangizo ntchito monocrystalline pakachitsulo kupanga, mmene kusintha yunifolomu silicon carbide ❖ kuyanika pamwamba pa zipangizo matenthedwe munda ndi kusintha moyo utumiki wa mpweya / mpweya matenthedwe kumunda zipangizo wakhala vuto mwamsanga kuti athetsedwe.

Kumbali ina, ndi chitukuko cha makampani a monocrystalline silicon, kufunikira kwa zinthu zakumunda zoyera kwambiri za carbon/carbon thermal field zikuchulukirachulukira, ndipo ma SiC nanofibers amakulitsidwanso pazitsulo zamkati za kaboni panthawiyi. Kuchulukitsa kwachulukidwe komanso kutulutsa kwamtundu wa C/C-ZRC ndi C/C-sic ZrC zopanga zokonzedwa ndi kuyesa ndi -0.32 mg/s ndi 2.57μm/s, motero. Misa ndi mizere yochotsera mizere yamagulu a C/ C-sic -ZrC ndi -0.24mg/s ndi 1.66μm/s, motero. Zophatikizika za C/ C-ZRC ndi SiC nanofibers zili ndi zinthu zabwinoko zotulutsa. Pambuyo pake, zotsatira za magwero osiyanasiyana a kaboni pakukula kwa SiC nanofibers ndi makina a SiC nanofibers omwe amalimbitsa mphamvu ya ablative ya C/C-ZRC composites adzaphunziridwa.

Chophimba chophatikizika cha carbon/carbon composite crucible chinakonzedwa ndi njira yopitira ndi mpweya wamankhwala komanso momwe amachitira. Chophimba chophatikizikacho chinali ndi zokutira za silicon carbide (100 ~ 300μm), zokutira za silicon (10 ~ 20μm) ndi zokutira za silicon nitride (50 ~ 100μm), zomwe zingalepheretse kuwonongeka kwa nthunzi ya silicon pamtunda wamkati wa carbon / carbon composite crucible. Popanga, kutayika kwa crucible yopangidwa ndi kaboni / carbon composite crucible ndi 0.04 mm pa ng'anjo, ndipo moyo wautumiki ukhoza kufika nthawi 180.