Silicon Carbidebụ ngwakọta siri ike nwere silicon na carbon, a na-ahụkwa ya na okike dị ka moissanite ịnweta mineral dị oke ụkọ. Enwere ike ijikọ mkpụrụ osisi siliki carbide ọnụ site na ijikọ iji mepụta seramiki siri ike, nke a na-ejikarị na ngwa chọrọ ogologo oge dị elu, ọkachasị na usoro semiconductor.
Ọdịdị anụ ahụ nke SiC
Kedu ihe bụ mkpuchi SiC?
Ihe mkpuchi SiC bụ mkpuchi mkpuchi silicon carbide siri ike, nke nwere nnukwu corrosion na nguzogide okpomọkụ yana ezigbo ikuku ọkụ. A na-eji mkpuchi SiC a dị elu dị ọcha na semiconductor na ụlọ ọrụ eletrọnịkị iji chebe ndị na-ebu wafer, ntọala na ihe ndị na-ekpo ọkụ site na gburugburu ndị na-emebi emebi na nke na-emeghachi omume. Ihe mkpuchi SiC dịkwa mma maka ọkụ ọkụ na ikpo ọkụ nlele na oghere dị elu, reactive na ikuku oxygen.
Elu mkpuchi SiC dị ọcha
Kedu ihe bụ usoro mkpuchi SiC?
A na-edobe oyi akwa silicon carbide n'elu nke mkpụrụ ahụ na-ejiCVD (Ntube uzuoku kemịkalụ). A na-emekarị nkwụnye ego na okpomọkụ nke 1200-1300 Celsius C na omume mgbasawanye okpomọkụ nke ihe ntinye kwesịrị ikwekọ na mkpuchi SiC iji belata nrụgide okpomọkụ.
CVD SIC mkpuchi ihe nkiri CRYSTAL StRUCTURE
Njirimara anụ ahụ nke mkpuchi SiC na-egosipụtakarị na nguzogide okpomọkụ ya dị elu, ike siri ike, nguzogide corrosion na ọkụ ọkụ.
Paragraf anụ ahụ a na-ahụkarị na-abụkarị ndị a:
Isi ike: Ihe mkpuchi SiC na-enwekarị ike ike Vickers na oke nke 2000-2500 HV, nke na-enye ha oke oke iyi na nguzogide mmetụta na ngwa mmepụta ihe.
Njupụta: Ihe mkpuchi SiC na-enwekarị njupụta nke 3.1-3.2 g/cm³. Nnukwu njupụta na-enye aka na ike ọrụ na ịdịte aka nke mkpuchi.
Thermal conductivity: Ihe mkpuchi SiC nwere ihe nrụpụta okpomọkụ dị elu, nke na-adịkarị na 120-200 W / mK (na 20 ° C). Nke a na-enye ya ezigbo conductivity thermal na gburugburu okpomọkụ dị elu ma mee ka ọ dị mma maka ngwa ọgwụgwọ okpomọkụ na ụlọ ọrụ semiconductor.
Ebe mgbaze: silicon carbide nwere ebe mgbaze nke ihe dịka 2730 Celsius ma nwee nkwụsi ike nke okpomọkụ na oke okpomọkụ.
Ọnụọgụ nke Thermal Mgbasawanye: SiC mkpuchi nwere ọnụ ala linear ọnụọgụ nke thermal mgbasa (CTE), a na nso nke 4.0-4.5 µm / mK (na 25-1000 ℃). Nke a pụtara na nkwụsi ike nke akụkụ ya dị mma karịa nnukwu ọdịiche okpomọkụ.
Nguzogide corrosion: Ihe mkpuchi SiC na-eguzogide nke ukwuu na corrosion na acid siri ike, alkali na oxidizing gburugburu, karịsịa mgbe ị na-eji acids siri ike (dị ka HF ma ọ bụ HCl), nkwụsị nke corrosion ha karịrị nnọọ nke ihe ígwè.
Enwere ike itinye mkpuchi SiC na ihe ndị a:
graphite isostatic dị ọcha (CTE dị ala)
Tungsten
Molybdenum
Silicon Carbide
Silicon nitride
Ihe mejupụtara Carbon-Carbon (CFC)
A na-ejikarị ngwaahịa mkpuchi SiC eme ihe na mpaghara ndị a:
Ikanam mgbawa mmepụta
Polysilicon mmepụta
Semiconductoruto kristal
Silik naSiC epitaxy
Wafer okpomọkụ ọgwụgwọ na etching
Kedu ihe kpatara ịhọrọ VET Energy?
VET Energy bụ onye na-emepụta ihe, onye na-emepụta ihe na onye ndu nke ngwaahịa mkpuchi SiC na China, ngwaahịa mkpuchi SiC bụ isi gụnyere.onye na-ebu wafer nwere mkpuchi SiC, SiC kpuchieepitaxial susceptor, mgbanaka graphite mkpuchi siC, Akụkụ ọkara ọnwa nwere mkpuchi SiC, Ihe mejupụtara carbon-carbon nke SiC nwere mkpuchi, Ụgbọ mmiri wafer nke SiC nwere mkpuchi, SiC mkpuchi mkpuchi, wdg. VET Energy na-agba mbọ inye ụlọ ọrụ semiconductor na teknụzụ kachasị elu na ngwọta ngwaahịa, ma na-akwado ọrụ nhazi. Anyị na-atụsi anya ike ịbụ onye gị na ya na-akpakọrịta ogologo oge na China.
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Oge nzipu: Ọktoba 18-2024