Ihe isi ike teknuzu dị n'ichepụta nnukwu ihe na-emepụta silicon carbide wafers nwere arụmọrụ kwụsiri ike gụnyere:
1) Ebe ọ bụ na kristal chọrọ ka ọ na-eto eto na gburugburu ebe a na-ekpo ọkụ na-ekpo ọkụ n'elu 2000 ° C, ihe nchịkwa okpomọkụ chọrọ dị oke elu;
2) Ebe ọ bụ na silicon carbide nwere ihe karịrị kristal 200, mana naanị ihe owuwu ole na ole nke silicon carbide bụ ihe achọrọ semiconductor, usoro silicon-to-carbon, gradient uto okpomọkụ, na uto kristal kwesịrị ịchịkwa nke ọma n'oge. usoro uto kristal. Parameters dị ka ọsọ ọsọ na ikuku ikuku;
3) N'okpuru usoro nnyefe nke vapor, teknụzụ mgbasawanye dayameta nke uto kristal silicon carbide siri ike;
4) Isi ike nke silicon carbide dị nso na nke diamond, na ịcha, ichikota, na polishing usoro siri ike.
SiC epitaxial wafers: a na-emekarị site na usoro ntinye mmiri kemịkalụ (CVD). Dị ka ụdị doping dị iche iche si dị, a na-ekewa ha n'ụdị n-ụdị na p-ụdị epitaxial wafers. Ụlọ Hantian Tiancheng na Dongguan Tianyu enweelarị ike ịnye inch 4-inch/6-inch SiC epitaxial wafers. Maka SiC epitaxy, ọ na-esiri ike ịchịkwa n'ọhịa voltaji dị elu, na àgwà SiC epitaxy nwere mmetụta dị ukwuu na ngwaọrụ SiC. Ọzọkwa, ụlọ ọrụ anọ na-eduga na ụlọ ọrụ na-achịkwa akụrụngwa epitaxial: Axitron, LPE, TEL na Nuflare.
Silicon carbide epitaxialwafer na-ezo aka na silicon carbide wafer nke otu ihe nkiri kristal (epitaxial oyi akwa) nwere ụfọdụ ihe achọrọ yana otu kristal mkpụrụ na-etolite na mkpụrụ osisi silicon carbide mbụ. Uto Epitaxial na-ejikarị CVD (Chemical Vapor Deposition,) akụrụngwa ma ọ bụ MBE (Molecular Beam Epitaxy) akụrụngwa. Ebe ọ bụ na a na-arụpụta ngwaọrụ silicon carbide ozugbo na oyi akwa epitaxial, ogo nke epitaxial oyi akwa na-emetụta arụmọrụ na mkpụrụ nke ngwaọrụ ahụ ozugbo. Ka voltaji na-eguzogide arụmọrụ nke ngwaọrụ ahụ na-aga n'ihu na-abawanye, ọkpụkpụ nke oyi akwa epitaxial kwekọrọ na ya na-esiwanye ike ma na-achịkwa ya na-esiwanye ike. N'ozuzu, mgbe voltaji dị gburugburu 600V, ihe dị mkpa nke epitaxial oyi akwa dị ihe dị ka 6 microns; mgbe voltaji dị n'etiti 1200-1700V, a chọrọ epitaxial oyi akwa ọkpụrụkpụ ruru 10-15 microns. Ọ bụrụ na voltaji ahụ ruru ihe karịrị 10,000 volts, enwere ike ịchọrọ ọkpụrụkpụ epitaxial oyi akwa karịa 100 microns. Ka ọkpụrụkpụ nke oyi akwa epitaxial na-aga n'ihu na-abawanye, ọ na-esiwanye ike ijikwa oke na resistivity uniformity na njupụta ntụpọ.
Ngwa SiC: Mba ụwa, 600 ~ 1700V SiC SBD na MOSFET emeberela ụlọ ọrụ. Ngwaahịa ndị a na-ahụkarị na-arụ ọrụ na ọkwa voltaji n'okpuru 1200V ma bụrụkwa nke mbụ iji nkwakọ ngwaahịa. N'ihe gbasara ọnụahịa, ngwaahịa SiC na ahịa mba ụwa na-ere ihe dị ka ugboro 5-6 karịa ndị otu Si. Agbanyeghị, ọnụ ahịa na-agbada na ọnụego kwa afọ nke 10%. na mgbasawanye nke ihe ndị dị n'elu na mmepụta ngwaọrụ n'ime afọ 2-3 na-esote, ahịa ahịa ga-abawanye, na-eduga n'ịbelata ọnụahịa ọzọ. A na-atụ anya na mgbe ọnụahịa ahụ ruru ugboro 2-3 karịa nke ngwaahịa Si, uru ndị a na-eweta site na mbelata ụgwọ sistemụ na arụmọrụ ka mma ga-eji nwayọọ nwayọọ mee ka SiC weghara ohere ahịa nke ngwaọrụ Si.
