The kristal ibu ọkụ bụ isi akụrụngwa makasilicon carbideuto kristal. Ọ dị ka ọkụ ọkụ kristal kristal omenala. Ọdịdị ọkụ adịghị mgbagwoju anya. Ọ bụ tumadi esịnede oku ahu, kpo oku usoro, eriri igwe nnyefe usoro, agụụ inweta na nha usoro, gas ụzọ usoro, jụrụ usoro, akara usoro, wdg The thermal ubi na usoro ọnọdụ ikpebi isi egosi nke.silicon carbide crystaldị ka àgwà, size, conductivity na na.
N'otu aka ahụ, okpomọkụ n'oge uto nkesilicon carbide crystaldị oke elu na enweghị ike nyochaa ya. Ya mere, isi ihe isi ike dị na usoro ahụ n'onwe ya. Isi ihe isi ike bụ ndị a:
(1) Ihe isi ike na njikwa ọkụ ọkụ: Nleba anya nke oghere okpomọkụ dị elu mechiri emechi siri ike na nke a na-apụghị ịchịkwa. Dị iche na silịkọn dabeere ngwọta kpọmkwem-dọta kristal ibu akụrụngwa na a elu ogo nke akpaaka na ịhụ na njikwa kristal uto usoro, silicon carbide crystals na-eto na a mechiri emechi oghere na a elu okpomọkụ gburugburu n'elu 2,000 ℃, na uto okpomọkụ. kwesịrị ịchịkwa ya nke ọma n'oge mmepụta, nke na-eme ka njikwa okpomọkụ sie ike;
(2) Ihe isi ike na njikwa ụdị kristal: micropipes, polymorphic inclusions, dislocations na ntụpọ ndị ọzọ na-adịkarị mfe ime n'oge usoro uto, ha na-emetụta ma na-agbanwe ibe ha. Micropipes (MP) bụ ntụpọ site n'ụdị nwere nha nke ọtụtụ microns ruo iri iri nke microns, bụ ntụpọ na-egbu ngwaọrụ. Silicon carbide otu kristal gụnyere ihe karịrị ụdị kristal 200 dị iche iche, mana naanị ụdị kristal ole na ole (ụdị 4H) bụ ihe semiconductor achọrọ maka mmepụta. Ngbanwe ụdị kristal dị mfe ime n'oge usoro uto, na-ebute ntụpọ nsonye polymorphic. Ya mere, ọ dị mkpa ijikwa usoro ziri ezi dị ka ọnụọgụ silicon-carbon, gradient okpomọkụ, ọnụego uto kristal, na nrụgide ikuku. Na mgbakwunye, enwere gradient okpomọkụ na mpaghara thermal nke silicon carbide otu kristal uto, nke na-eduga ná nrụgide dị n'ime ala na ihe ndọpụ uche (basal plane dislocation BPD, screw dislocation TSD, Edge dislocation TED) n'oge usoro uto kristal, si otú ahụ. na-emetụta ogo na arụmọrụ nke epitaxy na ngwaọrụ na-esote.
(3) Njikwa doping siri ike: A ghaghị ịchịkwa iwebata ihe ndị na-adịghị ọcha n'èzí iji nweta kristal na-eduzi na doping ntụziaka;
(4) Ọnụ ọgụgụ na-eto ngwa ngwa: Ọnụ ọgụgụ nke silicon carbide na-eto ngwa ngwa. Ngwa silicon ọdịnala chọrọ naanị ụbọchị 3 ka ọ bụrụ mkpanaka kristal, ebe mkpanaka kristal silicon carbide chọrọ ụbọchị 7. Nke a na-eduga na ndammana mmepụta arụmọrụ nke silicon carbide na oke oke mmepụta.
N'aka nke ọzọ, paramita nke silicon carbide epitaxial growth na-achọsi ike nke ukwuu, gụnyere ikuku ikuku nke akụrụngwa, nkwụsi ike nke nrụgide gas na ụlọ mmeghachi omume, njikwa ziri ezi nke oge mmeghe gas, izi ezi nke gas. oke, na njikwa siri ike nke okpomọkụ deposition. Karịsịa, site n'ịkwalite ọkwa nguzogide voltaji nke ngwaọrụ ahụ, ihe isi ike nke ịchịkwa ihe ndị bụ isi nke wafer epitaxial abawanyela nke ukwuu. Tụkwasị na nke ahụ, na mmụba nke ọkpụkpụ nke epitaxial oyi akwa, otu esi ejikwa otu nke resistivity ma belata njupụta ntụpọ ahụ mgbe ị na-ahụ na ọkpụkpụ aghọwo ihe ịma aka ọzọ. Na usoro njikwa ọkụ eletrik, ọ dị mkpa ijikọta ihe mmetụta dị elu na ndị na-eme ihe iji hụ na ihe dị iche iche dị iche iche nwere ike ịhazi ya nke ọma na nke ọma. N'otu oge ahụ, njikarịcha nke njikwa algorithm dịkwa oke mkpa. Ọ dị mkpa ka ọ nwee ike ịhazigharị usoro njikwa ahụ ozugbo dị ka mgbaàmà nzaghachi iji gbanwee mgbanwe dị iche iche na usoro uto epitaxial silicon carbide.
Isi ihe isi ike nasilicon carbide mkpụrụmmepụta:
Oge nzipu: Jun-07-2024