Nkwakọ ngwaahịa ọdịnala dabere na ihe ndị dabere na silicon, ebe ihe semiconductor ọgbọ nke atọ chọrọ imewe ọhụrụ kpamkpam. Iji usoro nkwakọ ngwaahịa silicon omenala maka ngwaọrụ ike bandgap nwere ike iwebata okwu ọhụrụ na ihe ịma aka metụtara ugboro ole, njikwa ọkụ na ntụkwasị obi. Ngwa ike SiC na-enwe mmetụta karịa maka ike parasitic na inductance. N'iji ya tụnyere ngwaọrụ Si, ibe ike SiC nwere ọsọ ọsọ na-agbanwe ngwa ngwa, nke nwere ike iduga overshoot, oscillation, mmụba ngbanwe mgbanwe, na ọbụnadị ngwaọrụ adịghị arụ ọrụ. Na mgbakwunye, ngwaọrụ ike SiC na-arụ ọrụ na okpomọkụ dị elu, na-achọ usoro njikwa okpomọkụ dị elu karịa.
Ewupụtala ụdị dị iche iche dị iche iche n'ọhịa nke ngwugwu ike semiconductor wide-bandgap. Nkwakọ modul ikike Si dabere adabaghịzi. Iji dozie nsogbu nke parasitic parasitic parasitic parasitic parasitic na-adịghị mma okpomọkụ dissipation arụmọrụ nke omenala Si-based ike modul nkwakọ ngwaahịa, SiC ike modul nkwakọ nakweere ikuku interconnection na abụọ n'akụkụ jụrụ technology na ya Ọdịdị, na-na-anabata ihe substrate na mma thermal. conductivity, ma gbalịa ijikọta ndị na-emepụta ihe, okpomọkụ / ihe mmetụta dị ugbu a, na mbanye sekit n'ime usoro modul, wee mepụta teknụzụ nkwakọ ngwaahịa dị iche iche. Ọzọkwa, enwere ihe mgbochi teknụzụ dị elu maka nrụpụta ngwaọrụ SiC na ọnụ ahịa nrụpụta dị elu.
A na-emepụta ngwaọrụ silicon carbide site na idobe akwa epitaxial na mkpụrụ silicon carbide site na CVD. Usoro a gụnyere ihicha, oxidation, photolithography, etching, ịdọpụ nke photoresist, ion implantation, chemical vapor deposition nke silicon nitride, polishing, sputtering, na ndị na-esote nhazi usoro iji mepụta ngwaọrụ na SiC otu mkpụrụ kristal. Ụdị isi ngwaọrụ ike SiC gụnyere SiC diodes, SiC transistor, na modul ike SiC. N'ihi ihe ndị dị ka ngwa ngwa mmepụta ihe ngwa ngwa na ọnụego mkpụrụ dị ala, ngwaọrụ silicon carbide nwere ọnụ ahịa nrụpụta dị elu.
Na mgbakwunye, imepụta ngwaọrụ silicon carbide nwere ụfọdụ ihe isi ike teknụzụ:
1) Ọ dị mkpa ịmepụta usoro a kapịrị ọnụ nke kwekọrọ na njirimara nke silicon carbide ihe. Dịka ọmụmaatụ: SiC nwere ebe mgbaze dị elu, nke na-eme ka mgbasa ọkụ ọdịnala ghara ịdị irè. Ọ dị mkpa iji usoro doping ntinye ion na-achịkwa nke ọma dịka okpomọkụ, ọnụego ọkụ, ogologo oge na ikuku gas; SiC adịghị etinye aka na ihe mgbaze kemịkal. Ekwesịrị iji ụzọ dị ka etching akọrọ, na ihe nkpuchi, ngwakọta gas, njikwa nke mkpọda akụkụ akụkụ, ọnụego etching, nhụsianya dị n'akụkụ, wdg kwesịrị ịkwalite ma mepụta;
2) Imepụta electrodes metal na silicon carbide wafers chọrọ nguzogide kọntaktị n'okpuru 10-5Ω2. Ihe electrode na-ezute ihe ndị a chọrọ, Ni na Al, nwere nkwụsi ike okpomọkụ na-adịghị mma karịa 100 Celsius, mana Al / Ni nwere nkwụsi ike okpomọkụ ka mma. Nkwụsị kọntaktị kpọmkwem nke / W / Au ihe mejupụtara electrode bụ 10-3Ω2 dị elu;
3) SiC nwere akwa ịkpụ akwa, na ike siri ike nke SiC bụ nke abụọ na diamond, nke na-ebute ihe ndị dị elu chọrọ maka ịkpụ, egweri, polishing na teknụzụ ndị ọzọ.
Ọzọkwa, trenchi silicon carbide ngwaọrụ ike n'ichepụta. Dị ka usoro ngwaọrụ dị iche iche si dị, ngwaọrụ ike silicon carbide nwere ike kewaa n'ime ngwaọrụ atụmatụ na ngwaọrụ trenchi. Planar silicon carbide ike ngwaọrụ nwere ezigbo otu nkeji na usoro nrụpụta dị mfe, mana ọ na-enwekarị mmetụta JFET ma nwee ikike parasitic dị elu na nguzogide steeti. E jiri ya tụnyere ngwaọrụ planar, trenchi silicon carbide power devices nwere nrụgide nkeji dị ala ma nwee usoro nrụpụta siri ike karị. Otú ọ dị, usoro nhazi nke trenchi na-enyere aka ịbawanye njupụta nke ngwaọrụ ahụ ma ọ bụ obere ka ọ na-emepụta mmetụta JFET, nke bara uru iji dozie nsogbu nke ọwa ọwa. Ọ nwere ihe ndị magburu onwe ya dị ka obere na-eguzogide, obere ikike parasitic, yana oriri ike na-agbanwe obere. Ọ nwere uru dị oke ọnụ na uru arụmọrụ wee bụrụ ntụzịaka nke mmepe nke ngwaọrụ ike carbide silicon. Dabere na webụsaịtị gọọmentị Rohm, usoro ROHM Gen3 (usoro Gen1 Trench) bụ naanị 75% nke mpaghara mgbawa Gen2 (Plannar2), yana nguzogide ROHM Gen3 na-ebelata site na 50% n'okpuru otu mgbawa.
Mkpụrụ silicon carbide, epitaxy, n'ihu-njedebe, mmefu R&D na ndị ọzọ na-akpata 47%, 23%, 19%, 6% na 5% nke ọnụahịa nrụpụta nke ngwaọrụ silicon carbide n'otu n'otu.
N'ikpeazụ, anyị ga-elekwasị anya n'ịkwatu ihe mgbochi teknụzụ nke mkpụrụ n'ime agbụ ụlọ ọrụ silicon carbide.
Usoro mmepụta nke silicon carbide substrates yiri nke ihe ndị dabeere na silicon, ma ọ ka sie ike karị.
Usoro mmepụta nke mkpụrụ osisi silicon carbide n'ozuzu na-agụnye njikọ akụrụngwa, uto kristal, nhazi ingot, ịkpụ ingot, ichicha wafer, polishing, ihicha na njikọ ndị ọzọ.
Ogbo uto kristal bụ isi nke usoro ahụ dum, usoro a na-ekpebi njirimara eletriki nke mkpụrụ osisi silicon carbide.
Ihe siliki carbide siri ike itolite na mmiri mmiri n'okpuru ọnọdụ nkịtị. Usoro uto nke vapor a ma ama n'ahịa taa nwere okpomoku na-eto karịa 2300 Celsius ma na-achọ njikwa ziri ezi nke okpomọkụ uto. Usoro ọrụ niile fọrọ nke nta ka ọ sie ike ịhụ. Obere mperi ga-eduga na mkpochapu ngwaahịa. N'iji ya tụnyere, silicon ihe naanị chọrọ 1600 ℃, nke bụ nnọọ ala. Ịkwadebe ihe ndị mejupụtara silicon carbide na-echekwa ihe isi ike ihu dị ka uto kristal dị nwayọ na ụdị kristal dị elu chọrọ. Silicon carbide wafer uto na-ewe ihe dị ka ụbọchị 7 ruo 10, ebe mkpanaka silicon na-adọta naanị ụbọchị 2 na ọkara. Ọzọkwa, silicon carbide bụ ihe ike ya bụ nke abụọ naanị na diamond. Ọ ga-efunahụ nke ukwuu n'oge ịkpụ, egweri, na polishing, na mmepụta ruru bụ nanị 60%.
Anyị maara na ihe na-emekarị bụ ịbawanye nha nke silicon carbide substrates, ka nha na-aga n'ihu na-abawanye, ihe ndị a chọrọ maka teknụzụ mgbasawanye dayameta na-adị elu na elu. Ọ na-achọ ngwakọta nke ihe njikwa ọrụ nka dị iche iche iji nweta uto iterative nke kristal.
Oge nzipu: Mee-22-2024